1461170518-3c1547c9-e5c6-4019-a45f-cc39832fbb5d

1. A security specification creation support device that supports creation of a security specification in respect of an information network system, comprising:
a security specification example database in which existing security specifications are registered as examples;
a definition information acceptance unit that accepts definition information of respective components constituting the information network system from a user;
a security specification selection unit that looks up reusable examples from the security specification example database based on definition information of the component accepted by the definition information acceptance unit in respect of the respective components; and
a security specification draft creation unit that creates a composite security specification draft in respect of an information network system by entering the details of respective examples found by the specification selection unit in a prescribed form of security specification and accepts revisions of the draft from the user.
2. The security specification creation support device according to claim 1, wherein:
the security specification selection unit, when at least one reusable example is detected from the security specification example database in respect of the respective components, allows a user to select an example for re-use from the detected examples and uses this selected example as a security specification draft for the component and accepts from the user revisions of this draft, and when no reusable example is detected from the security specification example database, creates security
specification drafts of the respective components by accepting from the user a security specification draft of the components; and
the security specification draft creation unit creates the composite security specification draft by entering the details of the security specification drafts of the respective components in the prescribed form of security specification.
3. The security specification creation support device according to claim 2, wherein the security specification draft creation unit creates the composite security specification draft, such that portions where details of the security specification drafts of the respective components can be identified.
4. The security specification creation support device according to claim 1, wherein the definition information acceptance unit accepts from the user definition information of respective domains obtained by dividing the information network system into operational environment units, definition information of respective subsystems obtained by dividing these domains into device units in respect of the respective domains, and definition information of the respective components obtained by dividing these subsystems into minimum units for security analysis in respect of the respective subsystems.
5. The security specification creation support device according to claim 4, wherein the security specification draft creation unit creates a composite security specification draft of the domain or the subsystem by entering the details of the security specification draft of the respective components belonging to the domain or the subsystem in a prescribed form of security specification.
6. The security specification creation support device according to claim 5, wherein:
in the security specification example database, previously created composite security specifications of domains and subsystems are registered as examples, and
the security specification selection unit looks up examples of composite security specifications of domains or subsystems that can be re-used from the security specification example database, based on the definition information of the domain or subsystem accepted by the definition information acceptance unit, in respect of the respective domains or the respective subsystems.
7. The security specification creation support device according to claim 4, further comprising a system configuration example database in which typical patterns of component configurations in respect of a plurality of respective subsystems are registered as examples,
wherein the definition information acceptance unit identifies a typical pattern of component configuration of the subsystem from the system configuration examples based on the subsystem definition information accepted from the user, and accepts definition information from the user in respect of respective components indicated by the component configuration of identified typical pattern.
8. The security specification creation support device according to claim 4, further comprising a tree display unit that displays respective domains, subsystems and components whose definition information has been accepted by the definition information acceptance unit, in a tree structure in which layer relationship in the information network system can be identified.
9. The security specification creation support device according to claim 8, wherein the tree display unit displays respective components constituting the same subsystem in a layer structure in which a layer relationship in the subsystem can be identified.
10. The security specification creation support device according to claim 8, wherein the tree display unit displays respective components in such a way that whether or not an example has been detected by the security specification selection unit can be identified.
11. The security specification creation support device according to claim 1, wherein the security specification example database is arranged separated from the security specification selection unit, with communication there between through a network.
12. A program product capable of being read by a computer for supporting creation of a security specification in respect of an information network system, which comprises:
a definition information acceptance program that accepts definition information of respective components constituting the information network system from a user;
a security specification selection program that looks up reusable examples from a security specification example database in which existing security specifications are registered as examples based on definition information of the component accepted by the definition information acceptance unit in respect of the respective components; and
a security specification draft creation program that creates a composite security specification draft in respect of an information network system by entering the details of respective examples found by the security specification selection unit in a prescribed form of security specification and accepts revisions of the draft from the user.
13. A security specification creation support method that supports creation of a security specification in respect of an information network system using a computer
in which a security specification example database in which existing security specifications are registered as examples is stored in a storage device of the computer or in another computer connected with the aforesaid computer through a network, and
the computing device of the computer performs operations comprising:
accepting from the user definition information of respective components constituting the information network system;
selecting a security specification by looking up reusable examples from the security specification example database based on the accepted definition information in respect of the respective components; and
creating a composite security specification draft in respect of the information network system by entering the details of respective examples found by the security specification selection step in a prescribed form of security specification and accepting revisions of the draft in question are accepted from the user.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A lanthanide compound comprising one of Formulae XII-A and XII-B below:
Ln(\u03b2-enolate)3(bisphosphine oxide-sulfide)1\u2003\u2003(XII-A)
Ln(\u03b2-enolate)3(bisphosphine oxide-sulfide)2\u2003\u2003(XII-B)

where:
in Formulae (XII-A) and (XII-B):
bis-phosphine oxide-sulfide has Formula III
Q2P(S)-LG-P(O)Q2\u2003\u2003(III)
such that:
in Formula III:
Q is the same or different at each occurrence and is selected from C6HnF5\u2212n, and
Cm(H+F)2m+1,
m is an integer from 1 to 12, and
n is 0 or an integer from 1 to 5,

LG is the same or different at each occurrence and is a linking group selected from Cm(H+F)2m, wherein m is an integer from 1 to 12, arylene, cyclic heteroalkylene, heteroarylene, alkyleneheteroarylene, ferrocenediyl, and o-carboranediyl.
2. The compound of claim 1 wherein the Ln is selected from Eu, Tb and Tm.
3. The compound of claim 1 where in the bisphosphine oxide-sulfide is selected from (1-diphenylphosphoryl-1-diphenylthiophosphoryl)methane, (1-diphenylphosphoryl-2-diphenylthiophosphoryl)ethane, and (1-diphenylphosphoryl-3-diphenylthiophosphoryl)propane.
4. The compound of claim 1 wherein the \u03b2-enolate is selected from 2,4-pentanedionate; 1,3-diphenyl-1,3-propanedionate; 2,2,6,6-tetramethyl-3,5-heptanedionate; 1-(2-thienyl)4,4,4-trifluoroacetate; 7,7-dimethyl-1,1,1,2,2,3,3-heptafluoro-4,6-octanedionate; 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; 1,1,1,3,5,5,5-heptafluoro-2,4-pentanedionate; and 1-phenyl-3-methyl-4-i-butyryl-5-pyrazolinonate.
5. An electronic device comprising a photoactive layer, wherein the photoactive layer comprises the lanthanide compound of claim 1.
6. The device of claim 5 wherein the lanthanide compound is present in an amount of up to about 85% by volume based on the total volume of the photoactive layer.
7. The device of claim 5 wherein the photoactive layer further comprises a charge transport material.
8. The device of claim 7 wherein the charge transport material is a hole transport material and is selected from N,N\u2032-diphenyl-N,N\u2032-bis(3-methylphenyl)-1,1\u2032-biphenyl-4,4\u2032-diamine; bis4-(N,N-diethylamino)-2-methylphenyl(4-methylphenyl)methane; and combinations thereof.
9. The device of claim 7 wherein the charge transport material is an electron transporting material and is selected from 4,4\u2032-N,N\u2032-dicarbazole biphenyl; chelated oxinoid compounds of aluminum; cyclometalated iridium complexes with 2-phenylpyridines; and combinations thereof.
10. The device of claim 5, further comprising a hole transport layer comprising at least one of the following compounds: N,N\u2032-diphenyl-N,N\u2032-bis(3-methylphenyl)-1,1\u2032-biphenyl-4,4\u2032-diamine; 1,1-bis(di-4-tolylamino)phenylcyclohexane; N,N\u2032-bis(4-methylphenyl)-N,N\u2032-bis(4-ethylphenyl)-1,1\u2032-(3,3\u2032-dimethyl)biphenyl-4,4\u2032-diamine; tetrakis-(3-methylphenyl)-N,N,N\u2032,N\u2032-2,5-phenylenediamine; \u03b1-phenyl-4-N,N-diphenylaminostyrene; p-(diethylamino)-benzaldehyde diphenylhydrazone; triphenylamine; bis4-(N,N-diethylamino)-2-methylphenyl(4-methylphenyl)methane; 1-phenyl-3p-(diethylamino)styryl-5-p-(diethylamino)phenylpyrazoline; 1,2-trans-bis(9H-carbazol-9-yl)cyclobutane; N,N,N\u2032,N\u2032-tetrakis(4-methylphenyl)-(1,1\u2032-biphenyl)-4,4\u2032-diamine; porphyrinic compounds; and combinations thereof.
11. The device of claim 5, further comprising an electron transport layer comprising at least one of the following compounds: tris(8-hydroxyquinolato)aluminum; 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline; 4,7-diphenyl-1,10-phenanthroline; 2-(4-biphenylyl)-5-(4-t-butylphenyl)-1,3,4-oxadiazole; 3-(4-biphenylyl)-4-phenyl-5-(4-t-butylphenyl)-1,2,4-triazole; and combinations thereof.

1461170509-119711a4-b909-4aee-b135-79cfcad2ab55

1. A pressure switch assembly, comprising:
a semiconductor substrate;
a cavity defined within the semiconductor substrate having a cross-sectional area and a depth;
a bottom conductor disposed within the cavity;
a conductive membrane disposed above the cavity and adapted to deflect towards the bottom conductor upon an applied pressure;
an insulating layer disposed between the conductive membrane and the bottom conductor; and
a switching element adapted to activate upon electrical communication between the conductive membrane and the bottom conductor.
2. The pressure switch assembly of claim 1, wherein the conductive membrane is made from carbon nanotubes.
3. The pressure switch assembly of claim 1, wherein the conductive membrane is made from graphene.
4. The pressure switch assembly of claim 1, further comprising an insulating layer disposed on the surface of the semiconductor substrate.
5. The pressure switch assembly of claim 4, further comprising a top conductor pad disposed on the insulating layer.
6. The pressure switch assembly of claim 1, wherein the insulating layer disposed between the conductive membrane and the bottom conductor is elastic.
7. The pressure switch assembly of claim 1, wherein the insulating layer disposed between the conductive membrane and the bottom conductor is sufficiently thin to allow electron tunneling between the conductive membrane and the bottom conductor.
8. The pressure switch assembly of claim 7, wherein the insulating layer disposed between the conductive membrane and the bottom conductor is made of parylene.
9. The pressure switch assembly of claim 1, further comprising an isolation diaphragm encapsulating the conductive membrane.
10. The pressure switch assembly of claim 9, wherein the isolation diaphragm is made of metal.
11. The pressure switch assembly of claim 9, further comprising an incompressible liquid disposed between the isolation diaphragm and the conductive membrane.
12. The pressure switch assembly of claim 11, wherein the incompressible liquid comprises molecules having sizes that are too large to penetrate the membrane.
13. The pressure switch assembly of claim 1, wherein the cavity has a shape that is substantially rectangular.
14. The pressure switch assembly of claim 1, wherein the cavity has a shape that is substantially circular.
15. A method of indicating whether a pressure exerted by a medium is above a certain threshold pressure comprising:
applying the pressure to a conductive membrane suspended across a cavity, wherein the cavity has a cavity bottom and the pressure causes the conductive membrane to deflect toward the cavity bottom;
creating an electrical potential difference between the conductive membrane and the cavity bottom; and
activating a load when a current flows between the conductive membrane and the cavity bottom;
wherein a substantial increase in the current indicates the pressure is above the threshold pressure.
16. The method of claim 15, wherein the substantial increase in the current is an exponential increase.
17. The method of claim 15, further comprising reversing a polarity of the electrical potential difference to counteract van der Waals’ forces between the conductive membrane and the cavity bottom.
18. The method of claim 15, wherein applying the pressure to a conductive membrane further comprises physically isolating the conductive membrane from the medium.
19. The method of claim 18, wherein physically isolating the conductive membrane from the medium means transferring the pressure to the membrane via an isolation diaphragm and an incompressible liquid.
20. The method of claim 15, further comprising setting the threshold pressure by adjusting a distance between the conductive membrane and the cavity bottom.
21. A method of manufacturing a pressure switch comprising:
providing a substrate;
fabricating a cavity within the substrate wherein the cavity has a cavity bottom;
depositing a conductive material on the cavity bottom;
electrically isolating the conductive material on the cavity bottom;
disposing a conductive membrane across the cavity; and
defining contact pads on top of the conductive membrane;
wherein the depth and geometry of the cavity correspond to a desired threshold pressure of the pressure switch.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of making a product, comprising:
filling a hole defined in a body with Zn\u2014Al alloy in a molten state, said Zn\u2014Al alloy providing a conductor made of the Zn\u2014Al allow in a solid state at least partially exposed on a surface of the body;
forming a wiring on the surface of the body, the wiring connected to the conductor, and
applying heat at least to the conductor and the wiring such that the conductor diffuses into the wiring.
2. The method according to claim 1, wherein the Zn\u2014Al alloy contains aluminum at a content equal to or smaller than 1.0 weight %.
3. The method according to claim 1, wherein the Zn\u2014Al alloy contains aluminum at a content equal to or smaller than 20.0 weight %.
4. The method according to claim 1, wherein said conductor fills a through hole penetrating through the body.
5. The method according to claim 4, wherein an aspect ratio of the through hole is set equal to or larger than 3.
6. The method according to claim 1, wherein the body is made of glass, silicon or ceramic.
7. The method according to claim 1, wherein the body is a glass substrate, a silicon substrate or a ceramic substrate.
8. The method according to claim 1, wherein the wiring is made of aluminum or copper.
9. The method according to claim 1, wherein the wiring is a wiring pattern located on a surface of the body.
10. The method according to claim 1, wherein the wiring is made of aluminum.
11. A method of making a product, comprising:
filling a hold defined in a body with Zn\u2014Al alloy in a molten state, said Zn\u2014Al alloy providing a conductor made of the Zn\u2014Al alloy in a solid state at least partially exposed on a surface of the body; and
forming a wiring on the surface of the body in an oxygen-free atmosphere using a radio-frequency (RF) plasma, the wiring connected to the conductor.
12. The method according to claim 11, wherein the wiring is made of aluminum.