1.-28. (canceled)
29. An electroluminescence generating device comprising:
a. a channel comprising at least one layer of an organic semiconductor material, said organic semiconductor material being a polycrystalline semiconductor-material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes, said channel being realized by one layer of organic semiconductor or by several coplanar layers of organic semiconductors;
b. an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer;
c. a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said hole electrode being able to inject holes in said channel, said electron electrode and said hole electrode being positioned in an horizontal plane along said channel;
d. a control electrode positioned on said first side or on a second side of said channel, said control electrode being suitable for controlling the charge injection, the current flow and the charge recombination between the electron electrode and the hole electrode;
whereby said electroluminescence generating device being able to emit light by applying an electrical potential difference between said electron electrode and said hole electrode, characterized in that at least one of said electron electrode and said hole electrode comprise at least one different material which is not comprised in the other one.
30. Device according to claim 29, further comprising a dielectric layer between said channel and said control electrode.
31. Device according to claim 30, wherein said dielectric layer comprises at least one material selected from the group consisting of silicon oxide, alumina, polyimide and polymethylmethacrylate.
32. Device according to claim 29, wherein said electron electrode comprises one or more elements selected from the group consisting of Au, Ca, Mg, Al, In, Perovskite Manganites (Re1-xAxMnO3).
33. Device according to claim 29, wherein said hole electrode comprises at least one material selected from the group consisting of Au, indium tin oxide, Cr, Cu, Fe, Ag, poly(3,4-ethylenedioxythiophene) combined with poly(styrene sulfonate), Perovskite Manganites (Re1-xAxMnO3).
34. Device according to claim 29, wherein said channel comprises at least one material selected from the group consisting of small molecule materials, polymers and metal complexes.
35. Device according to claim 34, wherein said channel comprises at least one material selected from the group consisting of tetracene, pentacene, perylenes, terthiophene, tetrathiophene, quinquethiophene, sexithiophene, bora-diazaindacene, polyphenylenevinylene, polyfluorene, polythiophene and porphyrins.
36. Device according to claim 29, wherein said poly-crystalline semiconductor material has a crystal grain size and said hole electrode and said electron electrode are spaced apart at a distance smaller than said crystal grain size.
37. Device according to claim 29, wherein said hole electrode and said electron electrode are spaced apart at a distance between 5 nm and 5 microns.
38. Device according to claim 29, wherein said electron electrode and said hole electrode have digitated structures comprising a regular repetition of a basic finger structure, and are positioned such that said basic finger structures of said basic finger structures of respectively hole and electron electrodes are alternating each other, and is characterised by two in-plane distances P and R between the basic finger structures.
39. Device according to claim 38 wherein said P and R are equal.
40. Device according to claim 29, wherein said control electrode is an injection control electrode, said injection control electrode being positioned on said second side of said channel whereby being suitable to facilitate the injection of charge carriers into said channel upon the application of an electrical potential difference between said control electrode and said hole electrode or an electron electrode.
41. Device according to claim 29, wherein said control electrode is a current control electrode, said current control electrode being positioned on said second side of said channel whereby being suitable for controlling the current of at least one type of charge carriers upon the application of an electrical potential difference between said control electrode and said electron andor hole electrode.
42. Device according to claim 29, wherein said channel is realized by several coplanar layers of organic semiconductors.
43. Device according to claim 29, further comprising optical confinement andor waveguiding layers on said first andor second side of said channel.
44. Device according to claim 29, further comprising optical resonating structures or cavities on said first andor second side of said channel.
45. Device according to claim 29, further comprising a flexible or rigid substrate.
46. A method for manufacturing a device according to claim 29, wherein said channel is formed by sublimation of small molecules.
47. Method according to claim 46, wherein said channel is formed by simultaneous sublimation of at least two moieties.
48. Method for manufacturing a device according to claim 29, wherein said channel is formed by solution processing of one or more soluble andor polymeric materials.
49. Method for manufacturing a device according to claim 29, wherein said channel is formed by a combination of sublimation and solution processing.
50. Method for manufacturing a device according to claim 29, wherein said channel is formed by thermal, chemical or physical treatment of pre-deposited organic semiconductors.
51. Method for manufacturing a device according to claim 29, wherein said channel is manufactured with printing techniques.
52. A method for generating electroluminescence using a device according to claim 29, by recombination of electrons and holes injected in said channel from said electron electrode and hole electrode.
53. Device according to claim 29, comprising at least two control electrodes.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.
1. A plant of soybean variety 01045749, wherein a sample of seed of said variety has been deposited under ATCC Accession No. ______.
2. A plant part of the plant of claim 1, wherein the plant part comprises at least one cell of said plant.
3. The plant part of claim 2, further defined as pollen, a meristem, a cell, or an ovule.
4. A seed of soybean variety 01045749, wherein a sample of seed of said variety has been deposited under ATCC Accession No. ______.
5. A method of producing soybean seed, wherein the method comprises crossing the plant of claim 1 with itself or a second soybean plant.
6. The method of claim 5, wherein the method is further defined as comprising crossing the plant of soybean variety 01045749 with a second, distinct soybean plant to produce an F1 hybrid soybean seed.
7. An F1 hybrid soybean seed produced by the method of claim 6.
8. An F1 hybrid soybean plant produced by growing the seed of claim 7.
9. A composition comprising the seed of claim 4 comprised in plant seed growth media, wherein a sample of seed of said variety has been deposited under ATCC Accession No. ______.
10. The composition of claim 9, wherein the growth media is soil or a synthetic cultivation medium.
11. A plant produced by introducing a single locus conversion into soybean variety 01045749, or a selfed progeny thereof comprising the single locus conversion, wherein the single locus conversion was introduced into soybean variety 01045749 by backcrossing or genetic transformation and wherein a sample of seed of soybean variety 01045749 has been deposited under ATCC Accession No. ______.
12. The plant of claim 11, wherein the single locus conversion comprises a transgene.
13. A seed that produces the plant of claim 11.
14. The seed of claim 13, wherein the single locus confers a trait selected from the group consisting of male sterility, herbicide tolerance, insect resistance, pest resistance, disease resistance, modified fatty acid metabolism, abiotic stress resistance, altered seed amino acid composition, site-specific genetic recombination, and modified carbohydrate metabolism.
15. The seed of claim 13, wherein the single locus confers tolerance to an herbicide selected from the group consisting of glyphosate, sulfonylurea, imidazalinone, dicamba, glufosinate, phenoxy proprionic acid, cyclohexanedione, triazine, benzonitrile, PPO-inhibitor herbicides and broxynil.
16. The seed of claim 13, wherein the single locus conversion comprises a transgene.
17. The method of claim 6, wherein the method further comprises:
(a) crossing a plant grown from said F1 hybrid soybean seed with itself or a different soybean plant to produce a seed of a progeny plant of a subsequent generation;
(b) growing a progeny plant of a subsequent generation from said seed of a progeny plant of a subsequent generation and crossing the progeny plant of a subsequent generation with itself or a second plant to produce a progeny plant of a further subsequent generation; and
(c) repeating steps (a) and (b) using said progeny plant of a further subsequent generation from step (b) in place of the plant grown from said F1 hybrid soybean seed in step (a), wherein steps (a) and (b) are repeated with sufficient inbreeding to produce an inbred soybean plant derived from the soybean variety 01045749.
18. The method of claim 17, comprising crossing said inbred soybean plant derived from the soybean variety 01045749 with a plant of a different genotype to produce a seed of a hybrid soybean plant derived from the soybean variety 01045749.
19. A method of producing a commodity plant product comprising collecting the commodity plant product from the plant of claim 1.
20. The method of claim 19, wherein the commodity plant product is protein concentrate, protein isolate, grain, soybean hulls, meal, flour, or oil.
21. A soybean commodity plant product produced by the method of claim 20, wherein the commodity plant product comprises at least one cell of soybean variety 01045749.