All The Claims

1.-23. (canceled)
24. A component, comprising:
a substrate; and
a protective layer, consisting of:
an intermediate NiCoCrAlY layer zone located on or near the substrate, and
an outer layer zone arranged on the intermediate NiCoCrAlY layer zone,

wherein the outer layer zone has a structure of a phase \u03b2-NiAl and comprises in a weight percentage:
17%-23% Al,
6%-11% Co,
and Ni balance.
25. The component as claimed in claim 24, wherein the outer layer zone comprises in the weight percentage:
19%-21% Al,
7%-9% Co,
and Ni balance.
26. The component as claimed in claim 25, wherein the outer layer zone comprises in the weight percentage:
20% Al,
8% Co,
and Ni balance.
27. The component as claimed in claim 24, wherein the outer layer zone further comprises in the weight percentage up to 5% Cr.
28. The component as claimed claim 24, wherein the outer layer zone further comprises an additional element selected from a group consisting of Hf, Zr, La, Ce, Y and other elements of a Lanthanide group.
29. The component as claimed in claim 28, wherein a maximum amount of the additional element is 1 weight percentage.
30. The component as claimed in claim 28, wherein the outer layer zone comprises in the weight percentage 0.4%-1.0% Y.
31. The component as claimed in claim 24, wherein the outer layer zone further comprises an element selected from the group Si, Re and Ta.
32. The component as claimed in claim 24, wherein the outer layer zone comprises in the weight percentage:
less than 0.04% C, andor
less than 0.01% H, andor
less than 0.02% N, andor
less than 0.06% O.
33. The component as claimed in claim 24, wherein the outer layer zone comprises in the weight percentage:
less than 0.025% C, andor
less than 0.008% H, andor
less than 0.01% N, andor
less than 0.04% O.
34. The component as claimed in claim 24, wherein the outer layer zone has a thickness between 3 \u03bcm to 100 \u03bcm.
35. A component as claimed in claim 24, wherein the intermediate NiCoCrAlY layer zone comprises in the weight percentage:
24%-26% Co,
16%-18% Cr,
9.5%-11% Al,
1.0%-1.8% Re,
0.3%-0.5 Y,
and Ni balance.
36. The component as claimed in claim 35, wherein the intermediate NiCoCrAlY layer zone further comprises in the weight percentage:
0.1%-2% Si andor
0.2%-8% Ta.
37. The component as claimed in claim 24, wherein the intermediate NiCoCrAlY layer zone comprises in the weight percentage:
11%-13% Co,
20%-23% Cr,
10.5%-11.5% Al,
1.5%-2.5% Re,
0.3%-0.5 Y,
and Ni balance.
38. The component as claimed in claim 24, wherein the intermediate NiCoCrAlY layer zone comprises in the weight percentage:
11%-13.5% Co,
19.5%-23% Cr,
9%-12% Al,
1%-3.2% Re,
0.1%-0.8 Y,
and Ni balance.
39. The component as claimed in claim 24, wherein the intermediate NiCoCrAlY layer zone comprises in the weight percentage:
9%-11% Co,
21%-24% Cr,
11%-14% Al,
0.2%-0.9 Y,
and Ni balance.
40. The component as claimed in claim 24, wherein the intermediate NiCoCrAlY layer zone comprises in the weight percentage:
29%-31% Ni,
26.5%-29.5% Cr,
6.5%-9.5% Al,
0.3%-0.9 Y,
0.5%-0.9 Si,
and Co balance.
41. The component as claimed in claim 24, wherein the intermediate NiCoCrAlY layer zone comprises in the weight percentage:
27%-29% Ni,
22.5%-25.5% Cr,
9%-11% Al,
0.1%-1.1 Y,
and Co balance.
42. The component as claimed in claim 24, wherein in the intermediate NiCoCrAlY layer zone Y is at least partly replaced by the element selected from the group consisting of Si, Hf, Zr, La, Ce and the plurality of other elements of the Lanthanide group.
43. The component as claimed in claim 24, wherein the intermediate NiCoCrAlY layer zone has a thickness of 50 \u03bcm to 600 \u03bcm.
44. The component as claimed in claim 24, wherein the outer layer zone is thinner than the intermediate NiCoCrAlY layer zone.
45. The component as claimed in claim 24, wherein the component is a part of a gas turbine.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A touch panel structure, comprising:
a backlight module having at least one extended wall portion formed along an outer periphery thereof, so that a receiving space is enclosed in the extended wall portion;
a liquid crystal display (LCD) layer being arranged in the receiving space;
a capacitive sensing layer being attached to one side of the LCD layer opposite to the backlight module, and also located in the receiving space;
a bonding layer being applied to between the LCD layer and the capacitive sensing layer; and
an electromagnetic sensing layer being attached to one side of the backlight module opposite to the LCD layer.
2. The touch panel structure as claimed in claim 1, wherein the bonding layer is correspondingly located in the receiving space.
3. The touch panel structure as claimed in claim 1, wherein the bonding layer is selected from the group consisting of optical clear resin (OCR) and optical clear adhesive (OCA).
4. The touch panel structure as claimed in claim 1, wherein the capacitive sensing layer is located in the receiving space with outer peripheral edges thereof fitly contacting with the extended wall portion.
5. The touch panel structure as claimed in claim 1, wherein the LCD layer is located in the receiving space with outer peripheral edges thereof fitly contacting with the extended wall portion.

1. A method of transmitting selected regions of interest of digital video data at selected resolutions, comprising the steps of:
a) capturing digital video;
b) compressing the digital video into a sequence of individual high resolution JPEG 2000 frames and simultaneously extracting from the compressed high resolution JPEG 2000 frames a lower resolution representation of each of the individual high resolution JPEG 2000 frames;
c) storing the individual high resolution JPEG 2000 frames in a storage device;
d) creating a video sequence of the lower resolution representation of each of the stored individual high resolution JPEG 2000 frames;
e) transmitting the video sequence of the lower resolution representation of each of the stored individual high resolution JPEG 2000 frames to a user;
f) creating one or more video sequences of selected regions of interest at selected resolutions greater than the resolution of the video sequence of the lower resolution representation;
g) transmitting one or more video sequences of selected regions of interest at selected resolutions; and
h) repeating steps (f) and (g) at incrementally increased resolutions until a desired resolution of the selected region of interest is reached according to a viewing objective.
2. The method claimed in claim 1, wherein the user selects the regions of interest and the selected resolution.
3. The method claimed in claim 1, wherein selection of the regions of interest and the selected resolution is initiated by an automated process.
4. The method claimed in claim 1, wherein capturing digital video includes real time digital video.
5. The method claimed in claim 1, wherein steps (d) through (h) are deferred until a transmission medium is available.
6. The method claimed in claim 1, wherein the selected resolutions greater than the resolution of the video sequence of the lower resolution representation correspond to a factor of two.
7. The method claimed in claim 1, wherein the video sequence of the lower resolution representation is compressed with an MPEG family of standards.
8. The method claimed in claim 1, wherein the video sequence of the lower resolution representation is compressed with a Motion JPEG 2000 standard.
9. The method claimed in claim 1, wherein the video sequence of the lower resolution representation is compressed with a video coding technique.
10. A method of transmitting selected regions of interest of digital video data andor still imagery data at selected resolutions, comprising the steps of:
a) capturing digital video;
b) compressing the digital video into a sequence of individual high resolution JPEG 2000 frames and simultaneously extracting from the compressed high resolution JPEG 2000 frames a lower resolution representation of each of the individual high resolution JPEG 2000 frames;
c) storing the individual high resolution JPEG 2000 frames in a storage device;
d) creating a video sequence of the lower resolution representation of each of the stored individual high resolution JPEG 2000 frames;
e) transmitting the video sequence of the lower resolution representation of each of the stored individual high resolution JPEG 2000 frames to a user;
f) creating one or more JPEG 2000 high resolution still frames by extracting one or more regions of interest at selected resolutions from the stored individual high resolution JPEG 2000 frames;
g) creating one or more video sequences of selected regions of interest at selected resolutions greater than the resolution of the video sequence of the lower resolution representation;
h) transmitting one or more video sequences of selected regions of interest at selected resolutions andor one or more of the high resolution JPEG 2000 still frames created in step (f); and
i) repeating steps (f) through (h) at incrementally increased resolutions until a desired resolution of the selected region of interest is reached according to a viewing objective.
11. The method claimed in claim 10, wherein the user selects the regions of interest and the selected resolution.
12. The method claimed in claim 10, wherein selection of the regions of interest and the selected resolution is initiated by an automated process.
13. The method claimed in claim 10, wherein the video sequence of the lower resolution representation is compressed with an MPEG family of standards.
14. The method claimed in claim 10, wherein the video sequence of the lower resolution representation is compressed with a Motion JPEG 2000 standard.
15. The method claimed in claim 10, wherein the video sequence of the lower resolution representation is compressed with a video coding technique.
16. The method claimed in claim 10, wherein the extracted regions of interest at selected resolution are in JPEG 2000 format.
17. The method claimed in claim 16, wherein the extracted regions of interest at selected resolution are transmitted using JPIP protocol.
18. The method claimed in claim 10, wherein capturing digital video includes real time digital video.
19. The method claimed in claim 10, wherein steps (d) through (i) are deferred until a transmission medium is available.
20. The method claimed in claim 10, wherein the selected resolutions greater than the resolution of the video sequence of the lower resolution representation correspond to a factor of two.
21. A method of transmitting selected regions of interest of digital video data at selected resolutions, comprising the steps of:
a) capturing digital video;
b) compressing the digital video into a sequence of individual high resolution JPEG 2000 frames and simultaneously extracting from the compressed high resolution JPEG 2000 frames a lower resolution representation of each of the individual high resolution JPEG 2000 frames;
c) storing the individual high resolution JPEG 2000 frames in a storage device;
d) searching for an alert condition within the sequence of individual high resolution JPEG 2000 frames;
e) repeating steps (a) through (d) until capturing of the digital video ends;
f) creating a video sequence of the lower resolution representation of each of the stored individual high resolution JPEG 2000 frames upon finding the alert condition;
g) transmitting the video sequence of the lower resolution representation of each of the stored individual high resolution JPEG 2000 frames to a user upon finding the alert condition;
h) creating one or more video sequences of selected regions of interest at selected resolutions greater than the resolution of the video sequence of the lower resolution representation upon finding the alert condition;
i) transmitting one or more video sequences of selected regions of interest at selected resolutions upon finding the alert condition; and
j) repeating steps (h) and (i) at incrementally increased resolutions until a desired resolution of the selected region of interest is reached according to a viewing objective, upon finding the alert condition.
22. The method claimed in claim 21, wherein the user selects the regions of interest and the selected resolution.
23. The method claimed in claim 21, wherein selection of the regions of interest and the selected resolution is initiated by an automated process.
24. The method claimed in claim 21, wherein capturing digital video includes real time digital video.
25. The method claimed in claim 21, wherein steps (f) through (j) are deferred until a transmission medium is available.
26. The method claimed in claim 21, wherein the selected resolutions greater than the resolution of the video sequence of the lower resolution representation correspond to a factor of two.
27. The method claimed in claim 21, wherein the video sequence of the lower resolution representation is compressed with an MPEG family of standards.
28. The method claimed in claim 21 wherein the video sequence of the lower resolution representation is compressed with a Motion JPEG 2000 standard.
29. The method claimed in claim 21, wherein the video sequence of the lower resolution representation is compressed with a video coding technique.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A III-nitride semiconductor device, comprising:
a III-nitride substrate of a first conductivity type;
a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, wherein the first III-nitride epitaxial layer is characterized by a first charge density;
a second III-nitride epitaxial layer of a second conductivity type coupled to the first III-nitride epitaxial layer; and
an implanted region in the first III-nitride epitaxial layer, wherein the implanted region of the first III-nitride epitaxial layer is characterized by a second charge density, and wherein the second charge density is lower than the first charge density.
2. The device of claim 1, wherein the first III-nitride epitaxial layer comprises an n-type GaN epitaxial material.
3. The device of claim 1, wherein the depth of the implanted region is between 0.1 \u03bcm and 1 \u03bcm.
4. The device of claim 1, wherein a width of the implanted region is 0.5 \u03bcm or greater.
5. The device of claim 1, wherein the III-nitride semiconductor device is characterized by a breakdown voltage of 600V or greater.
6. The device of claim 5, wherein a thickness of the first III-nitride epitaxial layer is between 1 \u03bcm and 100 \u03bcm.
7. The device of claim 1, further comprising a dielectric layer coupled to the implanted region.
8. The device of claim 7, further comprising a first metal structure coupled to at least a portion of the dielectric layer.
9. The device of claim 8, wherein the first metal structure is further coupled to a portion of the implanted region.
10. The device of claim 8, further comprising a second metal structure coupled to the III-nitride substrate.
11. A III-nitride P-i-N diode, comprising:
a III-nitride substrate of a first conductivity type, wherein the III-nitride substrate forms one of either a cathode or an anode of the P-i-N diode;
a first III-nitride epitaxial layer of the first conductivity type coupled to the III-nitride substrate, wherein the first III-nitride epitaxial layer is characterized by a first charge density;
a second III-nitride epitaxial layer of a second conductivity type coupled to the first III-nitride epitaxial layer, wherein the second III-nitride epitaxial layer forms the other of either the cathode or the anode of the P-i-N diode; and
an implanted region in the first III-nitride epitaxial layer, wherein the implanted region of the first III-nitride epitaxial layer is characterized by a second charge density, and wherein the second charge density is lower than the first charge density.
12. The device of claim 11, wherein the first III-nitride epitaxial layer comprises an n-type GaN epitaxial material.
13. The device of claim 11, wherein the depth of the implanted region is between 0.1 \u03bcm and 1 \u03bcm.
14. The device of claim 11, wherein a width of the implanted region is 0.5 \u03bcm or greater.
15. The device of claim 11, wherein the III-nitride semiconductor device is characterized by a breakdown voltage of 600V or greater.
16. The device of claim 15, wherein a thickness of the first III-nitride epitaxial layer is between 1 \u03bcm and 100 \u03bcm.
17. The device of claim 11, further comprising a dielectric layer coupled to the implanted region.
18. The device of claim 17, further comprising a first metal structure coupled to at least a portion of the dielectric layer.
19. The device of claim 18, wherein the first metal structure is further coupled to a portion of the implanted region.
20. The device of claim 18, further comprising a second metal structure coupled to the III-nitride substrate.