1. A propellant holder for being releasably mounted in a setting tool having a receptacle (15) for receiving the propellant holder (20) and a data communication interface (31) provided in a predetermined region of the receptacle (15), the propellant holder comprising:
a housing (21) having an interior space (22) for receiving propellant (23);
a data storage identification unit (40) affixed to the housing (21) and in which an actual propellant supply level (27) is stored to be read-out by the data communication interface (31); and
guide means (26) cooperating with respective guide means (126) provided in the predetermined region of the receptacle (15) to enable the data communication interface (31) to read-out the propellant supply level (27) stored in the data storage identification unit (40);
wherein the guide means (126) secures the propellant holder (20) in a predetermined position.
2. The propellant holder of claim 1, wherein the guide means (26) cooperates with the respective guide means (126) provided in the predetermined region of the receptacle (15) for securing the propellant holder (20) in the predetermined position in the predetermined region of the receptacle (15) to enable the data communication interface (31) to read-out the propellant supply level (27) stored in the data storage identification unit (40).
3. An explosion-driven setting tool, comprising:
a setting mechanism (12) driven by a propellant (23);
ignition means (18) for igniting the propellant (23);
a receptacle (15) for receiving a propellant holder (20);
a display (50) for displaying a propellant supply level (27) in the propellant holder (20);
a data communication interface (31) for receiving data from and transmitting data to a data storage identification unit (40) and located in a predetermined region of the receptacle (15), the receptacle (15) having guide means (126) cooperating with guide means (26) of the propellant holder to enable the data communication interface (31) to read-out the propellant supply level (27) stored in the data storage identification unit (40) of the propellant holder (20); and
a data processing unit (30) operationally connected with the data communication interface (31) and the display (50);
wherein the guide means (126) secures the propellant holder (20) in a predetermined position.
4. An explosion-driven setting tool, comprising:
a setting mechanism (12) driven by a propellant (23);
ignition means (18) for igniting the propellant (23);
a receptacle (15) for receiving a propellant holder (20), with the propellant holder (2) having a housing (21) with an interior space (22) for receiving propellant (23), and a data storage identification unit (40) in which a propellant supply level (27) is stored for being read-out;
a display (50) for displaying the propellant supply level (27);
a data communication interface (31) for receiving identification data read-out from the data storage identification unit (40) and provided in a predetermined region of the receptacle (15), the receptacle (15) having guide means (126) cooperating with guide means (26) of the propellant holder to enable the data communication interface (31) to read-out the propellant supply level (27) stored in the data storage identification unit (40); and
a data processing unit (30) for receiving the identification data from the data communication interface (31) and connected with the display (50) for communicating the propellant supply level (27) thereto;
wherein the guide means (126) secures the propellant holder (20) in a predetermined position.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.
1. A method of reducing an aspect ratio of a trench, comprising the steps of:
forming a trench in a substrate;
using HDP-CVD to form a conformal first oxide layer on a surface of the trench;
forming a conformal first nitride layer on the first oxide layer;
removing part of the first nitride layer to cause the first nitride layer to be lower than a top surface of the substrate; and
using a BOE solution to remove the first nitride layer and part of the first oxide layer, thus forming a remaining first oxide layer on the surface of the trench at a lower portion.
2. The method according to claim 1, further comprising at least one cycle of the steps of:
using HDP-CVD to form a conformal second oxide layer on the remaining first oxide layer and the surface of the trench;
forming a conformal second nitride layer on the second oxide layer;
removing part of the second nitride layer to cause the second nitride layer to be lower than a top surface of the substrate; and
using a BOE solution to remove the second nitride layer and part of the second oxide layer, thus forming a remaining second oxide layer on the remaining first oxide layer.
3. A method of reducing an aspect ratio of a trench, comprising the steps of:
(a) providing a substrate;
(b) forming a trench in the substrate;
(c) using HDP-CVD to form a conformal first oxide layer on a surface of the trench;
(d) forming a conformal first nitride layer on the first oxide layer;
(e) forming a first photoresist layer in part of the trench to cover part of the first nitride layer, wherein the first photoresist layer is lower than a top surface of the substrate;
(f) using the first photoresist layer as a mask, removing part of the first nitride layer;
(g) removing the first photoresist layer; and
(h) using a BOE solution to remove the first nitride layer and part of the first oxide layer, thus forming a remaining first oxide layer on the surface of the trench at a lower portion.
4. The method according to claim 3, further comprising at least one cycle of the steps of:
(i) using HDP-CVD to form a conformal second oxide layer on the remaining first oxide layer and the surface of the trench;
(j) forming a conformal second nitride layer on the second oxide layer;
(k) forming a second photoresist layer in part of the trench to cover part of the second nitride layer, wherein the second photoresist layer is lower than a top surface of the substrate;
(l) using the second photoresist layer as a mask, removing part of the second nitride layer;
(m) removing the second photoresist layer; and
(n) using the BOE solution to remove the second nitride layer and part of the second oxide layer, thus forming a remaining second oxide layer on the remaining first oxide layer.
5. The method according to claim 4, wherein the second photoresist layer is at least 1000 \u212b lower than a top surface of the substrate.
6. The method according to claim 3, wherein the first photoresist layer is at least 1000 \u212b lower than a top surface of the substrate.
7. The method according to claim 3, wherein the formation of the trench comprises the steps of:
forming a shield layer on part of the substrate; and
using the shield layer as a mask, etching part of the substrate to define the trench therein.
8. The method according to claim 7, wherein the shield layer comprises a pad oxide layer and a silicon nitride layer.
9. The method according to claim 3, further comprising, prior to forming the first oxide layer, a step of:
forming a conformal linear layer on the surface of the trench.
10. The method according to claim 3, wherein the first oxide layer is a SiO2 layer.
11. The method according to claim 3, wherein the nitride layer is a Si3N4 layer formed by LP-CVD.
12. The method according to claim 3, wherein an etching rate of the first oxide layer with the BOE solution is 280\u02dc320 \u212bmin, and an etching rate of the first nitride layer with the BOE solution is 8\u02dc12 \u212bmin.
13. The method according to claim 12, wherein a thickness of the first oxide layer is 200\u02dc300 \u212b, and a thickness of the first nitride layer is 40\u02dc50 \u212b.
14. A method of reducing an aspect ratio of a trench, comprising the steps of:
(a) providing a silicon substrate;
(b) forming a trench in the silicon substrate
(c) using HDP-CVD to form a conformal first oxide layer on a surface of the trench, wherein a thickness of the first oxide layer is 200\u02dc300 \u212b;
(d) forming a conformal first nitride layer on the first oxide layer, wherein a thickness of the first nitride layer is 40\u02dc50 \u212b;
(e) forming a first photoresist layer in part of the trench to cover part of the first nitride layer, wherein the first photoresist layer is at least 1000 \u212b lower than a top surface of the substrate;
(f) using the first photoresist layer as a mask, removing part of the first nitride layer;
(g) removing the first photoresist layer; and
(h) using a BOE solution to remove the first nitride layer and part of the first oxide layer, thus forming a remaining first oxide layer on the surface of the trench at a lower portion, wherein an etching rate of the first oxide layer with the BOE solution is 280\u02dc320 \u212bmin, and an etching rate of the first nitride layer with the BOE solution is 8\u02dc12 \u212bmin.
15. The method according to claim 14, further comprising at least one cycle of the steps of:
(i) using HDP-CVD to form a conformal second oxide layer on the remaining first oxide layer and the surface of the trench;
(j) forming a conformal second nitride layer on the second oxide layer;
(k) forming a second photoresist layer in part of the trench to cover part of the second nitride layer, wherein the second photoresist layer is at least 1000 \u212b lower than a top surface of the substrate;
(l) using the second photoresist layer as a mask, removing part of the second nitride layer;
(m) removing the second photoresist layer; and
(n) using the BOE solution to remove the second nitride layer and part of the second oxide layer, thus forming a remaining second oxide layer on the remaining first oxide layer.
16. The method according to claim 14, wherein the formation of the trench comprises the steps of:
forming a shield layer on part of the silicon substrate; and
using the shield layer as a mask, etching part of the silicon substrate to define the trench therein.
17. The method according to claim 16, wherein the shield layer comprises a pad oxide layer and a silicon nitride layer.
18. The method according to claim 14, further comprising, prior to forming the first oxide layer, a step of:
forming a conformal linear layer on the surface of the trench.
19. The method according to claim 14, wherein the first oxide layer is a SiO2 layer.
20. The method according to claim 14, wherein the nitride layer is a Si3N4 layer formed by LP-CVD.