All The Claims

1. A group III nitride semiconductor device, comprising:
a group III nitride semiconductor supporting base, the group III nitride semiconductor supporting base being composed of a group III nitride semiconductor, the group III nitride semiconductor supporting base having a primary surface, the primary surface being tilted at an angle with reference to a reference plane, the reference plane being orthogonal to a reference axis, and the reference axis extending in a direction of a c-axis of the group III nitride semiconductor;
a gallium nitride based semiconductor region provided in contact with the primary surface of the group III nitride semiconductor supporting base, the gallium nitride based semiconductor region having an oxygen, the primary surface having one of semi-polarity and non-polarity, the gallium nitride based semiconductor region including a first conductive type gallium nitride based semiconductor layer and one or more gallium nitride based semiconductor layers, a thickness of the first conductive type gallium nitride based semiconductor layer being larger than that of any of the gallium nitride based semiconductor layers, the first conductive type gallium nitride based semiconductor layer including a donor, and the donor being different from oxygen; and
an active layer provided in contact with the gallium nitride based semiconductor region.
2.-29. (canceled)
30. The group III nitride semiconductor device according to claim 1, further comprising:
a second conductive type gallium nitride based semiconductor layer provided on the active layer, the active layer being provided between the first conductive type gallium nitride based semiconductor layer and the second conductive type gallium nitride based semiconductor layer,
wherein the gallium nitride based semiconductor region includes an optical guide layer provided between the active layer and the first conductive type gallium nitride based semiconductor layer.
31. The group III nitride semiconductor device according to claim 1, wherein the active layer has an oxygen concentration of 5\xd71016 cm\u22123 or more, and the active layer has an oxygen concentration of 5\xd71018 cm\u22123 or less.
32. The group III nitride semiconductor device according to claim 30, wherein the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71016 cm\u22123 or more, and the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71018 cm3 or less.
33. The group III nitride semiconductor device according to claim 30, wherein
the first conductive type gallium nitride based semiconductor layer has a carbon concentration of 5\xd71018 cm\u22123 or less,
the second conductive type gallium nitride based semiconductor layer has a carbon concentration of 5\xd71018 cm\u22123 or less, and
the active layer has a carbon concentration of 5\xd71018 cm\u22123 or less.
34. The group III nitride semiconductor device according to claim 30, wherein
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71016 cm\u22123 or more, and
the active layer has an oxygen concentration of 5\xd71016 cm\u22123 or more.
35. The group III nitride semiconductor device according to claim 1, wherein
the active layer includes well layers and barrier layers alternatively arranged, and
the well layers have an oxygen concentration of 6\xd71017 cm3 or less.
36. The group III nitride semiconductor device according to claim 30, further comprising another second conductive type gallium nitride based semiconductor layer,
wherein the second conductive type gallium nitride based semiconductor layer has a band gap larger than that of the other second conductive type gallium nitride based semiconductor layer,
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration higher than that of the active layer,
the second conductive type gallium nitride based semiconductor layer is provided between the other second conductive type gallium nitride based semiconductor layer and the active layer, and
the second conductive type gallium nitride based semiconductor layer forms a junction with the other second conductive type gallium nitride based semiconductor layer.
37. The group III nitride semiconductor device according to claim 30, further comprising an optical guide layer, the optical guide layer being composed of gallium nitride based semiconductor and being provided between the active layer and the second conductive type gallium nitride based semiconductor layer,
wherein the active layer extends along a plane inclined at an angle with reference to the reference plane, and the second conductive type gallium nitride based semiconductor layer is an electron block layer.
38. The group III nitride semiconductor device according to claim 30, wherein the primary surface has a normal line extending at an angle in a range of 10 to 170 degrees with reference to the reference axis.
39. The group III nitride semiconductor device according to claim 1, wherein the primary surface has a normal line extending at an angle within a range of from 10 to 80 degrees and from 100 to 170 degrees with reference to the reference axis.
40. The group III nitride semiconductor device according to claim 1, wherein
the primary surface has a normal line extending at an angle within a range of from 63 to 80 degrees and from 100 to 117 degrees with reference to the reference axis.
41. The group III nitride semiconductor device according to claim 1, wherein the donor is silicon.
42. The group III nitride semiconductor device according to claim 1, wherein the primary surface has semi-polarity.
43. The group III nitride semiconductor device according to claim 1, wherein the primary surface has non-polarity.
44. An epitaxial wafer for a group III nitride semiconductor device, comprising:
a group III nitride semiconductor substrate having a primary surface, the group III nitride semiconductor substrate being composed of a group III nitride semiconductor, and the primary surface being tilted at an angle with reference to a reference plane, the reference plane being orthogonal to a reference axis, and the reference axis extending in a direction of a c-axis of the group III nitride semiconductor;
a gallium nitride based semiconductor region having an oxygen, the gallium nitride based semiconductor region being provided on the primary surface of the group III nitride semiconductor substrate, the gallium nitride based semiconductor region including a first conductive type gallium nitride based semiconductor layer and one or more gallium nitride based semiconductor layers, a thickness of the first conductive type gallium nitride based semiconductor layer being larger than that of any of the gallium nitride based semiconductor layers, the first conductive type gallium nitride based semiconductor layer including a donor, and the donor being different from oxygen; and
an active layer provided on the first conductive type gallium nitride based semiconductor layer; and
a second conductive type gallium nitride based semiconductor layer provided on the active layer;
the primary surface having one of semi-polarity and non-polarity.
45. The epitaxial wafer according to claim 44, further comprising another second conductive type gallium nitride based semiconductor layer,
wherein the second conductive type gallium nitride based semiconductor layer has a band gap larger than that of the other second conductive type gallium nitride based semiconductor layer,
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration higher than that of the active layer,
the second conductive type gallium nitride based semiconductor layer is provided between the other second conductive type gallium nitride based semiconductor layer and the active layer, and
the second conductive type gallium nitride based semiconductor layer forms a junction with the other second conductive type gallium nitride based semiconductor layer.
46. The epitaxial wafer according to claim 44, wherein
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71016 cm\u22123 or more,
the second conductive type gallium nitride based semiconductor layer has an oxygen concentration of 5\xd71018 cm\u22123 or less,
the second conductive type gallium nitride based semiconductor layer is an electron block layer,
the active layer has well layers and barrier layers alternatively arranged,
the gallium nitride based semiconductor region further includes an optical guide layer composed of gallium nitride based semiconductor, and the optical guide layer is provided between the active layer and the first conductive type gallium nitride based semiconductor layer, and
the optical guide layer extends along a plane inclined with reference to the reference plane.
47. The epitaxial wafer according to claim 44, wherein the primary surface has a normal line tilted at an angle of from 10 to 170 degrees with reference to the reference axis.
48. The epitaxial wafer according to claim 44, wherein the primary surface has a normal line tilted at an angle within a range of from 10 to 80 degrees and from 100 to 170 degrees with reference to the reference axis.
49. The epitaxial wafer according to claim 44, wherein the primary surface has a normal line tilted at an angle within a range of from 63 to 80 degrees and from 100 to 117 degrees with reference to the reference axis.
50. The epitaxial wafer according to claim 44, wherein the donor is silicon.
51. The epitaxial wafer according to claim 44, wherein the primary surface has semi-polarity.
52. The epitaxial wafer according to claim 44, wherein the primary surface has non-polarity.
53. The group III nitride semiconductor device according to claim 1, wherein the gallium nitride based semiconductor region has an oxygen concentration larger than the active layer.
54. The epitaxial wafer according to claim 44, wherein the gallium nitride based semiconductor region has an oxygen concentration larger than the active layer.
55. The group III nitride semiconductor device according to claim 30, wherein the gallium nitride based semiconductor region has an oxygen concentration larger than the second conductive type gallium nitride based semiconductor layer.
56. The epitaxial wafer according to claim 44, wherein the gallium nitride based semiconductor region has an oxygen concentration larger than the second conductive type gallium nitride based semiconductor layer.

The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.

1. A microparticle dispersion liquid manufacturing apparatus comprising:
a container having a mesh plate disposed to partition the interior of the container into upper and lower portions, configured for performing a process in which a poorly soluble drug and a dispersion stabilizer are dissolved in a volatile organic solvent, a residue, obtained by removal by evaporation of the organic solvent contained in the solution, is fixed on an inner wall of the lower portion of the container lower than the mesh plate, and water is injected into the upper portion of the container higher than the mesh plate;
a light irradiating unit that irradiates light on the residue fixed on the inner wall on the lower portion of the container; and
a flow unit that makes the water flow near an interface of the residue and the water in the interior of the container,
wherein a microparticle dispersion liquid, having microparticles, containing the poorly soluble drug and the dispersion stabilizer, dispersed in water, is manufactured by the flow unit making the water flow near the interface of the residue and the water in the interior of the container and the light irradiating unit irradiating the light on the residue, and
wherein the flow unit includes a stirring unit that is positioned on the mesh plate, that stirs the water injected into the upper portion of the container and makes the water flow near the interface of the residue and the water in the lower portion of the container.
2. A microparticle dispersion liquid manufacturing apparatus comprising:
a container having a recess disposed at an annular region of a circumferential edge portion of the bottom surface, configured for performing a process in which a poorly soluble drug and a dispersion stabilizer are dissolved in a volatile organic solvent, a residue, obtained by removal by evaporation of the organic solvent contained in the solution, is fixed on the circumferential edge recess of the bottom surface of the container, and water is injected into an interior of the container;
a light irradiating unit that irradiates light on the residue fixed on the circumferential edge recess of the bottom surface of the container; and
a flow unit that makes the water flow near an interface of the residue and the water in the interior of the container, the flow unit being positioned above the circumferential edge recess of the bottom surface of the container,
wherein a microparticle dispersion liquid, having microparticles, containing the poorly soluble drug and the dispersion stabilizer, dispersed in water, is manufactured by the flow unit making the water flow near the interface of the residue and the water in the interior of the container and the light irradiating unit irradiating the light on the residue, and
wherein the flow unit includes a stirring unit that stirs the water injected into the interior of the container and makes the water flow near the interface of the residue and the water in the interior of the container.

1. A system, comprising:
a processor; and
a memory containing a program that, when executed by the processor, performs an operation for incorporating performance data into an executable file for an application, the operation comprising:
monitoring performance of the executable file for the application while the executable file is executing on a node;
determining the performance data of the application based on the monitored performance and one or more system characteristics of the node;
incorporating the performance data into the executable file for the application for subsequent retrieval from the executable file, further comprising:
storing the performance data in a plurality of global variables in a source code for the application; and
compiling the source code including the performance data stored in the plurality of global variables to create the executable file for the application, such that the performance data can subsequently be retrieved from the executable file;
deploying the executable file containing the incorporated performance data for the application to a first node for execution;
retrieving the performance data from the executable file for use in managing the execution of the executable file; and
performing a remedial action for the deployed application, upon determining that a potential workload overflow problem exists for the deployed application based on system information describing attributes of the first node and the retrieved performance data.
2. The system of claim 1, wherein the application is a processing element in a stream computing application, and the operation further comprising:
retrieving system information for each of a plurality of nodes, wherein the plurality of nodes comprises the node;
selecting one or the plurality of nodes to deploy the processing element based on the retrieved system information and the performance data incorporated into the executable file for the processing element; and
deploying the processing element for execution on the selected node.
3. The system of claim 2, wherein the processing element is deployed alongside a plurality of other processing elements, and the operation further comprising:
establishing an operator graph of the plurality of other processing elements and the deployed processing element, the operator graph defining at least one execution path and wherein at least one of the processing elements of the operator graph is configured to receive data from at least one upstream processing element and transmit data to at least one downstream processing element.
4. The system of claim 1, wherein the performance data includes at least one of: a processor type, a number of processors, an amount of memory, a type of memory, a type of storage, one or more network connectivity characteristics, and a measure of system workload.
5. The system of claim 1, the operation further comprising:
determining a number of instances of the application that should be created, based on system information for systems on which the instances of the application will be executed and further based on the performance data; and
creating the determined number of instances of the application on the systems, such that load can be balanced between the created instances of the application.
6. The system of claim 1, wherein performing a remedial action includes at least one of:
(i) spawning a second instance of the application on a second node and discarding the deployed executable file on the first node,
(ii) migrating the deployed executable file on the first node to a second node,
(iii) modifying an operator graph to reduce a workload of the deployed executable file, and
(iv) modifying one or more operations performed by the deployed executable file.
7. The system of claim 1, the operation further comprising:
generating a status notification for the deployed executable file, the status notification indicating a current amount of workload for the executable file and a maximum amount of workload for the executable file, based on current workload information for the first node, the system information describing the attributes of the first node and the performance data incorporated into the executable file.
8. A computer program product for incorporating performance data into an executable file for an application, comprising:
a non-transitory computer-readable medium having computer readable program code embodied therewith, the computer readable program code comprising:
computer readable program code to monitor performance of the executable file for the application while the executable file is executing on a node;
computer readable program code to determine the performance data of the application based on the monitored performance and one or more system characteristics of the node
computer readable program code to incorporate the performance data into the executable file for the application for subsequent retrieval from the executable file, further comprising:
storing the performance data in a plurality of global variables in a source code for the application; and
compiling the source code including the performance data stored in the plurality of global variables to create the executable file for the application, such that the performance data can subsequently be retrieved from the executable file;

computer readable program code to deploy the executable file containing the incorporated performance data for the application to a first node for execution;
computer readable program code to retrieve the performance data from the executable file for use in managing the execution of the executable file; and
computer readable program code to perform a remedial action for the deployed application, upon determining that a potential workload overflow problem exists for the deployed application based on system information describing attributes of the first node and the retrieved performance data.
9. The computer program product of claim 8, wherein the application is a processing element in a stream computing application, and the computer readable program code further comprising:
computer readable program code to retrieve system information for each of a plurality of nodes;
computer readable program code to select one of the plurality of nodes to deploy the processing element based on the retrieved system information and the performance data incorporated into the executable file of the processing element; and
computer readable program code to deploy the processing element for execution on the selected node of the plurality of nodes.
10. The computer program product of claim 9, wherein the processing element is deployed alongside a plurality of other processing elements, and the computer readable program code further comprising:
computer readable program code to establish an operator graph of the plurality of other processing elements and the deployed processing element, the operator graph defining at least one execution path and wherein at least one of the processing elements of the operator graph is configured to receive data from at least one upstream processing element and transmit data to at least one downstream processing element.
11. The computer program product of claim 8, wherein the performance data includes at least one of: a processor type, a number of processors, an amount of memory, a type of memory, a type of storage, one or more network connectivity characteristics, and a measure of system workload.
12. The computer program product of claim 8, the computer readable program code further comprising:
computer readable program code to determine a number of instances of the application that should be created, based on system information for systems on which the instances of the application will be executed and further based on the performance data; and
computer readable program code to create the determined number of instances of the application on the systems, such that load can be balanced between the created instances of the application.
13. The computer program product of claim 8, wherein performing the remedial action includes at least one of:
(i) spawning a second instance of the application on a second node and discarding the deployed executable file on the first node,
(ii) migrating the deployed executable file on the first node to a second node,
(iii) modifying an operator graph to reduce a workload of the deployed executable file, and
(iv) modifying one or more operations performed by the deployed executable file.
14. The computer program product of claim 8, the computer readable program code further comprising:
computer readable program code to generate a status notification for the deployed executable file, the status notification indicating a current amount of workload for the executable file and a maximum amount of workload for the executable file, based on current workload information for the first node, the system information describing the attributes of the first node and the performance data incorporated into the executable file.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.

1. A power transmission control device included in a power transmission device in a contactless power transmission system that transmits power from the power transmission device to a power receiving device by electromagnetically coupling a primary coil to a secondary coil to supply the power to a load of the power receiving device, the power transmission control device comprising: a controller controlling the power transmission control device; a host interface communicating with a power transmission-side host; and a register section accessible from the power transmission-side host via the host interface, the controller shifting into a communication mode that executes communication between the power transmission-side host and a power receiving-side host, when the power transmission-side host writes, via the host interface, a communication request command that requests the communication between the hosts to the register section, as well as the controller transmitting the communication request command to the power receiving device, and wherein the register section including a command register in which a command issued by the power transmission-side host is written and a data register that buffers data; and the controller transmitting, to the power receiving device, an OUT transmission command that requests data transmission from the power transmission-side host to the power receiving-side host when the OUT transmission command is written in the command register; and then, the controller transmitting a data transmission command that directs the data transmission and data to the power receiving device when the data transmission command is written in the command register and the data is written in the data register.
2. The power transmission control device according to claim 1, the controller receiving a communication request by the communication request command after completion of an authentication processing between the power transmission device and the power receiving device and a start of normal power transmission.
3. The power transmission control device according to claim 1, the register section including a command register in which a command issued by the power transmission-side host is written and a data register that buffers data; and the controller transmitting, to the power receiving device, an OUT transmission command that requests data transmission from the power transmission-side host to the power receiving-side host when the OUT transmission command is written in the command register; and then, the controller transmitting a data transmission command that directs the data transmission and data to the power receiving device when the data transmission command is written in the command register and the data is written in the data register.
4. The power transmission control device according to claim 1, the controller setting at least one of a transmission condition for contactless power transmission and a communication condition between the power transmission device and the power receiving device to a condition for the communication mode that is different from a condition for normal power transmission, when the controller shifts into the communication mode.
5. The power transmission control device according to claim 4, the controller switching a driving frequency or a driving voltage of the primary coil to a driving frequency or a driving voltage of the coil for the communication mode, when shifting into the communication mode.
6. The power transmission control device according to claim 1, the register section including a status register having a bit that allows the power transmission-side host to confirm a power transmission state of contactless power transmission.
7. The power transmission control device according to claim 6, the load including a battery, and the status register having a bit that allows the power transmission-side host to confirm a charge state of the battery.
8. The power transmission control device according to claim 1, the register section including an interruption register having a bit that notifies reception of a command issued by the power receiving-side host to the power transmission-side host upon reception of the command.
9. The power transmission control device according to claim 8, the load including a battery, and the interruption register having a bit that notifies a start of charging of the battery to the power transmission-side host.
10. The power transmission control device according to claim 1, the controller shifting into the communication mode upon reception of an interruption command for a communication request issued by the power receiving-side host.
11. A power transmission device including the power transmission control device of claim 1 and a power transmission section that generates an alternating-current voltage to supply to the primary coil.
12. An electronic apparatus including the power transmission device of claim 11.
13. The power transmission control device according to claim 1, the controller issuing a normal power transmission start command after completion of the communication mode.
14. A power transmission control device included in a power transmission device in a contactless power transmission system that transmits power from the power transmission device to a power receiving device by electromagnetically coupling a primary coil to a secondary coil to supply the power to a load of the power receiving device, the power transmission control device comprising: a controller controlling the power transmission control device; a host interface communicating with a power transmission-side host; and a register section accessible from the power transmission-side host via the host interface, the controller setting at least one of a transmission condition for contactless power transmission and a communication condition between the power transmission device and the power receiving device to a condition for a communication mode that is different from a condition for normal power transmission, when shifting into the communication mode that executes communication between the power transmission-side host and the power receiving-side host, and wherein the register section including a command register in which a command issued by the power transmission-side host is written and a data register that buffers data; and the controller transmitting, to the power receiving device, an OUT transmission command that requests data transmission from the power transmission-side host to the power receiving-side host when the OUT transmission command is written in the command register; and then, the controller transmitting a data transmission command that directs the data transmission and data to the power receiving device when the data transmission command is written in the command register and the data is written in the data register.
15. The power transmission control device according to claim 14, the controller issuing a normal power transmission start command after completion of the communication mode.
16. A power receiving control device included in a power receiving device in a contactless power transmission system that transmits power from a power transmission device to the power receiving device by electromagnetically coupling a primary coil to a secondary coil to supply the power to a load of the power receiving device, the power receiving control device comprising: a controller controlling the power receiving control device; a host interface communicating with a power receiving-side host; and a register section accessible from the power receiving-side host via the host interface, the controller shifting into a communication mode that executes communication between a power transmission-side host and the power receiving-side host, when receiving a communication request command that requests the communication between the hosts from the power transmission device, and wherein the register section including a command register in which a command issued by the power receiving-side host is written, and the controller shifting into the communication mode when the power receiving-side host writes an interruption command for a communication request to the power transmission-side host in the command register.
17. The power receiving control device according to claim 16, the controller receiving a communication request by the communication request command after completion of an authentication processing between the power transmission device and the power receiving device and a start of normal power transmission.
18. The power receiving control device according to claim 16, the load including a battery, and the register section including a status register having a bit that allows the power receiving-side host to confirm a charge state of the battery.
19. The power receiving control device according to claim 16, the register section including an interruption register having a bit that notifies reception of a command issued by the power transmission-side host to the power receiving-side host upon reception of the command.
20. A power receiving device including the power receiving control device of claim 16 and a power receiving section that converts an induced voltage of the secondary coil to a direct-current voltage.
21. An electronic apparatus including the power receiving device of claim 20 and a load that receives power from the power receiving device.
22. The power receiving control device according to claim 16, the controller supplying the power to the load when receiving a normal power transmission start command after completion of the communication mode.