1. A micropattern shape measuring system comprising:
a measuring mechanism emitting an electron beam;
a measuring mechanism emitting a light beam;
a storage unit for storing widths of a plurality of patterns formed in a test pattern place in a scribe line area of a wafer formed to divide the wafer into a plurality of semiconductor devices, said widths being obtained by irradiating the plurality of patterns with the light beam, and widths of the plurality of patterns obtained by irradiating the plurality of patterns with the electron beam; and
a calculation unit for calculating an amount of change in width of each of the plurality of patterns caused while being irradiated with the electron beam, and from the width of a dummy pattern formed in a semiconductor device, which is measured by irradiating the dummy pattern with the electron beam, and from said amount of width change, calculating a width which the dummy pattern should have had before the dummy pattern is irradiated with the electron beam, and wherein said calculator unit calculates the amount of change in width of each of the plurality of patterns by comparing the widths measured by the light beam to the widths measured by the electron beam.
2. A micropattern shape measuring system according to claim 1, wherein the patterns in the test pattern place are formed by the same manufacture process as the patterns in the semiconductor device and the widths of the patterns in the test pattern place can be measured with the light beam.
3. A micropattern shape measuring method comprising the steps of:
irradiating with a light beam a plurality of patterns formed in a test pattern place in a scribe line area of a wafer formed to divide the wafer into a plurality of semiconductor devices so as to measure the widths of the plurality of patterns, and storing the measured widths;
irradiating the plurality of patterns with an electron beam so as to measure the widths of the plurality of patterns, and storing the measured widths;
calculation an amount of change in width of each of the plurality of patterns, and storing the amount of width change; and
calculating a width which a dummy pattern formed in a semiconductor device should have had before the dummy pattern is irradiated with the electron beam, from the width of the dummy pattern, which is measured by irradiating the dummy pattern with the electron beam, and from said amount of width change, and wherein the amount of change in width of each of the plurality of patterns is calculated by comparing the widths measured by the light beam to the widths measured by the electron beam.
4. A micropattern shape measuring method according to claim 3, wherein the patterns in the test pattern place are formed by the same manufacture process as the patterns in the semiconductor device and the widths of the patterns in the test pattern place can be measured with the light beam.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-36. (canceled)
37. A soap composition, comprising:
saponified natural oil compounds;
wherein the saponified natural oil compounds comprise saponified self-metathesized natural oil compounds.
38. The soap composition of claim 37, wherein the saponified self-metathesized natural oil compounds comprise saponified hydrogenated self-metathesized natural oil compounds.
39. The soap composition of claim 37, further comprising saponified non-metathesized natural oil compounds.
40. The soap composition of claim 38, further comprising saponified non-metathesized natural oil compounds.
41. The soap composition of claim 37, further comprising saponified hydrogenated non-metathesized natural oil compounds.
42. The soap composition of claim 38, further comprising saponified hydrogenated non-metathesized natural oil compounds.
43. The soap composition of claim 39, further comprising saponified hydrogenated non-metathesized natural oil compounds.
44. The soap composition of claim 40, further comprising saponified hydrogenated non-metathesized natural oil compounds.
45. The soap composition of claim 37, wherein the degree of saponification of the soap composition ranges from 10% to 100%, based on the total weight of natural oil compounds in the composition.