All The Claims

1. A band for repair of spinal disorders, the band comprising: a flexible biocompatible osteogenic band comprising a plurality of elongated sections, the band having a first end and second end wherein the first end of the biocompatible osteogenic band is configured for affixation to one surface of a first vertebra and the second end of the biocompatible osteogenic band is configured for affixation to a corresponding surface of a second vertebra to maintain the joint formed by the adjacent vertebrae under tension; and
wherein the plurality of elongated sections have a configuration selected from the group consisting of braided, woven, a single twisted bundle, a helix, and combinations thereof.
2. The band of claim 1, wherein at least one of the elongated sections comprises bone.
3. The band of claim 2, wherein the at least one elongated section comprises cortical bone.
4. The band of claim 2, wherein the at least one elongated section comprises bone selected from the group consisting of autogenetic bone, allogeneic bone and xenogeneic bone.
5. The band of claim 2, wherein the at least one of the elongated section is demineralized.
6. The band of claim 5, wherein the at least one elongated section is chemically cross linked.
7. The band of claim 5, wherein the at least one of the elongated section is segmentally demineralized.
8. The band of claim 1, wherein at least one of the elongated sections comprises a synthetic biocompatible polymer or copolymer wherein the polymer or copolymer has been rendered ostegogenic.
9. The band of claim 8, wherein the biocompatible polymer is chosen from the group consisting of poly(lactic), polyglocolides, and poli(epsilon-caprolactone).
10. The band of claim 1, wherein at least one of the elongated sections comprises tendon tissue wherein the tendon tissue has been rendered osteogenic.
11. The band of claim 1, wherein at least one of the elongated sections comprises ligament tissue wherein the ligament tissue has been rendered osteogenic.
12. The band of claim 1, wherein at least one of the elongated sections comprises collagen tissue wherein the collagen tissue has been rendered osteogenic.
13. The band of claim 1, wherein at least one of the elongated sections comprises submucosa of the intestine wherein the submucosa has been rendered osteogenic.
14. The band of claim 1, wherein the biocompatible osteogenic band further comprises one or more substances selected from the group consisting of an antiviral agent, antimicrobial agent, antibiotic agent, biocidalbiostatic sugar, amino acid, peptide, vitamin, inorganic element, protein synthesis cofactor, hormone, endocrine tissue, synthesizer, enzyme, polymer-cell scaffold with parenchymal cells, angiogenic drug, collagen lattice, antigenic agent, cytoskeletal agent, cartilage fragment, chondrocytes, bone marrow cells, mesenchymal stem cells, natural extract, genetically engineered living cells, tissue transplant, demineralized bone powder, DNA, bioadhesive, bone morphogenic protein, osteoinductive factor, fibronectin, transforming growth factor-beta, endothelial cell growth factor, cementum attachment extracts, ketaserin, insulin-like growth factor, platelet derived growth factor, epidermal growth factor, interleukin, human alphathrombin, fibroblast growth factor, periodontal ligament chemotactic factor, growth hormone, bone digester, antitumor agent, immuno-suppressant, permeation enhancer and nucleic acid.
15. The band of claim 1, wherein the biocompatible osteogenic band has a dimension between about 1 cm and about 1 meter in length, between 2 mm and about 30 mm in thickness, and between about 2 mm and about 30 mm in width.
16. The band of claim 1, wherein the helix comprises a plurality of elongated sections of bone bundled to form two or more bundles of multi-bone sections and wherein the multi-bone sections are wrapped to form a two or more bundle helix.
17. The band of claim 1, wherein at least one of the first and second ends is sealed with a polymer.
18. The band of claim 1, wherein at least one of the first end or the second end is threaded.
19. The band of claim 1, wherein at least one of the first end or the second end comprises an attachment hole.
20. The band of claim 1, wherein at least one of the first end or the second end comprises a loop formed by the plurality of elongated sections.
21. A biocompatible osteogenic band for repair or spinal disorders, the band comprising: a demineralized bone core; and a weave of bioabsorable fibers surrounding the core; wherein the band comprises a first end and a second end and the first end of the biocompatible osteogenic band is configured for affixation to one surface of a first vertebra and the second end of the biocompatible osteogenic band is configured for affixation to a corresponding surface of a second vertebra to maintain the joint formed by the adjacent vertebrae under tension.
22. The band of claim 21, wherein the bioabsorable fibers comprises a synthetic biocompatible polymer wherein the synthetic biocompatible polymer is rendered osteogenic.
23. The band of claim 22, wherein the biocompatible polymer is chosen from the group consisting of poly(lactic), polyglocolides, and poli(epsilon-caprolactone).
24. The band of claim 21, wherein the weave of bioabsorbable fibers comprises demineralized bone strips.
25. The band of claim 21, wherein the core comprises a monolithic bone.
26. The band of claim 21, wherein the biocompatible osteogenic band further comprises one or more substances selected from the group consisting of an antiviral agent, antimicrobial agent, antibiotic agent, biocidalbiostatic sugar, amino acid, peptide, vitamin, inorganic element, protein synthesis cofactor, hormone, endocrine tissue, synthesizer, enzyme, polymer-cell scaffold with parenchymal cells, angiogenic drug, collagen lattice, antigenic agent, cytoskeletal agent, cartilage fragment, chondrocytes, bone marrow cells, mesenchymal stem cells, natural extract, genetically engineered living cells , tissue transplant, demineralized bone powder, DNA, bioadhesive, bone morphogenic protein, osteoinductive factor, fibronectin, transforming growth factor-beta, endothelial cell growth factor, cementum attachment extracts ketaserin, insulin-like growth factor, platelet derived growth factor, epidermal growth factor, interleukin, human alphathrombin, fibroblast growth factor, periodontal ligament chemotactic factor, growth hormone, bone digester, antifumor agent, immuno-suppressant, permeation enhancer and nucleic acid.
27. The band of claim 21, wherein the demineralized bone core is segmentally demineralized.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method comprising:
detecting an event;
determining whether the event satisfies a condition for changing a schedule associated with a skill of a call agent of a call center;
updating the schedule in a skills database when the event satisfies the condition for changing the schedule associated with the skill of the call agent of the call center; and
sending a message, based on the updated schedule associated with the skill of the call agent, to an automatic call distribution (ACD) device to add the skill of the call agent to a list of skills of the call agent,
wherein the list of skills is in a database of the ACD device.
2. The method of claim 1, wherein sending the message includes:
invoking an application programming interface (API) for adding the skill to the list of skills of the call agent.
3. The method of claim 2, wherein invoking the API includes:
sending a simple object access protocol (SOAP) message over hypertext transfer protocol (HTTP).
4. The method of claim 1, further comprising:
receiving, by the ACD device, a call that requires the skill for handling the call during scheduled times of the skill;
selecting, by the ACD device, the call agent, based on the skill of the call agent, to handle the call; and
forwarding the call to the call agent.
5. The method of claim 4, wherein the call includes:
a Session Initiation Protocol (SIP) call;
a H.323 call;
a videoconference call, or
a videophone call.
6. The method of claim 4, wherein the call includes:
a text messaging call; or
a voice-over-Internet Protocol (VoIP) call.
7. The method of claim 1, wherein determining whether the event satisfies the condition for changing the schedule includes:
evaluating a policy or a rule that specifies conditions and actions.
8. The method of claim 1, wherein the event includes at least one of:
a change in employment status of the call agent; or
a change in work schedule of the call agent.
9. The method of claim 8, wherein the change in employment status includes:
a promotion of the call agent;
a termination of the call agent;
an employment of the call agent; or
a transfer of the call agent from one department to another department.
10. The method of claim 1, further comprising:
recording, in the skills database, whether the skill of the call agent is available to the ACD device.
11. The method of claim 1, wherein detecting the event includes at least one of:
polling another device or component to detect the event; or
receiving a notification of the event.
12. A device comprising:
a communication interface to receive messages;
a skills database that includes a skills schedule table; and
one or more processors to:
detect an event based on one of the messages;
determine whether the event satisfies a condition for changing a schedule associated with a skill of a call agent of a call center;
modify the schedule in the skills schedule table when the event satisfies the condition for changing the schedule associated with the skill of the call agent; and
send a request, based on the modified schedule associated with the skill of the call agent, to an automatic call distribution (ACD) device to change the skill of the call agent from a database of the ACD device.
13. The device of claim 12, wherein the request includes a call message that invokes an application programming interface (API) for changing the skill.
14. The device of claim 13, wherein the call message includes:
a simple object access protocol (SOAP) message over a hypertext transfer protocol (HTTP).
15. The device of claim 12, wherein the skills database further includes a table of rules, one or more of the rules specifying conditions and actions, and wherein when determining whether the event satisfies the condition for changing the schedule, the one or more processors are further configured to:
evaluate the conditions of the one or more rules.
16. The device of claim 12, wherein the event includes at least one of:
a change in employment status of the call agent; or
a change in work schedule of the call agent.
17. The device of claim 12, wherein the one or more processors are further configured to record, in the skills database, availability status of the skill to the ACD device.
18. A system comprising:
a skills database that includes a skills schedule table;
an automatic call distribution (ACD) device for forwarding a call to one of call agents in a call center based on skills of the call agents and requirements of the call; and
a device to:
detect an event;
determine whether the event satisfies a condition for changing a schedule associated with a skill of one of the call agents;
modify the schedule in the skills schedule table when the event satisfies the condition for changing the schedule associated with the skill of the one of the call agents; and
send a request, based on the modified schedule associated with the skill of the one of the call agents, to the ACD device to change the skill of the call agent from a database of the ACD device.
19. The system of claim 18, wherein the call includes:
a Session Initiation Protocol (SIP) call;
a H.323 call;
a videoconference call, or
a videophone call.
20. The system of claim 18, wherein the device is further configured to:
poll another device or component to detect the event; or
receive a notification of the event.

1. A system for calculating the remaining capacity of an energy storage device, the system comprising:
voltage detection means for detecting the terminal voltage of the energy storage device;
current detection means for detecting the charge and discharge current of the energy storage device;
first calculation means for integrating the charge and discharge current detected by the current detection means to calculate a first remaining capacity;
second calculation means for estimating the open circuit voltage of the energy storage device on the basis of the terminal voltage detected by the voltage detection means, the charge and discharge current detected by the current detection means, and the impedance of the equivalent circuit of the energy storage device to calculate a second remaining capacity based on the estimated open circuit voltage; and
third calculation means for weighting the first and second remaining capacities with a weight determined depending on the operating conditions of the energy storage device and combining the weighted remaining capacities into the remaining capacity of the energy storage device.
2. The system according to claim 1, wherein the third calculation means determines the weight on the basis of the moving average of the charge and discharge current detected by the current detection means.
3. The system according to claim 1, wherein the second calculation means obtains the second remaining capacity on the basis of the open circuit voltage of the energy storage device and the temperature thereof in accordance with the electrochemical relationship therebetween in the energy storage device.
4. The system according to claim 2, wherein the second calculation means obtains the second remaining capacity on the basis of the open circuit voltage of the energy storage device and the temperature thereof in accordance with the electrochemical relationship therebetween in the energy storage device.
5. The system according to claim 1, wherein the second calculation means calculates the impedance on the basis of the moving average of the charge and discharge current detected by the current detection means and the temperature of the energy storage device.
6. The system according to claim 2, wherein the second calculation means calculates the impedance on the basis of the moving average of the charge and discharge current detected by the current detection means and the temperature of the energy storage device.
7. The system according to claim 3, wherein the second calculation means calculates the impedance on the basis of the moving average of the charge and discharge current detected by the current detection means and the temperature of the energy storage device.
8. The system according to claim 4, wherein the second calculation means calculates the impedance on the basis of the moving average of the charge and discharge current detected by the current detection means and the temperature of the energy storage device.
9. The system according to claim 1, wherein the first calculation means integrates the charge and discharge current using the remaining capacity, combined by the third calculation means, as a base value to obtain the first remaining capacity.
10. The system according to claim 2, wherein the first calculation means integrates the charge and discharge current using the remaining capacity, combined by the third calculation means, as a base value to obtain the first remaining capacity.
11. The system according to claim 3, wherein the first calculation means integrates the charge and discharge current using the remaining capacity, combined by the third calculation means, as a base value to obtain the first remaining capacity.
12. The system according to claim 4, wherein the first calculation means integrates the charge and discharge current using the remaining capacity, combined by the third calculation means, as a base value to obtain the first remaining capacity.
13. The system according to claim 5, wherein the first calculation means integrates the charge and discharge current using the remaining capacity, combined by the third calculation means, as a base value to obtain the first remaining capacity.
14. The system according to claim 6, wherein the first calculation means integrates the charge and discharge current using the remaining capacity, combined by the third calculation means, as a base value to obtain the first remaining capacity.
15. The system according to claim 7, wherein the first calculation means integrates the charge and discharge current using the remaining capacity, combined by the third calculation means, as a base value to obtain the first remaining capacity.
16. The system according to claim 8, wherein the first calculation means integrates the charge and discharge current using the remaining capacity, combined by the third calculation means, as a base value to obtain the first remaining capacity.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of forming a phase change material, comprising:
forming a chalcogenide compound on a substrate; and
simultaneously applying a bias voltage to the substrate to alter a stoichiometry of the chalcogenide compound.
2. The method of claim 1, wherein forming a chalcogenide compound on a substrate comprises depositing the chalcogenide compound by physical vapor deposition.
3. The method of claim 1, wherein forming a chalcogenide compound on a substrate comprises forming the chalcogenide compound having an empirical formula of GexSb100\u2212(x+y)Tey, wherein x ranges from approximately 5 atomic percent to approximately 60 atomic percent and y ranges from approximately 20 atomic percent to approximately 70 atomic percent.
4. The method of claim 1, wherein forming a chalcogenide compound on a substrate comprises forming the chalcogenide compound comprising a chalcogen ion selected from the group consisting of oxygen, sulfur, selenium, tellurium, and polonium and at least one electropositive element selected from the group consisting of nitrogen, silicon, nickel, gallium, germanium, arsenic, silver, indium, tin, antimony, gold, lead, and bismuth.
5. The method of claim 4, wherein simultaneously applying a bias voltage to the substrate comprises removing at least a portion of the chalcogen ion from the chalcogenide compound.
6. The method of claim 1, wherein simultaneously applying a bias voltage to the substrate comprises applying a constant bias voltage to the substrate.
7. The method of claim 1, wherein simultaneously applying a bias voltage to the substrate comprises applying a stepwise bias voltage to the substrate.
8. The method of claim 1, wherein simultaneously applying a bias voltage to the substrate to alter the stoichiometry of the chalcogenide compound comprises producing a phase change material comprising less chalcogen ion than the chalcogenide compound.
9. A method of forming a phase change material, comprising:
positioning a substrate and a deposition target in a deposition chamber, the deposition target comprising a first stoichiometry;
generating a plasma in the deposition chamber;
forming a phase change material on the substrate, the phase change material comprising a stoichiometry substantially similar to the first stoichiometry of the deposition target; and
applying a bias voltage to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry.
10. The method of claim 9, wherein generating a plasma in the deposition chamber comprises generating a helium, neon, argon, krypton, xenon, or radon plasma.
11. The method of claim 10, further comprising including nitrogen in the plasma.
12. The method of claim 9, wherein forming a phase change material on the substrate comprises forming a crystalline phase change material on the substrate.
13. The method of claim 9, wherein applying a bias voltage to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry comprises applying a bias voltage of from approximately 25 W to approximately 200 W to the substrate.
14. The method of claim 9, wherein applying a bias voltage to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry comprises applying the bias voltage to the substrate to convert the phase change material to a different stoichiometry than the deposition target.
15. The method of claim 9, wherein applying a bias voltage to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry comprises forming a substantially homogeneous phase change material.
16. The method of claim 9, wherein applying a bias voltage to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry comprises forming a heterogeneous phase change material.
17. The method of claim 9, wherein forming a phase change material on the substrate and applying a bias voltage to the substrate to convert the stoichiometry of the phase change material to a second stoichiometry comprises substantially simultaneously forming the phase change material on the substrate and applying the bias voltage to the substrate.
18. A method of forming a phase change material, comprising:
forming a chalcogenide compound on a substrate, the chalcogenide compound comprising a different stoichiometry than a stoichiometry of a deposition target from which the chalcogenide compound is formed.
19. The method of claim 18, wherein forming a chalcogenide compound on a substrate comprises depositing the chalcogenide compound by physical vapor deposition.
20. The method of claim 18, wherein forming a chalcogenide compound on a substrate comprises forming the chalcogenide compound comprising a reduced chalcogen content compared to a chalcogen content of the deposition target.