All The Claims

1. A method for manufacturing a light emitting device of a light-emitting device (LED), comprising:
(a) forming a buffer layer over an upper side of a substrate, wherein said substrate comprises sapphire, silicon carbide (SiC) and gallium nitride (GaN);
(b) forming an n-GaN based epitaxial layer over said buffer layer;
(c) forming an MQW layer over said n-GaN based epitaxial layer, wherein said MQW active layer comprises a material so that said MQW active layer emits a light with a wavelength comprising 380 nm to 600 nm in response to an applied electric power on said light-emitting structure;
(d) forming a p-type distributed Brag reflector (DBR) over said MQW active layer;
(e) forming a p-GaN based layer over said p-type DBR, etching away a portion of said n-GaN based layer, said MQW active layer, said p-type DBR and said p-GaN based layer whereby said n-GaN based layer has an exposing region and disposing an n-type electrode over said exposing region and a p-type electrode over said remaining p-GaN based layer after said etching; and
(f) coating a metal reflector over a bottom side of said substrate.
2. The method as in claim 1, wherein a step of (e\u2032) is added in said step (e) after said forming and prior to said disposition of said n-type and said p-type electrodes, said step (e\u2032) is forming a transparent contact layer (TCL) having an exposing side, wherein said TCL comprises NiAu and other transparent and conductive layers with a suitable thickness and being transmittable with a light having a wavelength ranging from 380 nm to 600 nm.
3. The method as in claim 2, wherein said p-type DBR comprises AlGaNGaN.
4. A method for manufacturing a light-emitting structure of a light-emitting device (LED), which comprises the steps of:
(a) forming a buffer layer over an upper side of a substrate wherein said substrate comprises sapphire, silicon carbide (SiC), silicon (Si) and gallium nitride (GaN);
(b) forming an n-type DBR on said buffer layer;
(c) forming an n-GaN based layer over said n-type DBR;
(d) forming an MQW active layer over said n-GaN based layer, wherein said MQW active layer comprises a material so that said MQW active layer emits a light with a wavelength of 380\u2013600 nm upon an applied electric power;
(e) forming a p-type distributed Brag reflector (DBR) over said MQW active layer; and
(f) forming a p-GaN based layer over said p-type DBR and etching away a portion of said p-GaN based layer, said p-type DBR, said MQW active layer and said n-GaN based layer whereby said n-GaN based layer has an exposing region and disposing an-type electrode over said exposing region of said n-GaN based layer and disposing a p-type electrode over said p-GaN based layer,
wherein the light-emitting structure between the n-type DBR and the p-type DBR includes the n-GaN based layer formed directly on the n-type DBR, the MQW active layer formed directly on the n-GaN based layer, and the D-type DBR forming the formed directly on the MQW active layer.
5. The method according to claim 4, wherein a step of (f\u2032) is added in said step (f) after the forming and prior to the disposition of said n-type and said p-type electrodes, said step (f\u2032) is forming a transparent contact layer (TCL) with a suitable thickness and being transparent to a light with a wavelength of 380\u2013600 nm over said etched p-GaN layer, wherein said TCL having an exposing side.
6. The method according to claim 4, wherein said n-type DBR has a reflectance of greater than 90% and said p-type DBR has a reflectance of 50\u201380%.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of inputting light into a core layer of a multimode optical waveguide,
the optical waveguide including:
an under-cladding layer; and
the core layer formed so that at least a part of the core layer is adjacent to the under-cladding layer,

the method comprising inputting the light into the core layer so that:
a spot of the light at an input port-side end surface of the multimode optical waveguide completely includes an input port of the core layer;
a spot area of the light at the input port-side end surface of the multimode optical waveguide is twice or more of an area of the input port of the core layer; and
an angle of input range of the light at an input port end surface of the core layer is from 10\xb0 to 30\xb0.
2. The method according to claim 1, wherein a spot diameter of the light at the input port-side end surface of the multimode optical waveguide is 100 \u03bcm or more.
3. An SPR sensor measurement method, comprising inputting light into the core layer of an SPR sensor cell through use of the method of claim 1,
the SPR sensor cell including:
the multimode optical waveguide including:
the under-cladding layer; and
the core layer formed so that at least a part of the core layer is adjacent to the under-cladding layer; and

a metal layer covering the core layer.
4. An SPR sensor, comprising:
an SPR sensor cell including:
a multimode optical waveguide including:
an under-cladding layer; and
a core layer formed so that at least a part of the core layer is adjacent to the under-cladding layer; and

a metal layer covering the core layer; and

a light source,
the light source being arranged so that, at an input port-side end surface of the multimode optical waveguide, light output from the light source forms a spot that completely includes an input port of the core layer and has an area that is twice or more of an area of the input port of the core layer, and so that the light is input into an input port end surface of the core layer in an angle of input range from 10\xb0 to 30\xb0.
5. An SPR sensor, comprising:
an SPR sensor cell including:
a multimode optical waveguide including:
an under-cladding layer; and
a core layer formed so that at least a part of the core layer is adjacent to the under-cladding layer; and

a metal layer covering the core layer;

a light source; and
an optical component for causing light output from the light source to form, at an input port-side end surface of the multimode optical waveguide, a spot that completely includes an input port of the core layer and has an area that is twice or more of an area of the input port of the core layer, and inputting the light into an input port end surface of the core layer in an angle of input range from 10\xb0 to 30\xb0.

1. A thermal solar panel comprising:
at least one heat collector to receive solar rays;
a housing for the heat collector, the housing being delimited by walls surrounding the heat collector, at least one of the walls including at least one slit for passage of the solar rays;
at least one reflective area arranged facing the heat collector, the reflective area being suited to reflect thermal radiation emitted by the heat collector;
at least one reflective strip, arranged outside of the housing, each of the at least one reflective strip being arranged facing one respective slit so as to focus radiation received towards the respective slit; and
a plurality of elongated reflective elements, each elongated reflective element including a flat base and two concave surfaces so as to define a perceptively triangular cross section, the elongated reflective elements being arranged side by side such that the flat bases are coplanar and, together, define the wall of the housing including the at least one slit, each slit being formed by a space between two adjacent elongated reflective elements, and each concave surface being arranged facing a respective reflective strip so that radiation reflected by a concave surface is focused towards the corresponding reflective strip.
2. The thermal solar panel as recited in claim 1 wherein the at least one slit includes a plurality of slits.
3. The thermal solar panel as recited in claim 1 wherein each pair of adjacent reflective elements defines a primary parabolic mirror having the slit in a center,
the reflective strip arranged to face the pair of reflective elements forming a secondary hyperbolic convex mirror, and
the reflective elements and the reflective strip being arranged such that the optical axes of the primary and secondary mirrors coincide, and a focal line of the primary parabolic mirror coinciding with that of the hyperbolic mirror.
4. The thermal solar panel as recited in claim 1 wherein each pair of adjacent reflective elements defines a primary parabolic mirror having the slit in a centre,
the reflective strip arranged to face the pair of reflective elements forming a secondary elliptical concave mirror, and
the reflective elements and the reflective strip being arranged such that the optical axes of the primary and secondary mirrors coincide, and a focal line of the primary parabolic mirror coincides with that of the elliptical mirror.
5. The thermal solar panel as recited in claim 1 wherein each wall of the housing has at least one reflective area arranged to face the heat collector.
6. The thermal solar panel as recited in claim 5 wherein the reflective area extends over an entirety of the respective wall.
7. The thermal solar panel as recited in claim 1 wherein the housing has thermal insulation spacers arranged between the heat collector and at least one of the walls of the housing.
8. The thermal solar panel as recited in claim 1 wherein the panel is generally plane-parallel in shape and defined by lateral faces, a lower face, and an upper face delimiting together an inner space in which the housing is arranged, such that:
a lower wall of the walls of the housing is formed by the lower face;
lateral walls of the walls is formed by the lateral faces; and
the wall comprising the at least one slit being an upper wall of the walls and arranged between the upper and lower faces of the panel, parallel to the upper and lower faces,
the upper face being formed by a transparent plate.
9. The thermal solar panel as recited in claim 8 wherein the upper wall is made of glass.
10. The thermal solar panel as recited in claim 1 further comprising a heat transporter, comprising:
a heat exchanger between the heat collector and a coolant housed in the heat collector;
at least one tubular element transferring the coolant and linking the heat exchanger with the outside of the solar panel, passing through an orifice placed in at least one of the walls of the housing; and
at least one airtight, thermally insulating joint between the tubular element and the orifice.
11. The thermal solar panel as recited in claim 1 wherein the heat collector includes a wrapping capable of absorbing the solar andor thermal radiation.
12. The thermal solar panel as recited in claim 11 wherein the wrapping is metallic and enveloping a phase-changing material.
13. The thermal solar panel as recited in claim 12 wherein the phase-changing material is chosen from anthraquinone or aluminium.
14. The thermal solar panel as recited in claim 1 wherein the heat collector is formed by a tubular element, in which a coolant circulates.
15. The thermal solar panel as recited in claim 14 wherein the tubular element is provided with a highly heat-absorbent external coating with low heat emission.
16. The thermal solar panel as recited in claim 14 wherein a reflective area is formed by a tubular reflection element, coaxially surrounding the tubular heat collector, the tubular reflection element being formed by an insulating material having an internal surface that is treated to permit reflection of residual thermal radiation emitted by the tubular heat collection element, and including on its upper generator a further slit so as to let incident thermal radiation pass through.
17. The thermal solar panel as recited in claim 16 wherein the internal surface is treated with metal.
18. The thermal solar panel as recited in claim 1 further comprising at least one thermal fluid introduction or evacuation element connected to all of the heat collectors, housed within a surrounding wall laterally extending the panel, delimited by walls made of thermally insulating material.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A resonator structure for a wireless power transfer system, comprising:
resonators, which are to transfer wireless power; and
a dielectric substance, which includes at least one exposure region formed on the dielectric substance to fix the resonators in a covered shape and to selectively expose parts of the resonators.
2. The resonator structure of claim 1, wherein the resonator has a circular spiral structure.
3. The resonator structure, of claim 2, wherein the resonator is a conductor plate having a predetermined line width and line thickness.
4. The resonator structure of claim 2, wherein the dielectric substance has a center cavity which is formed in a center region of the spiral structure.
5. The resonator structure of claim 1, wherein the resonator has a rectangular spiral structure.
6. The resonator structure of claim 5, wherein the resonator is a conductor plate having a predetermined line width and line thickness.
7. A resonator structure for a wireless power transfer system, comprising:
resonators, which are in a form of a rectangle to transfer wireless power; and
a dielectric substance, which includes a plurality of dielectric branches that extend in outward directions based on a center of the rectangle to fix each part of the resonators in a covered form.
8. The resonator structure of claim 7, wherein the plurality of dielectric branches include four dielectric branches which extend in four directions based on the center.
9. The resonator structure of claim 7, wherein the resonator is a conductor plate of a spiral structure having a predetermined line width and line thickness.
10. A resonator structure for a wireless power transfer system, comprising:
resonators, which are in a form of circles to transfer wireless power; and
a dielectric substance, which includes a plurality of dielectric branches that extend in diametrically opposed directions based on a center of the circle to fix each part of the resonators in a covered shape.
11. The resonator structure of claim 10, wherein the dielectric substance has a circular center cavity which is formed in a center region of the dielectric branches in the circle.
12. The resonator structure of claim 10, wherein the plurality of dielectric branches include eight dielectric branches which extend in eight directions based on the center.
13. The resonator structure of claim 7, wherein the resonator is a conductor plate of a spiral structure having a predetermined line width and line thickness.