1. A method of forming a high dielectric constant layer over a substrate, comprising:
pre-cleaning a surface of a substrate to remove native oxides;
pre-treating the surface of the substrate with an hydroxylating agent; and
forming a high dielectric constant layer over the surface of the substrate.
2. The method of claim 1, wherein pre-cleaning comprises introducing an acid solution to the surface of the substrate.
3. The method of claim 2, wherein the acid solution comprises a hydrofluoric acid solution.
4. The method of claim 1, wherein the hydroxylating agent comprises water vapor.
5. The method of claim 4, wherein a water vapor is generated from a hydrogen containing gas and an oxygen containing gas.
6. The method of claim 5, wherein the hydrogen containing gas is hydrogen (H2) gas and wherein the oxygen containing gas is nitrous oxide (N2O) gas.
7. The method of claim 1, wherein the high dielectric constant layer comprises a material selected from the group including hafnium containing materials, aluminum oxides, zirconium oxides, lanthanum oxides, yttrium oxides, tantalum oxides, composites thereof, and combinations thereof.
8. The method of claim 1, wherein the high dielectric constant layer comprises a material selected from the group including hafnium oxides, hafnium silicates, hafnium nitrides, hafnium aluminates, hafnium silicon oxynitrides, composites thereof, and combinations thereof.
9. The method of claim 1, wherein the high dielectric constant layer comprises hafnium oxides, compositions thereof, or combinations thereof.
10. The method of claim 1, wherein the high dielectric constant layer comprises hafnium silicates, composites thereof, or combinations thereof.
11. The method of claim 1, wherein forming the high dielectric constant layer comprises introducing a metal precursor and an oxygen containing compound.
12. The method of claim 1, wherein forming the high dielectric constant layer comprises a deposition technique selected from the group comprising chemical vapor deposition, atomic layer deposition, and physical vapor deposition.
13. A method of forming a hafnium containing layer over a substrate, comprising:
introducing an acid solution to a surface of a substrate;
introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate; and
forming a hafnium containing layer over the substrate.
14. The method of claim 13, wherein the hafnium containing layer comprises a material selected from the group including hafnium oxides, hafnium silicates, hafnium nitrides, hafnium aluminates, hafnium silicon oxynitrides, composites thereof, and combinations thereof.
15. The method of claim 13, wherein the hafnium containing layer comprises hafnium oxides, composites thereof, or combinations thereof.
16. The method of claim 13, wherein the hafnium containing layer comprises hafnium silicates, composites thereof, or combinations thereof.
17. The method of claim 13, wherein the acid solution comprises a hydrofluoric acid solution.
18. The method of claim 13, wherein the hydrogen containing gas is hydrogen (H2) gas and wherein the oxygen containing gas is nitrous oxide (N2O) gas.
19. The method of claim 13, wherein the ratio of oxygen containing gas to hydrogen containing gas is between about 65:35 and about 99.9:0.1.
20. The method of claim 13, further comprising introducing a non-reactive gas during the step of introducing a hydrogen containing gas and an oxygen containing gas.
21. The method of claim 20, wherein the non-reactive gas comprises helium gas.
22. The method of claim 13, wherein the substrate is at a temperature between about 400 C. and about 1,250 C. during the step of introducing a hydrogen containing gas and an oxygen containing gas.
23. The method of claim 13, wherein the substrate is at a temperature between about 700 C. and about 900 C. during the step of introducing a hydrogen containing gas and an oxygen containing gas.
24. The method of claim 13, wherein the hydrogen containing gas and the oxygen containing gas are introduced to the surface of the substrate for a time period of about 1 minute or less.
25. The method of claim 13, wherein the hydrogen containing gas and the oxygen containing gas are introduced to the surface of the substrate for a time period of about 10 seconds or less.
26. The method of claim 13, wherein forming a hafnium containing layer comprises introducing a hafnium precursor and an oxygen containing compound.
27. A structure, comprising:
a substrate;
an interfacial layer formed over the substrate, the interfacial layer having a thickness of about 13 or less; and
one or more hafnium containing layers formed over the interfacial layer.
28. The structure of claim 27, wherein the interfacial layer has a thickness of about 6 or less.
29. The structure of claim 27, wherein the hafnium containing layer is amorphous.
30. The structure of claim 27, wherein the hafnium containing layer has a surface roughness (Rms) of about 0.4 nm or less.
31. The structure of claim 27, wherein the hafnium containing layer has a surface roughness (Rms) of about 0.3 nm or less.
32. The structure of claim 27, wherein the one or more hafnium containing layers are formed to a combined thickness of about 50 or less.
33. The structure of claim 27, wherein the hafnium containing layer is formed to a thickness of about 40 or less.
34. An integrated system for forming a hafnium containing high dielectric constant layer over a substrate, comprising:
one or more rapid thermal processing chambers adapted to generate steam by introducing a hydrogen containing gas and an oxygen containing gas;
one or more deposition chambers adapted to deposit a hafnium containing layer;
a transfer chamber in communication with the rapid thermal processing chambers and the deposition chambers; and
one or more load lock chambers.
35. The system of claim 34, wherein the rapid thermal processing chambers are adapted to introducing hydrogen (H2) gas and nitrous oxide (N2O) gas to generate steam.
36. The system of claim 34, wherein the deposition chambers are adapted to form a hafnium containing layer by introducing a hafnium precursor and an oxygen containing gas.
37. The system of claim 34, further comprising a cleaning module in communication with the load lock chambers.
38. The system of claim 37, wherein the cleaning module comprises one or more single-substrate clean chambers.
39. A method of forming a hafnium containing layer on a substrate, comprising:
remove native oxides from a surface of the substrate;
hydroxylating the surface of the substrate to form a hydroxylated surface; and
forming a hafnium containing layer over the hydroxylated surface.
40. The method of claim 39, wherein forming a hafnium containing layer comprises forming an interfacial layer to a thickness of about 13 or less.
41. The method of claim 39, wherein forming a hafnium containing layer comprises forming an interfacial layer to a thickness of about 6 or less.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A light-emitting diode illuminating equipment, comprising:
an illuminating apparatus comprising:
a heat-dissipating plate device comprising a first surface;
M first heat-conducting devices, each of the first heat-conducting devices comprising a first portion and a second portion, the second portion extending from the first portion and comprising a flat area end, the first portion being mounted on the first surface of the heat-dissipating plate device, M being a natural number;
N diode light-emitting devices, each of the diode light-emitting devices being disposed on the flat area end of one of the first heat-conducting devices and converting an electric energy into a light, N being a natural number, N being larger or equal to M; and
a hollow barrel comprising a circumference, the hollow barrel being engaged through the circumference to the heat-dissipating plate device to form a space for accommodating the first heat-conducting devices and the diode light-emitting devices; and
a replaceable shell detachable to be engaged to the hollow barrel.
2. The light-emitting diode illuminating equipment of claim 1, wherein the illuminating apparatus comprises a transparent shield engaged to the hollow barrel.
3. The light-emitting diode illuminating equipment of claim 1, wherein the replaceable shell is made of heat-conducting material.
4. The light-emitting diode illuminating equipment of claim 1, wherein the replaceable shell comprises a transparent shield for covering the diode light-emitting devices.
5. The light-emitting diode illuminating equipment of claim 1, wherein the hollow barrel comprises a first fixing column, and the replaceable shell is detachable to be engaged to the first fixing column.
6. The light-emitting diode illuminating equipment of claim 5, wherein the hollow barrel comprises a second fixing column, and the illuminating apparatus is detachable to be engaged through the second fixing column to a support.
7. The light-emitting diode illuminating equipment of claim 1, wherein the replaceable shell comprises a clamping portion, the hollow barrel comprises a fixed portion, and the clamping portion is detachable to be engaged to the fixed portion.
8. The light-emitting diode illuminating equipment of claim 1, wherein the hollow barrel is made of magnetic material, the replaceable shell comprises a magnet, and the replaceable shell is magnetized through the magnet on the hollow barrel.
9. The light-emitting diode illuminating equipment of claim 1, wherein the illuminating apparatus comprises a partition plate device disposed in the hollow barrel to divide the space into a first room and a second room, the partition plate device comprises P first holes, each of the diode light-emitting devices corresponds to one of the first holes, P is a natural number, and P is smaller or equal to N.
10. The light-emitting diode illuminating equipment of claim 9, wherein the partition plate device is capable of insulating heat.
11. The light-emitting diode illuminating equipment of claim 9, wherein the illuminating apparatus comprises a heat-insulating plate device disposed in the first room, the heat-insulating plate device comprises M second holes, and the second portion of each of the first heat-conducting devices corresponds to one of the second holes and passes through the corresponding second hole.
12. The light-emitting diode illuminating equipment of claim 1, wherein the heat-dissipating plate device comprises M first grooves formed on the first surface of the heat-dissipating plate device, and the first portion of each of the first heat-conducting devices is mounted on corresponding one of the first grooves.
13. The light-emitting diode illuminating equipment of claim 12, wherein a heat-conducting material is filled between the first portion of each of the first heat-conducting devices and the corresponding first groove.
14. The light-emitting diode illuminating equipment of claim 1, wherein the illuminating apparatus comprises a plurality of second heat-conducting devices mounted on the first surface of the heat-dissipating plate device.
15. The light-emitting diode illuminating equipment of claim 14, wherein the heat-dissipating plate device comprises a plurality of second grooves formed on the first surface of the heat-dissipating plate device, and each of the second heat-conducting devices is mounted on corresponding one of the second grooves.
16. The light-emitting diode illuminating equipment of claim 15, wherein a heat-conducting material is filled between each of the second heat-conducting devices and the corresponding second groove.
17. The light-emitting diode illuminating equipment of claim 1, wherein the illuminating apparatus comprises a plurality of heat-dissipating fins, the heat-dissipating plate device comprises a second surface opposite to the first surface, and the heat-dissipating fins extend from the second surface and are exposed to air.
18. The light-emitting diode illuminating equipment of claim 17, wherein the illuminating apparatus comprises a plurality of second heat-conducting devices mounted on the second surface of the heat-dissipating plate device.
19. The light-emitting diode illuminating equipment of claim 1, wherein the illuminating apparatus comprises a heat-insulating ring, and the hollow barrel is engaged through the heat-insulating ring to the heat-dissipating plate device.
20. The light-emitting diode illuminating equipment of claim 1, wherein the flat area of the second portion of each of the first heat-conducting devices is at an end of the first heat-conducting device.
21. A light-emitting diode illuminating equipment, comprising:
an illuminating apparatus comprising:
a heat-dissipating plate device comprising a first surface;
M first heat-conducting devices, each of the first heat-conducting devices comprising a first portion and a second portion, the second portion extending from the first portion and comprising a flat area end, the first portion being mounted on the first surface of the heat-dissipating plate device, M being a natural number;
N diode light-emitting devices, each of the diode light-emitting devices being disposed on the flat area end of one of the first heat-conducting devices and converting an electric energy into a light, N being a natural number, N being larger or equal to M; and
a hollow barrel comprising a circumference, the hollow barrel being engaged through the circumference to the heat-dissipating plate device to form a space for accommodating the first heat-conducting devices and the diode light-emitting devices; and
a replaceable shell detachable to be engaged to the heat-dissipating plate device.