1) A rotary viscous damper comprising a stator and a rotor defining between them a main chamber filled with a fluid, substantially radial paddles being disposed on each of said stator and rotor, said paddles dividing said main chamber into a plurality of chambers, and presenting means to create a fluid communication between the chambers, said damper further comprising at least one conical elastomeric bearing between the stator and the rotor.
2) A damper as claimed in claim 1, wherein is further provided another bearing between the stator and the rotor, for improving the guidance between the stator versus the rotor.
3) A damper as claimed in claim 1, wherein the said at least one conical elastomeric bearing comprises a metal-elastomer laminated material.
4) A damper as claimed in claim 3, wherein said metal-elastomer laminated material consists of multiple layers of elastomers with metallic shims in between every layer.
5) A damper as claimed in claim 4, wherein the said layers are conically converging to the center of the damper.
6) A damper as claimed in claim 4, wherein the said layers are conically diverging to the center of the damper.
7) A damper as claimed in claim 1, wherein it further comprises a volume compensation device.
8) A damper as claimed in claim 7, wherein the volume compensation device comprises an auxiliary chamber which communicates with said main chamber, said auxiliary chamber being defined between a substantially transverse wall of the rotor and a sealing diaphragm, which is elastically urged against the said wall.
9) A damper as claimed in claim 8, wherein the diaphragm is provided on a piston which is loaded by springs, in order to be axially movable in function of the temperature of the fluid in the main chamber.
10) A damper as claimed in claim 1, wherein at least one conduit is provided, with opened ends in fluid communication with entry holes of the stator, to create a fluid communication between two associated chambers.
11) A damper as claimed in claim 10, wherein the rotor presents a central bore in which is mounted a shaft, the said at least one conduit being provided on the external wall of said shaft.
12) A damper as claimed in claim 10, wherein the said at least one conduit is provided on the external wall of the main chamber.
13) A damper as claimed in claim 10, wherein it comprises the said at least one conduit is provided on the top, on the bottom or on top and bottom of the main chamber.
14) A damper as claimed in claim 10, wherein the length, cross-section and profile of said at least one conduit are determined to provide the required damping characteristics.
15) A damper as claimed in claim 1, wherein it includes relief valves for torque limitation purposes.
16) A damper as claimed in claim 15, wherein the relief valves are provided by pairs at each of their location.
17) A damper as claimed in claim 1, wherein an anti-wear coating is provided on dynamic surfaces subject to abrasion.
18) A damper as claimed in claim 1, wherein an autonomous pressure monitoring system is provided to make maintenance easier.
19) A damper as claimed in claim 1, wherein cooling fins are provided on the exterior of its housing.
20) A damper as claimed in claim 1, wherein a heating element is provided inside or outside its housing.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A manufacturing method of a thin film transistor comprising:
forming a sourcedrain electrode on a substrate;
forming low resistance conductive thin films on the sourcedrain electrode;
forming an oxide semiconductor thin film layer on the low resistance conductive thin films;
forming a first gate insulating film on the oxide semiconductor thin film layer;
etching the first gate insulating film, the low resistance conductive thin films, and the oxide semiconductor thin film layer such that (i) side surfaces of the first gate insulating films, corresponding side surfaces of the low resistance conductive thin films, and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of a channel of the thin film transistor, and (ii) a width of the first gate insulating film is wider than a width of the sourcedrain electrode in the channel width direction of the channel;
forming a second gate insulating film on the first gate insulating film; and
mounting a gate electrode over the second gate insulating film.
2. The method according to claim 1, wherein the oxide semiconductor thin film layer primarily comprises zinc oxide.
3. The method according to claim 1, wherein the etching is dry etching.
4. A manufacturing method of a thin film transistor comprising:
forming a gate electrode on a substrate;
forming a gate insulating film on the gate electrode and forming a sourcedrain electrode on the gate insulating film;
forming low resistance conductive thin films on the sourcedrain electrode;
forming an oxide semiconductor thin film layer on the low resistance conductive thin films;
forming a first overcoat insulating film on the oxide semiconductor thin film;
etching the first overcoat insulating film, the low resistance conductive thin films, and the oxide semiconductor thin film layer such that (i) side surfaces of the first overcoat insulating film, corresponding surfaces of the low resistance conductive thin films, and corresponding side surfaces of the oxide semiconductor thin film layer coincide with each other in a channel width direction of a channel of the thin film transistor, and (ii) a width of the first overcoat insulating film is wider than a width of the sourcedrain electrode in the channel width direction of the channel; and
forming a second overcoat insulating film on the first overcoat insulating film.
5. The method according to claim 4, wherein the oxide semiconductor thin film layer primarily comprises zinc oxide.
6. The method according to claim 4, wherein the etching is dry etching.
7. A manufacturing method of a thin film transistor comprising:
forming a predetermined number of pairs of sourcedrain electrodes, each said pair comprising a source electrode and a drain electrode defining a gap therebetween at an area corresponding to a channel of the thin film transistor, and each said pair being spaced apart from an adjacent pair by a spacing;
forming a pair of low resistance conductive thin films, which define a gap therebetween along the channel-corresponding area, such that one of the low resistance conductive thin films covers the source electrodes and another of the low resistance conductive thin films covers the drain electrodes;
forming an oxide semiconductor thin film layer on the pair of low resistance conductive thin films, on the channel-corresponding area, and on each said spacing; and
etching the oxide semiconductor thin film layer and the low resistance conductive thin films along each said spacing between adjacent pairs of the sourcedrain electrodes, to separate each of the oxide semiconductor thin film layer and the low resistance conductive thin films into a predetermined number of oxide semiconductor thin film layer pieces and a predetermined number of pairs of low resistance conductive thin film pieces corresponding respectively to the predetermined number of pairs of sourcedrain electrodes, such that at each said spacing side surfaces of each of the oxide semiconductor thin film layer pieces coincide with corresponding side surfaces of the pair of low resistance conductive thin film pieces corresponding to the oxide semiconductor thin film layer piece.
8. The method of according to claim 7, wherein the forming of the pair of low resistance conductive thin films comprises etching a low resistance conductive thin film to form the pair of low resistance conductive thin films to have outer ends that are positioned outside outer ends of a final shape of the low resistance conductive thin films.