What is claimed is:
1. Engineered tissue comprising a suspension of anticoagulated plasma, a clotting agent and cells.
2. An engineered tissue as described in claim 1, wherein the cells are stem cells.
3. An engineered tissue as described in claim 2, wherein the stem cells are committed stem cells.
4. An engineered tissue as described in claim 2, wherein the suspension further comprises differentiation inducers.
5. An engineered tissue described in claim 1, wherein the engineered tissue has a predetermined shape and the suspension has substantially the same predetermined shape.
6. A method of manufacturing an engineered tissue comprising mixing cells with anticoagulated plasma and a clotting agent to form a suspension.
7. The method described in claim 6, wherein the cells are stem cells.
8. The method described in claim 7, wherein the stem cells are committed stem cells.
9. The method described in claim 7, wherein the step of mixing cells with anticoagulated plasma and a clotting agent further comprises mixing in differentiation inducers.
10. The method described in claim 7, further comprising the preliminary step of providing a mold defining a predetermined shape and then mixing the suspension inside the mold.
11. An extracellular matrix for promoting cell growth comprising a suspension of anticoagulated plasma and a clotting agent.
12. An extracellular matrix as described in claim 11, wherein the suspension further comprises preselected DNA.
13. A method of manufacturing an extracellular matrix for promoting cell growth comprising mixing anticoagulated plasma and a clotting agent to form a suspension.
14. A method of manufacturing an extracellular matrix having a predetermined shape, the method comprising:
preselecting a mold adapted to make the predetermined shape, and
filling the mold with a mixture of anticoagulated plasma, a clotting agent and cells.
15. A method for testing the effectiveness of cancer therapy treatments in vitro comprising:
manufacturing engineered tissue comprising anticoagulated plasma, a clotting agent and cancer cells;
preparing a plurality of samples of the engineered tissue;
subjecting a plurality of cancer therapy treatments to a respective plurality of samples of engineered tissue; and
evaluating the relative effectiveness of the cancer therapy treatment agents.
16. The method as described in claim 15, wherein the cancer cells are obtained from a patient who is in need of cancer therapy treatments.
17. An engineered tissue as described in claim 1, further comprising preselected DNA.
18. An engineered tissue as described in claim 17, wherein the preselected DNA is incorporated into the cells.
19. An engineered tissue as described in claim 18, wherein the preselected DNA is incorporated into the cells by using nonviral techniques.
20. The method described in claim 6 further comprising the step of adding sufficient fibrinolytic inhibitors at the time of mixture to prevent degradation of the resulting fibrin matrix before about two days.
21. The method described in claim 6, wherein the anticoagulated plasma contains a sufficient concentration of anticoagulates to prevent the resulting fibrin matrix formation from being compete until more than ten seconds after the mixture of anticoagulated plasma, clotting agent, and cells.
22. The method described in claim 6, further wherein the clotting agents have a low enough concentration to prevent the resulting fibrin matrix formation from being complete until more than ten seconds after the mixture of anticoagulated plasma, clotting agent, and cells.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 4.0 V or less when a forward current applied to the element is 20 mA.
2. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 4.5 V or less when a forward current applied to the element is 60 mA.
3. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 5.0 V or less when a forward current applied to the element is 120 mA.
4. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 5.5 V or less when a forward current applied to the element is 200 mA.
5. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 6.0 V or less when a forward current applied to the element is 350 mA.
6. The semiconductor light emitting element according to claim 1,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
7. The semiconductor light emitting element according to claim 1,
wherein the semiconductor light emitting element is a light emitting diode element.
8. The semiconductor light emitting element according to claim 1, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
9. The semiconductor light emitting element according to claim 8, wherein an area of the n-side ohmic electrode is 0.0012 cm2 or more, and equal to or less than the area of the rear face of the m-plane GaN substrate.
10. The semiconductor light emitting element according to claim 2,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
11. The semiconductor light emitting element according to claim 2,
wherein the semiconductor light emitting element is a light emitting diode element.
12. The semiconductor light emitting element according to claim 2, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
13. The semiconductor light emitting element according to claim 3,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
14. The semiconductor light emitting element according to claim 3,
wherein the semiconductor light emitting element is a light emitting diode element.
15. The semiconductor light emitting element according to claim 3, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
16. The semiconductor light emitting element according to claim 4,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
17. The semiconductor light emitting element according to claim 4,
wherein the semiconductor light emitting element is a light emitting diode element.
18. The semiconductor light emitting element according to claim 4, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
19. The semiconductor light emitting element according to claim 5,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
20. The semiconductor light emitting element according to claim 5,
wherein the semiconductor light emitting element is a light emitting diode element.
21. The semiconductor light emitting element according to claim 5, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
22. The semiconductor light emitting element according to claim 1, wherein the n-side ohmic electrode has a layered structure comprising a first portion which contacts the substrate formed of at least one metal selected from the group consisting of Ti, Cr, V, W, or ITO, and a second portion which is formed of at least one metal selected from the group consisting of Au, Cu or Ag.