1. A connecting system for a semiconductor device package comprising:
a plurality of bonding regions about a die region, the bonding regions each corresponding to a designated one of a plurality of bonding pads of a die mounted in the die region, a first set of the bonding regions positioned along a first guide line and corresponding to a first plurality of adjacent bonding pads at a central region of an edge of the die, a second set of the bonding regions positioned along a second guide line and corresponding to a second plurality of adjacent bonding pads at a corner region of the die, the first and second guide lines being discontinuous; and
a plurality of external terminals, each connected to a corresponding one of the plurality of bonding regions.
2. The connecting system of claim 1 wherein the bonding regions comprise bonding fingers.
3. The connecting system of claim 2 wherein the bonding fingers are formed on an outer surface of a multiple-layered substrate or multiple-layered circuit board, and further comprising a plurality of conductive vias that connect each of the plurality of bonding fingers to each corresponding one of the plurality of external terminals.
4. The connecting system of claim 1 wherein the bonding regions comprise bonding tips of a lead frame and further comprising conductive leads coupled between each bonding region and a corresponding one of the plurality of external terminals.
5. The connecting system of claim 4 wherein the conductive leads extend in an inward direction past the bonding tips into the die region to serve as a support for a die mounted in the die region.
6. The connecting system of claim 4 wherein at least one of the conductive leads coupled to the second set of bonding regions includes a first inflection point that redirects the lead toward the central region of the edge of a die mounted in the die region and away from the corner region of the die.
7. The connecting system of claim 6 wherein the at least one of the conductive leads coupled to the second set of bonding regions further includes a second inflection point closer to the die region than the first inflection point that redirects the lead to be oriented in a direction toward the bonding pad corresponding to the bonding region of the conductive lead.
8. The connecting system of claim 1 wherein the first and second guide lines comprise at least one of a line segment, a curve segment, a sinuous curve segment, a spline curve, an arc segment, a parabolic arc segment, an elliptic arc segment, and a circular arc segment.
9. The connecting system of claim 1 wherein:
a change in bonding angle between each one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions is incremental,
a change in bonding angle between each one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is incremental, and
a change in bonding angle between a last one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions and a first one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is discontinuous relative to the incremental change.
10. The connecting system of claim 9 wherein the bonding angles of each corresponding first plurality of adjacent bonding pads and first set of bonding regions and wherein the bonding angles of each corresponding second plurality of adjacent bonding pads and second set of bonding regions are not greater than a maximum acceptable bonding angle.
11. The connecting system of claim 1 wherein the first and second guide lines are positioned at different distances from the die region.
12. The connecting system of claim 11 wherein the second guide line is closer to the die region than the first guide line.
13. The connecting system of claim 1 wherein the bonding regions are elongated and have long axes that are oriented in a direction toward the corresponding bonding pad of a die mounted in the die region.
14. The connecting system of claim 1 wherein the first set of bonding regions positioned along the first guide line and the second set of bonding regions positioned along the second guide line are located in the connecting system to correspond with an octant of the die region.
15. The connecting system of claim 14 wherein each octant has a corresponding first set of bonding regions positioned along the first guide line and a corresponding second set of bonding regions positioned along the second guide line.
16. The connecting system of claim 1 wherein the semiconductor device package comprises one of a ball grid array (BGA), a quad flat package (QFP) and a quad flat non-lead package (QFN).
17. A connecting system for a semiconductor device package comprising:
a plurality of bonding regions about a die region, the bonding regions each corresponding to a designated one of a plurality of bonding pads of a die mounted in the die region, a first set of the bonding regions positioned along a first guide line and corresponding to a first plurality of adjacent bonding pads at a central region of an edge of the die, a second set of the bonding regions positioned along a second guide line and corresponding to a second plurality of adjacent bonding pads at a corner region of the die; and
a plurality of external terminals, each connected to a corresponding one of the plurality of bonding regions, wherein
a change in a bonding angle between each one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions is incremental,
a change in the bonding angle between each one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is incremental, and wherein
a change in the bonding angle between a last one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions and a first one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is discontinuous relative to the incremental change.
18. The connecting system of claim 17 wherein the first and second guide lines are discontinuous;
19. The connecting system of claim 17 wherein the bonding regions comprise bonding fingers.
20. The connecting system of claim 19 wherein the bonding fingers are formed on an outer surface of a multiple-layered substrate or multiple-layered circuit board, and further comprising a plurality of conductive vias that connects each of the plurality of bonding fingers to each corresponding one of the plurality of external terminals.
21. The connecting system of claim 17 wherein the bonding regions comprise bonding tips of a lead frame and further comprising conductive leads coupled between each bonding region and a corresponding one of the plurality of external terminals.
22. The connecting system of claim 21 wherein the conductive leads extend in an inward direction past the bonding tips into the die region to serve as a support for a die mounted in the die region.
23. The connecting system of claim 21 wherein at least one of the conductive leads coupled to the second set of bonding regions includes a first inflection point that redirects the lead toward the central region of the edge of a die mounted in the die region and away from the corner region of the die.
24. The connecting system of claim 23 wherein the at least one of the conductive leads coupled to the second set of bonding regions further includes a second inflection point closer to the die region than the first inflection point that redirects the lead to be oriented in a direction toward the bonding pad corresponding to the bonding region of the conductive lead.
25. The connecting system of claim 17 wherein the first and second guide lines comprise at least one of a line segment, a curve segment, a sinuous curve segment, a spline curve, an arc segment, a parabolic arc segment, an elliptic arc segment, and a circular arc segment.
26. The connecting system of claim 17 wherein the bonding angles of each corresponding first plurality of adjacent bonding pads and first set of bonding regions and wherein the bonding angles of each corresponding second plurality of adjacent bonding pads and second set of bonding regions are not greater than a maximum acceptable bonding angle.
27. The connecting system of claim 17 wherein the first and second guide lines are positioned at different distances from the die region.
28. The connecting system of claim 27 wherein the second guide line is closer to the die region than the first guide line.
29. The connecting system of claim 17 wherein the bonding regions are elongated and have long axes that are oriented in a direction toward the corresponding bonding pad of a die mounted in the die region.
30. The connecting system of claim 17 wherein the first set of bonding regions positioned along the first guide line and the second set of bonding regions positioned along the second guide line are located in the connecting system to correspond with an octant of the die region.
31. The connecting system of claim 30 wherein each octant has a corresponding first set of bonding regions positioned along the first guide line and a corresponding second set of bonding regions positioned along the second guide line.
32. The connecting system of claim 17 wherein the semiconductor device package comprises one of a ball grid array (BGA), a quad flat package (QFP) and a quad flat non-lead package (QFN).
33. A connecting system for a semiconductor device package comprising:
a plurality of bonding regions about a die region;
a plurality of external terminals, each connected to a corresponding one of the plurality of bonding regions; and
a plurality of conductive leads that couple corresponding bonding regions and external terminals, the bonding regions each comprising bonding tips of the conductive leads each corresponding to a designated one of a plurality of bonding pads of a die mounted in the die region, a first set of the bonding regions positioned along a first guide lined and corresponding to a first plurality of adjacent bonding pads at a central region of an edge of the die, a second set of the bonding regions positioned along a second guide line and corresponding to a second plurality of adjacent bonding pads at a corner region of the die; and wherein at least one of the conductive leads coupled to the second set of bonding regions includes a first inflection point that redirects the lead toward the central region of the edge of a die mounted in the die region and away from the corner region of the die.
34. The connecting system of claim 33 wherein the connecting system comprises a lead frame.
35. The connecting system of claim 33 wherein the conductive leads lie on a plane.
36. The connecting system of claim 33 wherein the first and second guide lines are discontinuous.
37. The connecting system of claim 33 wherein the conductive leads extend in an inward direction past the bonding tips into the die region to serve as a support for a die mounted in the die region.
38. The connecting system of claim 33 wherein the at least one of the conductive leads coupled to the second set of bonding regions further includes a second inflection point closer to the die region than the first inflection point that redirects the lead to be oriented in a direction toward the bonding pad corresponding to the bonding region of the conductive lead.
39. The connecting system of claim 33 wherein:
a change in bonding angle between each one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions is incremental,
a change in bonding angle between each one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is incremental, and
a change in bonding angle between a last one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions and a first one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is discontinuous relative to the incremental change.
40. The connecting system of claim 39 wherein the bonding angles of each corresponding first plurality of adjacent bonding pads and first set of bonding regions and wherein the bonding angles of each corresponding second plurality of adjacent bonding pads and second set of bonding regions are not greater than a maximum acceptable bonding angle.
41. The connecting system of claim 33 wherein the first and second guide lines comprise at least one of a line segment, a curve segment, a sinuous curve segment, a spline curve, an arc segment, a parabolic arc segment, an elliptic arc segment, and a circular arc segment.
42. The connecting system of claim 33 wherein the first and second guide lines are positioned at different distances from the die region.
43. The connecting system of claim 42 wherein the second guide line is closer to the die region than the first guide line.
44. The connecting system of claim 33 wherein the bonding regions are elongated and have long axes that are oriented in a direction toward the corresponding bonding pad of a die mounted in the die region.
45. The connecting system of claim 33 wherein the first set of bonding regions positioned along the first guide line and the second set of bonding regions positioned along the second guide line are located in the connecting system to correspond with an octant of the die region.
46. The connecting system of claim 45 wherein each octant has a corresponding first set of bonding regions positioned along the first guide line and a corresponding second set of bonding regions positioned along the second guide line.
47. The connecting system of claim 33 wherein the semiconductor device package comprises one of a ball grid array (BGA), a quad flat package (QFP) and a quad flat non-lead package (QFN).
48. A semiconductor device package comprising:
a semiconductor device die in a central die region of the package, the die including a first plurality of bonding pads at a central region of an edge of the die and a second plurality of bonding pads at a corner region of the die;
a connecting system including a plurality of bonding regions about the die region, the bonding regions each corresponding to a designated one of a plurality of the bonding pads of the die, a first set of the bonding regions positioned along a first guide line and corresponding to the first plurality of adjacent bonding pads at the central region of the die, a second set of the bonding regions positioned along a second guide line and corresponding to the second plurality of adjacent bonding pads at the corner region of the die, the first and second guide lines being discontinuous;
a plurality of bonding wires, each bonding wire connecting corresponding bonding regions of the connecting system and bonding pads of the die; and
a plurality of external terminals, each connected to a corresponding one of the plurality of bonding regions.
49. The semiconductor device package of claim 48 wherein the connecting system comprises a multiple-layered substrate or multiple layered circuit board having an outer surface, and wherein the bonding regions comprise bonding fingers formed on the outer surface, and further comprising a plurality of conductive vias that connect each of the plurality of bonding fingers to each corresponding one of the plurality of external terminals.
50. The semiconductor device package of claim 48 wherein the connecting system comprises a lead frame and wherein the bonding regions comprise bonding tips of the lead frame and wherein the lead frame further comprises conductive leads coupled between each bonding region and a corresponding one of the plurality of external terminals.
51. The semiconductor device package of claim 50 wherein the conductive leads extend in an inward direction past the bonding tips into the die region to support the die.
52. The semiconductor device package of claim 50 wherein at least one of the conductive leads coupled to the second set of bonding regions includes a first inflection point that redirects the lead toward the central region of the edge of the die and away from the corner region of the die.
53. The semiconductor device package of claim 52 wherein the at least one of the conductive leads coupled to the second set of bonding regions further includes a second inflection point closer to the die than the first inflection point that redirects the lead to be oriented in a direction toward the bonding pad corresponding to the bonding region of the conductive lead.
54. The semiconductor device package of claim 48 further comprising a die pad supporting the die in the die region.
55. The semiconductor device package of claim 54 wherein the die pad is one of square, rectangular, circular, oval, elliptical, and polygonal, in shape.
56. The semiconductor device package of claim 48 wherein the first and second guide lines comprise at least one of a line segment, a curve segment, a sinuous curve segment, a spline curve, an arc segment, a parabolic arc segment, an elliptic arc segment, and a circular arc segment.
57. The semiconductor device package of claim 48 wherein:
a change in bonding angle between each one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions is incremental,
a change in bonding angle between each one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is incremental, and
a change in bonding angle between a last one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions and a first one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is discontinuous relative to the incremental change.
58. The semiconductor device package of claim 57 wherein the bonding angles of each corresponding first plurality of adjacent bonding pads and first set of bonding regions and wherein the bonding angles of each corresponding second plurality of adjacent bonding pads and second set of bonding regions are not greater than a maximum acceptable bonding angle.
59. The semiconductor device package of claim 48 wherein the first and second guide lines are positioned at different distances from the die region, and wherein the second guide line is closer to the die region than the first guide line.
60. The semiconductor device package of claim 48 wherein the semiconductor device package comprises one of a ball grid array (BGA), a quad flat package (QFP) and a quad flat non-lead package (QFN).
61. The semiconductor device package of claim 48 wherein the bonding wires comprise:
a first set of bonding wires coupling the corresponding first set of bonding regions and the plurality of adjacent bonding pads at the central region of the die;
a second set of bonding wires coupling the corresponding second set of bonding regions and the plurality of adjacent bonding pads at the corner region of the die;
and wherein at least one of the bonding wires of the first set and at least one of the bonding wires of the second set overlap.
62. The semiconductor device package of claim 61 wherein the at least one of the bonding wires of the first set has a higher loop height than the at least one of the bonding wires of the second set.
63. A semiconductor device package comprising:
a semiconductor device die in a central die region of the package, the die including a first plurality of bonding pads at a central region of an edge of the die and a second plurality of bonding pads at a corner region of the die;
a connecting system including a plurality of bonding regions about the die region, the bonding regions each corresponding to a designated one of a plurality of the bonding pads of the die, a first set of the bonding regions positioned along a first guide line and corresponding to the first plurality of adjacent bonding pads at the central region of the die, a second set of the bonding regions positioned along a second guide line and corresponding to the second plurality of adjacent bonding pads at the corner region of the die, wherein
a change in bonding angle between each one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions is incremental,
a change in bonding angle between each one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is incremental, and
a change in bonding angle between a last one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions and a first one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is discontinuous relative to the incremental change;
a plurality of bonding wires, each bonding wire connecting corresponding bonding regions of the connecting system and bonding pads of the die; and
a plurality of external terminals, each connected to a corresponding one of the plurality of bonding regions.
64. The semiconductor device package of claim 63 wherein the first and second guide lines are discontinuous.
65. The semiconductor device package of claim 63 wherein the connecting system comprises a multiple-layered substrate or multiple layered circuit board having an outer surface, and wherein the bonding regions comprise bonding fingers formed on the outer surface, and further comprising a plurality of conductive vias that connect each of the plurality of bonding fingers to each corresponding one of the plurality of external terminals.
66. The semiconductor device package of claim 63 wherein the connecting system comprises a lead frame and wherein the bonding regions comprise bonding tips of the lead frame and wherein the lead frame further comprises conductive leads coupled between each bonding region and a corresponding one of the plurality of external terminals.
67. The semiconductor device package of claim 66 wherein the conductive leads extend in an inward direction past the bonding tips into the die region to support the die.
68. The semiconductor device package of claim 66 wherein at least one of the conductive leads coupled to the second set of bonding regions includes a first inflection point that redirects the lead toward the central region of the edge of the die and away from the corner region of the die.
69. The semiconductor device package of claim 68 wherein the at least one of the conductive leads coupled to the second set of bonding regions further includes a second inflection point closer to the die than the first inflection point that redirects the lead to be oriented in a direction toward the bonding pad corresponding to the bonding region of the conductive lead.
70. The semiconductor device package of claim 63 further comprising a die pad supporting the die in the die region.
71. The semiconductor device package of claim 70 wherein the die pad is one of square, rectangular, circular, oval, elliptical, and polygonal, in shape.
72. The semiconductor device package of claim 63 wherein the first and second guide lines comprise at least one of a line segment, a curve segment, a sinuous curve segment, a spline curve, an arc segment, a parabolic arc segment, an elliptic arc segment, and a circular arc segment.
73. The semiconductor device package of claim 63 wherein the bonding angles of each corresponding first plurality of adjacent bonding pads and first set of bonding regions and wherein the bonding angles of each corresponding second plurality of adjacent bonding pads and second set of bonding regions are not greater than a maximum acceptable bonding angle.
74. The semiconductor device package of claim 63 wherein the first and second guide lines are positioned at different distances from the die region, and wherein the second guide line is closer to the die region than the first guide line.
75. The semiconductor device package of claim 63 wherein the semiconductor device package comprises one of a ball grid array (BGA), a quad flat package (QFP) and a quad flat non-lead package (QFN).
76. The semiconductor device package of claim 63 wherein the bonding wires comprise:
a first set of bonding wires coupling the corresponding first set of bonding regions and the plurality of adjacent bonding pads at the central region of the die;
a second set of bonding wires coupling the corresponding second set of bonding regions and the plurality of adjacent bonding pads at the corner region of the die;
and wherein at least one of the bonding wires of the first set and at least one of the bonding wires of the second set overlap.
77. The semiconductor device package of claim 76 wherein the at least one of the bonding wires of the first set has a higher loop height than the at least one of the bonding wires of the second set.
78. A semiconductor device package comprising:
a semiconductor device die in a central die region of the package, the die including a first plurality of bonding pads at a central region of an edge of the die and a second plurality of bonding pads at a corner region of the die;
a connecting system including:
a plurality of bonding regions about the die region;
a plurality of external terminals, each connected to a corresponding one of the plurality of bonding regions; and
a plurality of conductive leads that couple corresponding bonding regions and external terminals, the bonding regions each comprising bonding tips of the conductive leads, each corresponding to a designated bonding pad of the die, a first set of the bonding regions positioned along a first guide line and corresponding to the first plurality of adjacent bonding pads at the central region of the die, a second set of the bonding regions positioned along a second guide line and corresponding to the second plurality of adjacent bonding pads at the corner region of the die, and wherein at least one of the conductive leads coupled to the second set of bonding regions includes a first inflection point that redirects the lead toward the central region of the edge of the die and away from the corner region of the die; and
a plurality of bonding wires, each bonding wire connecting corresponding bonding regions of the connecting system and bonding pads of the die.
79. The semiconductor device package of claim 78 wherein the connecting system comprises a lead frame and wherein the bonding regions comprise bonding tips of the lead frame and wherein the lead frame further comprises the conductive leads coupled between each bonding region and a corresponding one of the plurality of external terminals.
80. The semiconductor device package of claim 78 wherein the conductive leads lie on a plane.
81. The semiconductor device package of claim 78 wherein the first and second guide lines are discontinuous.
82. The semiconductor device package of claim 78 wherein the conductive leads extend in an inward direction past the bonding tips into the die region to support the die.
83. The semiconductor device package of claim 78 wherein the at least one of the conductive leads coupled to the second set of bonding regions further includes a second inflection point closer to the die than the first inflection point that redirects the lead to be oriented in a direction toward the bonding pad corresponding to the bonding region of the conductive lead.
84. The semiconductor device package of claim 78 further comprising a die pad supporting the die in the die region.
85. The semiconductor device package of claim 84 wherein the die pad is one of square, rectangular, circular, oval, elliptical, and polygonal, in shape.
86. The semiconductor device package of claim 78 wherein the first and second guide lines comprise at least one of a line segment, a curve segment, a sinuous curve segment, a spline curve, an arc segment, a parabolic arc segment, an elliptic arc segment, and a circular arc segment.
87. The semiconductor device package of claim 78 wherein:
a change in bonding angle between each one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions is incremental,
a change in bonding angle between each one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is incremental, and
a change in bonding angle between a last one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions and a first one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is discontinuous relative to the incremental change.
88. The semiconductor device package of claim 87 wherein the bonding angles of each corresponding first plurality of adjacent bonding pads and first set of bonding regions and wherein the bonding angles of each corresponding second plurality of adjacent bonding pads and second set of bonding regions are not greater than a maximum acceptable bonding angle.
89. The semiconductor device package of claim 78 wherein the first and second guide lines are positioned at different distances from the die region, and wherein the second guide line is closer to the die region than the first guide line.
90. The semiconductor device package of claim 78 wherein the semiconductor device package comprises one of a ball grid array (BGA), a quad flat package (QFP) and a quad flat non-lead package (QFN).
91. The semiconductor device package of claim 78 wherein the bonding wires comprise:
a first set of bonding wires coupling the corresponding first set of bonding regions and the plurality of adjacent bonding pads at the central region of the die;
a second set of bonding wires coupling the corresponding second set of bonding regions and the plurality of adjacent bonding pads at the corner region of the die;
and wherein at least one of the bonding wires of the first set and at least one of the bonding wires of the second set overlap.
92. The semiconductor device package of claim 91 wherein the at least one of the bonding wires of the first set has a higher loop height than the at least one of the bonding wires of the second set.
93. A method for wire bonding a semiconductor device package comprising:
mounting a semiconductor device die in a central die region of the package, the die including a first plurality of bonding pads at a central region of an edge of the die and a second plurality of bonding pads at a corner region of the die;
providing a connecting system including: a plurality of bonding regions about the die region, the bonding regions each corresponding to a designated one of a plurality of the bonding pads of the die, a first set of the bonding regions positioned along a first guide line and corresponding to the first plurality of adjacent bonding pads at the central region of the die, a second set of the bonding regions positioned along a second guide line and corresponding to the second plurality of adjacent bonding pads at the corner region of the die, the first and second guide lines being discontinuous; and a plurality of external terminals, each connected to a corresponding one of the plurality of bonding regions; and
wire bonding a plurality of bonding wires to connect corresponding bonding regions of the connecting system and bonding pads of the die.
94. The method of claim 93 wherein the connecting system comprises a multiple-layered substrate or multiple layered circuit board having an outer surface, and wherein the bonding regions comprise bonding fingers formed on the outer surface, and further comprising a plurality of conductive vias that connect each of the plurality of bonding fingers to each corresponding one of the plurality of external terminals.
95. The method of claim 93 wherein the connecting system comprises a lead frame and wherein the bonding regions comprise bonding tips of the lead frame and wherein the lead frame further comprises conductive leads coupled between each bonding region and a corresponding one of the plurality of external terminals.
96. The method of claim 95 wherein the conductive leads extend in an inward direction past the bonding tips into the die region to support the die.
97. The method of claim 95 wherein at least one of the conductive leads coupled to the second set of bonding regions includes a first inflection point that redirects the lead toward the central region of the edge of the die and away from the corner region of the die.
98. The method of claim 97 wherein the at least one of the conductive leads coupled to the second set of bonding regions further includes a second inflection point closer to the die than the first inflection point that redirects the lead to be oriented in a direction toward the bonding pad corresponding to the bonding region of the conductive lead.
99. The method of claim 93 wherein mounting the die comprises mounting the die on a die pad that supports the die in the die region.
100. The method of claim 99 wherein the die pad is one of square, rectangular, circular, oval, elliptical, and polygonal, in shape.
101. The method of claim 93 wherein the first and second guide lines comprise at least one of a line segment, a curve segment, a sinuous curve segment, a spline curve, an arc segment, a parabolic arc segment, an elliptic arc segment, and a circular arc segment.
102. The method of claim 93 wherein:
a change in bonding angle between each one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions is incremental,
a change in bonding angle between each one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is incremental, and
a change in bonding angle between a last one of the corresponding first plurality of adjacent bonding pads and first set of bonding regions and a first one of the corresponding second plurality of adjacent bonding pads and second set of bonding regions is discontinuous relative to the incremental change.
103. The method of claim 102 wherein the bonding angles of each corresponding first plurality of adjacent bonding pads and first set of bonding regions and wherein the bonding angles of each corresponding second plurality of adjacent bonding pads and second set of bonding regions are not greater than a maximum acceptable bonding angle.
104. The method of claim 93 wherein the first and second guide lines are positioned at different distances from the die region, and wherein the second guide line is closer to the die region than the first guide line.
105. The method of claim 93 wherein the semiconductor device package comprises one of a ball grid array (BGA), a quad flat package (QFP) and a quad flat non-lead package (QFN).
106. The method of claim 93 wherein:
a first set of the bonding wires couple the corresponding first set of bonding regions and the plurality of adjacent bonding pads at the central region of the die;
a second set of the bonding wires couple the corresponding second set of bonding regions and the plurality of adjacent bonding pads at the corner region of the die;
and wherein at least one of the bonding wires of the first set and at least one of the bonding wires of the second set overlap.
107. The method of claim 106 wherein the at least one of the bonding wires of the first set has a higher loop height than the at least one of the bonding wires of the second set.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
specifying a mode of travel with respect to a mapping service for determining one or more characteristics of one or more map elements, wherein the characteristics relate to presentation of the one or more map elements; and
rendering the map elements on a map display based, at least in part, on the mode of travel using the determined characteristics.
2. A method of claim 1, further comprising:
determining whether at least one of the map elements is compatible with the mode of travel,
wherein the rendering of the at least one map element is further based, at least in part, on the characteristics if the at least one map element is compatible with the mode of travel.
3. A method of claim 1, further comprising:
determining whether at least one of the map elements is relevant to the mode of travel,
wherein the rendering of the at least one map element is further based, at least in part, on the characteristics if the at least one map element is relevant to the mode of travel.
4. A method of claim 1, further comprising:
determining context information associated with at least one of the map elements,
wherein the rendering of the at least one map element is further based, at least in part, on the characteristics and the context information.
5. A method of claim 4, wherein the context information includes time, date, weather, activity, or a combination thereof.
6. A method of claim 1, wherein the characteristics relate to one or more visual effects that relate to line widths, line styles, fonts, font sizes, icons, models, color schemes, audio alerts, media files, or a combination thereof.
7. A method of claim 1, wherein the mode of travel includes a driving mode, a pedestrian mode, a public transportation mode, a bicycling mode, or a combination thereof.
8. A method of claim 1, wherein the map elements include a path, a road, a route, a point of interest, a terrain feature, a bridge, an elevator, an escalator, or a stairway.
9. An apparatus comprising:
at least one processor; and
at least one memory including computer program code,
wherein the at least one memory and the computer program code configured to, with the at least one processor, cause the apparatus to perform at least the following:
specify a mode of travel with respect to a map-related service for determining one or more characteristics of one or more map elements, wherein the characteristics relate to presentation of the one or more map elements; and
render the map elements on a map display based, at least in part, on the mode of travel using the determined characteristics.
10. An apparatus of claim 9, wherein the apparatus is further caused to:
determine whether at least one of the map elements is compatible with the mode of travel,
wherein the rendering of the at least one map element is further based, at least in part, on the characteristics if the at least one map element is compatible with the mode of travel.
11. An apparatus of claim 9, wherein the apparatus is further caused to:
determine whether at least one of the map elements is relevant to the mode of travel,
wherein the rendering of the at least one map element is further based, at least in part, on the characteristics if the at least one map element is relevant to the mode of travel.
12. An apparatus of claim 9, wherein the apparatus is further caused to:
determine context information associated with at least one of the map elements,
wherein the rendering of the at least one map element is further based, at least in part, on the characteristics and the context information.
13. An apparatus of claim 12, wherein the context information includes time, date, weather, activity, or a combination thereof.
14. An apparatus of claim 9, wherein the characteristics relate to one or more visual effects that relate to line widths, line styles, fonts, font sizes, icons, models, color schemes, audio alerts, media files, or a combination thereof.
15. An apparatus of claim 9, wherein the mode of travel includes a driving mode, a pedestrian mode, a public transportation mode, a bicycling mode, or a combination thereof.
16. An apparatus of claim 9, wherein the map elements include a path, a road, a route, a point of interest, a terrain feature, a bridge, an elevator, an escalator, or a stairway.
17. A non-transitory computer-readable storage medium carrying one or more sequences of one or more instructions which, when executed by one or more processors, cause an apparatus to perform at least the following:
specifying a mode of travel with respect to a mapping service for determining one or more characteristics of one or more map elements, wherein the characteristics relate to presentation of the one or more map elements; and
rendering the map elements on a map display based, at least in part, on the mode of travel using the determined characteristics.
18. A non-transitory computer-readable storage medium of claim 17, wherein the apparatus is caused to further perform:
determining whether at least one of the map elements is compatible with the mode of travel,
wherein the rendering of the at least one map element is further based, at least in part, on the characteristics if the at least one map element is compatible with the mode of travel.
19. A non-transitory computer-readable storage medium of claim 17, wherein the apparatus is caused to further perform:
determining whether at least one of the map elements is relevant to the mode of travel,
wherein the rendering of the at least one map element is further based, at least in part, on the characteristics if the at least one map element is relevant to the mode of travel.
20. A non-transitory computer-readable storage medium of claim 17, wherein the characteristics relate to one or more visual effects that relate to line widths, line styles, fonts, font sizes, icons, models, color schemes, audio alerts, media files, or a combination thereof.