1. A thin film transistor, comprising:
a gate electrode, formed on a substrate, wherein the gate electrode has at least one notch;
a gate dielectric layer, formed over the substrate, covering the gate electrode;
a source region, formed on the gate dielectric layer, wherein the source region is located over a region outside the notch of the gate electrode and the source region overlaps a portion of the gate electrode;
a drain region, formed over the gate dielectric layer exposed by the source region, wherein the drain region is over the notch of the gate electrode and the drain region overlaps a portion of the gate electrode at the edge of the notch; and
a channel layer formed on the gate dielectric layer and located over the gate electrode and between the source region and drain region.
2. The thin film transistor of claim 1, further comprising an etch stop layer formed between the channel layer and the source and drain regions.
3. The thin film transistor of claim 1, further comprising an ohmic-contact layer formed between the channel layer and the source and drain regions.
4. The thin film transistor of claim 1, wherein the source region overlaps the gate electrode.
5. The thin film transistor of claim 1, wherein the source region comprises two strip regions, each of the two strip regions adjacent to each longitude of the drain region.
6. The thin film transistor of claim 1, wherein the shape of the notch of the gate electrode is a triangle, a quadrilateral or a non-regular shape.
7. A pixel structure, comprising:
a scan line, formed on a substrate;
a gate electrode, formed on the substrate and electrically connected to the scan line, wherein the gate electrode has at least one notch;
a gate dielectric layer, formed over the substrate, covering the scan line and the gate electrode;
a channel layer, formed over the gate dielectric layer and located over the gate electrode;
a source region, formed on the channel layer, wherein the source region is over a region outside the notch of the gate electrode and the source region overlaps a portion of the gate electrode;
a drain region, formed over the channel layer exposed by the source region, wherein the drain region is over the notch of the gate electrode and the drain region overlaps a portion of the gate electrode at the edge of the notch;
a data line, formed on the gate dielectric layer, wherein the data line is electrically connected to the source region;
a protection layer, formed over the substrate, covering the gate electrode, the gate dielectric layer, the channel layer, the source region, the drain region, the scan line and the data line;
a contact, formed within the protection layer and electrically connected to the drain region; and
a pixel electrode, formed on the protection layer, the pixel electrode electrically connected to the drain region through the contact.
8. The pixel structure of claim 7, further comprising an etch stop layer formed between the channel layer and the source and drain regions.
9. The pixel structure of claim 7, further comprising an ohmic-contact layer formed between the channel layer and the source and drain regions.
10. The pixel structure of claim 7, wherein the source region overlaps the gate electrode.
11. The pixel structure of claim 7, wherein the source region comprises two strip regions, each of the two strip regions adjacent to each longitude of the drain region.
12. The pixel structure of claim 11, wherein the source region further extends over the gate dielectric layer formed on the scan line.
13. The pixel structure of claim 7, wherein the shape of the notch of the gate electrode is a triangle, a quadrilateral or a non-regular shape.
14. A thin film transistor, comprising:
a scan line, formed on a substrate;
a gate electrode, formed on the substrate and electrically connected to the scan line, wherein the gate electrode has at least one notch;
a gate dielectric layer, formed over the substrate, covering the scan line and the gate electrode;
a drain region, formed over the notch of the gate electrode and the drain region overlapping a portion of the gate electrode at the edge of the notch and a portion of scan line;
a trident source region, formed on the gate dielectric layer, wherein the trident source region comprises:
two first projecting portions formed on the gate dielectric layer, wherein the two first projecting portions are over a region outside the notch of the gate electrode and the two first projecting portions overlap a portion of the gate electrode;
a second projecting portion, formed over the scan line between the two first projecting portions, wherein the second projecting portion is shorter than the two first projecting portions; and
a connection portion, connecting the second projecting portion and the two first projecting portions; and
a channel layer, formed between the gate electrode and the drain and trident source regions.
15. The thin film transistor of claim 14, further comprising an etch stop layer formed between the channel layer and the drain and trident regions.
16. The thin film transistor of claim 14, further comprising an ohmic-contact layer formed between the channel layer and the drain and trident source regions.
17. The thin film transistor of claim 14, wherein the connection portion of the trident source region extends over the scan line.
18. The thin film transistor of claim 14, wherein the shape of the notch of the gate electrode is a triangle, a quadrilateral or a non-regular shape.
19. The thin film transistor of claim 14, further comprising a data line formed on the gate dielectric layer, the data line electrically connected to the trident source region.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of modulating the human meridian system using a small bar magnet having a length of 3 cm or less and a coercivity of 1000 gauss or greater,
wherein the small bar magnet is attached to the skin corresponding to at least two acupuncture points on the meridian line of the human body,
wherein a first small bar magnet is attached to the skin corresponding to a first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method), or attached to the skin corresponding to the first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method), and
a second small bar magnet is attached to the skin corresponding to a second acupuncture point such that the direction of flow of a magnetic force of the second small bar magnet is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method) when the first small magnet bar is attached to the skin corresponding to a first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method), or attached to the skin corresponding to a second acupuncture point such that the direction of flow of a magnetic force of the second small bar magnet is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method) when the first small magnet bar is attached to the skin corresponding to the first acupuncture point such that the direction of flow of a magnetic force of the first small magnet is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method).
2. The method of claim 1, wherein the small bar magnet has a length of 1 cm or less and a thickness of 0.5 mm or less.
3. The method of claim 1, wherein the small bar magnet has a length of 5 mm or less and a thickness of 0.3 mm or less.
4. The method of claim 1, wherein the small bar magnet is attached to parts of pain in multiple lines in the same direction with or different directions from each other.
5. A method of modulating the human meridian system using a small bar magnet having a length of 3 cm or less and a coercivity of 1000 gauss or greater,
wherein the small bar magnet is attached to the skin corresponding to at least two acupuncture points on the meridian line of the human body,
wherein a first small bar magnet unit is attached to the skin corresponding to a first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet unit is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method), or attached to the skin corresponding to the first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet unit is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method), and
a second small bar magnet unit is attached to the skin corresponding to a second acupuncture point such that the direction of flow of a magnetic force of the second small bar magnet unit is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method) when the first small magnet bar is attached to the skin corresponding to a first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet unit is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method), or attached to the skin corresponding to a second acupuncture point such that the direction of flow of a magnetic force of the second small bar magnet unit is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method) when the first small magnet bar is attached to the skin corresponding to the first acupuncture point such that the direction of flow of a magnetic force of the first small magnet is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method),
wherein the first small bar magnet unit comprises a pair of small bar magnets which are positioned in the vicinity of the first acupuncture point and spaced apart from each other by a distance of 1 cm, and
the second small bar magnet unit comprises a pair of small bar magnets which are positioned in the vicinity of the second acupuncture point and spaced apart from each other by a distance of 1 cm.
6. The method of claim 5, wherein the small bar magnet has a length of 1 cm or less and a thickness of 0.5 mm or less.
7. The method of claim 5, wherein the small bar magnet has a length of 5 mm or less and a thickness of 0.3 mm or less.
8. The method of claim 5, wherein the small bar magnet is attached to parts of pain in multiple lines in the same direction with or different directions from each other.
9. A method of modulating the human meridian system using a small bar magnet having a length of 3 cm or less and a coercivity of 1000 gauss or greater,
wherein the small bar magnet is implanted into the skin corresponding to at least two acupuncture points on the meridian line of the human body,
wherein a first small bar magnet is implanted into the skin corresponding to a first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method), or implanted into the skin corresponding to the first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method), and
a second small bar magnet is implanted into the skin corresponding to a second acupuncture point such that the direction of flow of a magnetic force of the second small bar magnet is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method) when the first small magnet bar is implanted into the skin corresponding to a first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method), or implanted into the skin corresponding to a second acupuncture point such that the direction of flow of a magnetic force of the second small bar magnet is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method) when the first small magnet bar is implanted into the skin corresponding to the first acupuncture point such that the direction of flow of a magnetic force of the first small magnet is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method).
10. The method of claim 9, wherein the small bar magnet has a length of 1 cm or less and a thickness of 0.5 mm or less.
11. The method of claim 9, wherein the small bar magnet has a length of 5 mm or less and a thickness of 0.3 mm or less.
12. The method of claim 9, wherein the small bar magnet is implanted into parts of pain in multiple lines in the same direction with or different directions from each other.
13. A method of modulating the human meridian system using a small bar magnet having a length of 3 cm or less and a coercivity of 1000 gauss or greater,
wherein the small bar magnet is implanted into the skin corresponding to at least two acupuncture points on the meridian line of the human body,
wherein a first small bar magnet unit is implanted into the skin corresponding to a first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet unit is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method), or implanted into the skin corresponding to the first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet unit is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method), and
a second small bar magnet unit is implanted into the skin corresponding to a second acupuncture point such that the direction of flow of a magnetic force of the second small bar magnet unit is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method) when the first small magnet bar is implanted into the skin corresponding to a first acupuncture point such that the direction of flow of a magnetic force of the first small bar magnet unit is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method), or implanted into the skin corresponding to a second acupuncture point such that the direction of flow of a magnetic force of the second small bar magnet unit is the same as the direction of flow of the meridian system to promote the meridian system (Bo-method) when the first small magnet bar is implanted into the skin corresponding to the first acupuncture point such that the direction of flow of a magnetic force of the first small magnet is opposite to the direction of the meridian system to inhibit the meridian system (Sa-method),
wherein the first small bar magnet unit comprises a pair of small bar magnets which are positioned in the vicinity of the first acupuncture point and spaced apart from each other by a distance of 1 cm, and
the second small bar magnet unit comprises a pair of small bar magnets which are positioned in the vicinity of the second acupuncture point and spaced apart from each other by a distance of 1 cm.
14. The method of claim 13, wherein the small bar magnet has a length of 1 cm or less and a thickness of 0.5 mm or less.
15. The method of claim 13, wherein the small bar magnet has a length of 5 mm or less and a thickness of 0.3 mm or less.
16. The method of claim 13, wherein the small bar magnet is implanted into parts of pain in multiple lines in the same direction with or different directions from each other.