1. A method of recovering a client clock comprising:
at a generator, receiving frame events indicative of frame boundaries;
at the generator, counting the amount of client data received between frame events to get a raw count,
at the generator, low pass filtering the raw count to get a smoothed value;
at a receiver, receiving an indication of the smoothed value; and
at the receiver, smoothing the indication using a low-pass filter and using the smoothed indication to produce a client data rate.
2. The method of claim 1, wherein the smoothed indication is divided by a frame event period to get client data rate.
3. The method of claim 2, wherein the receiver produces a clock from the client data rate.
4. The method of claim 3, wherein the clock is sent to a phase lock loop (PLL) to produce an improved clock.
5. The method of claim 1, wherein the receivers and generators are configurable for multiple protocols.
6. The method of claim 1, wherein the receivers and generators are configurable for optical protocols.
7. The method of claim 1, wherein the generator is adapted to map an ODUx signal into an OPUy signal where y is greater than x.
8. The method of claim 1, wherein the indication is a non-integer value.
9. The method of claim 1, wherein multiple configurable receivers and generators are on a single chip.
10. The method of claim 1, wherein in a Generic Framing Procedure (GFP) mode, client management frames are used to send the smoothed value as the indication.
11. The method of claim 1, wherein in an asynchronous mapping procedure (AMP) mode, the indication is a differential count produced from the smoothed count.
12. The method of claim 1, wherein a receiver sends outputs to multiple additional receivers configured for another protocol.
13. The method of claim 1, wherein the generator sends outputs to multiple additional generators.
14. The method of claim 1, wherein the indications and the smoothed values are timestamps and wherein the receiver and generator stores valid ranges of timestamps and keep any generated timestamp andor clock within the valid ranges.
15. The method of claim 1, wherein the generator stores a last known good rate value and upon a client signal fail, continues to send a signal at the last known good rate.
16. The method of claim 1, wherein the receiver continues to generate clocks andor frame event rates upon a signal failure.
17. An apparatus comprising:
multiple generators adapted to receive frame events and to count an amount of client data received between frame events to get a raw count, the multiple configurable generators adapted to low-pass filter the raw count to produce a smoothed value and to use the smoothed value to produce an indication of the smoothed value; and
multiple receivers adapted to smooth the indication using a low-pass filter and use the smoothed indication to produce a client data rate.
18. The apparatus of claim 17, wherein the smoothed indication is divided by a frame event period to get client data rate.
19. The apparatus of claim 18, wherein the receiver produces a clock from the client data rate.
20. The apparatus of claim 19, wherein the clock is sent to a phase lock loop (PLL) to produce an improved clock.
21. The apparatus of claim 17, wherein the receivers and generators are configurable.
22. The apparatus of claim 17, wherein the receivers and generators are configurable for optical protocols.
23. The apparatus of claim 17, wherein the generator is adapted to map an ODUx signal into an OPUy signal where y is greater than x.
24. The apparatus of claim 17, wherein the indication is a non-integer value.
25. The apparatus of claim 17, wherein in a Generic Framing Procedure (GFP) mode, client management frames are used to send the smoothed value as the indication.
26. The apparatus of claim 17, wherein in an asynchronous mapping procedure (AMP) mode, the indication is a differential count.
27. The apparatus of claim 17, wherein a receiver sends outputs to multiple additional receivers configured for another protocol.
28. The apparatus of claim 17, wherein the generator sends outputs to multiple additional generators.
29. The apparatus of claim 17, wherein the indications and the smoothed values are timestamps and wherein the receiver and generator stores valid ranges of timestamps and keep any generated timestamp andor clock within the valid ranges.
30. The apparatus of claim 17, wherein the generator stores a last known good rate value and upon a client signal fail, continues to send a signal at the last known good rate.
31. The apparatus of claim 17, wherein the receiver continues to generate clocks andor frame event rates upon a signal failure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An imager device, comprising:
a first substrate comprising an array of photosensitive elements formed thereon;
a first conductive layer formed above the first substrate;
a first conductive member extending through the first substrate, the first conductive member being conductively coupled to the first conductive layer;
a standoff structure formed above the first substrate;
a second conductive layer formed above the standoff structure, the second conductive layer being conductively coupled to the first conductive layer; and
an electrically powered device positioned above the standoff structure, the electrically powered device being electrically coupled to the second conductive layer.
2. The device of claim 1, wherein the first conductive layer is formed on a surface of the substrate.
3. The device of claim 1, wherein the first conductive member is a through-wafer interconnect structure.
4. The device of claim 1, wherein the standoff structure is positioned above the first conductive member.
5. The device of claim 1, wherein the second conductive layer is formed on a surface of the standoff structure.
6. The device of claim 1, wherein the electrically powered device comprises at least one of an electrically powered lens, an electrically powered aperture, an electrically powered filter and an electrically powered light.
7. The device of claim 1, wherein the first substrate comprises at least one of silicon, silicon germanium and an SOI structure.
8. The device of claim 1, wherein the first conductive layer comprises at least one of aluminum, titanium, copper and nickel.
9. The device of claim 1, wherein the second conductive layer comprises at least one of platinum, gold, titanium-aluminum, copper and copper-nickel.
10. The device of claim 1, further comprising a third conductive layer that conductively couples the electrically powered device to the second conductive layer.
11. The device of claim 1, further comprising a second substrate and third conductive layer formed on the second substrate, the third conductive layer being conductively coupled to the second conductive layer and the electrically powered device.
12. The device of claim 1, further comprising a second substrate having a second conductive member that extends through the second substrate, the second conductive member being conductively coupled to the second conductive layer.
13. An imager device, comprising:
a first substrate comprising an array of photosensitive elements;
an electrically powered device positioned above the first substrate;
a standoff structure positioned above the first substrate; and
a first conductive member extending through the first substrate, the first conductive member being positioned at least partially under the standoff structure, wherein the first conductive member defines a portion of a conductive path for the electrically powered device.
14. The device of claim 13, further comprising a first conductive layer that is formed on a surface of the first substrate and wherein the first conductive layer is conductively coupled to the first conductive member.
15. The device of claim 13, wherein the first conductive member is a through-wafer interconnect structure.
16. The device of claim 13, wherein the entirety of the first conductive member is positioned under the standoff structure.
17. The device of claim 14, further comprising a second conductive layer formed above the standoff structure and wherein the second conductive layer is conductively coupled to the first conductive layer.
18. The device of claim 17, further comprising a third conductive layer that conductively couples the electrically powered device to the second conductive layer.
19. The device of claim 17, further comprising a second substrate and third conductive layer formed on the second substrate, the third conductive layer being conductively coupled to the second conductive layer and the electrically powered device.
20. The device of claim 17, further comprising a second substrate having a second conductive member that extends through the second substrate, the second conductive member being conductively coupled to the second conductive layer.
21. An imager device, comprising:
a first substrate comprising an array of photosensitive elements formed thereon;
a first conductive layer formed on the first substrate;
a first conductive member extending through the first substrate, the first conductive member being conductively coupled to the first conductive layer;
a standoff structure formed above the first conductive member;
a second conductive layer formed above the standoff structure, the second conductive layer being conductively coupled to the first conductive layer; and
an electrically powered device positioned above the standoff structure, the electrically powered device being electrically coupled to the second conductive layer.
22. The device of claim 21, wherein the first conductive member is a through-wafer interconnect structure.
23. The device of claim 21, wherein the second conductive layer is formed on a surface of the standoff structure.
24. An imager device, comprising:
a first substrate comprising an array of photosensitive elements formed thereon;
a first conductive layer formed above the first substrate;
a first conductive member extending through the first substrate, the first conductive member being conductively coupled to the first conductive layer;
a standoff structure formed above the first substrate;
a second conductive layer formed above the standoff structure, the second conductive layer being conductively coupled to the first conductive layer;
an electrically powered device positioned above the first substrate; and
a second substrate positioned above the standoff structure, the second substrate having a second conductive member extending through the second substrate, the second conductive member being conductively coupled to the second conductive layer and the electrically powered device.
25. The device of claim 24, wherein the first conductive layer is formed on a surface of the first substrate.
26. The device of claim 24, wherein the first conductive member is a through-wafer interconnect structure.
27. The device of claim 24, wherein the second conductive member is a through-wafer interconnect structure.
28. The device of claim 24, wherein the standoff structure is positioned under the second conductive member.
29. The device of claim 24, wherein the second conductive layer is formed on a surface of the standoff structure.
30. The device of claim 24, wherein the electrically powered device comprises at least one of an electrically powered lens, an electrically powered aperture, an electrically powered filter and an electrically powered light.
31. The device of claim 24, further comprising a third conductive layer formed on the second substrate, the third conductive layer being conductively coupled to the electrically powered device and the second conductive member extending through the second substrate.
32. The device of claim 24, further comprising a bond pad formed on a surface of the second substrate, the bond pad being conductively coupled to the second conductive member.
33. An imager device, comprising:
a first substrate comprising an array of photosensitive elements;
a first conductive layer formed on the first substrate;
a first conductive member extending through the first substrate, the first conductive member being conductively coupled to the first conductive layer;
a standoff structure formed above the first conductive member;
a second conductive layer formed above the standoff structure, the second conductive layer being conductively coupled to the first conductive layer; and
an electrically powered device positioned above the standoff structure, the electrically powered device comprising a second substrate having a second conductive member extending through the second substrate, the second conductive member being positioned above the standoff structure and being conductively coupled to the second conductive layer.
34. The device of claim 33, wherein the first conductive member is a through-wafer interconnect structure.
35. The device of claim 33, wherein the second conductive member is a through-wafer interconnect structure.
36. The device of claim 33, wherein the second conductive layer is formed on a surface of the standoff structure.
37. The device of claim 33, further comprising a third conductive layer formed on the second substrate, the third conductive layer being conductively coupled to the electrically powered device and the second conductive member extending through the second substrate.
38. A method, comprising:
providing a first substrate comprising a first conductive layer and an array of photosensitive elements;
forming a conductive member that extends through the first substrate and is conductively coupled to the first conductive layer;
forming a standoff structure above the first substrate;
forming a patterned conductive layer above the standoff structure, the patterned conductive layer being conductively coupled to the first conductive layer; and
conductively coupling an electrically powered device to the patterned conductive layer positioned above the standoff structure.
39. The method of claim 38, wherein the first conductive layer is formed on a surface of the first substrate.
40. The method of claim 38, wherein the first conductive member is a through-wafer interconnect structure.
41. The method of claim 38, wherein the patterned conductive layer is formed on a surface of the standoff structure.
42. The method of claim 38, further comprising forming a third conductive layer on a second substrate, the third conductive layer being conductively coupled to the second conductive layer and the electrically powered device.
43. A method, comprising:
providing a first substrate comprising a first conductive layer and an array of photosensitive elements;
forming a first conductive member that extends through the first substrate and is conductively coupled to the first conductive layer;
forming a standoff structure above the first substrate;
forming a patterned conductive layer above the standoff structure, the patterned conductive layer being conductively coupled to the first conductive layer;
positioning a second substrate above the standoff structure, the second substrate having a second conductive member extending therethrough; and
conductively coupling the second conductive member to the patterned conductive layer positioned above the standoff structure.
44. The method of claim 43, further comprising conductively coupling an electrically powered device to the second conductive member.
45. The method of claim 43, wherein the first conductive layer is formed on a surface of the first substrate.
46. The method of claim 43, wherein the first conductive member is a through-wafer interconnect structure.
47. The method of claim 43, wherein the second conductive member is a through-wafer interconnect structure.
48. The method of claim 43, wherein the second conductive layer is formed on a surface of the standoff structure.
49. The method of claim 43, further comprising forming a third conductive layer above the second substrate, wherein the third conductive layer conductively couples the second conductive member to an electrically powered device.
50. A method, comprising:
providing a first substrate comprising an array of photosensitive elements and a standoff structure positioned above a surface of the first substrate;
forming an electrically conductive structure, a first portion of which extends under the standoff structure;
positioning an electrically powered device above the first substrate; and
conductively coupling the electrically conductive structure to the electrically powered device.
51. The method of claim 50, wherein the electrically conductive structure also comprises a second portion that is positioned under the standoff structure and extends through the first substrate.
52. The method of claim 51, wherein the second portion is a through-wafer interconnect structure.
53. The method of claim 50, further comprising supplying electrical power to the electrically powered device through the electrically conductive structure.