1. A method of generating an optical spike at an arbitrarily selected location within an arbitrary optical link, the method comprising steps of:
deriving a spike signal having a plurality of components, an initial phase relationship between the components being selected such that the components will be phase aligned at the selected location; and
launching the spike signal into a transmitter end of the optical link.
2. A method as claimed in claim 1, wherein the initial phase relationship between the components is selected to offset dispersion induced phase changes between the transmitter end of the link and the selected location.
3. A method as claimed in claim 1, wherein the spike signal is designed to form an optical spike at two or more selected locations within the optical link.
4. A method as claimed in claim 3, wherein the two or more selected locations within the optical link comprises a receiver end of the link and at least one other location within the link.
5. A method as claimed in claim 1, wherein the spike signal is designed to form an optical spike at exactly one selected location within the optical link.
6. A method as claimed in claim 5, wherein the step of launching the spike signal comprises steps of:
combining two or more spike signals into a composite spike signal; and
launching the composite spike signal into the transmitter end of optical link.
7. A method of monitoring performance of an arbitrary optical link, the method comprising steps of:
generating an optical spike within the optical link;
scanning a position of the optical spike between transmitter and receiver ends of the link; and
monitoring an optical power level at the receiver end of the link.
8. A method as claimed in claim 7, wherein the step of generating an optical spike within the optical link comprises steps of:
deriving a spike signal having a plurality of components, an initial phase relationship between the components being selected such that components will be phase aligned at a desired position of the optical spike; and
launching the spike signal into the transmitter end of the optical link.
9. A method as claimed in claim 8, wherein the initial phase relationship between the components is selected to offset dispersion induced phase changes between the transmitter end of the link and the desired position of the optical spike.
10. A method as claimed in claim 9, wherein the step of scanning a position of the optical spike comprises a step of adjusting the initial phase relationship between the components.
11. A method as claimed in claim 8, wherein the step of monitoring an optical power level at the receiver end of the link comprises a step of monitoring a residual power level of the spike signal at the receiver end of the link.
12. A method as claimed in claim 11, wherein the step of monitoring a residual power level of the spike signal at the receiver end of the link comprises a steps of:
selecting component frequencies such that the spike signal generates a second optical spike within the optical link, the second optical spike being substantially fixed at the receiver end of the link; and
monitoring a power level of the second optical spike.
13. A method as claimed in claim 8, wherein the step of monitoring an optical power level at the receiver end of the link comprises steps of:
launching a predetermined test signal into the transmitter end of the link; and
monitoring the test signal at the receiver end of the link.
14. A method as claimed in claim 13, wherein the test signal comprises a second spike signal for generating a respective second optical spike within the optical link, the second optical spike being substantially located at a substantially fixed location proximal the receiver end of the link.
15. A method as claimed in claim 14, wherein the step of monitoring the test signal comprises a step of monitoring a power level of the second optical spike.
16. A method of controlling an arbitrarily selected one of a plurality of optical elements of an optical link, each of the plurality of optical elements being responsive to an elevated optical peak power vs. RMS, the method comprising steps of:
generating an optical spike within the optical link, the optical spike being positioned proximal the selected optical element.
17. A method as claimed in claim 16, wherein the step of generating the optical spike within the optical link comprises steps of:
deriving a spike signal having a plurality of components, an initial phase relationship between the components being selected such that the components will be phase aligned proximal the selected optical element, and not phase aligned elsewhere; and
launching the spike signal into a transmitter end of the optical link.
18. A method as claimed in claim 17, wherein the initial phase relationship between the components is selected to offset dispersion induced phase changes between the transmitter end of the link and the selected optical element.
19. A method as claimed in claim 17, wherein respective component frequencies are selected to define a periodicity of the spike signal sized to ensure that exactly one spike is generated within the link.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method of forming a feature on a substrate, comprising:
a) depositing a barrierwetting layer over the surfaces of an aperture in the substrate, the barrierwetting layer having a thickness of between about 5 and about 700 Angstroms;
b) physical vapor depositing a conformal metal layer over the surface of the barrierwetting layer without capping or filling the aperture at a chamber pressure less than about 1 milliTorr, the physical vapor deposited metal layer having a thickness between about 200 Angstroms and about 1 micron; and
c) filling the aperture with metal.
2. The method of claim 1, wherein filling the aperture with metal comprises reflowing a second deposited metal layer into the aperture.
3. The method of claim 1, wherein filling the aperture with metal comprises physical vapor depositing a bulk PVD metal layer on the conformal PVD met al layer and reflowing the bulk metal layer.
4. The method of claim 1, wherein a) through c) are performed sequentially in an integrated processing system with a common vacuum mainframe.
5. The method of claim 1, wherein a) through c) are performed in separate chambers.
6. The method of claim 1, wherein the metal is not exposed to air prior to filling the aperture.
7. The method of claim 1, wherein the metal is sputtered from a target located from about 150 mm to about 190 mm from the substrate.
8. The method of claim 1, wherein the metal layer is an aluminum layer.
9. A process for filling a via, trench, or dual damascene structure on a substrate, comprising:
a) depositing a conformal barrierwetting layer on the substrate;
b) depositing a conformal PVD metal layer over the barrierwetting layer at a chamber pressure less than about 1 milliTorr; and
c) reflowing a bulk PVD metal layer deposited on the conformal PVD metal layer.
10. The process of claim 9, wherein the conformal PVD metal layer has a blanket thickness from about 200 Angstroms to about 1 micron.
11. The process of claim 10, wherein the barrierwetting layer has a thickness from about 5 Angstroms to about 700 Angstroms.
12. The process of claim 9, wherein the barrierwetting layer is titanium.
13. The process of claim 9 wherein the barrierwetting layer is selected from a group consisting of tungsten (W), niobium (Nb), aluminum silicates, tantalum (Ta), tantalum nitride (TaN), titanium nitride (TiN), PVD TiN2-stuffed, TiSiN, WSiN, or a combination thereof.
14. The process of claim 9, wherein the conformal PVD metal layer is a conformal PVD aluminum layer.
15. The process of claim 9, wherein the bulk PVD metal layer is maintained at a temperature less than 500 C. while reflowing the bulk metal layer.
16. The process of claim 9, wherein the conformal PVD metal layer is sputtered from a target located from about 150 mm to about 190 mm from the substrate.
17. The process of claim 16, wherein the conformal PVD metal layer is sputtered at a chamber pressure less than about 0.35 milliTorr.
18. An apparatus for depositing metal layers, comprising:
a substrate transfer chamber;
a barrierwetting layer chamber connected to the transfer chamber;
a long throw physical vapor deposition chamber connected to the transfer chamber, the physical vapor deposition chamber comprising a target and a substrate separated by a long throw distance of at least 100 mm; and
a hot metal physical vapor deposition chamber connected to the transfer chamber.
19. The apparatus of claim 18, wherein the long throw distance is from about 150 mm to about 190 mm.
20. The apparatus of claim 19, wherein the hot metal physical vapor deposition chamber is also a metal reflow chamber.