1. A method of forming devices on a semiconductor wafer, the method comprising:
depositing an oxide layer overlaying the semiconductor wafer;
depositing a layer of SiCr;
depositing a mask layer of TiN overlaying the layer of SiCr;
patterning the layer of SiCr and TiN layer to a desired shape;
applying a HFHCL cleaning process to the semiconductor wafer;
removing any remaining mask layer of TiN;
depositing one or more interconnect metal layers;
wherein applying a HFHCL process further comprises, applying a 40:1 dilute of HF for approximately 60 seconds and applying a 6:1 dilute of HCL at approximately 50\xb0 C. for approximately 70 seconds.
2. The method of claim 1, further comprising:
patterning a contact opening through the oxide layer to expose a portion of a working surface of the semiconductor wafer; and
depositing Pt to form a PtSi contact junction in the contact opening.
3. The method of claim 1, further comprising:
patterning an opening through the one or more interconnect metal layers to the patterned layer of SiCr to form a thin film resistor.
4. The method of claim 1, wherein patterning the layer of SiCr and TiN layer to a desired shape further comprises:
applying a TiN dry etch; and
applying a SiCr wet etch after the TiN dry etch.
5. The method of claim 1, wherein patterning the layer of SiCr and TiN layer to a desired shape further comprises:
applying a TiN dry etch until the desired amount of TiN and SiCr layer is removed; and
applying at least one of a plasma and HF dip.
6. The method of claim 1, further comprising:
forming at least one device junction in the semiconductor wafer.
7. The method of claim 6, further comprising:
forming at least one field oxide layer on the working surface of the semiconductor wafer; and
using the at least one field oxide layer as a mask in defining an edge of the at least one device junction.
8. The method of claim 6, further comprising:
forming a bottom plate of a capacitor with the at least one device junction;
forming an upper plate of the capacitor with the layer of SiCr and the one or more interconnect metal layers.
9. A method of forming a semiconductor device, the method comprising:
forming at least one hard mask overlaying at least one layer of resistive material;
forming at least one opening to a working surface of a silicon substrate of the semiconductor device;
cleaning the semiconductor device with a diluted HFHCL process, wherein the diluted HFHCL solution includes a 40:1 dilute of HF that is applied for approximately 60 seconds and a 6:1 HCL at approximately 50\xb0 C. that is applied for approximately 70 seconds;
after cleaning with the diluted HFHCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate; and
forming interconnect metal layers.
10. The method of claim 9, further comprising:
forming at least one oxide layer between the working surface of the silicon substrate and the layer of resistive material.
11. The method of claim 9, wherein the layer of resistive material is a SiCr layer.
12. The method of claim 9, wherein the layer of resistive material is a NiCr layer.
13. The method of claim 9, wherein the hard mask is a TiN layer.
14. The method of claim 9, wherein the hard mask is a TiW layer.
15. The method of claim 9, wherein forming the silicide contact junction further comprises:
depositing Pt in the opening to form a PtSi layer.
16. The method of claim 9, further comprising:
removing the hard mask with peroxide after the formation of the at least one silicide contact junction.
17. The method of claim 9, further comprising:
patterning the resistive material layer to form a resistor.
18. The method of claim 17, wherein patterning the resistive material layer, further comprises:
applying a SiCr wet etch.
19. The method of claim 9, further comprising:
patterning the interconnect metal layers.
20. The method of claim 19, wherein patterning the interconnect metal layers, further comprises:
applying a dry etch to pattern a layer of AlCu of the interconnect metal layers; and
after the dry etch, applying a wet etch to pattern a layer of TiW of the interconnect metal layers.
21. A method of forming devices in an integrated circuit, the method comprising:
forming at least one patterned field oxide on a select portion of a working surface of a substrate of the integrated circuit;
forming at least one doped device junction in the substrate using the at least one field oxide as mask;
depositing an oxide layer overlaying the substrate;
depositing a SiCr layer overlaying the oxide layer;
depositing a mask TiN layer overlaying the SiCr layer;
patterning the TiN and SiCr layers;
forming at least one opening through the oxide layer to the at least one doped junction in the substrate;
cleaning the substrate with a diluted HFHCL process;
after cleaning with the diluted HFHCL process, forming at least one silicide contact junction in the at least one of the opening to the at least one doped junction;
removing any remaining mask TiN layer; and
forming interconnect metal layers.
22. The method of claim 21, further comprising:
performing a aqua regia etch after forming the at least one silicide contact junction.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. An automatically collapsible prop for propping all kinds of loads such as golf bag, knapsack, coolie rack, etc., comprising:
a first tubular member having an upper end and an open lower end;
a second tubular member relatively moveably inserted in said first tubular member so as to slide down by gravity relative to it to protrude from the open lower end of said first tubular member by a predetermined length when lifting said first member in a sloping or vertical position;
a third member rotationally mounted on a fixed shaft attached to said second tubular member so as to pivot relative to said first and second members about said fixed shaft;
a first engaging groove formed in the surface of said first member in the longitudinal direction to allow said second member with said third member to slide relative to said first member; and
a rack-gear mechanism for automatically pivoting said third member on said fixed shaft by a predetermined propping angle when the part of said second member protruding from the open lower end of said first member is pressed against the ground, and pushed completely into the open lower end of said first member, thereby fixing said third member on the ground in a triangular shape with said first member.
2. An automatically collapsible prop as defined in claim 1, wherein said rack-gear mechanism comprises:
a rack fixedly mounted on the inside of said first member so as to protrude into the internal space of said second member;
a gear attached to the upper end of said third member for engaging said rack through said first and second members to pivot said third member on said fixed shaft relative to said second member;
a second engaging groove formed in the surface of said second member in the longitudinal direction to allow said gear to engage said rack for smooth pivoting;
a shaft base attached around said second engaging groove for mounting said fixed shaft and having a stopping device to limit the sliding distance of said second member relative to said first member by abutting both ends of said first engaging groove; and
a third engaging groove formed in the surface of said second member facing said rack for receiving said rack so as to allow said second member to longitudinally move relative to said first member and thus said rack.
3. An automatically collapsible prop as defined in claim 2, wherein said gear is a sectional gear, and the tooth of said gear and rack has a rectangular shape.
4. An automatically collapsible prop as defined in claim 2, wherein the lengths of said first and third engaging grooves and the position of said rack are designed to obtain said predetermined propping angle of said third member.
5. An automatically collapsible prop as defined in claim 2, wherein said third member may be integrally formed with said gear, or separately formed and connected to said gear.
6. A golf bag provided with an automatically collapsible prop as defined in one of claims 1 to 5.
7. A mirror provided with an automatically collapsible prop as defined in one of claims 1 to 5.
8. A three-legged stand provided with an automatically collapsible prop as defined in one of claims 1 to 5.
9. An easel provided with an automatically collapsible prop as defined in one of claims 1 to 5.
10. An information indication plate provided with an automatically collapsible prop as defined in one of claims 1 to 5.
11. A ladder provided with an automatically collapsible prop as defined in one of claims 1 to 5.
12. An automatically collapsible prop for propping all kinds of loads such as golf bag, knapsack, coolie rack, etc., comprising:
a first tubular member having an upper end and an open lower end;
a second tubular member relatively moveably inserted in said first tubular member so as to slide down by gravity relative to it to protrude from the open lower end of said first tubular member by a predetermined length when lifting said first member in a sloping or vertical position;
a third member rotationally mounted on a fixed shaft attached to said second tubular member so as to pivot relative to said first and second members about said fixed shaft;
a first engaging groove formed in the surface of said first member in the longitudinal direction to allow said second member with said third member to slide relative to said first member;
a rack fixedly mounted on the inside of said first member so as to protrude into the internal space of said second member; and a gear attached to the upper end of said third member for engaging said rack through said first and second members to pivot said third member, whereby free sliding down of said second member to protrude of the lower end part from the lower end of said first member causes the upper side surface of the tooth of said rack to push upward the lower side surface of the tooth of said gear to rotate said gear clockwise for said third member to automatically collapse towards said first member, and laying down the lower end part of said second member protruding from the lower end of said first member to completely insert the lower end part of said second member into said first member causes the lower side surface of the tooth of said rack to push downward the upper side surface of the tooth of said gear to rotate said gear counterclockwise for said third member to automatically spread from said first member in a triangular shape.