All The Claims

1. A method of manufacturing a polymeric electret film comprising steps of:
mixing a suspension of polytetrafluoroethylene resin with at least one additive selected from the group consisting of titanium dioxide, silicon dioxide, carbon black, nano carbon tube, inorganic oxide and organic oxide;
stretching and shaping the suspension of polytetrafluoroethylene resin to form an expanded porous polytetrafluoroethylene (ePTFE) film having a first porous layer of a porous structure, wherein the first porous structure has a pore diameter ranging between 0.01 \u03bcm and 5.0 \u03bcm and has a porosity ranging between 20% and 95%, and the expanded porous polytetrafluoroethylene film has a first surface and an opposite surface;
forming a second porous layer by heating one side of a thin polytetrafluoroethylene material on the first porous layer’s opposite surface to a surface temperature higher than the melting point of the thin polytetrafluoroethylene material and rapidly cooling the other side of the thin polytetrafluoroethylene material, wherein the second porous layer has a thickness which is 0.04% to 40% of the thickness of the expanded porous polytetrafluoroethylene film, a surface roughness Ra ranging between 20 nm and 165 nm and a contact angle for water ranging between 120\xb0 and 135\xb0;
forming an electrode layer on the second porous layer’s opposite surface, wherein the electrode layer has a thickness ranging between 0.1 nm and 300 nm;
disposing a needle electrode above the first surface of the expanded porous polytetrafluoroethylene film with a preset clearance between the needle electrode and the expanded porous polytetrafluoroethylene film, wherein the preset clearance ranges between 0.1 mm and 200 mm;
charging the expanded porous polytetrafluoroethylene film via the needle electrode by a corona charging method at a preset first temperature ranging between 10\xb0 C. and 30\xb0 C. for a preset first period of time ranging between 1 second and 15 seconds, wherein the corona charging method is conducted by applying a DC bias voltage to the expanded porous polytetrafluoroethylene film; and
curing the expanded porous polytetrafluoroethylene film at a preset second temperature ranging between 70\xb0 C. and 90\xb0 C. for a preset second period of time ranging between 5 hours and 10 hours, whereby the polymeric electret film having a surface potential between 0.1 V and 1000 V is formed;
wherein a surface potential of the polymeric electret film decays to less than 24% of an initial value when standing for a period of time greater than 200 days from polarization at room temperature in an endurance test of the polymeric electret film.
2. The method of manufacturing the polymeric electret film according to claim 1, wherein the preset clearance is 50 mm.
3. The method of manufacturing the polymeric electret film according to claim 1, wherein the DC bias voltage is a positive bias voltage ranging between 0.1 kV and 1000 kV.
4. The method of manufacturing the polymeric electret film according to claim 3, wherein the positive bias voltage preferably ranges between 1 kV and 100 kV.
5. The method of manufacturing the polymeric electret film according to claim 1, wherein the DC bias voltage is a negative bias voltage ranging between \u22120.1 kV and \u22121000 kV.
6. The method of manufacturing the polymeric electret film according to claim 5, wherein the negative bias voltage preferably ranges between \u22121 kV and \u2212100 kV.
7. The method of manufacturing the polymeric electret film according to claim 1, wherein the step of forming the electrode layer on the opposite surface of the expanded porous polytetrafluoroethylene film is performed by a process selected from the group consisting of physical vapor deposition, sputtering, sputtering deposition, spin coating, immersion plating and other semiconductor deposition process.
8. The method of manufacturing the polymeric electret film according to claim 1, wherein the electrode layer has a thickness ranging between 50 nm and 150 nm.
9. The method of manufacturing the polymeric electret film according to claim 1, wherein the electrode layer comprises metal oxide, which is selected from the group consisting of indium tin oxide (ITO), antimony tin oxide (ATO), zinc oxide (ZnO), tin oxide (SnO2), indium oxide (In2O3), indium zinc oxide (IZO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), magnesium zinc oxide (MZO), zinc magnesium aluminum oxide (ZMAO) and zinc magnesium gallium oxide (ZMGO).
10. The method of manufacturing the polymeric electret film according to claim 1, wherein the electrode layer comprises metal or metal ion, which is selected from the group consisting of gold, silver, copper, aluminum, platinum and chromium.
11. The method of manufacturing the polymeric electret film according to claim 1, wherein the electrode layer comprises carbon black or nano carbon tube.
12. The method of manufacturing the polymeric electret film according to claim 1, wherein the surface potential of the polymeric electret film ranges between 100 V and 1000 V.
13. The method of manufacturing the polymeric electret film according to claim 12, wherein the polymeric electret film has the surface potential ranging between 500 V and 700 V when the first temperature ranges between 10\xb0 C. and 30\xb0 C.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method for forming a gold plating electrode comprising:
a step of forming a circuit pattern on a substrate;
a step of forming a nickel-containing barrier metal layer at a portion where an electrode of said circuit pattern is formed;
a step of forming a gold layer on said barrier metal layer by plating;
a step of heating said substrate to cause nickel contained in said gold layer to move toward a surface zone of said gold layer to deposit nickel compound in said surface zone of said gold layer, thereby enhancing the fineness of a remaining part of said gold layer at at least an inside zone immediately below said surface zone; and
a step of removing said surface zone containing said nickel compound off said gold layer so as to expose a purified surface of said inside zone of said gold layer.
2. The method for forming a gold plating electrode defined by claim 1, wherein said surface zone containing said nickel compound is removed off by etching.
3. The method for forming a gold plating electrode defined by claim 1, wherein said surface zone containing said nickel compound is removed off by a thickness of 3 to 10 nanometer.
4. The method for forming a gold plating electrode defined by claim 1, wherein said substrate is heated at a temperature of 150 to 200 centigrade for 5 to 60 minutes.
5. The method for forming a gold plating electrode defined by claim 1, wherein said gold layer has a thickness of 5 to 100 nanometer when said gold layer is formed by said plating.
6. A substrate comprising:
a circuit pattern formed on a surface of said substrate;
a nickel-containing barrier metal layer formed at a portion where an electrode of said circuit pattern is formed;
a gold layer formed on said barrier metal layer by plating,
wherein said substrate is heated up to cause nickel contained in said gold layer to move toward a surface zone of said gold layer to deposit nickel compound in said surface zone of said gold layer so that the fineness of a remaining part of said gold layer is enhanced at at least an inside zone immediately below said surface zone, and said surface zone containing said nickel compound is removed off so as to expose a purified surface of said inside zone of said gold layer.
7. A wire bonding method comprising:
a step of forming a circuit pattern on a substrate, forming a nickel-containing barrier metal layer at a portion where an electrode of said circuit pattern is formed, and forming a gold layer on said barrier metal layer by plating, thereby forming an electrode on said substrate;
a step of heating said substrate to cause nickel contained in said gold layer to move toward a surface zone of said gold layer to deposit nickel compound in said surface zone of said gold layer, thereby enhancing the fineness of a remaining part of said gold layer at at least an inside zone immediately below said surface zone;
a step of removing said surface zone containing said nickel compound off said gold layer by etching to expose a purified surface of said inside zone of said gold layer;
a step of applying an adhesive material on said substrate and die bonding a chip on said adhesive material; and
a step of connecting an electrode of said chip to said electrode of said substrate via an electrically conductive wire.

1. A compound, including enantiomers, stereoisomers, and tautomers of said compound and pharmaceutically acceptable salts solvates or derivatives thereof, with said compound having the general structure shown in formula (I):
wherein
R is hydrogen, hydroxy, C1-4alkoxy or amino;
R1 is naphthyl, substituted phenyl, C6-12arylC1-4alkyl, C6-12arylsulfonyl or heteroaryl, and wherein said naphthyl, aryl or heteroaryl is optionally substituted with one or more substituents selected from the group consisting of halogen, C1-6alkyl, C1-6alkenyl, fluoroalkyl or fluoroalkoxy of the formula CnHxFy or OCnHxFy wherein n is an integer from 1 to 4, x is an integer from 0 to 8, y is an integer from 1 to 9 and sum of x and y is 2n+1, C1-4alkoxy, C1-4thioalkyl, hydroxy, hydroxyC1-4alkyl, C1-4acyloxy, nitro, amino, C1-4alkylamino, C1-4dialkylamino, aminoC1-4alkyl, C1-4alkylaminoC1-4 alkyl, C1-4dialkylaminoC1-4alkyl, \u2014CN, \u2014CO2H, \u2014CO2C1-4alkyl, \u2014NHCOC1-4alkyl, substituted or unsubstituted phenyl, substituted or unsubstituted phenoxy, substituted or unsubstituted benzyloxy, substituted or unsubstituted pyrrolyl and substituted or unsubstituted pyridyl;
R2 and R3 are the same or different and are each independently selected from: hydrogen, C1-4alkyl, C1-4dialkylaminoC1-4alkyl, pyrrolidinylC1-4alkyl, imidazolyl or heterocycle selected from morpholinyl, thiomorpholinyl, aziridinyl, pyrrolidinyl, piperidinyl, azepanyl, piperazinyl, diazepanyl, diazabicyclo2.2.1hept-2-yl and triazocanyl; and wherein said heterocycle is optionally substituted with one or more substituents selected from the group consisting of C1-4alkyl, oxo, \u2014CHO and \u2014CO2C1-4alkyl; or
R2 and R3 taken together with the nitrogen atom to which they are attached form an imidazolyl or a heterocycle selected from morpholinyl, thiomorpholinyl, aziridinyl, pyrrolidinyl, piperidinyl, azepanyl, piperazinyl, diazepanyl, diazabicyclo2.2.1hept-2-yl and triazocanyl; and wherein said heterocycle is optionally substituted with one or more substituents selected from the group consisting of C1-4alkyl, oxo, \u2014CHO, \u2014CO2C1-4alkyl, hydroxyC1-4alkyl, oxiranylC1-4alkyl, dihydroxyC1-4alkyl, \u2014(CH2)aN\u2014CO2C1-4alkyl, hydroxyl, and \u2014(CH2)aOPO(OC1-4alkyl)2, wherein a is an integer from 1 to 4;
R4 is C1-4alkyl, fluoroalkyl or fluoroalkoxy of the formula CnHxFy or OCnHxFy wherein n is an integer from 1 to 4, x is an integer from 0 to 8, y is an integer from 1 to 9 and sum of x and y is 2n+1, C1-4alkoxy or C1-4thioalkyl; and
X and Y are CH.
2. The compound as set forth in claim 1, which is selected from the group consisting of:
2-(piperazin-1-yl)-1-(3-nitrophenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(4-methoxyphenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(4-tert-butylphenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(4-bromophenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(4-chlorophenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(3-chloro-4-fluorophenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(3-methoxyphenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(4-thiomethylphenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(3-fluorophenyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(3-methylphenyl)-1H-indole-3-carboxaldehyde,
1-(4-tert-butylphenyl)-2-piperazin-1-yl-1H-indole-3-carboxaldehyde,
1-(4-tert-butylphenyl)-2-piperidin-1-yl-1H-indole-3-carboxaldehyde,
1-(3-formylphenyl)-2-(piperazin-2-yl)-1H-indole-3-carboxaldehyde,
1-(biphenyl-4-yl)-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde hydrochloride,
1-(4-ethylphenyl)-2-(piperazin-1-y)-1H-indole-3-carboxaldehyde hydrochloride,
1-(3-bromophenyl)-2-piperazin-1-yl-1H-indole-3-carboxaldehyde,
1-(4-methyl-3-nitrophenyl)-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde,
1-(4-dimethylaminophenyl)-2-piperazin-1-yl-1H-indole-3-carboxaldehyde,
1-(4-phenoxyphenyl)-2-piperazin-1-yl-1H-indole-3-carboxaldehyde,
1-(4-methylphenyl)-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde,
1-(4-fluorophenyl)-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde hydrochloride,
1-(3-chlorophenyl-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(4-vinylphenyl)-1H-indole-3-carboxaldehyde,
1-(3-hydroxymethylphenyl)-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde,
1-(3-ethoxyphenyl)-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde,
1-(4-butylphenyl)-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde hydrochloride,
N-{3-3-formyl-2-(piperazin-1-yl)-indol-1-ylphenyl}-acetamide hydrochloride,
4-3-formyl-2-(piperazin-1-yl)-indol-1-yl-benzonitrile, and
2-piperazin-1-yl-1-(4-pyridin-4-yl)phenyl-1H-indole-3-carboxaldehyde.
3. The compound as set forth in claim 1, which is selected from the group consisting of:
1-(4-tert-butylphenyl)-2-4-(2-hydroxyethyl)piperazin-1-yl-1H-indole-3-carboxaldehyde,
phosphoric acid 2-{4-1-(4-tert-butylphenyl)-3-formyl-1H-indol-2-yl-piperazin-1-yl}-ethyl ester diethyl ester hydrochloride,
1-(4-tert-butylphenyl)-2-(4-methyl-piperazin-1-yl)-1H-indole-3-carboxaldehyde,
4-1-(4-tert-butylphenyl)-3-formyl-1H-indol-2-ylpiperazine-1-carboxylic acid tert-butyl ester,
5-1-(4-tert-butylphenyl)-3-formyl-1H-indol-2-yl-2,5-diazabicyclo2.2.1heptane-2-carboxylic acid tert-butyl ester,
1-(4-tert-butyl-phenyl)-2-(2-methyl-aziridin-1-yl)-1H-indole-3-carboxaldehyde,
4-3-formyl-1-(4-iodophenyl)-1H-indol-2-yl-piperazine-1-carboxylic acid tert-butyl ester,
4-1-(4\u2032-cyanobiphenyl-4-yl)-3-formyl-1H-indol-2-yl-piperazine-1-carboxylic acid tert-butyl ester, and
4-{1-4-(tert-butoxylcarbonyl-1H-pyrrol-2-yl)-phenyl-3-formyl-1H-indol-2-yl}-piperazine-1-carboxylic acid tert-butyl ester.
4. The compound as set forth in claim 1, wherein R2 and R3 taken together with the nitrogen atom to which they are attached form imidazolyl.
5. The compound as set forth in claim 4, wherein said compound is 2-imidazol-1-yl-1-phenyl 1H-indole-3-carboxaldehyde.
6. The compound as set forth in claim 1, wherein R2 is hydrogen or methyl, and R3 is dimethylaminoethyl, pyrrolidinylethylamino, and piperidinyl.
7. The compound as set forth in claim 6, wherein said compound is selected from the group consisting of:
2-(2-dimethylaminoethylamino)-1-phenyl-1H-indole-3-carboxaldehyde,
2-(methylpiperidin-4-yl)amino-1-phenyl-1H-indole-3-carboxaldehyde,
1-(4-tert-butylphenyl)-2-(2-dimethylaminoethyl)-methylamino-1H-indole-3-carboxaldehyde,
1-(4-tert-butylphenyl)-2-(2-dimethylaminoethylamino)-1H-indole-3-carboxaldehyde, and
1-(4-tert-butylphenyl)-2-(2-pyrrolidin-1-yl-ethylamino)-1H-indole-3-carboxaldehyde hydrochloride.
8. The compound as set forth in claim 1, wherein R1 is benzyl, naphthyl, thienyl, pyridinyl, and benzenesulfonyl.
9. The compound as set forth in claim 8, which is selected from the group consisting of:
2-(piperazin-1-yl)-1-benzyl-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(1-naphthyl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(thien-3-yl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(pyridin-2-yl)-1H-indole-3-carboxaldehyde,
2-(piperazin-1-yl)-1-(pyridin-3-yl)-1H-indole-3-carboxaldehyde and
1-benzenesulfonyl-2-(piperazin-1-yl)-1H-indole-3-carboxaldehyde.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for selecting the medium access method in a communications network, using
information exchanged between at least two transmission devices, possibly via a plurality of further transmission devices, on the basis of a further plurality of medium access methods (FDMA, TDMA, CDMA), with each medium access method taking up characteristic resources in each of the transmission devices,
characterized
in that, on the basis of ascertainment of all the available resources in a transmission device, the medium access method which takes up the currently least used resource of this transmission device is set selectively.
2. The method as claimed in claim 1,
characterized
in that a medium access method is set section by section between two respective transmission devices.
3. The method as claimed in claim 1 or 2,
characterized
in that the transmission devices are in the form of subscriber terminals (TLN1, TLNi) or router devices arranged between said subscriber terminals.
4. The method as claimed in claim 1 to 3,
characterized
in that the communications network is of packet-oriented design.
5. The method as claimed in one of the preceding claims,
characterized
in that the information is exchanged on the basis of an Internet protocol (TCPIP) or a protocol (UMTS) used for mobile radio.
6. The method as claimed in one of claims 1 to 5,
characterized
in that the information is exchanged on the basis of an asynchronous transfer mode (ATM).
7. The method as claimed in one of the preceding claims,
characterized
in that the medium access methods is in the form of an FDMA medium access method (FDMA), a TDMA medium access method (TDMA), or a CDMA medium access method (CDMA).