1. A semiconductor light-emitting diode, comprising:
a substrate;
an n-GaN layer;
a quantum well layer;
an electron blocking layer having a plurality of first AlGaN layers and a plurality of second AlGaN layers; and
a p-GaN layer;
wherein:
the n-GaN layer, the quantum well layer, the electron blocking layer, and the p-GaN layer are sequentially stacked on the substrate;
the first AlGaN layers and the second AlGaN layers are alternately stacked;
the adjacent two layers of the first AlGaN layers and the second AlGaN layers have different composition ratios of Al;
the composition ratios of Al in the first AlGaN layers gradually change with increasing distance from the quantum well layer;
the composition ratios of Al in the second AlGaN layers are the same; and
the composition ratios of Al in the first AlGaN layers first decrease and then increase with increasing distance from the quantum well layer, or the composition ratios of Al in the first AlGaN layers first increase and then decrease with increasing distance from the quantum well layer.
2. A semiconductor light-emitting diode, comprising:
a substrate;
an n-GaN layer;
a quantum well layer;
an electron blocking layer having a plurality of first AlGaN layers and a plurality of second AlGaN layers; and
a p-GaN layer;
wherein:
the n-GaN layer, the quantum well layer, the electron blocking layer, and the p-GaN layer are sequentially stacked on the substrate;
the first AlGaN layers and the second AlGaN layers are alternately stacked;
the adjacent two layers of the first AlGaN layers and the second AlGaN layers have different composition ratios of Al;
the composition ratios of Al in the first AlGaN layers gradually change with increasing distance from the quantum well layer;
the composition ratios of Al in the second AlGaN layers gradually change with increasing distance from the quantum well layer; and
the composition ratios of Al in the first AlGaN layers have the same changing trend as the composition ratios of Al in the second AlGaN layers; and
the composition ratios of Al in the first AlGaN layers first decrease and then increase with increasing distance from the quantum well layer, and the composition ratios of Al in the second AlGaN layers first decrease and then increase with increasing distance from the quantum well layer; or the composition ratios of Al in the first AlGaN layers first increase and then decrease with increasing distance from the quantum well layer, and the composition ratios of Al in the second AlGaN layers first increase and then decrease with increasing distance from the quantum well layer.
3. The semiconductor light-emitting diode of claim 1, wherein the first AlGaN layers and the second AlGaN layers have a total number of between 2 and 40.
4. The semiconductor light-emitting diode of claim 1, wherein a difference between the composition ratios of Al in the adjacent two layers of the first AlGaN layers and the second AlGaN layers is between 0.05 and 0.15.
5. The semiconductor light-emitting diode of claim 1, wherein a thickness of the electron blocking layer is between 20 and 50 nm, a thickness of each of the first AlGaN layer is between 1 and 3 nm, and a thickness of each of the second AlGaN layer is between 1 and 3 nm.
6. The semiconductor light-emitting diode of claim 1, wherein the highest composition ratio of Al in the first AlGaN layers and the highest composition ratio of Al in the second AlGaN layers are between 0.15 and 0.5, respectively.
7. A method for manufacturing a semiconductor light-emitting diode of claim 1, the method comprising providing the substrate, and sequentially growing the n-GaN layer, the quantum well layer, the electron blocking layer, and the p-GaN layer on the substrate.
8. The semiconductor light-emitting diode of claim 2, wherein the first AlGaN layers and the second AlGaN layers have a total number of between 2 and 40.
9. The semiconductor light-emitting diode of claim 2, wherein a difference between the composition ratios of Al in the adjacent two layers of the first AlGaN layers and the second AlGaN layers is between 0.05 and 0.15.
10. The semiconductor light-emitting diode of claim 2, wherein a thickness of the electron blocking layer is between 20 and 50 nm, a thickness of each of the first AlGaN layers is between 1 and 3 nm, and a thickness of each of the second AlGaN layers is between 1 and 3 nm.
11. The semiconductor light-emitting diode of claim 2, wherein the highest composition ratio of Al in the first AlGaN layers and the highest composition ratio of Al in the second AlGaN layers are between 0.15 and 0.5, respectively.
12. A method for manufacturing a semiconductor light-emitting diode of claim 2, the method comprising providing the substrate, and sequentially growing the n-GaN layer, the quantum well layer, the electron blocking layer, and the p-GaN layer on the substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for performing by a proxy discovery of a maximum transmission unit of a path between a client and a server, the method comprising:
(a) increasing, by a first proxy, a size of a path maximum transmission unit (PMTU) by a predetermined amount for transmitting network packets between a client and a server via the first proxy;
(b) repacketizing, by the first proxy, network packets received from the client for transmission to the server into packet sizes in accordance with the size of the PMTU;
(c) determining, by the first proxy, a first network packet of the repacketized network packets with a round trip time greater than a previous round trip time for networks packets transmitted to the server; and
(d) increasing, by the first proxy, the size of the PMTU by the predetermined amount responsive to receiving an acknowledgement for the first network packet without a fragmentation indication.
2. The method of claim 1, wherein step (a) further comprises increasing, by the first proxy, the PMTU in response to not receiving an indication of fragmentation from a second proxy within a predetermined time period.
3. The method of claim 1, wherein step (c) further comprises recording a sequence number of the first network packet with the round trip time that is greater than the previous round trip time.
4. The method of claim 3, wherein step (d) further comprises determining by the first proxy that the acknowledgement was received for the recorded sequence number.
5. The method of claim 1, wherein step (b) further comprises transmitting, by the first proxy, to the server network packets from the client repacketized in accordance with the size of the PMTU.
6. The method of claim 1, further comprising receiving, by the first proxy, an indication of fragmentation from a second proxy.
7. The method of claim 6, further comprising undoing, by the first proxy, a last increase in the size of the PMTU in response to receiving the indication of the fragmentation from the second proxy.
8. The method of claim 1, wherein step (b) further comprises identifying, by the proxy, that the repacketized packets are not prohibited from being fragmented.
9. The method of claim 1, further comprising receiving, by a second proxy, the repacketized packets transmitted from the first proxy and determining whether fragmentation has occurred.
10. The method of claim 1, wherein step (a) further comprising increasing, by the first proxy, the size of the PMTU by the predetermined amount for each round trip time in which an indication of fragmentation is not received by the first proxy.
11. A system of proxies performing discovery of a maximum transmission unit of a path between a client and a server, the system comprising:
a first proxy increasing a size of a path maximum transmission unit (PMTU) by a predetermined amount for transmitting network packets between a client and a server via the first proxy and the first proxy repacketing network packets received from the client for transmission to the server into packet sizes in accordance with the size of the PMTU;
a second proxy detecting whether a first network packet from transmission of repacketized packets from the first proxy is fragmented and transmitting to the first proxy an acknowledgement of the first network packet without a fragment indicator;
wherein the first proxy determines the first network packet of the repacketized network packets has a round trip time greater than a previous round trip time for networks packets transmitted to the server, and the first proxy increases the size of the PMTU by the predetermined amount responsive to receiving the acknowledgement for the first network packet without a fragmentation indication.
12. The system of claim 11, wherein the first proxy increases the PMTU in response to not receiving an indication of fragmentation from the second proxy within a predetermined time period.
13. The system of claim 11, wherein the first proxy records a sequence number of the first network packet with the round trip time that is greater than the previous round trip time.
14. The system of claim 13, wherein the first proxy determines that the acknowledgement was received for the recorded sequence number.
15. The system of claim 11, wherein the first proxy transmits to the server via the second proxy network packets repacketized in accordance with the size of the PMTU.
16. The system of claim 11, wherein the first proxy receives an indication of fragmentation from the second proxy.
17. The system of claim 16, wherein the first proxy undoes a last increase in the size of the PMTU in response to receiving the indication of the fragmentation from the second proxy.
18. The system of claim 11, wherein the first proxy identifies that the repacketized packets are not prohibited from being fragmented.
19. The system of claim 11, wherein the second proxy receives the repacketized packets transmitted from the first proxy and determines whether fragmentation has occurred.
20. The system of claim 11, wherein the first proxy increases the size of the PMTU by the predetermined amount for each round trip time in which an indication of fragmentation is not received by the first proxy.