What is claimed is:
1. An extreme (EUV) radiation source for generating EUV radiation, said source comprising:
a process chamber, said process chamber operating at a low pressure;
an outer housing;
a target generating device at least partially mounted within the housing, said target generating device emitting a stream of target material; and
an evaporation chamber, said evaporation chamber receiving the stream of target material from the target generating device, said stream of target material at least partially freezing in the evaporation chamber to become a frozen stream of target material as a result of evaporative cooling, said evaporation chamber operating at a higher pressure than the process chamber, wherein the stream of target material is emitted into the process chamber through an exit orifice in the evaporation chamber.
2. The source according to claim 1 wherein the evaporation chamber has a higher pressure than the process chamber as a result of evaporated target material from the stream of target material.
3. The source according to claim 1 further comprising a source of a supplemental gas in communication with the evaporation chamber, wherein the supplemental gas from the source of gas causes the evaporation chamber to be at a higher pressure than the process chamber.
4. The source according to claim 1 wherein the target generating device is a capillary tube.
5. The source according to claim 1 wherein the evaporation chamber is a continuous diameter cylinder.
6. The source according to claim 5 wherein the evaporation chamber has a diameter in the range of about 250-400 m and a length in the range of about 4-6 mm.
7. The source according to claim 1 wherein the target generating device is mounted within the evaporation chamber within the housing.
8. The source according to claim 1 wherein the exit orifice of the evaporation chamber has a diameter greater than 500 m.
9. The source according to claim 1 wherein the stream of target material is emitted through an exit orifice of the target generating device having a diameter between 30-100 m.
10. The source according to claim 1 further comprising a laser, said laser directing a laser beam to a target area in the process chamber to vaporize the stream of target material and create a plasma that emits the EUV radiation.
11. The source according to claim 1 wherein the target generating device receives the target material as a liquid target material of a cryogenically cooled target gas.
12. The source according to claim 1 wherein the target material is Xenon.
13. An extreme ultraviolet (EUV) radiation source for generating EUV radiation, said source comprising:
a process chamber, said process chamber operating at a vacuum pressure;
a nozzle assembly, said nozzle assembly positioned at least partially within the process chamber, said nozzle assembly including an outer housing, a target generating device mounted within the housing, and an evaporation chamber positioned within the housing, said target generating device receiving a cryogenically cooled liquid target material and emitting a stream of the liquid target material into the evaporation chamber, said stream of target becoming a frozen stream of target material as a result of evaporative cooling, said evaporation chamber operating at a higher pressure than the process chamber, wherein the stream of target material is emitted into the process chamber through an exit orifice in the evaporation chamber towards a target area; and
a laser, said laser directing a laser beam to the target area in the process chamber to vaporize the stream of target material and create a plasma that emits the EUV radiation.
14. The source according to claim 13 wherein the evaporation chamber has a higher pressure than the process chamber as a result of evaporated target material from the stream of target material.
15. The source according to claim 13 further comprising a source of a supplemental gas in communication with the evaporation chamber, wherein the supplemental gas from the source of gas causes the evaporation chamber to be at a higher pressure than the process chamber.
16. The source according to claim 13 wherein the target generating device is a capillary tube.
17. The source according to claim 13 wherein the evaporation chamber is a continuous diameter cylinder.
18. The source according to claim 17 wherein the evaporation chamber has a diameter in the range of about 250-400 m and a length in the range of about 4-6 mm.
19. The source according to claim 13 wherein the target generating device is mounted within the evaporation chamber within the housing.
20. The source according to claim 13 wherein the exit orifice of the evaporation chamber has a diameter greater than 500 m.
21. The source according to claim 13 wherein the stream of target material is emitted through an exit orifice of the target generating device having a diameter between 30-100 m.
22. A method of generating a stable stream of a target material emitted from a nozzle of an extreme ultraviolet (EUV) radiation source, comprising:
forcing a liquid target material through a target generating device into an evaporation chamber, said evaporation chamber being at a pressure that causes the stream of target material to freeze and become a stable frozen stream of the target material;
directing the stream of target material from the evaporation chamber to a target area in a process chamber, said process chamber operating at a lower pressure than the evaporation chamber; and
directing a laser beam to the target area in the process chamber to vaporize the stream of target material and create a plasma that emits the EUV radiation.
23. The method according to claim 22 further comprising emitting a gas into the evaporation chamber to provide a higher pressure in the evaporation chamber than the process chamber.
24. The method according to claim 1 wherein the evaporation chamber is a continuous diameter cylinder.
25. The method according to claim 24 wherein the evaporation chamber has a diameter in the range of about 250-400 m and a length in the range of about 4-6 mm.
26. The method according to claim 22 wherein the target generating device is mounted within the evaporation chamber within the housing.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a first line;
a second line;
a memory cell;
a first circuit configured to select and output any of a plurality of writing potentials to the first line; and
a second circuit configured to compare a potential of the second line and a plurality of reference potentials to read data out,
wherein the memory cell comprises:
a first transistor including a first gate, a first source and a first drain;
a second transistor including a second gate, a second source and a second drain; and
a third transistor including a third gate, a third source and a third drain,
wherein the second transistor includes an oxide semiconductor layer,
wherein the first gate and one of the second source and the second drain are electrically connected to each other,
wherein the first drain and the third source are electrically connected to each other,
wherein the second line and the third drain are electrically connected to each other, and
wherein the first line and the other of the second source and the second drain are electrically connected to each other.
2. The semiconductor device according to claim 1, further comprising a capacitor electrically connected to the first gate.
3. The semiconductor device according to claim 1, further comprising a third circuit configured to generate and supply the plurality of writing potentials to the first circuit, and configured to generate and supply the plurality of reference potentials to the second circuit.
4. The semiconductor device according to claim 1,
wherein the first transistor includes a channel formation region provided on a substrate including a semiconductor material, impurity regions between which the channel formation region is provided, a first gate insulating layer over the channel formation region, the first gate over the first gate insulating layer, and the first source and the first drain,
wherein the first source is electrically connected to one of the impurity regions, and
wherein the second source is electrically connected to the other of the impurity regions.
5. The semiconductor device according to claim 1, wherein the second transistor includes the second gate over a substrate including a semiconductor material, a second gate insulating layer over the second gate, the oxide semiconductor layer over the second gate insulating layer, and the second source and the second drain which are electrically connected to the oxide semiconductor layer.
6. The semiconductor device according to claim 1, wherein the oxide semiconductor layer includes In, Ga and Zn.
7. The semiconductor device according to claim 1, wherein the oxide semiconductor layer includes a crystal of In2Ga2ZnO7.
8. The semiconductor device according to claim 1, wherein a hydrogen concentration of the oxide semiconductor layer is less than or equal to 5\xd71019 atomscm3.
9. The semiconductor device according to claim 1, wherein off current of the second transistor is less than or equal to 1\xd710\u221213 A.
10. A semiconductor device comprising:
a first line;
a second line;
a memory cell;
a first circuit configured to select and output any of a plurality of writing potentials to the first line; and
a second circuit configured to compare a potential of the second line and a plurality of reference potentials to read data out,
wherein the memory cell comprises:
a first transistor including a first gate, a first source and a first drain;
a second transistor including a second gate, a second source and a second drain; and
a capacitor,
wherein the second transistor includes an oxide semiconductor layer,
wherein the first gate and one of the second source and the second drain are electrically connected to each other,
wherein the first gate and one electrode of the capacitor are electrically connected to each other,
wherein the second line and the first drain are electrically connected to each other, and
wherein the first line and the other of the second source and the second drain are electrically connected to each other.
11. The semiconductor device according to claim 10, further comprising a third circuit configured to generate and supply the plurality of writing potentials to the first circuit, and configured to generate and supply the plurality of reference potentials to the second circuit.
12. The semiconductor device according to claim 10,
wherein the first transistor includes a channel formation region provided on a substrate including a semiconductor material, impurity regions between which the channel formation region is provided, a first gate insulating layer over the channel formation region, the first gate over the first gate insulating layer, and the first source and the first drain,
wherein the first source is electrically connected to one of the impurity regions, and
wherein the second source is electrically connected to the other of the impurity regions.
13. The semiconductor device according to claim 10, wherein the second transistor includes the second gate over a substrate including a semiconductor material, a second gate insulating layer over the second gate, the oxide semiconductor layer over the second gate insulating layer, and the second source and the second drain which are electrically connected to the oxide semiconductor layer.
14. The semiconductor device according to claim 10, wherein the oxide semiconductor layer includes In, Ga and Zn.
15. The semiconductor device according to claim 10, wherein the oxide semiconductor layer includes a crystal of In2Ga2ZnO7.
16. The semiconductor device according to claim 10, wherein a hydrogen concentration of the oxide semiconductor layer is less than or equal to 5\xd71019 atomscm3.
17. The semiconductor device according to claim 10, wherein off current of the second transistor is less than or equal to 1\xd710\u221213 A.