1. A method of modifying an operation of an integrated circuit device, comprising:
identifying a first type of integrated circuit element, a second type of integrated circuit element and a third type of integrated circuit element, wherein operational characteristics of the first type of integrated circuit element are to be modified, operational characteristics of the third type of integrated circuit element are to be modified, and operational characteristics of the second type of integrated circuit element are to remain constant;
depositing a first stress inducing film on the first, second and third type of integrated circuit element;
applying a first masking layer to the first and second type of integrated circuit elements;
stripping the first stress inducing film from the third type of integrated circuit element, wherein the first masking layer is applied prior to stripping the first stress inducing film from the third type of integrated circuit element and wherein the first stress inducing film applies a first stress to the first type of integrated circuit element to thereby change an operational characteristic of the first type of integrated circuit element; and
depositing a second stress inducing film on the third type of integrated circuit element, wherein the second stress inducing film induces a second stress to the third type of integrated circuit element to thereby change an operational characteristic of the third type of integrated circuit element.
2. The method of claim 1, wherein the first type of integrated circuit element is a nFET device whose operation is to be modified, the second type of integrated circuit element is a pFET device whose operation is not to be modified, and the third type of integrated circuit element is a pFET device whose operation is to be modified.
3. The method of claim 1, further comprising:
relaxing a surface of the second type of integrated circuit element so as to relax the first stress applied to the second type of integrated circuit element, wherein the relaxing of the first stress applied to the second type of integrated circuit element causes the operational characteristics of the second type of integrated circuit element to be substantially unchanged.
4. The method of claim 3, wherein the surface of the second type of integrated circuit element is relaxed by performing ion implantation.
5. The method of claim 1, wherein the first stress inducing film is a compressive stress inducing film and the second stress inducing film is a tensile stress inducing film.
6. The method of claim 1, wherein the first masking layer is a combination of a first mask associated with the first type of integrated circuit element and a second mask associated with the second type of integrated circuit element.
7. The method of claim 1, further comprising:
applying the second stress inducing film to the first, second and third type of integrated circuit elements; and
stripping the first masking layer and the second stress inducing film from the first and second type of integrated circuit elements.
8. The method of claim 3, wherein relaxing the surface of the second type of integrated circuit element comprises:
masking the first type of integrated circuit element using a first mask;
masking the third type of integrated circuit element using a second mask; and
performing ion implantation to the second type of integrated circuit device based on the design masking layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A piezoelectric resonator device, in which a package having an internal space is made up of a base and a lid, and a piezoelectric resonator plate is held on the base inside the internal space, wherein an +X axial direction of the piezoelectric resonator plate in the internal space is set and wherein the piezoelectric resonator plate is made up of a base component and a plurality of leg components that protrude from the base component, excitation electrodes having different potential are formed on the leg components, lead electrodes that are drawn from the excitation electrodes in order to electrically connect the excitation electrodes with external electrodes at the base component are formed on the base component and the leg components, and a groove is formed in a front main face of the base component from at least one side face in the .+\u2212.X axial directions, wherein no grooves are formed in the rear main face.
2. The piezoelectric resonator device according to claim 1, wherein the piezoelectric resonator plate is provided with an identification portion visible from a plan view perspective for identifying the +X axial direction.
3. The piezoelectric resonator device according to claim 2, wherein the piezoelectric resonator plate is made up of a base component and a plurality of leg components that protrude from the base component, and the identification portion is provided to protruding ends of the leg components.
4. The piezoelectric resonator device according to claim 3, wherein the protruding ends each include a protruding end face and .+\u2212.X axial side faces, and the identification portion is a slit formed extending from the protruding end face to the -X axial side face.
5. The piezoelectric resonator device according to claim 1, wherein a plurality of the grooves are formed in the front main face of the base component in the .+\u2212.Y axial directions.
6. The piezoelectric resonator device according to claim 5, wherein the length of at least one of the grooves in the .+\u2212.X axial directions is greater than the length in the .+\u2212.X axial directions of the other grooves adjacent on the .+\u2212.Y axial direction sides.
7. The piezoelectric resonator device according to claim 1, wherein the lead electrodes and external electrodes are electrically connected at opposing locations on a rear main face of the base component across from the locations where the grooves are formed in the front main face.
8. The piezoelectric resonator device according to claim 2, wherein the piezoelectric resonator plate is made up of a base component and a plurality of leg components that protrude from the base component, excitation electrodes having different potential are formed on the leg components, lead electrodes that are drawn from the excitation electrodes in order to electrically connect the excitation electrodes with external electrodes at the base component are formed on the base component and the leg components, and a groove is formed in a front main face of the base component from at least one side face in the .+\u2212.X axial directions.
9. The piezoelectric resonator device according to claim 3, wherein the piezoelectric resonator plate is made up of a base component and a plurality of leg components that protrude from the base component, excitation electrodes having different potential are formed on the leg components, lead electrodes that are drawn from the excitation electrodes in order to electrically connect the excitation electrodes with external electrodes at the base component are formed on the base component and the leg components, and a groove is formed in a front main face of the base component from at least one side face in the .+\u2212.X axial directions.
10. The piezoelectric resonator device according to claim 4, wherein the piezoelectric resonator plate is made up of a base component and a plurality of leg components that protrude from the base component, excitation electrodes having different potential are formed on the leg components, lead electrodes that are drawn from the excitation electrodes in order to electrically connect the excitation electrodes with external electrodes at the base component are formed on the base component and the leg components, and a groove is formed in a front main face of the base component from at least one side face in the .+\u2212.X axial directions.
11. The piezoelectric resonator device according to claim 5, wherein the lead electrodes and external electrodes are electrically connected at opposing locations on a rear main face of the base component across from the locations where the grooves are formed in the front main face.
12. The piezoelectric resonator device according to claim 6, wherein the lead electrodes and external electrodes are electrically connected at opposing locations on a rear main face of the base component across from the locations where the grooves are formed in the front main face.
13. The piezoelectric resonator device according to claim 8, wherein the lead electrodes and external electrodes are electrically connected at opposing locations on a rear main face of the base component across from the locations where the grooves are formed in the front main face.
14. The piezoelectric resonator device according to claim 9, wherein the lead electrodes and external electrodes are electrically connected at opposing locations on a rear main face of the base component across from the locations where the grooves are formed in the front main face.
15. The piezoelectric resonator device according to claim 10, wherein the lead electrodes and external electrodes are electrically connected at opposing locations on a rear main face of the base component across from the locations where the grooves are formed in the front main face.
16. The piezoelectric resonator device according to claim 8, wherein a plurality of the grooves are formed in the front main face of the base component in the .+\u2212.Y axial directions.
17. The piezoelectric resonator device according to claim 9, wherein a plurality of the grooves are formed in the front main face of the base component in the .+\u2212.Y axial directions.