All The Claims

What is claimed is:

1. A method for forming a buried oxide layer in a semiconductor substrate, comprising:
implanting a first dose of oxygen ions in the substrate in a first chamber while maintaining the substrate temperature in a range of about 300 C. to about 600 C.,
implanting a second dose of oxygen ions in the substrate while actively cooling the substrate to maintain the substrate temperature below approximately 150 C., and
annealing the substrate in an oxygen containing atmosphere to generate a buried oxide layer
2. The method of claim 1, wherein the step of implanting a second dose further comprises maintaining the substrate temperature in a range of about 50 C. to about 150 C.
3. The method of claim 1, wherein the annealing step further comprises maintaining the substrate temperature in a range of about 800 C. to about 1400 C.
4. The method of claim 1, wherein the step of implanting a first dose further comprises implanting the oxygen ions in the substrate in a first chamber having a device for heating the substrate.
5. The method of claim 4, wherein the step of implanting a second dose further comprises implanting the oxygen ions in the substrate in a second chamber having a device for actively cooling the substrate.
6. The method of claim 5, wherein the step of annealing the substrate further comprises annealing the substrate in a third chamber.
7. The method of claim 1, wherein the first dose of implanted oxygen ions is selected to be about 1016 to 1018 cm2.
8. The method of claim 1, wherein the second dose of implanted oxygen ions is selected to be approximately 1013 to 51015 cm2.
9. The method of claim 1, wherein the step of implanting a first dose of oxygen ions further comprises bombarding the substrate with oxygen ions having an energy in a range of about 30 keV to about 500 keV.
10. The method of claim 1, wherein the step of implanting a second dose of oxygen ions further comprises conductively cooling the substrate to maintain its temperature below 150 C.
11. The method of claim 10, wherein the step of conductively cooling the substrate further comprises gas cooling the substrate.
12. The method of claim 10, wherein the step of conductively cooling the substrate further comprises utilizing an elastomer to form a conductive thermal path between the substrate and a heat sink.
13. The method of claim 12, further comprising selecting the elastomer to be a silicone resin.
14. The method of claim 1, further comprising selecting the substrate to be any of silicon (Si), germanium (Ge), SiGe alloys.
15. The method of claim 1, further comprising selecting the substrate to be any of a 4-4, 3-5, or 2-6 binary or ternary compound.
16. The method of claim 1, wherein the buried oxide layer has a thickness in a range of about 20 nm to about 500 nm.
17. The method of claim 1, wherein the annealing step is performed while maintaining the substrate temperature in a range of about 800 C. to about 1400 C.
18. The method of claim 14, wherein the annealing step further comprises annealing the substrate for a time period in a range of about 1 hour to about 30 hours.
19. The method of claim 17, wherein the annealing step is performed in an atmosphere having an oxygen concentration in a range of about 1% to 100%.
20. A system for forming a buried oxide layer in a semiconductor substrate, comprising:
a first chamber for implanting a first dose of oxygen ions in the substrate, the first chamber having a heating device for maintaining the substrate temperature in a range of about 300 C. to 600 C. during ion implantation,
a second chamber for implanting a second dose of oxygen ions in the substrate, the second chamber having a cooling device for maintaining the substrate chamber below approximately 150 C. during ion implantation, and
a third chamber for annealing the substrate implanted with ions in the first and second chambers, the third chamber having a heating device capable of maintaining the substrate chamber in a range of about 800 C. to about 1400 C. during annealing.
21. The system of claim 20, wherein the cooling device in the second chamber maintains the substrate temperature in a range of about 50 C. to about 150 C.
22. The system of claim 20, wherein the cooling device conductively cools the substrate.
23. The system of claim 20, wherein the first chamber includes an ion beam apparatus for generating an ion beam having an energy in a selected range.
24. The system of claim 23, wherein the energy of the ion beam is in a range of about 30 keV to about 500 keV.
25. The system of claim 20, wherein the first chamber further comprises an ion guidance device for directing the ion beam onto the substrate.
26. The system of claim 20, wherein each of the chambers includes a holder for holding the substrate.
27. The system of claim 26, wherein the holder in the second chambers functions as a heat sink for removing heat from the substrate.
28. The system of claim 27, wherein the cooling device is coupled to the holder and the substrate and provides a conductive thermal path between the substrate and the holder.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method for performing clocked operations in an electronic device, the method comprising the steps of:
performing, in a device, first and second operations responsive to a timing clock having a primary frequency f, wherein the device is capable of performing the operations within X and Y cycles of the clock, respectively, and wherein X cycles of the clock correspond to a time interval T1 with the clock operating at the frequency f, and, accordingly, the device is capable of performing XY instances of the second operation within time interval T1 with the clock operating at the frequency f;
generating, during the time interval T1, at least one extra cycle of the clock, to selectively reduce performance time for the first operation; and
masking a certain effect of the at least one extra cycle for the second operation, so that instances of the second operation during the interval T1 remain no greater in number than XY.
2. The method of claim 1, wherein a first clock signal has frequency f and a second clock signal has a frequency greater than f, and wherein generating the least one extra cycle comprises selecting, during some of the time T1, the second clock signal for output as the timing clock.
3. The method of claim 2, wherein instances of the second operation are initiated by asserting an operation-initiating control signal in conjunction with asserting the timing clock, and wherein masking the effect of the a least one extra cycle comprises altering timing of the control signal, so that assertion of the control signal occurs during a different time interval than does assertion of the extra clock cycle.
4. The method of claim 2, wherein a third clock signal has a frequency greater than the frequency of the second clock signal, the method comprising clocking a state machine by the third clock signal.
5. The method of claim 4, wherein initiating the at least one extra cycle includes asserting an extra-clock-cycle-initiating control signal as an input to the state machine.
6. The method of claim 4, the method comprising clocking an output register by the third clock signal.
7. The method of claim 6, wherein initiating the least one extra cycle includes asserting an extra-clock-cycle-initiating control signal as an input to the output register.
8. The method of claim 4, wherein an output register outputs the timing clock responsive to output signals of the state machine.
9. The method of claim 8, wherein the output register outputs a mask signal for masking the certain effect of the extra cycle responsive to output signals of the state machine.
10. An apparatus for performing clocked operations comprising:
first circuitry for performing first and second operations responsive to a timing clock having a primary frequency f, wherein the first circuitry is capable of performing the operations within X and Y cycles of the clock, respectively, and wherein X cycles of the clock correspond to a time interval T1 with the clock operating at the frequency f, and, accordingly, the first circuitry is capable of performing XY instances of the second operation within time interval T1 with the clock operating at the frequency f; and
second circuitry for generating, during the time interval T1, at least one extra cycle of the clock, to reduce performance time for the first operation, and for masking an affect of the at least one extra cycle with respect to the second operation, so that instances of the second operation during the interval T1 remain no greater in number than XY.
11. The apparatus of claim 10, wherein a first clock signal has frequency f and a second clock signal has a frequency greater than f, and wherein the second circuitry comprises circuitry for selecting, during some of the time T1, the second clock signal for output as the timing clock.
12. The apparatus of claim 11, wherein the first circuitry is operable to initiate instances of the second operation responsive to an operation-initiating-control signal asserted in conjunction with the timing clock, and wherein the second circuitry is operable to alter timing of the control signal, so that assertion of the control signal occurs during a different time interval than does assertion of the extra clock cycle.
13. The apparatus of claim 11, wherein a third clock signal has a frequency greater than the frequency of the second clock signal, and the second circuitry comprises a state machine clocked by the third clock signal.
14. The apparatus of claim 13, wherein the second circuitry is operable to initiate the at least one extra cycle responsive to an extra-clock-cycle-initiating control signal input to the state machine.
15. The apparatus of claim 13, wherein the second circuitry comprises an output register clocked by the third clock signal.
16. The apparatus of claim 15, wherein the second circuitry is operable to initiate the at least one extra cycle responsive to an extra-clock-cycle-initiating control signal input to the output register.
17. The apparatus of claim 13, wherein the second circuitry comprises an output register operable to output the timing clock responsive to output signals of the state machine.
18. The apparatus of claim 17, wherein the output register is operable to output a mask signal for masking the certain effect of the extra cycle responsive to output signals of the state machine.
19. A computer program product for performing clocked operations in an electronic device, wherein the device is operable to perform first and second operations responsive to a timing clock having a primary frequency f, the device being capable of performing the operations within X and Y cycles of the clock, respectively, and wherein X cycles of the clock correspond to a time interval T1 with the clock operating at the frequency f, and, accordingly, the device is capable of performing XY instances of the second operation within time interval T1 with the clock operating at the frequency f, the computer program product comprising:
first instructions for generating, during the time interval T1, at least one extra cycle of the clock, to selectively reduce performance time for the first operation; and
second instructions for masking a certain effect of the at least one extra cycle for the second operation, so that instances of the second operation during the interval T1 remain no greater in number than XY.
20. The computer program product of claim 19, wherein a first clock signal has frequency f and a second clock signal has a frequency greater than f, and wherein first instructions for generating the least one extra cycle comprise instructions for selecting, during some of the time T1, the second clock signal for output as the timing clock.
21. The computer program product of claim 20, wherein instances of the second operation are initiated in the device by asserting an operation-initiating control signal in conjunction with asserting the timing clock, and wherein the second instructions comprise instructions for altering timing of the control signal, so that assertion of the control signal occurs during a different time interval than does assertion of the extra clock cycle.

1. A method comprising:
receiving a read request at a local storage server, the read request indicating client-requested data for a storage operating system to retrieve the client-requested data from a data container; and
responsive to the receiving of the read request, utilizing a readahead engine to issue a readahead request, wherein:
a portion of the readahead request for a set of data blocks that can be read from a local storage system is delivered to the local storage system, and
a portion of the readahead request for another set of data blocks that can be read from a remote storage system is delivered to the remote storage system;
and wherein issuance of the readahead request includes communication of a hint from the local storage server to a remote storage server which manages the remote storage system, the hint including a data structure which includes a plurality of parameters and indicates a read access pattern;
the hint for use at the remote storage system to identify data to retrieve in response to the readahead request.
2. The method of claim 1, wherein the readahead request is a speculative readahead request or a client-driven readahead request.
3. The method of claim 1, further comprising coalescing remote requests.
4. The method of claim 3, wherein the coalescing of the read requests comprises:
responsive to identifying a new remote request for data, identifying an existing outstanding remote request for the data; and
canceling the new remote request for the data.
5. The method of claim 4, wherein the identifying of the existing outstanding remote request for the data includes parsing a list of outstanding remote requests.
6. The method of claim 1, wherein issuance of the readahead request comprises issuing a readahead request for a plurality of data blocks, wherein each request for a data block from a plurality of requests has an associated header indicating that the data block is from the plurality of requested data blocks.
7. The method of claim 1, further comprising:
selecting an amount of readahead data to retrieve based on one or more factors; and
retrieving the selected amount of readahead data.
8. The method of claim 7, wherein the one or more factors include historical information about prior requests associated with the data container.
9. The method of claim 1, wherein the hint is generated utilizing the historical information.
10. The method of claim 1, wherein the data container is a sparse volume.
11. A storage server comprising:
a file system protocol layer to receive a client read request, the client read request indicating client-requested data for the storage operating system to retrieve from the data container; and
a readahead engine to issue a readahead request in response to the received read request, wherein:
a portion of the readahead request for a set of data blocks that can be read from a local storage system is delivered to the local storage system, and
a portion of the readahead request for another set of data blocks that can be read from a remote storage system is delivered to the remote storage system; and wherein issuance of the readahead request includes communication of a hint from the storage server to a remote storage server which manages the remote storage system, the hint including a data structure which includes a plurality of parameters and indicates a read access pattern, the hint for use at the remote storage system to identify data to retrieve in response to the readahead request.
12. The storage server of claim 11 further comprising a request path, the request path having a speculative readahead component and a client-driven readahead component.
13. The storage server of claim 11, further including:
a fetch on demand component to receive a new remote request;
a buffer to store outstanding remote requests; and
a request coalescing component to coalesce redundant read requests.
14. The storage server of claim 13, wherein the request coalescing component is to identify an existing outstanding remote request for the data; and
to cancel the new remote request for the data.
15. The storage server of claim 14, wherein the identifying of the existing outstanding remote request for the data includes parsing the buffer that stores outstanding remote requests.
16. The storage server of claim 11, wherein issuance of the readahead requests includes:
issuing a readahead request for a plurality of data blocks, wherein each request for a data block from the plurality of requests has an associated header indicating that the data block is from the plurality of requested data blocks.
17. The storage server of claim 11, further comprising:
logic to select an amount of readahead data to retrieve based on one or more factors; and
logic to retrieve the selected amount of readahead data.
18. The storage server of claim 17, wherein the one or more factors include historical information about prior requests associated with the data container.
19. The storage server of claim 18, wherein the hint is generated utilizing the historical information.
20. The storage server of claim 11, wherein the data container is a sparse volume.
21. A method comprising:
receiving a read request at a front-end system, the read request indicating client-requested data for a storage operating system to retrieve from a data container;
determining in the front-end system that the client-requested data is stored at a back-end system;
accessing historical information associated with prior read requests;
utilizing the historical information to generate, in the front-end system, a hint that includes a data structure which includes a plurality of parameters and indicates a read access pattern;
communicating the hint from the front-end system to the back-end system; and
utilizing the hint to service a readahead request associated with the read request.
22. A machine-readable program storage medium having stored thereon data representing sets of instructions which, when executed by a machine, cause the machine to:
receive a client read request at a local storage server, the client read request indicating client-requested data for the storage operating system to retrieve from the data container; and
issue a readahead request in response to the received read request, wherein:
a portion of the readahead request that can be read from a local storage system is delivered to the local storage system, and
a portion of the readahead request that can be read from a remote storage system is delivered to the remote storage system;
and wherein issuance of the readahead request includes communication of a hint from the local storage server to a remote storage server which manages the remote storage system, the hint including a data structure which includes a plurality of parameters and indicates a read access pattern, the hint for use at the remote storage system to identify data to retrieve in response to the readahead request.
23. The method of claim 1, wherein the hint includes an indication of how many data blocks to retrieve, an indication of how many of the data blocks to retrieve are must-read data blocks, and an indication of how many of the data blocks to retrieve are speculative readahead data blocks.
24. The storage server of claim 11, wherein the hint includes an indication of how many data blocks to retrieve, an indication of how many of the data blocks to retrieve are must-read data blocks, and an indication of how many of the data blocks to retrieve are speculative readahead data blocks.
25. The method of claim 21, wherein the hint includes an indication of how many data blocks to retrieve, an indication of how many of the data blocks to retrieve are must-read data blocks, and an indication of how many of the data blocks to retrieve are speculative readahead data blocks.
26. The machine-readable program storage medium of claim 22, wherein the hint includes an indication of how many data blocks to retrieve, an indication of how many of the data blocks to retrieve are must-read data blocks, and an indication of how many of the data blocks to retrieve are speculative readahead data blocks.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A recording method for optical recording medium comprising:
irradiating repeatedly by a recording power (Pw) light and a cooling power (Pb) light to an information layer comprising a phase-changing recording layer of the optical recording medium,
forming a few types of amorphous mark vary from at least any one from length and area, and
recording information and forming a crystal space upon irradiation of an erasing power (Pe) light,
wherein the recording power (Pw) light, the cooling power (Pb) light, and the erasing power (Pe) light satisfying a relation of the following equation Pw>Pe>Pb, and
wherein the recording power (Pw) light, cooling power (Pb) light, and cooling controlling power (Pm) light satisfying a relation of the following equation Pw>Pm>Pb, when forming at least one type of amorphous mark upon irradiation by a cooling controlling power (Pm) light to in between the recording power (Pw) light and cooling power (Pb) light.
2. The recording method for optical recording medium according to claim 1, wherein the recording method for optical recording medium records 3 value and more multi-value data as information by modulating an area of the amorphous mark inside a recording cell.
3. The recording method for optical recording medium according to claim 1, wherein the erasing power (Pe) and cooling controlling power (Pm) are equal.
4. The recording method for optical recording medium according to claim 1, wherein the recording method for optical recording medium controls at least any one of a length and an area of the amorphous mark by changing an irradiation time of the cooling controlling power (Pm) light.
5. The recording method for optical recording medium according to claim 1, wherein the recording method for optical recording medium fixes an irradiation time of the cooling controlling power (Pm) light shorter in a case where any one of a short length amorphous mark and a small area amorphous mark is formed.
6. The recording method for optical recording medium according to claim 1, wherein phase change of the phase-changing recording layer between crystal state and amorphous state is generated and information is recorded by light irradiation to the phase-changing recording layer.
7. The recording method for optical recording medium according to claim 1, wherein the phase-changing recording layer comprises Sb, and at least one element selected from Ge, Ga, In, Zn, Mn, Sn, Ag, Mg, Ca, Bi, Se and Te.
8. The recording method for optical recording medium according to claim 1, wherein the optical recording medium comprises a substrate, and on the substrate in the order or reverse order of a lower protective layer, a phase changing recording layer, an upper protective layer, a reflective layer and a thermal diffusion layer.
9. The recording method for optical recording medium according to claim 8, wherein the thermal diffusion layer comprises any one of an ITO (indium oxide-stannum oxide) and an IZO (indium oxide-zinc oxide).
10. The recording method for optical recording medium according to claim 8, wherein a thickness of the thermal diffusion layer is 10 nm to 200 nm.
11. The recording method for optical recording medium according to claim 8, wherein the reflective layer comprises at least one element selected from Au, Ag, Cu, W, Al, and Ta.
12. The recording method for optical recording medium according to claim 1, wherein the optical recording medium comprises a first substrate, a first information layer, an intermediate layer, and a second information layer and a second substrate.
13. The recording method for optical recording medium according to claim 12, wherein the first information layer comprises in an order of a first lower protective layer, a first phase-changing recording layer, a first upper protective layer, a first reflective layer, and a first thermal diffusion layer.
14. The recording method for optical recording medium according to claim 12, wherein the second information layer comprises in an order of a second lower protective layer, a second phase-changing recording layer, a second upper protective layer, and a second reflective layer.
15. The recording method for optical recording medium according to claim 13, wherein a thickness of the first reflective layer is 3 nm to 20 nm.
16. The recording method for optical recording medium according to claim 1, further comprising an intermediate layer,
wherein the information layer is provided with 2 layers or more through the intermediate layer, and records information in at least a one layer phase-changing recording layer other than a phase-changing recording layer that is arranged at the most back side of a laser beam irradiating side,
wherein an information layer comprising a phase-changing recording layer uses a multi-layered phase-changing optical recording medium provided with 2 layers or more through an intermediate layer.
17. An optical recording apparatus comprising:
an irradiating unit configured to irradiate repeatedly by a recording power (Pw) light and a cooling power (Pb) light to an information layer comprising a phase-changing recording layer of the optical recording medium,
a forming unit configured to form a few types of amorphous mark vary from at least any one from length and area, and
a recorder configured to record information and forming a crystal space upon irradiation of an erasing power (Pe) light,
wherein the recording power (Pw) light, the cooling power (Pb) light, and the erasing power (Pe) light satisfying a relation of the following equation Pw>Pe>Pb, and
wherein the recording power (Pw) light, cooling power (Pb) light, and cooling controlling power (Pm) light satisfying a relation of the following equation Pw>Pm>Pb, when forming at least one type of amorphous mark upon irradiation by a cooling controlling power (Pm) light to in between the recording power (Pw) light and cooling power (Pb) light.