All The Claims

1. A composite material comprising:
from about 1% to about 99% variable-conductivity material;
from about 99% to about 1% conductive material;
wherein the conductive material and variable-conductivity material comprise nanometer-scale particles having an average lineal dimension that ranges from about one nanometer to about one micron; and
wherein the composite material exhibits memristive properties when a voltage differential is applied to the composite material.
2. The composite material of claim 1, wherein the conductive material is a metal or a semiconductor material.
3. The composite material of claim 1, wherein the conductive material is a doped semiconductor.
4. The composite material of claim 1, wherein the variable-conductivity material is a solid ionic conductor material.
5. The composite material of claim 1, wherein the variable-conductivity material is a metal oxide.
6. The composite material of claim 1, wherein the composite material comprises, by volume, from about 10% to about 90% variable-conductivity material and from about 90% to about 10% conductive material.
7. The composite material of claim 1, wherein the volumetric ratio of the variable-conductivity material to the conductive material ranges from about 35%:65% to about 70%:30%.
8. The composite material of claim 1, wherein the conductive material is selected from the group of: gold, silver, silicon, germanium, gallium arsenide, and mixtures thereof.
9. The composite material of claim 1, wherein the variable-conductivity material is a metal oxide selected from the group of nickel oxide, zinc oxide, titanium dioxide, hafnium oxide, silicon oxide, vanadium oxide and mixtures thereof.
10. The composite material of claim 1, wherein the variable-conductivity material is a solid ionic conductor material selected from the group of: silver iodide, copper iodide, lanthanum fluoride, silver fluoride, and combinations thereof.
11. The composite material of claim 1, wherein the composite material comprise, by volume, from about 35% to about 65% silicon and from about 65% to about 35% nickel oxide.
12. The composite material of claim 1, wherein the variable-conductivity material is nickel-oxide and the conductive material is silicon.
13. The composite material of claim 12, wherein the volume ratio of nickel-oxide to silicon ranges from about 1%:99% to about 99%:1%.
14. The composite material of claim 12, wherein the volume ratio of nickel-oxide to silicon ranges from about 35%:65% to about 75%:25%.
15. The composite material of claim 1, wherein the composite material has a minimum resistance that ranges from about 1 k\u03a9 to about 5 G\u03a9 when a voltage differential that ranges from zero to 10 Volts is applied to the composite material.
16. A variable resistor device comprising:
a composite material comprising a nanometer-scale conductive material and nanometer-scale variable-conductive material;
a first electrode connected to the composite material and a second electrode connected to the composite material; and
wherein the electronic device exhibits memristive properties in response to voltage applied across the first electrode and the second electrode.
17. The variable resistor device of claim 16, wherein the nanometer-scale conductive material and the nanometer-scale variable-conductive material comprise particles having an average diameter that ranges from about one nanometer to about one micron.
18. The variable resistor device of claim 16, wherein the variable-conductivity material of the composite comprises metal oxide.
19. The variable resistor device of claim 16, wherein the conductive material of the composite comprises semiconductor material.
20. The composite material of claim 16, wherein the variable-conductivity material of the composite comprises a solid ionic conductor material.
21. The variable resistor device of claim 16, wherein the volumetric ratio of the variable-conductivity material to the conductive material ranges from about 1%:99% to about 99%:1%.
22. The variable resistor device of claim 16, wherein the volumetric ratio of the variable-conductivity material to the conductive material ranges from about 35%:65% to about 75%:25%.
23. The variable resistor device of claim 16, wherein the conductive material is selected from the group of: gold, silver, silicon, germanium, gallium arsenide, and mixtures thereof.
24. The variable resistor device of claim 18, wherein the metal oxide material is selected from the group of: nickel oxide, zinc oxide, titanium dioxide, hafnium oxide, silicon oxide, vanadium oxide and mixtures thereof.
25. The variable resistor device of claim 16, wherein the composite material comprises, by volume, from about 25% to about 75% nickel-oxide and from about 75% to about 25% silicon.
26. The variable resistor device of claim 16, wherein the composite material is a film structure.
27. The variable resistor device of claim 26, wherein the conductive material is present in the film as a host material having defined pores, and the variable-conductivity material is present as an intercalating material disposed within the pores.
28. A method for making an electrical component comprising:
hybridizing a nanometer-scale conductive material with a nanometer-scale variable-conductivity material to form a composite material comprising, by volume, from about 1% to about 99% variable-conductivity material and from about 99% to about 1% conductive material.
29. The method of claim 28, wherein the ratio, by volume, of variable-conductivity material to conductive material ranges from about 25%:75% to about 75%:25%.
30. The method of claim 28, wherein hybridizing comprises:
forming the conductive material into a film structure having pores therein; and
filling the pores of the film structure with particles of the variable-conductive material via at least one of the following techniques: sol-gel deposition, thermal deposition, and electron beam deposition.
31. The method of claim 28, further comprising:
fabricating the first electrode and a second electrode on the composite via photolithography; and
wherein the first electrode and the second electrode comprise a material selected from the group of: gold, silver, platinum, nickel, aluminum and mixtures thereof.
32. The method of claim 28, wherein:
the conductive material is selected from the group of: gold, silver, silicon, germanium, gallium, arsenide, and mixtures thereof; and
the variable-conductivity material is selected from the group of: nickel oxide, zinc oxide, titanium dioxide, hafnium oxide, silicon oxide, vanadium oxide, silver iodide, copper iodide, lanthanum fluoride, silver fluoride and mixtures thereof.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A phase difference film, comprising:
a layer formed of a resin composition (A) containing a polystyrene-based polymer having a syndiotactic structure and polyarylene ether,
wherein:
a ratio of the polystyrene-based polymer having the syndiotactic structure with respect to the polyarylene ether in the resin composition (A) is 65:35 to 55:45, the ratio being a weight ratio of (the polystyrene-based polymer having the syndiotactic structure) with respect to (the polyarylene ether),
the phase difference film satisfies a relation Re450<Re550<Re650, and
Re450, Re550, and Re650 are in-plane direction retardations of the phase difference film at measurement wavelengths of 450 nm, 550 nm, and 650 nm, respectively.
2. The phase difference film according to claim 1, wherein Re450Re550 in the phase difference film is 0.80 or more and 0.90 or less.
3. The phase difference film according to claim 1, wherein a birefringence \u0394n (\u0394n=nx\u2212ny) of the phase difference film at a wavelength of 550 nm is 0.0020 or more and 0.0050 or less.
4. The phase difference film according to claim 1, having a thickness of 80 \u03bcm or less.
5. The phase difference film according to claim 1, wherein the polyarylene ether contains a polymer including a phenylene ether unit.
6. The phase difference film according to claim 1, wherein the in-plane direction retardation Re550 of the phase difference film at a measurement wavelength of 550 nm is 110 nm to 150 nm.
7. The phase difference film according to claim 1, wherein the phase difference film is prepared by subjecting a long-length pre-stretch film formed of the resin composition (A) to stretching in a direction within a range of 40\xb0 or more and 50\xb0 or less with respect to a lengthwise direction of the long-length pre-stretch film.
8. The phase difference film according to claim 7, wherein the stretching is performed at a temperature equal to or higher than (Tg\u221215)\xb0 C. and equal to or lower than (Tg+1)\xb0 C., wherein (Tg) is the glass transition temperature of the resin composition (A).
9. The phase difference film according to claim 1, wherein the phase difference film is prepared by subjecting a long-length pre-stretch film layered body to stretching in a direction within a range of 40\xb0 or more and 50\xb0 or less with respect to a lengthwise direction of the long-length pre-stretch film layered body, the pre-stretch film layered body including a P1 layer formed of the resin composition (A) and a P2 layer provided in contact with the P1 layer and formed of a thermoplastic resin (B).
10. The phase difference film according to claim 9 wherein the thermoplastic resin (B) is at least one selected from acrylic resins, resins containing alicyclic structure-containing polymers, and polycarbonate resins.
11. The phase difference film according to claim 10, wherein the long-length pre-stretch film layered body is obtained by co-extrusion or co-flow casting of the resin composition (A) and the thermoplastic resin (B).
12. The phase difference film according to claim 9, wherein the long-length pre-stretch film layered body is obtained by co-extrusion or co-flow casting of the resin composition (A) and the thermoplastic resin (B).
13. The phase difference film according to claim 9, wherein the stretching is performed at a temperature equal to or higher than (Tg\u221215)\xb0 C. and equal to or lower than (Tg+1)\xb0 C., wherein (Tg) is the glass transition temperature of the resin composition (A).
14. The phase difference film according to claim 1, wherein the phase difference film is prepared by: subjecting a long-length pre-stretch film layered body to stretching in a direction within a range of 40\xb0 or more and 50\xb0 or less with respect to a lengthwise direction of the long-length pre-stretch film layered body, the pre-stretch film layered body including a P1 layer formed of the resin composition (A) and a P2 layer provided in contact with the P1 layer and formed of a thermoplastic resin (B), whereby a phase difference film layered body including a p1 layer formed by stretching the P1 layer and a p2 layer formed by stretching the P2 layer is obtained; and then removing the p2 layer.
15. The phase difference film according to claim 14, wherein the thermoplastic resin (B) is at least one selected from acrylic resins, resins containing alicyclic structure-containing polymers, and polycarbonate resins.
16. The phase difference film according to claim 14, wherein the long-length pre-stretch film layered body is obtained by co-extrusion or co-flow casting of the resin composition (A) and the thermoplastic resin (B).
17. The phase difference film according to claim 14, wherein the stretching is performed at a temperature equal to or higher than (Tg\u221215)\xb0 C. and equal to or lower than (Tg+1)\xb0 C., wherein (Tg) is the glass transition temperature of the resin composition (A).
18. The phase difference film according to claim 1, wherein:
an Nz coefficient of the phase difference film at a wavelength of 550 nm is \u22120.25 to \u22120.05,
the Nz coefficient represents (nx\u2212nz)(nx\u2212ny),
nx represents a refractive index in a direction of an in-plane slow axis of the phase difference film,
ny represents a refractive index in a direction of an in-plane fast axis of the phase difference film, and
nz represents a refractive index in a thickness direction of the phase difference film.

1. A method for treating a keratoconjunctival disorder comprising administering to a patient in need thereof a therapeutically effective amount of a compound selected from the group consisting of
(i) 5- 4- 3-methyl-4-oxo-3,4-dihydro-2-quinazolinylmethoxyphenylmethylthiazolidine-2,4-dione or a pharmaceutically acceptable salt thereof, and
(ii) N-(4-methoxyphenoxy)carbonyl-N-4-2-(5-methyl-2-phenyl-4-oxazolyl) ethoxyphenylmethylglycine or a pharmaceutically acceptable salt thereof.
2. The method according to claim 1, wherein the keratoconjunctival disorder is dry eyes, corneal ulcer, keratitis, conjunctivitis, superficial punctate keratopathy, corneal epithelial defects, conjunctive epithelial defects, keratoconjunctivitis sicca, superior limbic keratoconjunctivitis or filamentary keratitis.
3. The method according to claim 1, wherein the administration is instillation of an eye drop or administration of an ophthalmic ointment.
4. The method according to claim 1, wherein the compound is 5-4-3-methyl-4-oxo-3,4-dihydro-2-quinazolinylmethoxy phenylmethylthiazolidine-2, 4-dione or a pharmaceutically acceptable salt thereof.
5. The method according to claim 1, wherein the compound is N-(4-methoxyphenoxy) carbonyl-N-4-2-(5-methyl 2-phenyl-4-oxazolyl)ethoxylphenylmethylglycine or a pharmaceutically acceptable salt thereof.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A controller configured to control a device comprising a servo axis based on a time chart, comprising:
a time chart execution unit configured to output a control signal serving as a signal for controlling an operation of the device based on a description for controlling the operation of the device included in the time chart;
an internal time counter configured to count an internal time corresponding to a time on a time axis of the time chart; and
an internal time stopper configured to stop, for at least one device as the device, the counting of the internal time conducted by the internal time counter until an operation of the at least one device is finished when the operation of the at least one device has not been finished after a scheduled finish time point of the operation of the at least one device on the time chart.
2. The controller according to claim 1, wherein the internal time stopper stops the counting conductedby the internal time counter when the device comprises a plurality of the devices and when an operation of any one of the plurality of the devices has not been finished.
3. The controller according to claim 1, further comprising a servo axis scheduled finish time point calculation unit configured to calculate a servo axis operation scheduled finish time point serving as a scheduled finish time point of an operation of the servo axis based on the description for controlling the operation of the servo axis included in the time chart.
4. The controller according to claim 1, further comprising an internal time halting unit configured to stop the counting of the internal time conducted by the internal time counter in accordance with a halt instruction set on the time chart, and restart the counting of the internal time conducted by the internal time counter in accordance with a halt cancellation signal.
5. The controller according to claim 4, wherein the internal time halting unit stops operations of all the servo axes in accordance with the halt instruction.
6. A time chart creation apparatus to be connected to the controller of claim 1, comprising at least one of:
a servo axis operation scheduled finish time point calculation unit configured to calculate a servo axis operation scheduled finish time point serving as a scheduled finish time point of an operation of the servo axis included in the time chart; and
a servo axis operation scheduled finish time point designation unit configured to designate the servo axis operation scheduled finish time point.
7. A time chart creation apparatus to be connected to the controller of claim 4, comprising a halt instruction setting unit configured to set the halt instruction on the time chart.
8. A time chart creation apparatus to be connected to the controller of claim 1, comprising a servo axis operation adding unit configured to conduct one operation at an arbitrary position in a time axis within a chart for describing an operation of the servo axis, to thereby add a description for controlling the operation of the servo axis using a waveform defined in advance to the time chart.
9. A tangible computer-readable information storage medium having a computer program stored thereon, the computer program for causing a computer to function as the time chart creation apparatus of claim 6.
10. A controlling method to control a device comprising a servo axis based on a time chart, comprising:
outputting a control signal serving as a signal for controlling an operation of the device based on a description for controlling the operation of the device included in the time chart;
counting an internal time corresponding to a time on a time axis of the time chart; and
stopping, for at least one device as the device, the counting of the internal time until an operation of the at least one device is finished when the operation of the at least one device has not been finished after a scheduled finish time point of the operation of the at least one device on the time chart.
11. A controller configured to control a device comprising a servo axis based on a time chart, comprising:
a means for outputting a control signal serving as a signal for controlling an operation of the device based on a description for controlling the operation of the device included in the time chart;
a means for counting an internal time corresponding to a time on a time axis of the time chart; and
a means for stopping, for at least one device as the device, the counting of the internal time until an operation of the at least one device is finished when the operation of the at least one device has not been finished after a scheduled finish time point of the operation of the at least one device on the time chart.