1. A support stand assembly comprising:
a base;
a stopper rotatably disposed in the base;
a guiding member engaged with the stopper and movably disposed in the base;
a resilient member disposed between the guiding member and the base;
a connecting member abutting the guiding member and movably disposed in the base; and
a supporting member pivotally connected with the connecting member and movably disposed on the base.
2. The support stand assembly of claim 1, wherein the base comprises a first main body, a first receiving space being defined in the first main body, the connecting member and the supporting member being movably disposed on the bottom of the first receiving space.
3. The support stand assembly of claim 2, wherein the base further comprises a connecting portion, the connecting portion extending from the first main body along a direction substantially perpendicular to the first main body, a second receiving space being defined in the connecting portion, the stopper being rotatably being disposed on the bottom of the second receiving space.
4. The support stand assembly of claim 3, further comprising a liner received in the second receiving space of the connecting portion, wherein a third receiving space is defined on the liner, a first through hole being disposed on the bottom of the third receiving space, four latching notches being defined in the sidewall of the first through hole, the stopper comprising a first cam with a latching protrusion, the latching protrusion of the first cam latching with the latching notches when rotated in one direction.
5. The support stand assembly of claim 4, wherein the four latching notches are evenly spaced from each other.
6. The support stand assembly of claim 4, wherein the stopper further comprises a shaft, the shaft being matched with the first cam and capable of rotating.
7. The support stand assembly of claim 6, wherein the stopper further comprises an elastic member, the elastic member being sleeved around the shaft.
8. The support stand assembly of claim 7, wherein the elastic member is a spring.
9. The support stand assembly of claim 7, wherein the stopper further comprises a gear, the gear being movably connected to the shaft above the elastic member.
10. The support stand assembly of claim 4, wherein the guiding member comprises a second main body, a first resisting portion, and a positioning portion, the second main body comprising a first surface and a second surface opposite the first surface, the positioning portion being disposed on an end of the first surface of the second main body, the first resisting portion extending from an end of the second surface of the second main body along a direction substantially perpendicular to the second surface.
11. The support stand assembly of claim 10, wherein the second main body comprises a rack and a supporting board, the rack comprising a number of teeth, the length of each tooth diminishing gradually in a direction away from the positioning portion of the guiding member, the supporting board comprising an inclined plane facing the rack, the gradient of the inclined plane diminishing gradually in the direction away from the positioning portion of the guiding member correspondingly to the gradient of the rack.
12. The support stand assembly of claim 11, wherein the second main body further comprises a stopping block, the stopping block being disposed over the rack and extended from the first surface of the second main body along a direction substantially perpendicular to the first surface.
13. The support stand assembly of claim 10, wherein the first receiving space and the second receiving space share a common first sidewall, a first cutout being defined in the first sidewall, a second cutout being defined in a third sidewall of the third receiving space corresponding to the first cutout, the third sidewall of the third receiving space being closed to the first sidewall.
14. The support stand assembly of claim 13, wherein the first cutout comprises a first supporting surface parallel to the bottom of the second receiving space, the second cutout comprising a second supporting surface corresponding to the first supporting surface, the first resisting portion comprising a resisting block and a sliding block, the resisting block comprising a surface facing the first supporting surface of the first cutout, the sliding block being extended from the surface of the resisting block along a direction substantially perpendicular to the surface and placed on the first supporting surface of the first cutout and the second supporting surface of the second cutout, the resisting block being received in the third receiving space and extended into the first receiving space of the first main body.
15. The support stand assembly of claim 14, wherein the connecting member comprises a second resisting portion and two arms, the second resisting portion abutting against the resisting block of the first resisting portion, the arms being disposed on two opposite side of an end portions of the second resisting portion, the arms and the second resisting portion cooperatively forming an h shape.
16. The support stand assembly of claim 15, wherein the connecting member further comprises a pivot, two second through holes being defined in the arms corresponding to the pivot, the supporting member comprising a pressing portion and a twisting portion away from the pressing portion, the twisting portion defining a third through hole corresponding to the pivot, the connecting member being pivotally connected to the supporting member via the pivot being extended through the second through holes and the third through hole.
17. The support stand assembly of claim 10, wherein the positioning portion comprises a side panel and a post, the side panel being disposed on the second surface of the second main body and extended from an end of the second surface along a direction substantially perpendicular to the second surface, the side panel comprising a surface facing the first recess, the post being disposed on the surface of the side panel and extended from the surface along a direction substantially perpendicular to the surface and near the resisting portion, the resilient member being sleeved around the post.
18. The support stand assembly of claim 17, wherein the first main body comprises an end portion away from the connecting portion, the second receiving space comprising a second sidewall adjacent to the first sidewall of the second receiving space and away from the end portion of the first main body, a first recess being defined in the third sidewall of the second receiving space, the third receiving space comprising a fourth sidewall adjacent to the third sidewall of the third receiving space, a second recess being defined in the fourth sidewall of the second receiving space corresponding to the first recess, the post being matched with the first and second recesses and projected from the first and second recesses.
19. The support stand assembly of claim 17, wherein the side panel is integrally formed with the second main body.
20. A digital photo frame comprising:
A housing defining an opening; and
a support stand assembly received in the opening of the housing comprising:
a base;
a stopper rotatably disposed in the base;
a guiding member engaged with the stopper and movably disposed in the base;
a resilient member disposed between the guiding member and the base;
a connecting member abutted against the guiding member and movably disposed on the base; and
a supporting member pivotally connected with the connecting member and movably disposed on the base.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a phase change memory device, comprising:
preparing a semiconductor substrate of a first conductivity type;
forming a first interlayer insulating layer on the semiconductor substrate;
patterning the first interlayer insulating layer to form a plurality of diode holes in the first interlayer insulating layer;
forming first semiconductor Patterns in lower regions of the diode holes;
forming second semiconductor patterns on the first semiconductor patterns;
forming cell electrodes on the second semiconductor patterns;
forming insulating contact spacers in the diode holes, wherein the insulating contact spacers are formed on sidewalls of the diode holes and on the cell electrodes;
forming lower electrodes in the diode holes, wherein the lower electrodes are formed on the insulating contact spacers and on the cell electrodes and wherein top surfaces of the lower electrodes are lower than a top surface of the first interlayer insulating layer and higher than a bottom surface of the first interlayer insulating layer;
forming phase change material patterns filling the diode holes, wherein the phase change material patterns are formed on the cell electrodes and on the insulating contact spacers, wherein the phase change material patterns extend over the top surface of the first interlayer insulating layer; and
forming upper electrodes on the phase change material pattern,
wherein the first semiconductor patterns are formed to have the first conductivity type or a second conductivity type different from the first conductivity type, and the second semiconductor patterns are formed to have the first conductivity type,
wherein forming the first and second semiconductor patterns comprises:
forming recessed semiconductor patterns filling lower regions in the diode holes;
doping lower regions of the recessed semiconductor patterns with impurities of the first conductivity type or impurities of the second conductivity type; and
doping upper regions of the recessed semiconductor patterns with impurities of the first conductivity type, and
wherein forming the recessed semiconductor patterns comprises:
forming a single crystalline semiconductor layer filling the diode holes using a selective epitaxial growth technique;
planarizing the single crystalline semiconductor layer to form single crystalline semiconductor patterns with flat top surfaces having the same level as a top surface of the first interlayer insulating layer; and
after forming the single crystalline semiconductor patterns, partially etching the single crystalline semiconductor patterns to recess the single crystalline semiconductor patterns.
2. The method according to claim 1, wherein the first interlayer insulating layer is formed of a single layer of insulating material.
3. The method according to claim 1, wherein the cell electrodes are formed of a metal silicide layer.
4. The method according to claim 3, wherein the metal silicide layer is formed using a salicide technique.
5. The method according to claim 3, wherein the metal silicide layer is a cobalt silicide layer, a nickel silicide layer, or a titanium silicide layer.
6. The method according to claim 1, wherein forming the insulating contact spacers comprises forming the insulating contact spacers prior to forming the phase change material patterns and the upper electrodes.
7. The method according to claim 6, wherein forming the lower electrodes comprises forming the lower electrodes on the cell electrodes exposed by the insulating contact spacers prior to forming the phase change material patterns and the upper electrodes.
8. The method according to claim 7, wherein forming the lower electrodes comprises:
forming a conductive layer on the semiconductor substrate having the insulating contact spacers formed thereon; and
etching back the conductive layer to form conductive layer patterns remaining on the cell electrodes.
9. The method according to claim 8, wherein the conductive layer is formed of a titanium nitride layer or a titanium aluminum nitride layer.
10. The method according to claim 1, wherein forming the phase change material patterns and the upper electrodes comprises:
sequentially forming a phase change material layer and an upper electrode layer on the semiconductor substrate having the cell electrodes formed thereon; and
patterning the upper electrode layer and the phase change material layer.
11. The method according to claim 10, wherein the phase change material layer is formed of a chalcogenide layer, and the upper electrode layer is formed of a titanium nitride layer or a titanium aluminum nitride layer.
12. The method according to claim 1, further comprising:
forming a second interlayer insulating layer on the semiconductor substrate having the upper electrodes formed thereon;
patterning the second interlayer insulating layer to form bit line contact holes exposing the upper electrodes; and
forming a plurality of parallel bit lines on the second interlayer insulating layer, wherein the bit lines are electrically connected to the upper electrodes through the bit line contact holes.