All The Claims

What is claimed is:

1. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
crystallizing the semiconductor film by a heat treatment;
etching the crystallized semiconductor film into semiconductor layers;
doping a first impurity element into the semiconductor layers;
forming a mask over a portion of the semiconductor layers;
doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed; and
performing a rapid thermal annealing to the semiconductor layers after the second doping step.
2. A method of manufacturing a display device according to claim 1, wherein the substrate comprises a glass substrate.
3. A method of manufacturing a display device according to claim 1, wherein the mask comprises a photoresist.
4. A method of manufacturing a display device according to claim 1, wherein the first impurity element comprises phosphorus, and the second impurity element comprises boron.
5. A method of manufacturing a display device according to claim 1, wherein a does amount of the second impurity element is larger than that of the first impurity element.
6. A method of manufacturing a display device according to claim 1, wherein the rapid thermal annealing is conducted by irradiating the semiconductor layers with an infrared light.
7. A method of manufacturing a display device according to claim 1, wherein the rapid thermal annealing is conducted for several seconds to several minutes.
8. A method of manufacturing a display device according to claim 1, wherein the display device is a liquid crystal display device.
9. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
crystallizing the semiconductor film by a heat treatment;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS;
doping a first impurity element into the semiconductor layers;
forming a mask over a portion of the semiconductor layers; and
doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed.
10. A method of manufacturing a display device according to claim 9, wherein the substrate comprises a glass substrate.
11. A method of manufacturing a display device according to claim 9, wherein the mask comprises a photoresist.
12. A method of manufacturing a display device according to claim 9, wherein the first impurity element comprises phosphorus, and the second impurity element comprises boron.
13. A method of manufacturing a display device according to claim 9, wherein a does amount of the second impurity element is larger than that of the first impurity element.
14. A method of manufacturing a display device according to claim 9, wherein the gate insulating film is formed by plasma CVD.
15. A method of manufacturing a display device according to claim 9, wherein the display device is a liquid crystal display device.
16. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
crystallizing the semiconductor film by a heat treatment;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS; and
performing a rapid thermal annealing to the semiconductor layers after forming the gate insulating film.
17. A method of manufacturing a display device according to claim 16, wherein the substrate comprises a glass substrate.
18. A method of manufacturing a display device according to claim 16, wherein the rapid thermal annealing is conducted by irradiating the semiconductor layers with an infrared light.
19. A method of manufacturing a display device according to claim 16, wherein the rapid thermal annealing is conducted for several seconds to several minutes.
20. A method of manufacturing a display device according to claim 16, wherein the gate insulating film is formed by plasma CVD.
21. A method of manufacturing a display device according to claim 16, wherein the display device is a liquid crystal display device.
22. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
crystallizing the semiconductor film by a heat treatment;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS; and
irradiating the semiconductor layers with a laser light after forming the gate insulating film.
23. A method of manufacturing a display device according to claim 22, wherein the substrate comprises a glass substrate.
24. A method of manufacturing a display device according to claim 22, wherein the laser comprises an excimer laser.
25. A method of manufacturing a display device according to claim 22, wherein the gate insulating film is formed by plasma CVD.
26. A method of manufacturing a display device according to claim 22, wherein the display device is a liquid crystal display device.
27. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
etching the crystallized semiconductor film into semiconductor layers;
doping a first impurity element into the semiconductor layers;
forming a mask over a portion of the semiconductor layers;
doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed; and
performing a rapid thermal annealing to the semiconductor layers after the second doping step.
28. A method of manufacturing a display device according to claim 27, wherein the substrate comprises a glass substrate.
29. A method of manufacturing a display device according to claim 27, wherein the mask comprises a photoresist.
30. A method of manufacturing a display device according to claim 27, wherein the first impurity element comprises phosphorus, and the second impurity element comprises boron.
31. A method of manufacturing a display device according to claim 27, wherein a does amount of the second impurity element is larger than that of the first impurity element.
32. A method of manufacturing a display device according to claim 27, wherein the rapid thermal annealing is conducted by irradiating the semiconductor layers with an infrared light.
33. A method of manufacturing a display device according to claim 27, wherein the rapid thermal annealing is conducted for several seconds to several minutes.
34. A method of manufacturing a display device according to claim 27, wherein the laser comprises an excimer laser.
35. A method of manufacturing a display device according to claim 27, wherein the display device is a liquid crystal display device.
36. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS;
doping a first impurity element into the semiconductor layers;
forming a mask over a portion of the semiconductor layers; and
doping a second impurity element into at least one of the semiconductor layers over which the mask is not formed.
37. A method of manufacturing a display device according to claim 36, wherein the substrate comprises a glass substrate.
38. A method of manufacturing a display device according to claim 36, wherein the mask comprises a photoresist.
39. A method of manufacturing a display device according to claim 36, wherein the first impurity element comprises phosphorus, and the second impurity element comprises boron.
40. A method of manufacturing a display device according to claim 36, wherein a does amount of the second impurity element is larger than that of the first impurity element.
41. A method of manufacturing a display device according to claim 36, wherein the laser comprises an excimer laser.
42. A method of manufacturing a display device according to claim 36, wherein the gate insulating film is formed by plasma CVD.
43. A method of manufacturing a display device according to claim 36, wherein the display device is a liquid crystal display device.
44. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS; and
performing a rapid thermal annealing to the semiconductor layers after forming the gate insulating film.
45. A method of manufacturing a display device according to claim 44, wherein the substrate comprises a glass substrate.
46. A method of manufacturing a display device according to claim 44, wherein the rapid thermal annealing is conducted by irradiating the semiconductor layers with an infrared light.
47. A method of manufacturing a display device according to claim 44, wherein the rapid thermal annealing is conducted for several seconds to several minutes.
48. A method of manufacturing a display device according to claim 44, wherein the laser comprises an excimer laser.
49. A method of manufacturing a display device according to claim 44, wherein the gate insulating film is formed by plasma CVD.
50. A method of manufacturing a display device according to claim 44, wherein the display device is a liquid crystal display device.
51. A method of manufacturing a display device comprising:
forming a semiconductor film over a substrate;
irradiating the semiconductor film with a laser light to crystallize the semiconductor film;
etching the crystallized semiconductor film into semiconductor layers;
forming a gate insulating film on the semiconductor layers by decomposing TEOS; and
irradiating the semiconductor layers with a laser light after forming the gate insulating film.
52. A method of manufacturing a display device according to claim 51, wherein the substrate comprises a glass substrate.
53. A method of manufacturing a display device according to claim 51, wherein the laser comprises an excimer laser.
54. A method of manufacturing a display device according to claim 51, wherein the gate insulating film is formed by plasma CVD.
55. A method of manufacturing a display device according to claim 51, wherein the display device is a liquid crystal display device.

The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.

1. A pixel structure, formed on a substrate and electrically connected with a scan line and a data line, the pixel structure comprising:
a semiconductor pattern, comprising:
at least two channel areas, located below the scan line, each of the two channel areas is a region of the semiconductor pattern overlapping with the scan line, and the two channel areas having different aspect ratios;
at least one doping area, connected between the channel areas;
a source area and a drain area; and

a pixel electrode, electrically connected with the drain area, wherein the source area is connected between the data line and one of the two channel areas, and the drain area is connected between the pixel electrode and the other of the two channel areas,
wherein the scan line overlapping with different channel areas has two different widths including a first width and a second width, a length of one of the channel areas is substantially equal to the first width, and a length of the other one of the channel areas is substantially equal to the second width.
2. The pixel structure according to claim 1, wherein the scan line comprises a branch substantially perpendicular to the scan line.
3. The pixel structure according to claim 2, wherein one of the two channel areas is located below and overlapped with the branch, and the length of the channel area below the branch is substantially equal to a width of the branch.
4. The pixel structure according to claim 1, wherein the semiconductor pattern comprises a polysilicon pattern.
5. The pixel structure according to claim 4, wherein the semiconductor pattern further comprises a capacitor electrode electrically connected with the drain area and the pixel electrode, and located below the pixel electrode.
6. The pixel structure according to claim 5, further comprising a common electrode disposed between the capacitor electrode and the pixel electrode.
7. The pixel structure according to claim 1, wherein the doping area is in an L shape or a U shape.
8. The pixel structure according to claim 1, wherein a part of the scan line above the channel area, the source area, and the drain area form a polysilicon thin film transistor (TFT).
9. A pixel structure, formed on a substrate and electrically connected with a scan line and a data line, the pixel structure comprising:
a semiconductor pattern, comprising:
at least two channel areas, located below the scan line, each of the two channel areas is a region of the semiconductor pattern overlapping with the scan line, and the two channel areas having different aspect ratios;
at least one doping area, connected between the channel areas;
a source area and a drain area; and

a pixel electrode, electrically connected with the drain area, wherein the source area is connected between the data line and one of the two channel areas, and the drain area is connected between the pixel electrode and the other of the two channel areas,
wherein the scan line overlapping with different channel areas has two different widths including a first width and a second width, the first width and the second width are substantially perpendicular to an extension direction of the scan line, a length of one of the channel areas is substantially equal to the first width, and a length of the other one of the channel areas is substantially equal to the second width.
10. The pixel structure according to claim 9, wherein the scan line comprises a branch substantially perpendicular to the scan line.
11. The pixel structure according to claim 10, wherein one of the two channel areas is located below and overlapped with the branch, and the length of the channel area below the branch is substantially equal to a width of the branch.
12. The pixel structure according to claim 9, wherein the semiconductor pattern comprises a polysilicon pattern.
13. The pixel structure according to claim 12, wherein the semiconductor pattern further comprises a capacitor electrode electrically connected with the drain area and the pixel electrode, and located below the pixel electrode.
14. The pixel structure according to claim 13, further comprising a common electrode disposed between the capacitor electrode and the pixel electrode.
15. The pixel structure according to claim 9, wherein the doping area is in an L shape or a U shape.
16. The pixel structure according to claim 9, wherein a part of the scan line above the channel area, the source area, and the drain area form a polysilicon thin film transistor (TFT).

1. A printing system comprising:
a print head array comprising a plurality of ink jet print heads for depositing a printing fluid onto a substrate to form images on the substrate; and
a first source which emits UV radiation to polymerize the printing fluid deposited onto the substrate by the plurality of ink jet print heads sufficiently to immobilize, but not cure, said printing fluid;
a mechanism for adjusting an energy level of the radiation emitted by said first source, wherein the fluid is selectively immobilized by said first source to exhibit a desired degree, or lack, of gloss;
wherein the energy level shown in the \u201cPin Energy\u201d column of the following table results in the corresponding exhibited gloss levels in the \u201cGloss at 85 degrees\u201d column of the table:
Gloss at 85 degrees
Pin Energy mWcm2
LED pin
Hg arc pin
5.8
76.2
14
67.3
24
48.3
36
30.7
27

73.8
50

17.2
65

\u20028.9
250

\u2009\u20025.5.
2. The system of claim 1, wherein said first source is positioned proximate to said print head array.
3. The system of claim 1, wherein said first source emits UV radiation to polymerize the printing fluid deposited onto the substrate by the plurality of ink jet print heads to cure said printing fluid.
4. The system of claim 3, said first source comprising an LED array comprising a plurality of lamps, wherein each of said lamps is modulated to a low, controlled, energy level to immobilize said printing fluid on said substrate when said lamp is a trailing lamp relative to an advancing edge of the substrate and wherein each of said lamps is modulated at an increased energy level to cure said printing fluid on said substrate when said lamp becomes a leading lamp relative to said advancing edge of the substrate.
5. The system of claim 1, further comprising:
a second source, positioned away from said print head array along an axis of substrate travel, which emits UV radiation to polymerize the printing fluid deposited onto the substrate by the plurality of ink jet print heads to cure said printing fluid.
6. The system of claim 1, wherein the energy level is adjustable between a low level to set the fluid to exhibit a high degree of gloss and a higher level to set the fluid to exhibit a lower degree of gloss.
7. The system of claim 1, wherein the fluid is an ink.
8. The system of claim 1, wherein said first source comprises one or more UV lamps.
9. The system of claim 1, wherein said first source comprises one or more LEDs.
10. The system of claim 1, said first source comprises one or more Hg arc lamps.
11. The system of claim 1, wherein the print head array comprises a carriage which scans in a direction substantially orthogonal to the direction of movement of the substrate.
12. The system of claim 11, wherein the carriage is constructed to move bidirectionally.
13. The system of claim 12, wherein the first source is moveable relative to the carriage in a direction substantially parallel to the direction of movement of the substrate.
14. The system of claim 1, wherein the first source comprises a pair of lamps mounted to a carriage of the printing system, the carriage being coupled to a rail system so that the carriage moves along the rail system to scan across the substrate.
15. A printing system comprising:
a print head array comprising a plurality of ink jet print heads for depositing a printing fluid onto a substrate to form images on the substrate; and
a source which emits UV radiation to polymerize the printing fluid deposited onto the substrate by the plurality of ink jet print heads;
wherein the fluid is first immobilized and subsequently cured;
wherein the source comprises a first UV source which immobilizes the liquid and a second UV energy source which cures the liquid, the first UV source being positioned adjacent to the print heads and the second UV source being positioned adjacent to a trailing side of the first UV energy source;
wherein an energy level of the radiation emitted by the first source is selectively adjustable to selectively immobilize the fluid with said first source to exhibit a desired degree, or lack, of gloss;
wherein the energy level shown in the \u201cPin Energy\u201d column of the following table results in the corresponding exhibited gloss levels in the \u201cGloss at 85 degrees\u201d column of the table:
Gloss at 85 degrees
Pin Energy mWcm2
LED pin
Hg arc pin
5.8
76.2
14
67.3
24
48.3
36
30.7
27

73.8\u2002
50

17.2\u2002
65

8.9
250

\u20095.5.
16. The system of claim 15, wherein an energy level of the radiation emitted by the first source is adjustable by varying the pulse rate of the first source.
17. The system of claim 15, wherein the fluid is an ink.
18. The system of claim 15, wherein the first source comprises one or more UV lamps.
19. The system of claim 18, wherein the first source comprises one or more LEDs.
20. The system of claim 18, wherein said first source comprises one or more Hg arc lamps.
21. The system of claim 18, wherein the lamps are moveable relative to the carriage.
22. The system of claim 18, wherein an energy level of the radiation emitted by the first source is adjustable between about 5.8 to about 36 mWcm2 to produce a corresponding gloss level of about 76.2 to about 37 at 85 degrees.
23. The system of claim 20, wherein an energy level of the radiation emitted by the first source is adjustable between about 27 to about 250 mWcm2 to produce a corresponding gloss level of about 73.8 to about 5.5 at 85 degrees.
24. The system of claim 15, wherein parameters, in addition to energy level of radiation emitted from the first source, that are selectively adjustable to selectively immobilize the fluid with said first source to exhibit a desired degree, or lack, of gloss comprise any of ink composition, lamp wavelength, interval of lamp illumination, length of lamp array, rate at which energy supplied to one or more lamps is increased, rate at which energy supplied to one or lamps is decreased, and selective operation of one or more lamps.

The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.

1. A light-converting ceramic composite, which is a bulk comprising a solidified body having a texture of at least two or more oxide phases being continuously and three-dimensionally entangled together, with at least one of said oxide phases being a fluorescence-emitting crystal phase, wherein the interface length between said oxide phases per 1 mm2 of a plane in said light-converting ceramic composite is from 150 to 1,500 mm.
2. The light-converting ceramic composite as claimed in claim 1, wherein said interface length is from 200 to 1,500 mmmm2.
3. The light-converting ceramic composite as claimed in claim 2, which contains at least the Y element, the Al element and the Ce element as the composition components.
4. A light-emitting device comprising the light-converting ceramic composite claimed in claim 3 and a light-emitting element.
5. The light-emitting device as claimed in claim 4, wherein said light-converting ceramic composite emits fluorescence having a peak at a wavelength of 530 to 580 nm and said light-emitting element emits light having a peak at a wavelength of 400 to 500 nm.
6. A light-emitting device comprising the light-converting ceramic composite claimed in claim 2 and a light-emitting element.
7. The light-emitting device as claimed in claim 6, wherein said light-converting ceramic composite emits fluorescence having a peak at a wavelength of 530 to 580 nm and said light-emitting element emits light having a peak at a wavelength of 400 to 500 nm.
8. The light-converting ceramic composite as claimed in claim 1, which contains at least the Y element, the Al element and the Ce element as the composition components.
9. A light-emitting device comprising the light-converting ceramic composite claimed in claim 8 and a light-emitting element.
10. The light-emitting device as claimed in claim 9, wherein said light-converting ceramic composite emits fluorescence having a peak at a wavelength of 530 to 580 nm and said light-emitting element emits light having a peak at a wavelength of 400 to 500 nm.
11. A light-emitting device comprising the light-converting ceramic composite claimed in claim 1 and a light-emitting element.
12. The light-emitting device as claimed in claim 11, wherein said light-converting ceramic composite emits fluorescence having a peak at a wavelength of 530 to 580 nm and said light-emitting element emits light having a peak at a wavelength of 400 to 500 nm.