1. A method for manufacturing a semiconductor device, the method comprising:
providing a semiconductor substrate comprising a first side, a second side, a plurality of laterally spaced semiconductor devices integrated into the semiconductor substrate, and a drift region of a first conductivity type;
forming trenches in the semiconductor substrate at the first side of the semiconductor substrate between laterally adjacent semiconductor devices, each of the trenches comprising two sidewalls and a bottom;
forming first doping zones of a second conductivity type in the semiconductor substrate at least along the sidewalls of the trenches, wherein the first doping zones form pn-junctions with the drift region;
forming second doping zones of the first conductivity type in the semiconductor substrate at least along a part of the bottom of the trenches, wherein the second doping zones adjoin the drift region; and
cutting the semiconductor substrate along the second doping zones in the trenches to separate the semiconductor devices.
2. The method of claim 1, further comprising filling the trenches with an insulating material.
3. The method of claim 1, wherein the drift region has a vertical extension and wherein forming the trenches comprises forming the trenches from the first side to a depth of about half of the vertical extension of the drift region.
4. The method of claim 1, further comprising forming third doping zones of the second conductivity in the semiconductor substrate at the bottom of the trenches, wherein the third doping zones form pn-junctions with the drift region and adjoin adjacent first doping zones.
5. The method of claim 4, wherein the first doping zones and the third doping zones are formed by off-axis implantation of dopants of a second type.
6. The method of claim 1, wherein forming the second doping zones comprises:
forming spacers at the sidewalls of the trenches, the spacer leaving a portion of the bottom of the trenches exposed; and
implanting dopants of a first type into the exposed bottom portion of the trenches to form the second doping zones using the spacer as an implantation mask.
7. The method of claim 6, wherein forming the second doping zones further comprises:
etching the spacers to increase the exposed portion of the bottom of the trenches; and
implanting further dopants of the first type into the increased exposed portion of the bottom of the trenches.
8. The method of claim 1, further comprising forming field plates on the first side of the semiconductor substrate to at least partially cover the trenches.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A mounting plate, comprising:
a first fixing device for an electrical device; and
a second fixing device for a top-hat shaped mounting rail having a first offset support flange and a second offset support flange, the second fixing device including:
a first holder and a second holder each having a contact portion and each being disposed mirror-symmetrically about a longitudinal axis of the mounting plate on a rear surface of the mounting plate;
an abutment opposite the first and second holders, the abutment being slideable relative to the holders along a longitudinal direction of the mounting plate; and
a metal projection disposed at a distance from the first and second holders with respect to the longitudinal direction and centrally with respect to a width of the mounting plate on the rear surface of the mounting plate and configured to clamp at least one of the first and second offset support flanges against the contact portions of the first and second holders, the projection being configured to deform upon a clamping of the at least one of the offset support flanges.
2. The mounting plate as recited in claim 1, wherein a portion of the mounting plate in a vicinity of the projection is deformed upon the clamping.
3. The mounting plate as recited in claim 1, wherein the projection is plastically deformed upon the clamping.
4. The mounting plate as recited in claim 2, wherein the portion of the mounting plate is plastically deformed upon the clamping.
5. The mounting plate as recited in claim 3, wherein the projection is plastically deformed upon the clamping at a portion of the at least one of the offset support flanges having a thickness greater than 2 millimeters.
6. The mounting plate as recited in claim 4, wherein the portion of the mounting plate is plastically deformed upon the clamping at a portion of the at least one of the offset support flanges having a thickness greater than 2 millimeters.
7. The mounting plate as recited in claim 1, wherein the mounting plate and the projection are formed as a single piece.
8. The mounting plate as recited in claim 1, wherein the projection includes a resilient element.
9. The mounting plate as recited in claim 2, wherein the portion of the mounting plate includes a resilient element.
10. The mounting plate as recited in claim 1, wherein the projection includes an undercut.
11. The mounting plate as recited in claim 2, wherein the portion of the mounting plate includes a flat spring.
12. The mounting plate as recited in claim 1, wherein the mounting plate includes an electrically conductive material.
13. The mounting plate as recited in claim 12, wherein the mounting plate has a form of a casting.
14. The mounting plate as recited in claim 1, wherein at least a portion of the projection includes a height greater than 0.6 millimeters, and the cross section of the portion is less than 5 square millimeters.
15. The mounting plate as recited in claim 1, wherein the mounting plate is an elongated flat member.
16. The mounting plate as recited in claim 1, wherein the projection includes a first portion disposed longitudinally below the first and second holders and a second portion disposed adjacent to a free end of the first and second holders.