1. A polyalkene amine formulation, comprising:
at least one polyalkene amine in a solvent,
wherein the formulation has at least one of the following low temperature properties:
a) a cloud point less than or equal to \u221228\xb0 C. determined according to DIN ISO 3015 or DIN EN 23015;
b) a pour point less than or equal to \u221227\xb0 C. determined according to DIN ISO 3016; andor
c) no crystalline precipitates after storage at a temperature in the region of about \u221235\xb0 C.;
wherein the solvent is selected from mixtures of:
S1) at least one n- or iso-C10-C14 paraffin,
S2) at least one C10-C14 naphthene; and
wherein S1 and S2 are present in mixing ratio of from 10:90 to 90:10.
2. The formulation according to claim 1, wherein the pour point ranges from about \u221227 to \u221255\xb0 C. andor the cloud point ranges from about \u221228 to \u221251\xb0 C.
3. The formulation according to claim 1, wherein the solvent has
a density at 15\xb0 C. according to ASTM D 4052 and EN ISO 12185-1996 in the range from about 650 to 900 kgm3, andor
a viscosity at 20\xb0 C. according to ASTM D 445 in the range from about 1.0 to 5.0 mm2s.
4. The formulation according to claim 1, wherein the polyalkene moiety of the polyalkene amine is a polymerization product of identical or different, straight-chain or branched C2-C6 olefin monomers.
5. The formulation according to claim 4, wherein the polyalkene moiety of the polyalene amine has a number-average molecular weight Mn of from about 200 to 10 000.
6. The formulation according to claim 5, wherein the polyalkene moiety of the polyalene amine is derived from iso-butene or an isobutenic monomer mixture.
7. The formulation according to claim 6, wherein the polyalkene moiety of the polyalene amine is a polyisobutene.
8. The formulation according to claim 1, wherein the polyalkene amine is a polyisobutene amine which is derived from a polyisobutene having at least one of the following properties:
a) a fraction of vinylidene double bonds of at least 70 mol %, based on polyisobutene;
b) a polyisobutene polymer structure comprises at least 85% by weight of isobutene units; and
c) a polydispersity in the range from 1.05 to 7.
9. The formulation according to claim 1, wherein the polyalkene amine is a reaction product of a polyalkene with an amine of the following general formula I:
HNR1R2\u2003\u2003(I)
wherein
R1 and R2 are each independently H, a C1-C18-alkyl, C2-C18-alkenyl, C4-C18-cycloalkyl, C1-C18-alkylaryl, hydroxy-C1-C18-alkyl, poly(oxyalkyl), polyalkylene polyamine or a polyalkylene amine radical; or, together with the nitrogen atom to which they are bonded, are a heterocyclic ring.
10. The formulation according to claim 1, wherein the polyalkene amine is a polyisobutene amine is the reaction product of a hydroformylation and subsequent reductive amination of reactive polyisobutene.
11. The formulation according to claim 1, wherein the solvent is the process solvent of hydroformylation and subsequent reductive amination of reactive polyisobutene.
12. A polyisobutene formulation, comprising:
polyisobutene amine in a mixture comprising
a solvent,
wherein polyisobutene amine is present in a fraction of at least about 63% by weight, based on a total weight of the mixture;
wherein the solvent has
a density at 15\xb0 C. according to ASTM D 4052 and EN ISO 12185-1996 in the range from about 650 to 900 kgm3, andor
a viscosity at 20\xb0 C. according to ASTM D 445 in the range from about 1.0 to 5.0 mm2s;
wherein the solvent is selected from mixtures of:
S1) at least one n- or iso-C10-C14 paraffin,
S2) at least one C10-C14 naphthene; and
wherein S1 and S2 are present in a mixing ratio of from 10:90 to 90:10.
13. A fuel or lubricant composition, comprising:
in a majority of a fuel or lubricant, an amount, effective as an additive, of a formulation according to claim 1.
14. An printing ink, comprising:
as an additive the formulation according to claim 1.
15. A method for improving the intake system-cleaning action of a gasoline fuel, comprising:
adding the formulation according to claim 1 to a gasoline fuel, to obtain a mixture; and
contacting the mixture with said intake system.
16. An additive package, comprising:
a formulation according to claim 1, optionally in combination with at least one further coadditive.
17. A method for improving the low temperature performance of polyisobutene amine, comprising:
adding a mixture of solvent S1 and S2 to polyisobutene amine;
wherein
S1) is at least one n- or iso-C10 -C14 paraffin,
S2) is at least one C10C14 naphthene;
wherein S1 and S2 are present in a mixing ratio of from 10:90 to 90:10.
18. A process for preparing a polyalkene amine formulation according to claim 1, wherein
a) dissolving a polyalkene in a solvent mixture, to obtain a solution;
wherein said polyalkene is a polymerization product of identical or different, straight-chain or branched C2-C6 olefin monomers;
wherein said solvent mixture comprises
S1) at least one n- or iso-C10-C14 paraffin,
S2) at least one C10-C14 naphthene; and
wherein S1 and S2 are present in a mixing ratio of from 10:90 to 90:10;
b) hydroformylating the solution in the presence of CO and H2, to obtain an oxo product; and
c) aminating said oxo product under hydrogenating conditions in the presence of an amine of the following formula I
HNR1R2\u2003\u2003(I)
wherein
R1 and R2 are each independently H, a C1-C18-alkyl, C2-C18-alkenyl, C4-C18-cycloalkyl, C1-C18-alkylaryl, hydroxy-C1-C18-alkyl, poly(oxyalkyl), polyalkylene polyamine or a polyalkylene imine radical; or, together with the nitrogen atom to which they are bonded, are a heterocyclic ring.
19. The process according to claim 18, wherein the solution in stage a) has solvent fraction of at most 40% by weight based on a total weight of the solution.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of removing a low-k dielectric layer from a wafer, the low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, the method comprising:
(a) fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material having a size of from about 1 to about 6 micrometers; and
(b) polishing the wafer.
2. A method according to claim 1 wherein (a) comprises fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material comprising diamond.
3. A method according to claim 1 wherein (a) comprises fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material comprising cubic boron nitride.
4. A method according to claim 1 wherein (a) comprises fine grinding the low-k dielectric layer to remove a thickness of from about 0.5 to about 4 micrometers.
5. A method according to claim 1 wherein (b) comprises polishing the wafer by chemical mechanical polishing.
6. A method according to claim 5 comprising polishing the wafer by rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 while applying a polishing slurry between the wafer and polishing pad.
7. A method according to claim 5 comprising polishing the wafer with a polishing slurry comprising silica particles in de-ionized water.
8. A method according to claim 5 wherein the wafer comprises silicon material below the low-k dielectric layer, and wherein (b) comprises polishing away a thickness of less than about 8 microns of the silicon material.
9. A method according to claim 1 further comprising immersing a surface of the low-k dielectric layer in an etching solution.
10. A method according to claim 9 wherein the etching solution comprises at least one of:
(i) HF and H2SO4;
(ii) HF and NH4F; and
(iii) H2SO4 and H2O2.
11. A method according to claim 1 further comprising exposing the surface of the low-k dielectric layer to an oxygen-containing gas to oxidize the surface.
12. A method according to claim 1 further comprising:
(c) providing a removable layer on the wafer;
(d) forming the low-k dielectric layer over the removable layer; and
(e) etching the removable layer from the wafer.
13. A method according to claim 1 further comprising the initial steps of (1) processing a wafer comprising a test wafer to form the low-k dielectric layer on the wafer, and (2) determining at least one of a thickness, particle count, or composition of the low-k dielectric layer.
14. A method according to claim 1 wherein the wafer comprises a production wafer having a processed low-k dielectric layer.
15. A method according to claim 1 wherein the low-k dielectric layer further comprises hydrogen.
16. A method according to claim 1 further comprising re-forming the low-k dielectric layer on the wafer.
17. A method of removing a low-k dielectric layer from a wafer, the low-k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, the method comprising:
(a) fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material (i) comprising diamond or cubic boron nitride, and (ii) having a size of from about 1 micrometer to about 6 micrometers; and
(b) polishing the wafer by chemical mechanical polishing.
18. A method according to claim 17 wherein (a) comprises fine grinding the low-k dielectric layer to remove a thickness of from about 0.5 micrometers to about 4 micrometers.
19. A method according to claim 17 comprising polishing the wafer by rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 while applying a polishing slurry between the wafer and polishing pad.
20. A method according to claim 19 comprising polishing the wafer using a polishing slurry comprising silica particles in de-ionized water.
21. A method according to claim 17 wherein the wafer comprises silicon material below the low-k dielectric layer, and wherein (b) comprises polishing away a thickness of less than about 8 microns of the silicon material.
22. A method of removing a low-k dielectric layer from a wafer, the low- k dielectric layer having a k value of less than about 3 and comprising silicon, oxygen and carbon, and the method comprising:
(a) fine grinding the low-k dielectric layer with a grinding surface comprising bonded particles of abrasive material (i) comprising diamond or cubic boron nitride, and (ii) having a size of from about 1 micrometer to about 6 micrometers; and
(b) polishing the wafer by rotating the surface of the wafer against a polishing pad having a hardness of at least about 40 while applying a polishing slurry between the wafer and polishing pad.
23. A method according to claim 22 comprising polishing the wafer using a polishing slurry comprising silica particles in de-ionized water.