1. An apparatus for placing balls having conductivity in a predetermined pattern onto one surface of a base unit, comprising:
an arrangement member, having one surface, another surface opposite to the one surface and positioning openings, wherein the positioning openings are arranged corresponding to a pattern such that the openings are through from the one surface to the another surface of the arrangement member so that the balls are inserted therein; and
a transfer device, having two or more flexible line members in which core axes thereof are substantially aligned, wherein each of the line members comprises a first end and a second end that are held by a pair of holding members, and an abdomen, which is a portion of each of the line members in between the first end and the second end, wherein
at least when the balls are placed,
the arrangement member is positioned in a manner that the another surface of the arrangement member is opposite to the one surface of the base unit, and
the line members of the transfer device are arranged in a substantially horizontal manner for only the abdomens of the line members of the transfer device to contact with the one surface of the arrangement member and the balls supplied to the one surface of the arrangement member, and the transfer device is moved horizontally with respect to the one surface of the arrangement member.
2. The apparatus of claim 1, wherein the core axes of the line members are intersected with a moving direction of the transfer device at an angle of 45 to 135 degrees.
3. The apparatus of claim 1, wherein the line members have an elastic property, and the line members are positioned in a manner to be pressed to the one surface of the arrangement member.
4. The apparatus of claim 1 comprising a magnetism generator arranged with respect to the base unit, and wherein at least portions of the line members relative to the magnetism generator are soft magnetic.
5. The apparatus of claim 4, wherein the magnetism generating unit has a plurality of magnetic areas, the adjacent magnetic areas are arranged with different polarities, and at least portions of the line members relative to the magnetism generator are soft magnetic.
6. The apparatus of claim 4, wherein the magnetism generating unit has a plurality of magnetic areas, adjacent magnetic areas are arranged with different polarities, the magnetic areas are arranged in one row, and at least portions of the line members relative to the magnetism generator are soft magnetic.
7. The apparatus of claim 1, wherein for the arrangement member, when the another surface of the arrangement member is positioned to be opposite to the one surface of the base unit, a distance t from the one surface of the base unit to the one surface of the arrangement member with respect to a diameter d of the ball has a thickness of 0.8\u2266td\u22661.4, and the positioning opening has a first taper hole getting wider from the one surface to the another surface, a crest line at the one surface side of the first taper hole is higher than the one surface side from a center of the ball placed on the one surface of the base unit.
8. The apparatus of claim 7, wherein the first taper hole is a substantially frustum shape.
9. The apparatus of claim 7, wherein the positioning opening has a second taper hole coaxial with the first taper hole, and is formed at the one surface side of the arrangement member, and is getting wider along a direction from the another surface to the one surface.
10. The apparatus of claim 7, wherein the positioning opening has a second taper hole coaxial with the first taper hole, and is formed at the one surface side of the arrangement member, and is getting wider along a direction from the another surface to the one surface, and the first and the second taper holes are substantially a frustum shape.
11. The apparatus of claim 1, comprising a drawing unit for drawing the arrangement member, wherein the drawing unit is arranged having the base unit in between the drawing unit and the arrangement member for the another surface of the arrangement member be positioned to the one surface of the base unit.
12. The apparatus of claim 11, wherein the drawing unit is a magnetism generator, and the arrangement member comprises a soft magnetic portion.
13. The apparatus of claim 11, wherein the drawing unit is a magnetism generator.
14. The apparatus of claim 1, comprising: the base unit having a low-adhesive temporal fixing film formed on the one surface; and a temporal fixing film deteriorating unit for increasing an adhesive strength of the temporal fixing film.
15. The apparatus of claim 1, comprising: a temporal fixing film forming unit for forming a low-adhesive temporal fixing film on the one surface of the base unit; arid a temporal fixing film deteriorating unit for increasing an adhesive strength of the temporal fixing film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor structure of a high side driver, comprising:
an ion-doped junction, comprising:
a substrate;
a deep well, formed in the substrate, wherein the deep well has a first concave structure;
a semiconductor region, located on an upper surface of the substrate and connected to the first concave structure of the deep well, wherein the semiconductor region has substantially the same ion-doping concentration as the substrate; and
a second well, surrounding the semiconductor region and the deep well, wherein the second well has a complementary ion-doped type to the deep well; and
a conductive capacitor structure, formed above the deep well and covering the deep well.
2. The semiconductor structure according to claim 1, further comprising an oxide layer, formed on the ion-doped junction, wherein the conductive capacitor structure is formed on the oxide layer.
3. The semiconductor structure according to claim 2, wherein the ion-doped junction further comprises a heavy ion-doped region having the same ion-doped type with the deep well, and the heavy ion-doped region is connected to a highest potential node of the conductive capacitor structure.
4. The semiconductor structure according to claim 2, wherein the depth of the deep well is from 2 um to 10 um.
5. The semiconductor structure according to claim 2, further comprising a first dielectric layer formed between the conductive capacitor structure and the oxide layer.
6. The semiconductor structure according to claim 5, wherein the conductive capacitor structure comprising:
a first metal layer, formed on the first dielectric layer, wherein the first metal layer has a second concave structure corresponding to the first concave structure;
a second dielectric layer, formed on the first metal layer; and
a plurality of separated second metal layers, formed on the second dielectric layer, wherein one of the second metal layers is connected to a high voltage, another one of the second metal layers is connected to a low voltage and each of the second metal layers has a third concave structure corresponding to the second concave structure.
7. The semiconductor structure according to claim 1, wherein the first concave structure is an L-shaped corner structure.
8. The semiconductor structure according to claim 1, wherein the substrate is a P-substrate and the deep well is a deep N well.
9. The semiconductor structure according to claim 1, wherein the doping concentration of the deep well is from 1.7E17 cm-3 to 8.3E18 cm-3.
10. A semiconductor structure of a high side driver, comprising:
an ion-doped junction, comprising:
a substrate;
a deep well, formed in the substrate, wherein the deep well has a concave corner indented toward a central part of the deep well;
a semiconductor region, located on an upper surface of the substrate and connected to the concave corner of the deep well, wherein the semiconductor region has substantially the same ion-doping concentration as the substrate; and
a second well, surrounding the semiconductor region and the deep well, wherein the second well has a complementary ion-doped type to the deep well.