1. A solid state imaging apparatus comprising:
a photoelectric conversion section formed in an imaging area of a silicon substrate, the photoelectric conversion section including:
a surface layer having a first conductivity type provided on a top portion of the silicon substrate,
a first semiconductor layer made of silicon having a second conductivity type, serving as a charge accumulation region, and provided under the surface layer, and
a second semiconductor layer made of silicon having the first conductivity type provided under the first semiconductor layer;
an isolation region formed in at least one part of the silicon substrate located around the photoelectric conversion section, the isolation region being made of a silicon film which fills an isolation trench formed on the semiconductor substrate;
a first silicon layer made of silicon having the first conductivity type formed in a region of the silicon substrate, and forming the bottom and sidewalls of the isolation trench; and
a second silicon layer made of silicon having the first conductivity type in contact with a bottom side of the first silicon layer, wherein an impurity concentration of the second silicon layer is less than that of the first silicon layer,
wherein the photoelectric conversion section is in contact with the isolation region, the first silicon layer, and the second silicon layer, and
the second silicon layer is in physical contact with a side surface of the first semiconductor layer.
2. The solid state imaging apparatus of claim 1, further comprising an insulating film covering the bottom and sidewalls of the isolation trench.
3. The solid state imaging apparatus of claim l, further comprising a MOS transistor formed in the imaging area,
wherein the silicon film contains an impurity of the opposite conductivity type to source and drain regions of the MOS transistor.
4. The solid state imaging apparatus of claim 1, wherein the silicon film is made of amorphous silicon, polycrystalline silicon or porous silicon.
5. The solid state imaging apparatus of claim 1, wherein a depth of the first semiconductor layer is substantially the same as that of the second silicon layer.
6. The solid state imaging apparatus of claim 1, wherein the isolation region is grounded.
7. The solid state imaging apparatus of claim 1 wherein the isolation region is biased.
8. A camera comprising the solid state imaging apparatus according to claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of culturing embryonic stem (ES) cells of avian, comprising the steps of:
a) suspending ES cells originating from the blastoderm disk of fertilized un-incubated avian egg(s) in a basal culture medium supplemented with:
insulin-like growth factor-1 (IGF-1) and ciliary neurotrophic factor (CNTF); and
animal serum; and
optionally, at least one growth factors selected in the group comprising interleukin 6 (Il-6), interleukin 6 receptor (Il-6R), stem cell factor (SCF), fibroblast growth factor (FGF), leukaemia inhibitory factor (LIF), interleukin 11 (Il-11), oncostatin and cardiotrophin;
b) seeding the suspension of ES cells obtained in step a) on a layer of feeder cells and further culturing the ES cells for at least between 2 to 10 passages;
c) optionally removing at least one growth factors selected SCF, FGF, Il-6, Il-6R, LIF, oncostatin and cardiotrophin and Il-11 from the culture medium;
d) further culturing the ES cells in the medium of step c) on a layer of feeder cells.
2. The method of culturing embryonic stem (ES) cells of avian according to claim 1, comprising the steps of:
a) suspending ES cells originating from the blastoderm disk of fertilized un-incubated avian egg(s) in a basal culture medium supplemented with insulin-like growth factor-1 (IGF-1), ciliary neurotrophic factor (CNTF), interleukin 6 (Il-6), interleukin 6 receptor (Il-6R), stem cell factor (SCF) and fibroblast growth factor (FGF) and animal serum;
b) seeding the suspension of ES cells obtained in step a) on a layer of feeder cells and further culturing the ES cells for at least between 2 to 10 passages;
c) optionally removing at least one growth factor selected from the group comprising SCF, FGF, Il-6 and Il-6R from the culture medium;
d) further culturing the ES cells in the medium of step c) on a layer of feeder cells.
3. The method of culturing embryonic stem (ES) cells of avian according to claim 1, comprising the steps of:
a) suspending ES cells originating from the blastoderm disk of fertilized un-incubated avian egg(s) in a basal culture medium supplemented with insulin-like growth factor-1 (IGF-1), ciliary neurotrophic factor (CNTF), interleukin 6 (Il-6), interleukin 6 receptor (Il-6R), stem cell factor (SCF), fibroblast growth factor (FGF) and animal serum;
b) seeding the suspension of ES cells obtained in step a) on a layer of feeder cells and further culturing the ES cells for at least between 2 to 10 passages;
c) optionally removing at least one growth factor selected from the group comprising SCF and FGF from the culture medium;
d) further culturing the ES cells in the medium of step c) on a layer of feeder cells.
4. The method according to claim 1 wherein the avian is a chicken.
5. The method according to claim 1 wherein the avian is a duck.
6-33. (canceled)
34. A culture medium for avian embryonic stem cells comprising at least insulin-like growth factor-1 (IGF-1), ciliary neurotrophic factor (CNTF) and optionally at least one compound selected in the group comprising interleukin 6 (Il-6), interleukin 6 receptor (Il-6R), stem cell factor (SCF), fibroblast growth factor (FGF) wherein said medium is sufficient for the maintenance of said avian embryonic stem cells into culture for at least 7 days, preferably for at least 100 days.
35. The culture medium of claim 34 further comprising a layer of feeder cells.
36-39. (canceled)