1. A polishing pad useful for polishing a surface of a semiconductor substrate, the polishing pad comprising:
(a) a polishing layer that includes:
(i) a central region;
(ii) an outer peripheral edge spaced from the central region; and
(iii) a generally annular polishing region configured to polish the surface of a workpiece and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;
(b) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central portion and a second end located within the polishing region; and
(c) a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located in at least one of:
(i) the outer peripheral edge; and
(ii) radially outward from the outer periphery of the polishing region.
2. The polishing pad according to claim 1, wherein the second end of each groove in the first plurality of grooves is located proximate the outer periphery of the polishing region and the first end of each groove in the second plurality of grooves is located proximate the inner periphery of the polishing region.
3. The polishing pad according to claim 1, wherein ones of the first plurality of grooves are located alternatingly with ones of the second plurality of grooves.
4. The polishing pad according to claim 1, further comprising a third plurality of grooves in the polishing layer, each groove of the third plurality of grooves located entirely within the polishing region.
5. The polishing pad according to claim 1, further including a plurality of sets of branching grooves in the polishing layer, each groove in each set located entirely within the polishing region and having an end in fluid communication with a corresponding respective groove of the first plurality of grooves.
6. A method of chemical mechanical polishing a semiconductor substrate, comprising the steps of:
(a) providing a polishing pad comprising:
(i) a polishing layer that includes:
(A) a central region;
(B) an outer peripheral edge spaced from the central region; and
(C) a generally annular polishing region configured to polish the surface of the semiconductor substrate and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;
(ii) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central portion and a second end located within the polishing region; and
(iii)a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located in at least one of the outer peripheral edge and located radially outward from the outer periphery of the polishing region; and
(b) providing a polishing solution to the central portion of the polishing pad.
7. The method according to claim 6, further including the step of rotating the polishing pad while the semiconductor substrate is in contact with the polishing layer such that at least a portion of the polishing solution moves from ones of the first plurality of grooves to ones of the second plurality of grooves.
8. The method according to claim 6, further including the step of rotating the polishing pad while the semiconductor substrate is in contact with the polishing layer such that at least a portion of the polishing solution moves from ones of the first plurality of grooves to corresponding immediately adjacent ones of the second plurality of grooves.
9. The method according to claim 6, further including the step of rotating the polishing pad while the semiconductor substrate is in contact with the polishing layer such that at least a portion of the polishing solution moves from ones of the first plurality of grooves to ones of a third plurality of grooves and from the third plurality of grooves to ones of the second plurality of grooves.
10. A polishing system for use with a polishing solution to polish a surface of a semiconductor substrate, comprising:
(a) a polishing pad comprising:
(i) a polishing layer that includes:
(A) a central region;
(B) an outer peripheral edge spaced from the central region; and
(C) a generally annular polishing region configured to polish the surface of the semiconductor substrate and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;
(ii) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central portion and a second end located within the polishing region; and
(iii)a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located in at least one of the outer peripheral edge and located radially outward from the outer periphery of the polishing region; and
(b) a polishing solution delivery system for delivering the polishing solution to the central portion of the polishing pad.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A pharmaceutical composition comprising:
(a) about 3 to 20% by weight of a dipeptidyl peptidase-4 (DPP-4) inhibitor or a pharmaceutically acceptable salt thereof;
(b) about 25 to 94% by weight of metformin hydrochloride;
(c) about 0.1 to 10% by weight of a lubricant; and
(d) about 0 to 35% by weight of a binding agent.
2. The pharmaceutical composition of claim 1 additionally comprising one or more excipients selected from the group consisting of (a) diluent; (b) a disintegrant; (c) a surfactant; (d) a wetting agent; and (e) an anti-oxidant.
3. The pharmaceutical composition of claim 1 comprising:
(a) about 5 to 18% by weight of a DPP-4 inhibitor or a pharmaceutically acceptable salt thereof;
(b) about 65 to 77% by weight of metformin hydrochloride;
(c) about 1 to 2% by weight of a lubricant; and
(d) about 4 to 9% by weight of a binding agent.
4. The pharmaceutical composition of claim 3 additionally comprising about 0.5 to 1% by weight of a surfactant andor about 5 to 15% by weight of a diluent.
5. The pharmaceutical composition of claim 3 wherein said lubricant is magnesium stearate or sodium stearyl fumarate, and the binding agent is polyvinylpyrrolidone.
6. The pharmaceutical composition of claim 3 comprising:
(a) about 9% by weight of a DPP-4 inhibitor or a pharmaceutically acceptable salt thereof;
(b) about 73% by weight of metformin hydrochloride;
(c) about 1 to 2% by weight of a lubricant; and
(d) about 7% by weight of a binding agent.
7. The pharmaceutical composition of claim 6 additionally comprising about 0.5% by weight of a surfactant andor about 10% by weight of a diluent.
8. The pharmaceutical composition of claim 3 comprising
(a) about 5% by weight of a DPP-4 inhibitor or a pharmaceutically acceptable salt thereof;
(b) about 77% by weight of metformin hydrochloride;
(c) about 1 to 2% by weight of a lubricant; and
(d) about 7% by weight of a binding agent.
9. The pharmaceutical composition of claim 8 additionally comprising about 0.5% by weight of a surfactant andor about 10% by weight of a diluent.
10. The pharmaceutical composition of claim 3 wherein said DPP-4 inhibitor is selected from the group consisting of sitagliptin, vildagliptin, and saxagliptin, and pharmaceutically acceptable salts of each thereof.
11. The pharmaceutical composition of claim 10 wherein said DPP-4 inhibitor is sitagliptin or the dihydrogenphosphate salt thereof.
12. A pharmaceutical composition comprising:
(a) a DPP-4 inhibitor present in a unit dosage strength of 25 to 200 milligrams;
(b) metformin hydrochloride present in a unit dosage strength of 250, 500, 625, 750, 850, or 1000 milligrams;
(c) about 1 to 2% by weight of a lubricant;
(d) about 7% by weight of a binding agent; and optionally
(e) about 10% by weight of a diluent; and optionally
(f) about 0.5% by weight of a surfactant.
13. The pharmaceutical composition of claim 12 wherein said DPP-4 inhibitor is sitagliptin, said lubricant is sodium stearyl fumarate, said binding agent is polyvinylpyrrolidone, said optional diluent is microcrystalline cellulose, and said optional surfactant is sodium lauryl sulfate.
14. The pharmaceutical composition of claim 12 wherein said DPP-4 inhibitor is present in a unit dosage strength of 25, 50, 75, 100, 150, or 200 milligrams, and said metformin hydrochloride is present in a unit dosage strength of 500, 850, or 1000 milligrams.
15. The pharmaceutical composition of claim 14 wherein said DPP-4 inhibitor is present in a unit dosage strength of 50 milligrams, and said metformin hydrochloride is present in a unit dosage strength of 500, 850, or 1000 milligrams.
16. The pharmaceutical composition of claim 15 wherein said DPP-4 inhibitor is sitagliptin.
17. The pharmaceutical composition of claim 16 wherein said sitagliptin is present in a unit dosage strength of 50 milligrams, and said metformin hydrochloride is present in a unit dosage strength of 500 or 1000 milligrams.
18. The pharmaceutical composition of claim 1 or 14 wherein said composition is in the dosage form of a tablet.
19. A method of treating Type 2 diabetes in a human in need thereof comprising orally administering to said human a pharmaceutical composition of claim 1 or 14.
20. The pharmaceutical composition of claim 1 further comprising one or more agents selected from the group consisting of flavoring agents, colorants, and sweeteners.
21. The pharmaceutical composition of claim 1 or 3 prepared by wet granulation methods.
22. The pharmaceutical composition of claim 12 wherein said DPP-4 inhibitor is vildagliptin or saxagliptin or a pharmaceutically acceptable salt of each thereof.