All The Claims

1. A desktop working apparatus for performing desired operations on a workpiece while the workpiece and a working head are relatively moved, the desktop working apparatus comprising:
a base body;
a working section disposed on the base body and including the working head and a working head driving mechanism;
a loader integrally disposed at a side of the desktop working apparatus;
an unloader integrally disposed at a side of the desktop working apparatus;
a conveying section disposed on the base body and conveying the workpiece supplied from the loader to the unloader; and
a control unit,
wherein the conveying section includes a fixing mechanism for fixedly holding the workpiece at a working position,
the working section includes the working head disposed above the working position, and
the control unit includes a first control unit disposed within the base body, and a second control unit disposed at a side or a top of the desktop working apparatus,
wherein the conveying section includes a conveying rail disposed on the base body and conveying the workpiece, and an application stage arranged at the working position, and
the fixing mechanism comprises a fixing member to fixedly sandwich the workpiece at the working position.
2. The desktop working apparatus according to claim 1, wherein the working head driving mechanism includes an X-axis driving mechanism for moving the working head parallel to a conveying direction of the conveying section, a Y-axis driving mechanism for moving the working head in a direction perpendicular to the conveying direction of the conveying section, and a Z-axis driving mechanism for moving the working head in an up and down direction, the Y-axis driving mechanism being disposed in overhanging relation to the conveying section.
3. The desktop working apparatus according to claim 1, further comprising a casing that is disposed on the base body and that covers the working section and the conveying section.
4. The desktop working apparatus according to claim 3, wherein the second control unit is disposed at a side or a top of the casing.
5. The desktop working apparatus according to claim 1, wherein the first control unit is a control unit for controlling the working head driving mechanism and the conveying section, and the second control unit is a control unit for controlling the working head, or wherein the first control unit is a control unit for controlling the working head, and the second control unit is a control unit for controlling the working head driving mechanism and the conveying section.
6. The desktop working apparatus according to claim 1, wherein the loader includes a magazine charging portion that is positioned 80 cm or less above a desk.
7. The desktop working apparatus according to claim 1, wherein the loader includes a magazine charging portion that is positioned 60 cm or less above a desk.
8. The desktop working apparatus according to claim 1, wherein a height of the conveying section is set such that an upper surface of the workpiece placed on the conveying section is positioned 80 cm or less above a desk.
9. The desktop working apparatus according to claim 1, wherein a height of the conveying section is set such that an upper surface of the workpiece placed on the conveying section is positioned 60 cm or less above a desk.
10. The desktop working apparatus according to claim 1, wherein a height of the base body is \xbd or less of a height of the desktop working apparatus.
11. The desktop working apparatus according to claim 1 wherein a height of the base body is \xbc to \u2159 of a height of the desktop working apparatus.
12. The desktop working apparatus according to claim 1, wherein the working section includes the working head, a distance measurement device, and an image pickup device, which are integrally disposed in series parallel to the conveying direction of the conveying section.
13. The desktop working apparatus according to claim 1, wherein the working head is an ejection head.
14. A desktop working apparatus for performing desired operations on a workpiece while the workpiece and a working head are relatively moved, the desktop working apparatus comprising:
a base body;
a working section disposed on the base body and including the working head and a working head driving mechanism;
a loader integrally disposed at a side of the desktop working apparatus;
an unloader integrally disposed at a side of the desktop working apparatus;
a conveying section disposed on the base body and conveying the workpiece supplied from the loader to the unloader; and
a plurality of control units arranged in a distributed way,
wherein the conveying section includes a fixing mechanism for fixedly holding the workpiece at a working position,
the working section includes the working head disposed above the working position, and
a height of the conveying section is set such that an upper surface of the workpiece placed on the conveying section is positioned 80 cm or less above a desk,
wherein the conveying section includes a conveying rail disposed on the base body and conveying the workpiece, and an application stage arranged at the working position, and
the fixing mechanism comprises a fixing member to fixedly sandwich the workpiece at the working position.
15. The desktop working apparatus according to claim 14, wherein the height of the conveying section is set such that the upper surface of the workpiece placed on the conveying section is positioned 60 cm or less above the desk.
16. The desktop working apparatus according to claim 14, wherein at least one of the distributed control units is disposed within the base body.
17. The desktop working apparatus according to claim 14, wherein a height of the base body is \xbd or less of a height of the desktop working apparatus.
18. The desktop working apparatus according to claim 14, wherein a height of the base body is \xbc to \u2159 of a height of the desktop working apparatus.
19. The desktop working apparatus according to claim 14, wherein the working section includes the working head, a distance measurement device, and an image pickup device, which are integrally disposed in series parallel to the conveying direction of the conveying section.
20. The desktop working apparatus according to claim 14, wherein the working head is an ejection head.
21. A desktop working apparatus for performing desired operations on a workpiece while the workpiece and a working head are relatively moved, the desktop working apparatus comprising:
a base body;
a working section disposed on the base body and including the working head and a working head driving mechanism;
a loader integrally disposed at a side of the desktop working apparatus;
an unloader integrally disposed at a side of the desktop working apparatus;
a conveying section disposed on the base body and conveying the workpiece supplied from the loader to the unloader; and
a control unit,
wherein the conveying section includes a fixing mechanism for fixedly holding the workpiece at a working position,
the working section includes the working head disposed above the working position, and
the control unit includes a first control unit disposed within the base body, and a second control unit disposed at a side or a top of the desktop working apparatus,
wherein the loader moves a plurality of first vertically stacked magazine tables up and down while always holding constant a relative distance between adjacent magazine tables in the first vertically stacked magazine tables, and supplies the workpiece contained in a magazine to the conveying section, the magazine being placed on the magazine table, and
wherein the unloader moves a plurality of second vertically stacked magazine tables up and down while always holding constant a relative distance between adjacent magazine tables in the second vertically stacked magazine tables, and takes in the workpiece discharged from the conveying section into a magazine that is placed on the magazine table.
22. The desktop working apparatus according to claim 21, wherein a height of the workpiece placed on the conveying section is greater than a length from a lower end of the magazine table to an upper end of the magazine placed on the magazine table.
23. A desktop working apparatus for performing desired operations on a workpiece while the workpiece and a working head are relatively moved, the desktop working apparatus comprising:
a base body;
a working section disposed on the base body and including the working head and a working head driving mechanism;
a loader integrally disposed at a side of the desktop working apparatus;
an unloader integrally disposed at a side of the desktop working apparatus;
a conveying section disposed on the base body and conveying the workpiece supplied from the loader to the unloader; and
a plurality of control units arranged in a distributed way,
wherein the conveying section includes a fixing mechanism for fixedly holding the workpiece at a working position,
the working section includes the working head disposed above the working position, and
a height of the conveying section is set such that an upper surface of the workpiece placed on the conveying section is positioned 80 cm or less above a desk,
wherein the loader moves a plurality of first vertically stacked magazine tables up and down while always holding constant a relative distance between adjacent magazine tables in the first vertically stacked magazine tables, and supplies the workpiece contained in a magazine to the conveying section, the magazine being placed on the magazine table, and
wherein the unloader moves a plurality of second vertically stacked magazine tables up and down while always holding constant a relative distance between adjacent magazine tables in the second vertically stacked magazine tables, and takes in the workpiece discharged from the conveying section into a magazine that is placed on the magazine table.
24. The desktop working apparatus according to claim 23, wherein a height of the workpiece placed on the conveying section is greater than a length from a lower end of the magazine table to an upper end of the magazine placed on the magazine table.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A self-aligned trench DMOS transistor structure, comprising:
a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a lightly-doped epitaxial semiconductor layer being formed on a heavily-doped semiconductor substrate;
a source region being formed in the lightly-doped epitaxial semiconductor layer surrounded by a trench gate region, wherein the source region comprises a base diffusion region of a second conductive type, a self-aligned heavily-doped contact diffusion region of the second conductivity type being formed in a middle surface portion of the base diffusion region through a first self-aligned implantation window, a self-aligned heavily-doped source diffusion ring of the first conductivity type being formed in an outer surface portion of the base diffusion region and on an outer surface portion of the self-aligned heavily-doped contact diffusion region through a second self-aligned implantation window, and a self-aligned source contact window being formed by a semiconductor surface of the self-aligned heavily-doped contact diffusion region surrounded by the self-aligned heavily-doped source diffusion ring and an inner semiconductor surface of the self-aligned heavily-doped source diffusion ring;
the trench gate region being formed in the semiconductor substrate with a shallow trench depth being formed slightly larger than a junction depth of the moderately-doped base diffusion region and within the lightly-doped epitaxial semiconductor layer, wherein the trench gate region further comprises a gate oxide layer being formed over a trenched semiconductor surface, a highly conductive composite gate layer being formed over the gate oxide layer and an etched-back capping oxide layer being formed on the highly conductive composite gate layer; and
a source metal layer being at least formed on the self-aligned source contact window in the source region and on the etched-back capping oxide layer in the trench gate region.
2. The self-aligned trench DMOS transistor structure according to claim 1, wherein the semiconductor substrate is made of single crystalline-silicon.
3. The self-aligned trench DMOS transistor structure according to claim 1, wherein the highly conductive composite gate layer comprises an etched-back heavily-doped polycrystalline-silicon layer being formed over the gate oxide layer and silicided with a refractory metal silicide layer.
4. The self-aligned trench DMOS transistor structure according to claim 1, wherein the highly conductive composite gate layer comprises an etched-back heavily-doped polycrystalline-silicon layer being formed over a portion of the gate oxide layer and an etched-back capping refractory metal-silicide or refractory metal layer being formed on the etched-back heavily-doped polycrystalline-silicon layer between a pair of capping oxide spacers formed over sidewalls of the trench gate region and on side surface portions of the etched-back heavily-doped polycrystalline-silicon layer.
5. The self-aligned trench DMOS transistor structure according to claim 1, wherein the highly conductive composite gate layer comprises a trenched heavily-doped polycrystalline-silicon layer being formed by forming a trench in an etched-back heavily-doped polycrystalline-silicon layer between a pair of capping oxide spacers formed over sidewalls of the trench gate region and on side surface portions of the etched-back heavily-doped polycrystalline-silicon layer and an etched-back capping refractory metal-silicide or refractory metal layer being formed to fill the trench in the trenched heavily-doped polycrystalline-silicon layer and a portion between the pair of capping oxide spacers.
6. The self-aligned trench DMOS transistor structure according to claim 1, wherein the first self-aligned implantation window is formed to be surrounded by a sacrificial dielectric spacer being formed over a sidewall of a protection dielectric layer formed over a sidewall of the trench gate region and on the protection dielectric layer formed on a buffer oxide layer in the source region.
7. The self-aligned trench DMOS transistor structure according to claim 1, wherein the second self-aligned implantation window is formed by removing a sacrificial dielectric spacer being formed between a protection dielectric layer formed over a sidewall of the trench gate region and a self-aligned implantation masking layer surrounded by the sacrificial dielectric spacer.
8. The self-aligned trench DMOS transistor structure according to claim 1, wherein the self-aligned source contact window is formed by the semiconductor surface portion being surrounded by a sidewall dielectric spacer formed over a sidewall of a protection dielectric layer and on a side surface portion of the protection dielectric layer in the source region.
9. The self-aligned trench DMOS transistor structure according to claim 1, wherein the source metal layer comprises a refractory metal-silicide layer being formed over the self-aligned source contact window and a metal layer over a barrier metal layer being at least formed over the refractory metal silicide layer.
10. The self-aligned trench DMOS transistor structure according to claim 7, wherein the self-aligned implantation masking layer is formed by etching back an organic polymer layer or a polycrystalline-silicon layer being formed on the protection dielectric layer surrounded by the sacrificial dielectric spacer.
11. A self-aligned trench DMOS transistor structure, comprising:
a single crystalline-silicon substrate of a first conductivity type, wherein the single crystalline-silicon substrate comprises a lightly-doped epitaxial silicon layer formed on a heavily-doped silicon substrate;
a trench gate region with a shallow trench being formed in the lightly-doped epitaxial silicon layer, wherein the trench gate region further comprises a gate oxide layer being formed over a trenched silicon surface, a highly conductive composite gate layer being formed over the gate oxide layer and an etched-back capping oxide layer being formed on the highly conductive composite gate layer;
a source region being surrounded by the trench gate region, wherein the source region further comprises a base diffusion region of a second conductivity type with a junction depth slightly smaller than a trench depth in the trench gate region, a heavily-doped contact diffusion region of the second conductivity type being formed in a middle surface portion of the base diffusion region through a first self-aligned implantation window surrounded by a sacrificial dielectric spacer, a heavily-doped source diffusion ring of the first conductivity type being formed in a side surface portion of the base diffusion region and on an outer surface portion of the heavily-doped contact diffusion region through a second self-aligned implantation window formed between a protection dielectric layer and a self-aligned implantation masking layer surrounded by the sacrificial dielectric spacer, and a self-aligned source contact window being formed in the source region through a window surrounded by a sidewall dielectric spacer formed over a sidewall of the protection dielectric layer and on a side portion of the protection dielectric layer; and
a source metal layer being at least formed over the self-aligned source contact window.
12. The self-aligned trench DMOS transistor structure according to claim 11, wherein the protection dielectric layer being made of silicon nitride is formed over the etched-back capping oxide layer in the trench gate region and on a buffer oxide layer in the source region.
13. The self-aligned trench DMOS transistor structure according to claim 11, wherein the self-aligned implantation masking layer is formed by using an etched-back organic polymer or polycrystalline-silicon layer.
14. The self-aligned trench DMOS transistor structure according to claim 11, wherein the source metal layer comprises a refractory metal silicide layer being formed over the self-aligned source contact window and a metal layer over a barrier-metal layer being at least formed over the refractory metal silicide layer.
15. A self-aligned trench DMOS transistor structure, comprising:
a single crystalline-silicon substrate of a first conductivity type, wherein the single crystalline-silicon substrate comprises a lightly-doped epitaxial silicon layer being formed on a heavily-doped silicon substrate;
a trench gate region with a shallow trench being formed in the lightly-doped epitaxial silicon layer, wherein the trench gate region further comprises a gate oxide layer being formed over a trenched silicon surface, an etched-back heavily-doped polycrystalline-silicon layer being formed over a portion of the gate oxide layer, a pair of capping oxide spacers being formed over sidewalls of the trench gate region and on side surface portions of the etched-back heavily-doped polycrystalline-silicon layer, an etched-back highly conductive layer being formed to partially fill a gap between the pair of capping oxide spacers, and an etched-back capping oxide layer being formed on the etched-back highly conductive layer between the pair of capping oxide spacers;
a source region being surrounded by the trench gate region, wherein the source region further comprises a base diffusion region of a second conductivity type with a junction depth slightly smaller than a trench depth in the trench gate region, a heavily-doped contact diffusion region of the second conductivity type being formed in a middle surface portion of the base diffusion region through a first self-aligned implantation window surrounded by a sacrificial dielectric spacer, a heavily-doped source diffusion ring of the first conductivity type being formed in a side surface portion of the base diffusion region and on an outer surface portion of the heavily-doped contact diffusion region through a second self-aligned implantation window formed between a protection dielectric layer and a self-aligned implantation masking layer surrounded by the sacrificial dielectric spacer, and a self-aligned source contact window being formed in the source region through a window surrounded by a sidewall dielectric spacer formed over a sidewall of the protection dielectric layer and on a side portion of the protection dielectric layer in the source region; and
a source metal layer being at least formed over the self-aligned source contact window.
16. The self-aligned trench DMOS transistor structure according to claim 15, wherein the etched-back heavily-doped polycrystalline-silicon layer is further etched anisotropically to form a shallow trench between the pair of capping oxide spacers.
17. The self-aligned trench DMOS transistor structure according to claim 15, wherein the sacrificial dielectric spacer is formed over a sidewall of the protection dielectric layer being formed over a sidewall of the trench gate region and on a buffer oxide layer in the source region.
18. The self-aligned trench DMOS transistor structure according to claim 15, wherein the self-aligned implantation masking layer being formed to be surrounded by a sacrificial dielectric spacer is formed by an etched-back organic polymer or polycrystalline-silicon layer.
19. The self-aligned trench DMOS transistor structure according to claim 15, wherein the source metal layer comprises a refractory metal silicide layer being formed over the self-aligned source contact window and an aluminum alloy metal layer on a barrier-metal layer being at least formed over the refractory metal-silicide layer.
20. The self-aligned trench DMOS transistor structure according to claim 15, wherein the sacrificial dielectric spacer being made of silicon dioxide is selectively removed to form the second self-aligned implantation window.

1. A screen sharing apparatus which shares at least part of a display image on a display screen of the screen sharing apparatus by displaying the display image on a display screen of an information processing apparatus different from the screen sharing apparatus, the screen sharing apparatus comprising:
a storage unit adapted to store a setting file which describes a processing method indicating whether to permit sharing of a display image;
a determination unit adapted to determine a processing method regarding sharing of a display image to be processed, by referring to the setting file stored in said storage unit; and
an execution unit adapted to execute processing regarding sharing of the display image to be processed, in accordance with the processing method determined by said determination unit.
2. The apparatus according to claim 1, wherein said determination unit is executed when a newly generated display image is detected.
3. The apparatus according to claim 1, wherein when sharing, with the other information processing apparatus, the display image to be processed in the screen sharing apparatus in accordance with the processing method determined by said determination unit, said execution unit generates a shared image for sharing the display image to be processed, and transmits the shared image to the other information processing apparatus.
4. The apparatus according to claim 1, wherein said execution unit displays an inquiry screen to inquire whether to share the display image to be processed, in accordance with the processing method determined by said determination unit.
5. The apparatus according to claim 1, wherein
the display image includes a window displayed on the display screen, and
the setting file includes at least one of
a rule of automatically sharingnot sharing a child window of a shared window,
a rule of automatically sharingnot sharing a sibling window of a shared window,
a rule of automatically sharingnot sharing a window associated with an unshared window, and
a rule of automatically sharingnot sharing a window having specific identification information.
6. The apparatus according to claim 1, wherein
said execution unit displays an inquiry screen to inquire whether to share the display image to be processed, in accordance with the processing method determined by said determination unit, and
said storage unit additionally stores, in the setting file, a content of an inquiry result to the inquiry screen.
7. The apparatus according to claim 1, wherein said determination unit is executed when a newly generated display image overlaps a display image which has already been displayed.
8. A method of controlling a screen sharing apparatus which shares at least part of a display image on a display screen of the screen sharing apparatus by displaying the display image on a display screen of an information processing apparatus different from the screen sharing apparatus, the method comprising:
a determination step of determining a processing method regarding sharing of a display image to be processed, by referring to a setting file which is stored in a storage medium and describes a processing method indicating whether to permit sharing of a display image; and
an execution step of executing processing regarding sharing of the display image to be processed, in accordance with the processing method determined in the determination step.
9. A program which is stored in a computer readable storage medium and makes a computer control sharing at least part of a display image on a display screen of the computer by displaying the display image on a display screen of an information processing apparatus different from the computer, the program causing the computer to function as
a storage unit adapted to store a setting file which describes a processing method indicating whether to permit sharing of a display image,
a determination unit adapted to determine a processing method regarding sharing of a display image to be processed, by referring to the setting file stored in said storage unit, and
an execution unit adapted to execute processing regarding sharing of the display image to be processed, in accordance with the processing method determined by said determination unit.
10. A screen sharing system comprising a screen sharing server and a screen sharing client, said screen sharing server sharing at least part of a display image on a display screen of said screen sharing server by displaying the display image on a display screen of said screen sharing client,
said screen sharing server comprising:
a storage unit adapted to store a sharing rule which describes a processing method indicating whether to permit sharing of a display image;
a determination unit adapted to determine a processing method regarding sharing of a display image to be processed, by referring to the sharing rule stored in said storage unit;
an execution unit adapted to execute processing regarding sharing of the display image to be processed, in accordance with the processing method determined by said determination unit; and
a transmission unit adapted to transmit, to said screen sharing client, a shared image of the display image to be processed that is generated in accordance with execution by said execution unit,

said screen sharing client comprising:
a reception unit adapted to receive the shared image transmitted by said transmission unit from said screen sharing server; and
a display unit adapted to display the shared image received by said reception unit.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of producing a transgenic plant, comprising the steps of:
(a) inserting into the genome of a plant cell a recombinant, double-stranded DNA molecule comprising:
(i) a promoter which functions in cells of target plant tissue,
(ii) a structural DNA sequence that causes the production of an RNA sequence which encodes a sucrose phosphorylase enzyme,
(iii) a 3 non-translated DNA sequence which functions in plant cells to cause transcriptional termination and the addition of polyadenylated nucleotides to the 3 end of the RNA sequence;

(b) obtaining transformed plant cells; and
(c) regenerating from said transformed plant cells a genetically transformed plant, the genome of which contains said recombinant, double-stranded DNA molecule of step (a).
2. The method of claim 1, wherein said DNA sequence encoding sucrose phosphorylase enzyme is obtained from Streptococcus mutans.
3. The method of claim 2, wherein said DNA sequence encoding sucrose phosphorylase has the sequence shown in SEQ ID NO: 5.
4. The method of claim 1, wherein said genetically transformed plant exhibits a property selected from the group consisting of containing a modified carbohydrate content; increased polysaccharide (e.g. starch) content; enhanced yield; improved uniformity of the distribution of solids; and reduced susceptibility to bruising discoloration.
5. The method of claim 4, wherein said property is containing a modified carbohyhdrate content.
6. The method of claim 5, wherein said modified carbohydrate content is an increase in solids content.
7. The method of claim 6, wherein said genetically transformed plant is selected from the group consisting of potato and tomato.
8. The method of claim 4, wherein said property is improved uniformity of the distribution of solids.
9. The method of claim 8, wherein said genetically transformed plant is selected from the group consisting of potato and sweet potato.
10. The method of claim 4, wherein said property is reduced susceptibility to bruising discoloration.
11. The method of claim 10, wherein said genetically transformed plant is selected from the group consisting of potato, banana, apple, wheat, grape, and peach.
12. The method of claim 4, wherein said property is increased polysaccharide (e.g. starch) content.
13. The method of claim 12, wherein said genetically transformed plant is selected from the group consisting of maize, wheat, rice, tomato, potato, sweet potato, peanut, barley, cotton, strawberry, raspberry, and cassava.
14. The method of claim 4, wherein said property is enhanced yield.
15. The method of claim 14, wherein said genetically transformed plant is selected from the group consisting of maize, wheat, rice, tomato, potato, sweet potato, peanut, barley, sugarbeet, sugarcane, apple, pear, orange, peach, grape, cotton, strawberry, raspberry, and cassava.
16. The method of claim 1, wherein said plant cell is selected from the group consisting of a potato plant cell, a maize plant cell, a rice plant cell, a wheat plant cell, a tomato plant cell, a barley plant cell, a sugarbeet plant cell, a sweetpotato plant cell, a peanut plant cell, a sugarcane plant cell, a grape plant cell, a pear plant cell, an apple plant cell, an orange plant cell, a cassava plant cell, a banana plant cell, a plantain plant cell, a cotton plant cell, a strawberry plant cell, a raspberry plant cell, and a peach plant cell.
17. The method of claim 16, wherein said plant cell is a potato plant cell.
18. The method of claim 16, wherein said plant cell is a maize plant cell.
19. The method of claim 16, wherein said plant cell is selected from the group consisting of a wheat plant cell, a barley plant cell, a rice plant cell, and a tomato plant cell.
20. A recombinant, double-stranded DNA molecule comprising in sequence:
(a) a promoter which functions in cells of target plant tissue;
(b) a structural DNA sequence that causes the production of an RNA sequence which encodes a sucrose phosphorylase enzyme; and
(c) a 3 non-translated region which functions in plant cells to cause transcriptional termination and the addition of polyadenylated nucleotides to the 3 end of the RNA sequence.
21. The DNA molecule of claim 20, wherein said DNA sequence encoding sucrose phosphorylase enzyme is obtained from Streptococcus mutans.
22. The DNA molecule of claim 21, wherein said DNA sequence encoding sucrose phosphorylase has the sequence shown in SEQ ID NO: 5.
23. The DNA molecule of claim 20, wherein said promoter is selected from the group consisting of a zein promoter, a patatin promoter, a rice glutelin promoter, the soybean 7s promoter, a promoter of a subunit of ADPglucose pyrophosphorylase, the TFM7 promoter, and the TFM9 promoter.
24. A transformed plant cell comprising a recombinant, double- stranded DNA molecule comprising in sequence:
(a) a promoter which functions in said plant cell;
(b) a structural DNA sequence that causes the production of an RNA sequence which encodes a sucrose phosphorylase enzyme; and
(c) a 3 non-translated region which functions in plant cells to cause transcriptional termination and the addition of polyadenylated nucleotides to the 3 end of the RNA sequence.
25. The plant cell of claim 24, wherein said DNA sequence encoding sucrose phosphorylase enzyme is from Streptococcus mutans.
26. The plant cell of claim 25, wherein said DNA sequence encoding sucrose phosphorylase has the sequence shown in SEQ ID NO: 5.
27. The plant cell of claim 24, wherein said promoter is selected from the group consisting of a zein promoter, a patatin promoter, a rice glutelin promoter, the soybean 7s promoter, a promoter of a subunit of ADPglucose pyrophosphorylase, the TFM7 promoter, and the TFM9 promoter.
28. The plant cell of claim 24, wherein said plant cell is selected from the group consisting of a potato plant cell, a maize plant cell, a rice plant cell, a wheat plant cell, a tomato plant cell , a barley plant cell, a sugarbeet plant cell, a sweetpotato plant cell, a peanut plant cell, a sugarcane plant cell, a grape plant cell, a pear plant cell, an apple plant cell, an orange plant cell, a cassava plant cell, a banana plant cell, a plantain plant cell, and a peach plant cell.