All The Claims

1. An exercise device, comprising:
a central hub;
a plurality of rib structures radiating from the central hub, each rib structure having a proximal end secured at the central hub and terminating at a distal, radiating end; and
a band secured to the distal end of each rib structure such that the plurality of rib structures and the band form an enclosure operable to seat therein a bottom portion of an exercise ball.
2. The exercise device according to claim 1, wherein the central hub is one of solid and annular.
3. The exercise device according to claim 1, wherein the enclosure permits a rolling movement of the exercise ball along a surface when the exercise ball is seated therein.
4. The exercise device according to claim 3, wherein each rib structure is operable to come into rolling contact with the surface as the exercise ball and the enclosure are, together, rolled along the surface in a respective direction of the rib structure.
5. The exercise device according to claim 4, wherein at least one of the rib structures biases the exercise ball in a direction opposing the rolling direction when the at least one rib structure comes into rolling contact with the surface.
6. The exercise device according to claim 4, wherein each rib structure is shaped to bias the exercise ball in a direction opposing the rolling direction when the rib structure comes into rolling contact with the surface.
7. The exercise device according to claim 1, further comprising a pedestal secured to the central hub and operable to hold still the enclosure irrespective of a rolling movement of the exercise ball while the exercise ball is seated in the enclosure.
8. The exercise device according to claim 7, further comprising at least one roller positioned about at least one of the central hub and the band and operable to come into brushing contact with a surface of the exercise ball when the exercise ball is seated in the enclosure such that the rolling movement of the exercise ball causes the at least one roller to at least one of:
correspondingly revolve thereabout thereby facilitating the rolling movement of the exercise ball within the enclosure; and
correspondingly revolve thereabout in a direction opposite the rolling movement of the exercise ball and, thereby, resist the rolling movement of the exercise ball within the enclosure.
9. An exercise device, comprising:
a central hub;
a plurality of rib structures, each rib structure having a proximal end and a distal end and being secured to the central hub at an intermediate point between the proximal end and the distal end;
a band secured to the distal end of each rib structure such that the central hub, the plurality of rib structures, and the band form an enclosure operable to seat therein a bottom portion of an exercise ball, the proximal ends forming a pedestal operable to hold still the enclosure with respect to ground irrespective of a rolling movement of the exercise ball while the exercise ball is seated in the enclosure.
10. An exercise device, comprising:
a central hub;
a plurality of rib structures removably attached to and radiating from the central hub, each rib structure:
having an exterior surface with a longitudinal axis;
terminating into a radiating end; and
having at least one wing, formed substantially parallel to the longitudinal axis, that protrudes away from the exterior surface to a given distance that increases along a direction towards the radiating end; and

a band connected to the radiating end of each rib structure such that the central hub, the plurality of rib structures, and the band form an enclosure to seat therein a bottom portion of an exercise ball, the at least one wing of each rib structure operable to provide an increasing resistance against a rolling movement of the exercise ball along a surface when the exercise ball is seated therein.
11. The exercise device according to claim 10, wherein the central hub is an annular ring exposing therethrough a bottommost portion of the exercise ball when the exercise ball is seated in the enclosure.
12. The exercise device according to claim 10, wherein the band is removably secured to the radiating end of each rib structure.
13. The exercise device according to claim 10, wherein the at least one wing is operable to come into rolling contact with the surface as the exercise ball and the enclosure are, together, rolled in a direction along the surface, thereby biasing the exercise ball in a direction opposing the rolling direction.
14. The exercise device according to claim 10, wherein the diameter of each rib structure widens towards the radiating end of the rib structure.
15. The exercise device according to claim 10, wherein the at least one wing is curved and defines a protruding edge, and further comprising at least one modular, arc-shaped enhancer:
shaped to conform to the curvature of the at least one wing; and
operable to be selectively applied to at least a portion of the protruding edge of the at least one wing, thereby increasing a distance that the at least one wing protrudes from the exterior surface of the rib structure.
16. The exercise device according to claim 15, wherein the enhancer comprises an interior groove shaped to receive the portion of the protruding edge of the at least one wing when the enhancer is applied to the at least one wing.
17. The exercise device according to claim 10, wherein the at least one wing is partitioned to comprise at least two parts.
18. The exercise device according to claim 17, wherein the at least two parts are interlocked.
19. The exercise device according to claim 17, wherein the at least one wing is curved and defines a protruding edge, and further comprising at least one modular, arc-shaped enhancer:
shaped to conform to the curvature of at least one of the parts of the at least one wing; and
operable to be selectively applied to at least a portion of the protruding edge of the at least one part of the at least one wing, thereby increasing a distance that the part protrudes from the exterior surface of the rib structure.
20. The exercise device according to claim 19, wherein the enhancer comprises an interior groove shaped to receive the portion of the protruding edge of the at least one part of the at least one wing when the enhancer is applied to the at least one part.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A pharmaceutical composition for parenteral administration comprising:
nicardipine or a pharmaceutically acceptable salt thereof;
a tonicity agent; and
a buffer; wherein the composition requires no dilution before administration and has a pH from about 3.6 to about 4.7.
2. The pharmaceutical composition of claim 1, wherein the pharmaceutically acceptable salt is nicardipine hydrochloride.
3. The pharmaceutical composition of claim 2, wherein quantity of nicardipine hydrochloride is in the range from about 0.1 to about 0.2 mgml.
4. The pharmaceutical composition of claim 1, wherein the tonicity agent is selected from the group consisting of dextrose and sodium chloride.
5. The pharmaceutical composition of claim 4, wherein the tonicity agent is dextrose.
6. The pharmaceutical composition of claim 4, wherein the tonicity agent is sodium chloride.
7. The pharmaceutical composition according to claim 1, wherein the buffer is citric acid or a pharmaceutically acceptable salt thereof.
8. The pharmaceutical composition of claim 1, further comprising a cosolvent.
9. The pharmaceutical composition of claim 8, in which the cosolvent is sorbitol.
10. The pharmaceutical composition of claim 1, in which the pharmaceutically acceptable salt is nicardipine hydrochloride in a quantity in the range from about 0.1 to about 0.2 mgml, the tonicity agent is dextrose in a quantity in the range from about 46 mgml to about 50 mgml, and the buffer is citric acid in a quantity in the range of from about 0.0192 mgml to about 0.0384 mgml.
11. The pharmaceutical composition of claim 10, further comprising sorbitol in a quantity in the range of from about 1.92 mgml to about 3.84 mgml.
12. The pharmaceutical composition of claim 1, in which the pharmaceutically acceptable salt is nicardipine hydrochloride in a quantity in the range from about 0.1 to about 0.2 mgml, the tonicity agent is sodium chloride in a quantity in the range of from about 8.3 mgml to about 9 mgml, and the buffer is citric acid in a quantity in the range of from about 0.0192 mgml to about 0.0384 mgml.
13. The pharmaceutical composition of claim 12, further comprising sorbitol in a quantity in the range of from about 1.92 mgml to about 3.84 mgml.
14. The pharmaceutical composition of claim 1, further comprising a pH adjuster selected from the group consisting of an acid and a base.
15. The pharmaceutical composition of claim 1, wherein the osmolality is in the range from about 250 to 350 mOsmkg.
16. The pharmaceutical composition of claim 1, further comprising a pharmaceutically acceptable container selected from the group consisting of intravenous bags and bottles.
17. A pharmaceutical composition for parenteral administration comprising:
nicardipine or a pharmaceutically acceptable salt thereof;
a tonicity agent; and
a buffer; wherein the composition requires no dilution before administration, has a pH from about 3.6 to about 4.7, and has less than a 10% decrease in the concentration of nicardipine or a pharmaceutically acceptable salt thereof for at least one year at room temperature.
18. The pharmaceutical composition of claim 17, wherein the pharmaceutically acceptable salt is nicardipine hydrochloride in a quantity in the range from about 0.1 to about 0.2 mgml.
19. The pharmaceutical composition of claim 17, wherein the tonicity agent is dextrose.
20. The pharmaceutical composition of claim 17, wherein the tonicity agent is sodium chloride.
21. The pharmaceutical composition of claim 17, wherein the buffer is citric acid or a pharmaceutically acceptable salt thereof.
22. The pharmaceutical composition of claim 17, further comprising at least one cosolvent.
23. The pharmaceutical composition of claim 22, in which the cosolvent is sorbitol.
24. A pharmaceutical composition for parenteral administration comprising:
nicardipine or a pharmaceutically acceptable salt thereof;
a tonicity agent; and a buffer; wherein the composition requires no dilution before administration, has a pH from about 3.6 to about 4.7, and has a total impurity formation of less than about 3% for at least one year at room temperature.
25. The pharmaceutical composition of claim 24, wherein the pharmaceutically acceptable salt is nicardipine hydrochloride in a quantity in the range from about 0.1 to about 0.2 mgml.
26. The pharmaceutical composition of claim 25, wherein the tonicity agent is dextrose.
27. The pharmaceutical composition of claim 25, wherein the tonicity agent is sodium chloride.
28. The pharmaceutical composition of claim 25, wherein the buffer is citric acid or a pharmaceutically acceptable salt thereof.
29. The pharmaceutical composition of claim 25, further comprising at least one cosolvent.
30. The pharmaceutical composition of claim 29, in which the cosolvent is sorbitol.
31. A method for preventing acute elevations of blood pressure in a human subject in need thereof, said method comprising parenterally administering the composition of claim 1.
32. A method for treating acute elevations of blood pressure in a human subject in need thereof, said method comprising parenterally administering the composition of claim 1.
33. A method for inducing hypotension in a human subject in need thereof, said method comprising parenterally administering the composition of claim 1.
34. A method for making a pharmaceutical composition for intravenous administration comprising:
providing a solution comprising a tonicity agent, a buffer, and at least one active ingredient selected from the group consisting of nicardipine andor pharmaceutically acceptable salts thereof;
adjusting the pH of the composition as necessary to achieve a pH within the range of from about 3.6 to 4.7;
further diluting the composition to a final active ingredient concentration; and;
filling pharmaceutically acceptable containers with the composition.
35. The method according to claim 34, in which the tonicity agent is selected from the group consisting of dextrose and sodium chloride.
36. The method according to claim 34, further comprising adding at least one cosolvent to the buffered solution.
37. The method according to claim 36, in which the cosolvent is sorbitol.
38. The method according to claim 35, wherein providing the solution comprises the steps of providing an initial solution comprising water and at least one buffer at a pH less than about 5.0, and thereafter adding at least one active ingredient to the initial solution.
39. The method according to claim 38, wherein the initial solution has a pH less than about 3.6

1. A method for producing a III-V group compound semiconductor layer, comprising the steps of:
forming a first III-V group compound semiconductor layer on a substrate in a reaction chamber; and
supplying a III group material gas to the reaction chamber before and after the step of forming the first III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber wherein the III group material gas is supplied when a substrate temperature becomes a preferable temperature or higher.
2. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the step of supplying the III group material gas includes a step of forming a first transition III-V group compound semiconductor layer by supplying the III group material gas.
3. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the step of forming the first III-V group compound semiconductor layer includes a step of forming the first III-V group compound semiconductor layer at a first substrate temperature.
4. A method for producing a III-V group compound semiconductor layer according to claim 3, further comprising a step of forming a second III-V group compound semiconductor layer at a second substrate temperature in the reaction chamber,
wherein the step of supplying the III group material gas includes a step of supplying the III group material gas while the substrate temperature changes from the first substrate temperature to the second substrate temperature.
5. A method for producing a III-V group compound semiconductor layer according to claim 4, wherein the step of supplying the III group material gas includes a step of supplying a V group material gas with the III group material gas while the substrate temperature changes from the first substrate temperature to the second substrate temperature.
6. A method for producing a III-V group compound semiconductor layer according to claim 4, wherein the step of forming the second III-V group compound semiconductor layer includes a step of forming a second III-V group compound semiconductor layer using the III group material gas after stopping the III group material gas for 10 seconds or shorter.
7. A method for producing a III-V group compound semiconductor layer according to claim 4, wherein:
the substrate is a GaAs substrate;
the step of forming the first III-V group compound semiconductor layer includes a step of forming a first GaAs buffer layer at the first substrate temperature on the GaAs substrate;
the step of forming the second III-V group compound semiconductor layer includes a step of forming a second GaAs buffer layer at the second substrate temperature; and
the step of supplying the III group material gas includes a step of supplying the III group material gas while the substrate temperature changes from the first substrate temperature to the second substrate temperature.
8. A method for producing a III-V group compound semiconductor layer according to claim 7, wherein the step of supplying the III group material gas includes a step of supplying a III group material gas used in at least one of the steps of forming the first GaAs buffer layer and the step of forming the second GaAs buffer layer as the III group material gas.
9. A method for producing a III-V group compound semiconductor layer according to claim 7, further comprising a step of forming a third III-V group compound semiconductor layer at a substrate temperature higher than at least one of the first substrate temperature and the second substrate temperature in the reaction chamber.
10. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the preferable temperature is a substrate temperature at which crystal defects including crystal defects due to re-evaporation of reaction products produced in the reaction chamber and crystal defects due to insufficiency of migration are minimal.
11. A method for producing a III-V group compound semiconductor layer according to claim 10, wherein the step of supplying the III group material gas includes a step of supplying the III group material gas when the substrate temperature becomes the preferable temperature or higher before the step of forming the first III-V group compound semiconductor layer is finished.
12. A method for producing a III-V group compound semiconductor layer according to claim 10, wherein the step of supplying the III group material gas includes a step of supplying the III group material gas when the substrate temperature becomes the preferable temperature or higher while the substrate temperature increases to a first substrate temperature before the step of forming the first III-V group compound semiconductor layer.
13. A method for producing a III-V group compound semiconductor layer according to claim 12, wherein the step of supplying the III group material gas includes a step of supplying a V group material gas with the III group material gas when the substrate temperature becomes the preferable temperature or higher while the substrate temperature increases to the first substrate temperature.
14. A method for producing a III-V group compound semiconductor layer according to claim 10, wherein:
the substrate is a GaAs substrate;
the step of forming the first III-V group compound semiconductor layer includes a step of forming a GaAs buffer layer on the GaAs substrate at a first substrate temperature;
the step of supplying the III group material gas includes a step of supplying the III group material gas when the substrate temperature becomes the preferable temperature or higher while the substrate temperature increases to the first substrate temperature.
15. A method for producing a III-V group compound semiconductor layer according to claim 14, wherein the step of supplying the III group material gas includes a step of supplying a III group material gas used in the step of forming the GaAs buffer layer as the III group material gas.
16. A method for producing a III-V group compound semiconductor layer according to claim 14, further comprising a step of forming an (AlxGa1-x)yIn1-yP layer (0\u2266x<1, 0\u2266y<1) on the GaAs buffer layer.
17. A method for producing a III-V group compound semiconductor layer according to claim 16, wherein:
the step of forming the GaAs buffer layer includes a step of forming the GaAs buffer layer at the first substrate temperature using a first V group material gas; and
the step of forming the (AlxGa1-x)yIn1-yP layer (0x\u22661, 0\u2266y<1) includes a step of for (AlxGa1-x)yIn1-yP layer (0\u2266x\u22661, 0y<1) at a second substrate temperature using a second V material gas,
further comprising a step of switching the first V group material gas to the second V group material gas at a substrate temperature lower than the second substrate temperature.
18. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the first III-V group compound semiconductor layer includes at least one of In and As.
19. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the step of forming the first III-V group compound semiconductor layer includes a step of forming the first III-V group compound semiconductor layer using a metal organic chemical vapor deposition.
20. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the preferable temperature is 600\xb0 C.
21. A method for producing a III-V group compound semiconductor layer according to claim 1, wherein the preferable temperature is 630\xb0 C.
22. A method for producing a semiconductor light-emitting element comprising:
a step of producing a III-V group compound semiconductor layer; and
a step of forming a semiconductor light-emitting element using the III-V group compound semiconductor layer, wherein:
the step of producing the III-V group compound semiconductor layer includes the steps of:
forming a III-V group compound semiconductor layer on a substrate in a reaction chamber; and
supplying a III group material gas to the reaction chamber before and after the step of forming the III-V group compound semiconductor layer to prevent re-evaporation of the III group gas in the reaction chamber wherein the III group material gas is supplied when a substrate temperature becomes a preferable temperature or higher.
23. A method for producing a semiconductor light-emitting element according to claim 22, wherein the step of forming the semiconductor light-emitting element includes a step of forming a semiconductor light-emitting diode or a semiconductor laser.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An image recording apparatus comprising:
a transport unit which transports a medium with a joint portion along a transport path;
a head unit which performs recording of a printing image on both the joint portion and a non-joint portion by ejecting liquid onto the medium;
a heating unit which dries liquid forming the printing image by heating a portion of the medium located at a heating region on the transport path;
a detection unit which detects the joint portion; and
a controller which controls transporting of the medium by the transport unit so that a heating time of the joint portion in the heating region becomes longer than a heating time of the non-joint portion in the heating region on the basis of a detection signal from the detection unit;
wherein the transport unit intermittently transports the medium in the transport direction, and the heating unit heats the joint portion when the joint portion is located at the heating region at the time of moving and stopping the medium,
wherein the head unit performs printing operation by ejecting liquid onto a portion of the medium which is located at an image recording region on the transport path by performing a plurality of reciprocations along the transport direction while the heating unit is heating the joint portion which is located at the heating region when the medium is stopped,
wherein the heating unit continuously heats the joint portion for a predetermined time even after the printing operation is completed, and then the transport unit restarts transporting of the medium thereafter, and
wherein the controller changes the predetermined time according to the number of reciprocations.
2. The image recording apparatus according to claim 1,
wherein the joint portion includes a material which is different from that of the non-joint portion, and is a film.
3. An image recording method comprising:
preparing for an image recording apparatus including a transport unit which transports a medium with a joint portion along a transport direction, a head unit which records a printing image on both the joint portion and a non-joint portion by ejecting liquid onto the medium, a heating unit which dry liquid forming the printing image by heating a portion of the medium which is located at a heating region on the transport path, a detection unit which detects the joint portion, and a controller; and
controlling transporting of the medium by the transport unit so that a heating time of the joint portion in the heating region becomes longer than a heating time of the non-joint portion in the heating region on the basis of a detection signal from the detection unit;
wherein the transport unit intermittently transports the medium in the transport direction, and the heating unit heats the joint portion when the joint portion is located at the heating region at the time of moving and stopping the medium,
wherein the head unit performs printing operation by ejecting liquid onto a portion of the medium which is located at an image recording region on the transport path by performing a plurality of reciprocations along the transport direction while the heating unit is heating the joint portion which is located at the heating region when the medium is stopped,
wherein the heating unit continuously heats the joint portion for a predetermined time even after the printing operation is completed, and then the transport unit restarts transporting of the medium thereafter, and
controlling changes to the predetermined time according to the number of reciprocations.
4. The image recording method according to claim 3,
wherein the joint portion includes a material which is different from that of the non-joint portion, and prepares for a medium of which the material is film.