All The Claims

1. An isolated, living eukaryotic cell comprising at least one intracellular magnetotactic bacterium capable of being transferred to daughter cells of the eukaryotic cell through at least three cell divisions of the eukaryotic cell, wherein the isolated, living eukaryotic cell is a mammalian cell.
2. The isolated, living eukaryotic cell of claim 1, wherein the mammalian cell is a human cell.
3. The isolated, living eukaryotic cell of claim 2, wherein the human cell is a stem cell.
4. The isolated, living eukaryotic cell of claim 3, wherein the stem cell is selected from the group consisting of an embryonic stem cell, an inducible pluripotent stem cell, a mesenchymal stem cell, and an adult stem cell.
5. The isolated, living eukaryotic cell of claim 4, wherein the stem cell is an inducible pluripotent stem cell.
6. The isolated, living eukaryotic cell of claim 4, wherein the stem cell is a mesenchymal stem cell.
7. The isolated, living eukaryotic cell of claim 2, wherein the human cell is a cancer cell.
8. The isolated, living eukaryotic cell of claim 7, wherein the cancer cell is selected from the group consisting of a leukemia cell and a lymphoma cell.
9. The isolated, living eukaryotic cell of claim 7, wherein the cancer cell is a solid tumor cell.
10. The isolated, living eukaryotic cell of claim 9, wherein the solid tumor cell is selected from the group consisting of a colon tumor cell, a CNS tumor cell, a renal tumor cell, a melanoma tumor cell, an ovarian tumor cell, a breast tumor cell, and a prostate tumor cell.
11. The isolated, living eukaryotic cell of claim 7, wherein the cancer cell has been given a drug treatment.
12. The isolated, living eukaryotic cell of claim 1, wherein the mammalian cell is a murine cell.
13. The isolated, living eukaryotic cell of claim 12, where in the murine cell is a stem cell.
14. The isolated, living eukaryotic cell of claim 13, wherein the stem cell is selected from the group consisting of an embryonic stem cell, an inducible pluripotent stem cell, a mesenchymal stem cell, and an adult stem cell.
15. The isolated, living eukaryotic cell of claim 14, wherein the stem cell is an inducible pluripotent stem cell.
16. The isolated, living eukaryotic cell of claim 14, wherein the stem cell is a mesenchymal stem cell.
17. The isolated, living eukaryotic cell of claim 14, wherein the stem cell is an embryonic stem cell.
18. The isolated, living eukaryotic cell of claim 12, wherein the murine cell is a cancer cell.
19. The isolated, living eukaryotic cell of claim 18, wherein the cancer cell is selected from the group consisting of a leukemia cell and a lymphoma cell.
20. The isolated, living eukaryotic cell of claim 18, wherein the cancer cell is a solid tumor cell.
21. The isolated, living eukaryotic cell of claim 20, wherein the solid tumor cell is selected from the group consisting of a colon tumor cell, a CNS tumor cell, a renal tumor cell, a melanoma tumor cell, an ovarian tumor cell, a breast tumor cell, and a prostate tumor cell.
22. The isolated, living eukaryotic cell of claim 18, wherein the cancer cell has been given a drug treatment.

The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.

1. Power supply unit comprising a switched-mode power supply having
a transformer with a primary winding and a number of secondary windings,
a switching transistor coupled to the primary winding and
a control circuit by means of which an output voltage from a first secondary winding is stabilized on the flyback converter principle,
a second secondary winding being connected in a forward mode, which is followed by a switching regulator wherein switching regulator is a step-down converter,
that the second secondary winding produces a rectified output voltage via a rectifier means, preferably a diode, the value of which output voltage during normal operation is in a range from 30 to 50 volts, and that the step-down converter produces a stabilized output voltage of less than or equal to 16 V, in order to bridge mains voltage dips.
2. Power supply unit according to claim 1, wherein the turns ratio of the second secondary winding with respect to the primary winding is chosen such that the output voltage from the second secondary winding produces a rectified voltage in a range from 30 to 50 volts.
3. Power supply unit according to claim 1, wherein the output voltage which is produced by the switched-mode regulator is used to operate a low-noise converter.
4. Power supply unit according to claim 3, wherein the switching regulator has a control circuit for producing different output voltages for operation of the low-noise converter.

What is claimed is:

1. A method for forming an intermetal dielectric layer, comprising:
providing a substrate;
forming a plurality of metal conductive lines on the substrate, wherein a tied conductive line region and a loose conductive line region consist of the plurality of metal conductive lines,
forming an intermetal dielectric layer on the substrate;
forming a protection layer on the intermetal dielectric layer wherein the protection layer is thinner than the intermetal dielectric layer;
forming a cap layer on the protection layer; and
performing a planarization process.
2. The method for forming the intermetal dielectric layer according to claim 1 wherein the intermetal dielectric layer comprises fluorinated silicon glass.
3. The method for forming the intermetal dielectric layer according to claim 1. wherein the formation of the intermetal dielectric layer comprises biased-clamped high density plasma chemical vapor deposition.
4. The method for forming the intermetal dielectric layer according to claim 3. wherein the biased-clamped high density plasma chemical vapor deposition is performed under a bias and helium cooling is employed.
5. The method for forming the intermetal dielectric layer according to claim 1, wherein the protection layer comprises fluorinated silicon glass.
6. The method for forming the intermetal dielectric layer according to claim 1, wherein the formation of the protection dielectric layer comprises unbiased-unclamped high density plasma chemical vapor deposition.
7. The method for forming the intermetal dielectric layer according to claim 6, wherein the unbiased-unclamped high density plasma chemical vapor deposition is performed without a bias and without helium cooling.
8. The method for forming the intermetal dielectric layer according to claim 1, wherein the protection layer is used as a stop layer.
9. The method for forming the intermetal dielectric layer according to claim 1, wherein the cap layer comprises an oxide layer.
10. The method for forming the intermetal dielectric layer according to claim 1, wherein the formation of the cap layer comprises plasma enhanced chemical vapor deposition.
11. The method for forming the intermetal dielectric layer according to claim 1, wherein before forming the intermetal dielectric layer, the process further comprises forming a undoped silicon glass layer.
12. The method for forming the intermetal dielectric layer according to claim l wherein the planarization process comprises a chemical mechanical polishing process.
13. A method for forming an intermetal dielectric layer, comprising:
providing a substrate;
forming a plurality of metal conductive lines on the substrate;
forming a first dielectric layer on the substrate;
forming a second dielectric layer on the first dielectric layer;
forming a cap layer on the second dielectric layer; and
performing a planarization process.
14. The method for forming the intermetal dielectric layer according to claim 13, wherein the formation of the intermetal dielectric layer comprises biased-clamped high density plasma chemical vapor deposition.
15. The method for forming the intermetal dielectric layer according to claim 14, wherein the biased-clamped high density plasma chemical vapor deposition is performed under a bias and helium cooling is employed.
16. The method for forming the intermetal dielectric layer according to claim 13 wherein the formation of the protection dielectric layer comprises unbiased-unclamped high density plasma chemical vapor deposition.
17. The method for forming the intermetal dielectric layer according to claim 16, wherein the unbiased-unclamped high density plasma chemical vapor deposition is performed without a bias and without helium cooling.
18. The method for forming the intermetal dielectric layer according to claim 13, wherein the cap layer comprises an oxide layer.
19. The method for forming the intermetal dielectric layer according to claim 13 wherein the second dielectric layer is used as a stop layer.
20. The method for forming the intermetal dielectric layer according to claim 13, wherein before forming the first dielectric layer, the process further comprises forming an undoped silicon glass layer.
21. A method for forming an intermetal dielectric layer, wherein the method applies to a substrate and a plurality of metal conductive lines is formed on the substrate, the method comprising:
forming a dielectric layer on the substrate;
forming a protection layer on the dielectric layer;
forming a cap layer on the protection layer; and
performing a planarization process.
22. The method for forming the intermetal dielectric layer according to claim 21, wherein the formation of the intermetal dielectric layer comprises biased-clamped high density plasma chemical vapor deposition.
23. The method for forming the intermetal dielectric layer according to claim 22, wherein the biased-clamped high density plasma chemical vapor deposition is performed under a bias and helium cooling is employed.
24. The method for forming the intermetal dielectric layer according to claim 21, wherein the protection layer comprises fluorinated silicon glass.
25. The method for forming the intermetal dielectric layer according to claim 21, wherein the formation of the protection dielectric layer comprises unbiased-unclamped high density plasma chemical vapor deposition.
26. The method for forming the intermetal dielectric layer according to claim 25, wherein the unbiased-unclamped high density plasma chemical vapor deposition is performed without a bias and without helium cooling.
27. The method for forming the intermetal dielectric layer according to claim 21, wherein the cap layer comprises an oxide layer.
28. The method for forming the intermetal dielectric layer according to claim 21, wherein the second dielectric layer is used as a stop layer.

The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.

1-6. (canceled)
7. A compound of the formula
wherein
X1 is heteroarylthio;
Q is selected from the group consisting of
where Ra and Rb are each independently hydrogen or alkyl; or Ra and Rb are taken together with the attached carbon atom to form a carbocyclic ring; m and n are each independently an integer from 1 to about 4; and * represents the point of attachment; and
X2 is aryloxy.
8. The compound of claim 7, wherein X1 is optionally substituted 2-pyridinylthio or optionally substituted 4-pyridinylthio.
9. The compound of claim 7, wherein X1 is substituted by at least one electron withdrawing substituent selected from the group consisting of cyano, nitro, alkylsulfonyl, arylsulfonyl, halo, haloalkyl, acyl, and carboxyl.
10. The compound of claim 7, wherein X1 is substituted by a nitro group.
11. The compound of claim 7, wherein X1 is selected from the group consisting of
where * represents the point of attachment.
12. The compound of claim 7, wherein X1 is
where * represents the point of attachment.
13. The compound of claim 7, wherein X2 is optionally substituted phenyl.
14. The compound of claim 7, wherein X2 is substituted by at least one electron withdrawing substituent selected from the group consisting of cyano, nitro, alkylsulfonyl, arylsulfonyl, halo, haloalkyl, acyl, and carboxyl.
15. The compound of claim 7, wherein X2 is substituted by a nitro group.
16. The compound of claim 7, wherein X2 is selected from the group consisting of
where * represents the point of attachment.
17. The compound of claim 7, wherein X2 is
where * represents the point of attachment.
18. The compound of claim 7, wherein n is 1.
19. The compound of claim 7, wherein Ra and Rb are each independently hydrogen or lower alkyl.
20. The compound of claim 7, wherein Ra and Rb are each hydrogen.
21. The compound of claim 7, wherein Ra and Rb are taken together with the attached carbon atom to form a carbocyclic ring.
22. The compound of claim 7, wherein Ra and Rb are taken together with the attached carbon atom to form cyclopropyl.
23. The compound of claim 7, wherein Q is
where Ra and Rb are each independently hydrogen or alkyl; or Ra and Rb are taken together with the attached carbon atom to form a carbocyclic ring; n is an integer from 1 to about 4; and * represents the point of attachment.
24. The compound of claim 7, wherein Q is
where m is an integer from 1 to about 4 and * represents the point of attachment.
25. The compound of claim 7, wherein the compound is of the formula
26. A radical of the formula
wherein
Ra and Rb are each independently hydrogen or alkyl; or Ra and Rb are taken together with the attached carbon atom to form a carbocyclic ring;
Y is selected from the group consisting of hydrogen, nitro, cyano, halo, alkylsulfonyl, and a carboxylic acid derivative; and
* represents the point of attachment.