All The Claims

1. A removable storage device comprising:
memory configured to store encrypted data at physical memory addresses within the removable storage device;
a processor coupled with the memory, the processor configured to:
receive logical addresses from a host device;
determine the physical memory addresses corresponding to the logical memory addresses via a lookup table;
determine a decryption key corresponding to the encrypted data stored at the physical memory addresses, wherein different decryption keys correspond to encrypted data stored at other physical memory addresses within the removable storage device; and
decrypt the encrypted data using the decryption key corresponding to the encrypted data stored at the physical memory addresses, wherein the different decryption keys correspond to encrypted data stored at different physical memory addresses in the memory of the removable storage device; and

an interface coupled with the processor, the interface configured to communicate the decrypted data from the removable storage device to the host device.
2. The device of claim 1, wherein the different decryption keys are assigned to different logical block address ranges within the memory, the different logical block address ranges corresponding to different physical block numbers of the different physical memory addresses within the memory.
3. The device of claim 2, wherein the lookup table comprises block status bytes that hold unique decryption keys for each of the different logical block address ranges.
4. The device of claim 2, wherein the physical block numbers correspond to sets of memory pages, each of the memory pages comprising sector data mapped to the physical memory addresses and extra data mapped adjacent the sector data.
5. The device of claim 4, wherein the extra data include parity bits allocated to parity checking of the sector data.
6. The device of claim 4, wherein the extra data include error correction bytes allocated to error correction of the sector data.
7. The device of claim 4, wherein the extra data include data sector utilization information used to create the lookup table.
8. The device of claim 1, wherein the different physical addresses correspond to different physical blocks of the memory.
9. The device of claim 8, further comprising a plurality of memory pages mapping sector data to the physical memory addresses in each of the different physical blocks, and further comprising extra data mapped adjacent the sector data.
10. The device of claim 9, wherein the extra data include data sector information used to create the lookup table.
11. A removable storage device comprising:
memory configured to store encrypted data at physical memory addresses within the removable storage device;
a lookup table configured to map the physical memory addresses to logical memory addresses;
a memory controller configured to:
determine a decryption key corresponding to the encrypted data stored at the physical memory addresses, wherein different decryption keys correspond to encrypted data stored at other physical memory addresses within the removable storage device; and
decrypt the encrypted data using the decryption key corresponding to the encrypted data stored at the physical memory addresses, wherein the different decryption keys are assigned to different logical block address ranges corresponding to different physical blocks of the memory on the removable storage device; and

an interface coupled with the memory controller, the interface configured to receive the logical memory addresses from a host device and communicate the decrypted data from the removable storage device to the host device.
12. The device of claim 11, wherein the lookup table comprises block status bytes that hold unique decryption keys for each of the different logical block address ranges.
13. The device of claim 11, wherein each of the physical memory blocks comprises a plurality of memory pages, each of the memory pages comprising sector data mapped to the physical memory addresses and extra data mapped adjacent the sector data.
14. The device of claim 13, wherein the memory pages map a plurality of adjacent data sectors comprising the sector data adjacent an extra sector comprising the extra data.
15. The device of claim 13, wherein the memory pages map adjacent pairs of data sectors and extra sectors to the physical memory addresses within the different physical memory blocks, such that the data sectors comprising the sector data are adjacent the extra sectors comprising the extra data.
16. The device of claim 13, wherein the extra data include parity bits allocated to parity checking of the sector data.
17. The device of claim 13, wherein the extra data include data sector utilization information used to create the lookup table.
18. A portable storage device comprising:
memory configured to store encrypted data at physical memory addresses with different physical block numbers within the portable storage device, the memory having a page organization wherein sector data are mapped to the physical memory addresses and extra data are mapped adjacent the sector data;
a lookup table for mapping the physical memory addresses to logical memory addresses, the lookup table assigning different decryption keys to different logical block address ranges corresponding to the different physical block numbers;
a processor coupled with the memory, the processor configured to determine the different decryption keys assigned to the different logical block address ranges within the memory of the portable storage device, and decrypt the encrypted data, using the different decryption keys; and
an interface coupled with the processor, the interface configured to receive the logical memory addresses and communicate the decrypted data to a host device.
19. The device of claim 18, wherein the extra data include data sector utilization information used to create the lookup table.
20. The device of claim 18, wherein the extra data include storage bytes allocated to error correction of the sector data.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A silicon carbide substrate made of a single crystal of silicon carbide, and having
a width of not less than 100 mm, a micropipe density of not more than 7 cm\u22122, a threading screw dislocation density of not more than 1\xd7104 cm\u22122, a threading edge dislocation density of not more than 1\xd7104 cm\u22122, a basal plane dislocation density of not more than 1\xd7104 cm\u22122, a stacking fault density of not more than 0.1 cm\u22121, a conductive impurity concentration of not less than 1\xd71018 cm\u22122, a residual impurity concentration of not more than 1\xd71016 cm\u22122, and a secondary phase inclusion density of not more than 1 cm\u22123.
2. A method of manufacturing a silicon carbide substrate, comprising the steps of:
preparing a seed crystal substrate made of a single crystal of silicon carbide;
preparing source powder of silicon carbide to be grown on a surface of said seed crystal substrate; and
growing silicon carbide on the surface of said seed crystal substrate by sublimation by placing said seed crystal substrate and said source powder in a processing container,
in said step of growing silicon carbide, vibration applied to said processing container being set such that its frequency has a maximum value of 10 Hz and its amplitude has a maximum value of 1 mm.
3. The method of manufacturing a silicon carbide substrate according to claim 2, wherein
said step of preparing source powder includes the steps of
preparing powder containing silicon carbide, and
cleaning said powder with aqua regia.
4. The method of manufacturing a silicon carbide substrate according to claim 3, wherein
said step of preparing powder containing silicon carbide includes the steps of heating a mixture of small pieces of silicon and carbon powder, and pulverizing said mixture after said heating step to obtain said powder.
5. The method of manufacturing a silicon carbide substrate according to claim 2, wherein
in said step of preparing a seed crystal substrate, an off substrate having a main surface tilted relative to a (0001) plane is prepared as said seed crystal substrate.
6. The method of manufacturing a silicon carbide substrate according to claim 2, wherein
in said step of preparing a seed crystal substrate, said seed crystal substrate having a thickness of not less than 700 \u03bcm is prepared.
7. The method of manufacturing a silicon carbide substrate according to claim 2, wherein
in said step of growing silicon carbide, said seed crystal substrate is fixed on a base member in said processing container,
said base member is made of a material having a Young’s modulus of not less than 10 GPa, a bending strength of not less than 40 MPa, and a tensile strength of not less than 30 MPa, and
said base member has a thickness of not less than 15 mm.
8. The method of manufacturing a silicon carbide substrate according to claim 2, wherein
said step of preparing a seed crystal substrate includes the steps of preparing a plurality of silicon carbide single crystals each having a main surface,
measuring a characteristic value corresponding to density of defects in each of said plurality of silicon carbide single crystals by conducting photoluminescence measurement of said main surface of each of said silicon carbide single crystals, and
comparing the measured characteristic values obtained in said measuring step with a predetermined criterion to determine any of said silicon carbide single crystals satisfying the criterion as said seed crystal substrate.

1. A compound represented by the formula (1)
wherein
A is a CH, and
B is sulfur;
R1 is a phenyl, wherein the phenyl is substituted with one or more substituents selected from the group consisting of chlorine, trifluoromethyl, and t-butyl,
L1 is a bond,
X is OH,
R2 is methyl,
L2 is a bond,
L3 is NH,
L4 is NH,
Y is sulfur, and
R3 is phenyl substituted with a carboxy group,

a tautomer, prodrug or pharmaceutically acceptable salt of the compound.
2. 4-{(2-1-5-(4-t-butylphenyl)-4-hydroxy-3-thienylethylidenehydrazine)cabonothioylamino}benzoic acid, a tautomer thereof or a pharmaceutically acceptable salt thereof.
3. 4-((2-(1-5-(3,4-dichlorophenyl)-4-hydroxy-3-thienylethyliden)hydrazine)carbonothioylamino)benzoic acid, a tautomer thereof or a pharmaceutically acceptable salt thereof.
4. 4-(2-{1-5-(4-trifluoromethylphenyl)-4-hydroxy-3-thienylethylidene}hydrazino)carbonylbenzoic acid, a tautomer thereof or a pharmaceutically acceptable salt thereof.
5. 4-{(2-{1-5-(3-trifluoromethylphenyl)-4-hydroxy-3-thienylethylidene}hydrazino)-carbonothioylamino}benzoic acid, a tautomer thereof or a pharmaceutically acceptable salt thereof.
6. 3-{(2-(1-5-(3,4-dichlorophenyl)-4-hydroxy-3-thienylethylidene)hydrazine)-carbonothioylamino}benzoic acid, a tautomer thereof or a pharmaceutically acceptable salt thereof.
7. 3-((2-(1-5-(4-t-butylphenyl)-4-hydroxy-3-thienylethylidene)hydrazine)-carbonothioylamino)benzoic acid, a tautomer thereof or a pharmaceutically acceptable salt thereof.
8. 3-((2-(1-5-(4-chlorophenyl)-4-hydroxy-3-thienylethylidene)hydrazine)-carbonothioylamino)benzoic acid, a tautomer thereof or a pharmaceutically acceptable salt thereof.
9. 3-((2-(1-5-(3-chlorophenyl)-4-hydroxy-3-thienylethylidene)hydrazine)-carbonothioylamino)benzoic acid, a tautomer thereof or a pharmaceutically acceptable salt thereof.
10. A composition comprising at least one compound of claim 1, a tautomer thereof, a prodrug thereof, or a pharmaceutically acceptable salt thereof; and at least one carrier.
11. A composition comprising the compound of claim 2, a tautomer thereof, or a pharmaceutically acceptable salt thereof; and at least one carrier.
12. A composition comprising the compound of claim 3, a tautomer thereof, or a pharmaceutically acceptable salt thereof; and at least one carrier.
13. A composition comprising the compound of claim 4, a tautomer thereof, or a pharmaceutically acceptable salt thereof; and at least one carrier.
14. A composition comprising the compound of claim 5, a tautomer thereof, or a pharmaceutically acceptable salt thereof; and at least one carrier.
15. A composition comprising the compound of claim 6, a tautomer thereof, or a pharmaceutically acceptable salt thereof; and at least one carrier.
16. A composition comprising the compound of claim 7, a tautomer thereof, or a pharmaceutically acceptable salt thereof; and at least one carrier.
17. A composition comprising the compound of claim 8, a tautomer thereof, or a pharmaceutically acceptable salt thereof; and at least one carrier.
18. A composition comprising the compound of claim 9, a tautomer thereof or a pharmaceutically acceptable salt thereof; and at least one carrier.
19. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 1, a tautomer thereof, a prodrug thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
20. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 2, a tautomer thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
21. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 3, a tautomer thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
22. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 4, a tautomer thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
23. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 5, a tautomer thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
24. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 6, a tautomer thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
25. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 7, a tautomer thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
26. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 8, a tautomer thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
27. A method of treating thrombocytopenia in a patient in need thereof, the method comprising administering to the patient an effective amount of at least one compound of claim 9, a tautomer thereof, or a pharmaceutically acceptable salt thereof to treat the thrombocytopenia.
28. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 1, a tautomer thereof, a prodrug thereof, or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.
29. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 2, a tautomer thereof or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.
30. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 3, a tautomer thereof or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.
31. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 4, a tautomer thereof or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.
32. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 5, a tautomer thereof or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.
33. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 6, a tautomer thereof or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.
34. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 7, a tautomer thereof or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.
35. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 8, a tautomer thereof or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.
36. A method of increasing platelets, vascular endothelial cells andor endothelial progenitor cells, the method comprising administering to the patient an effective amount of at least one compound of claim 9, a tautomer thereof or a pharmaceutically acceptable salt thereof to increase platelets, vascular endothelial cells andor endothelial progenitor cells.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A planar sensor element for determining at least one gas component, comprising:
a layer structure including:
a measuring cell layer;
a covering layer; and
a heating element disposed directly between the measuring cell layer and the covering layer and generating a heating power, a layer-shaped heating conductor being embedded in the heating element in a layer plane of the layer structure;

wherein the layer plane is at least approximately vertically centered with respect to the sensor element, the measuring cell layer, covering layer and layer plane extending in a horizontal direction;
wherein the covering layer adjoins the heating element on a side of the heating element facing away from the measuring cell layer and does not form part of an oxygen pump cell or an oxygen concentration cell; and
wherein the covering layer extends from the side of the heating element facing away from the measuring cell layer to an end face of the planar sensor element.
2. The planar sensor element according to claim 1,
wherein the planar sensor element is formed using a sintering process,
wherein, before the layer structure is sintered, the measuring cell layer includes at least two measuring cell layer foils and the covering layer includes at least one covering layer foil, the covering layer foil having a predetermined thickness, and
wherein a total thickness of the at least two measuring cell layer foils is at least approximately equal to the predetermined thickness.
3. The planar sensor element according to claim 2, wherein the layer structure includes a further layer having a further thickness, and wherein the total thickness includes the further thickness.
4. The planar sensor element according to claim 1, wherein the layer structure further includes a plurality of electrically insulating layers, a first thickness of one of the electrically insulating layers being approximately equal to a second thickness of another one of the electrically insulating layers, and wherein the heating conductor is embedded in the electrically insulating layers, the electrically insulating layers being formed on both sides of the heating conductor.
5. The planar sensor element according to claim 4, wherein the layer structure further includes a sealing frame surrounding the electrically insulating layers, the sealing frame having a frame thickness which is equal to a thickness of the electrically insulating layers.
6. The planar sensor element according to claim 5, wherein the electrically insulating layers include two electrically insulating layers.
7. The planar sensor element according to claim 1, wherein the layer-shaped heating conductor is arranged in the layer plane of the layer structure to obtain an at least approximately homogeneous distribution of the heating power over a cross-section of the sensor element perpendicular to the layer structure.
8. The planar sensor element according to claim 1, wherein the cover layer comprises an entirety of the planar sensor element on one side of the heating element.
9. The planar sensor element according to claim 1, wherein the covering layer is made from stabilized zirconium oxide.
10. The planar sensor element according to claim 1, wherein the measuring cell layer contacts a first planar surface of the heating element and the covering layer contacts a second opposing planar surface of the heating element.
11. The planar sensor element according to claim 1, further comprising a sealing frame around the heating element configured to seal the heating element in a gas-tight manner.
12. A planar sensor element for determining at least one gas component, comprising:
a layer structure including:
at least one of an oxygen pump layer and an oxygen concentration layer;
a covering layer; and
a heating element generating a heating power disposed directly between the covering layer and the at least one of a oxygen pump layer and oxygen concentration layer, a layer-shaped heating conductor being embedded in the heating element in a layer plane of the layer structure;

wherein the layer plane is at least approximately vertically centered with respect to the sensor element, the (i) at least one of an oxygen pump layer and an oxygen concentration layer, (ii) covering layer and (iii) layer plane extending in the horizontal direction;
wherein the covering layer adjoins the heating element on a side of the heating element facing away from the measuring cell layer and does not form a part of another oxygen pump cell or another oxygen concentration cell; and
wherein the covering layer extends from the side of the heating element facing away from the measuring cell layer to an end face of the planar sensor element.
13. A planar sensor element for determining at least one gas component, comprising:
a layer structure including:
a measuring cell layer having at least one surface;
a covering layer; and
a heating element disposed directly between the measuring cell layer and the covering layer and generating a heating power, a layer-shaped heating conductor being embedded in the heating element in a layer plane of the layer structure; and
at least one electrode, each electrode arranged on a respective surface of the measuring cell layer;

wherein the layer-shaped heating conductor is arranged in a layer plane of the layer structure to obtain an at least approximately homogeneous distribution of the heating power over a cross-section of the sensor element perpendicular to the layer structure;
wherein the layer plane is at least approximately vertically centered with respect to the sensor element, the measuring cell layer, covering layer and layer plane extending in the horizontal direction;
wherein the covering layer adjoins the heating element on a side of the heating element facing away from the measuring cell layer and does not form part of an oxygen pump cell or an oxygen concentration cell; and
wherein the covering layer extends from the side of the heating element facing away from the measuring cell layer to an end face of the planar sensor element.