1. A heater, comprising:
at least two leads; and
a heating element which is formed between said at least two leads, a material of said heating element being different from a material of said at least two leads such that a location of a hot spot in said heater is controllable based on a polarity of current in said heater,
wherein said material of said heating element comprises a Seebeck coefficient which is different than a Seebeck coefficient of said material of said at least two leads.
2. The heater of claim 1, wherein said material of said heating element and said material of said at least two leads comprise a doped semiconductor, a dopant concentration in said material of said heating element being different than a dopant concentration in said material of said at least two leads.
3. The heater of claim 2, wherein said dopant concentration of said material of said at least two leads is greater than a dopant concentration of said material of said heating element.
4. The heater of claim 2, wherein said doped semiconductor comprises a doped silicon membrane having a thickness of about 0.5 microns.
5. The heater of claim 1, wherein where said polarity comprises a first polarity, said hot spot is formed at an interface between said heating element and one of said at least two leads, and where said polarity comprises a second polarity different from said first polarity, said hot spot is formed at an interface between said heating element and another one of said at least two leads.
6. The heater of claim 1, wherein a location of said hot spot is moved from an interface between said heating element and one of said at least two leads, to another interface between said heating element and another one of said leads by changing said polarity of said current in said heater.
7. The heater of claim 1, wherein said at least two leads are connected to a current source which generates a first current and a second current having a polarity which is reversed from said first current.
8. The heater of claim 1, wherein a length of said heating element is about 3.5 microns, and a width of said heating element is about 2 microns.
9. The heater of claim 1, wherein said at least two leads comprises a doped silicon membrane with a dopant concentration of about 1020 cm\u22123, and said heating element comprises a doped silicon membrane with a dopant concentration of about 1017 cm\u22123.
10. A method of fabricating a heater, said method comprising:
forming at least two leads; and
forming a heating element between said at least two leads, a material of said heating element being different from a material of said at least two leads such that a location of a hot spot in said heater is controllable based on a polarity of current in said heater,
wherein said material of said heating element comprises a Seebeck coefficient which is different than a Seebeck coefficient of said material of said at least two leads.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A transport system for transporting large items, wherein the large items comprise at least three through going holes and said system comprises a frame to support the items, wherein said frame has a substantially rectangular shape and comprises two parallel longitudinal beams connected by two parallel transverse beams and further comprises at least two transverse support bars located between the two parallel transverse beams to support the items, wherein the transport system further comprises a first and a second rod to be mounted in two through going holes in the items, wherein each end of the first and second rods can be connected to the longitudinal beams or the transverse beams to secure the items to the frame such that no parts of the large items extends over the rectangle defined by the two parallel longitudinal beams and the two parallel transverse beams.
2. The transport system according to claim 1, wherein the large items are flanges.
3. The transport system according to claim 1, wherein the first and second rods are connected with the longitudinal beams by chains, wires or ropes.
4. The transport system according to claim 1, wherein a third rod is mounted in the third through going hole of the items.
5. The transport system according to claim 1, wherein the items comprise further through going holes.
6. The transport system according to claim 5, wherein one or more of the further through going holes are mounted with a rod.
7. The transport system according to claim 1, wherein the length of the longitudinal beams is in the range of about 3 m to about 9 m.
8. The transport system according to claim 7, wherein the length of the transverse beams is between 1.34 m to 2.44 m.
9. The transport system according to claim 1, wherein the large items have a largest extension in the range of about 3 m to about 8 m.
10. The transport system according to claim 4, wherein the third through going hole and the third rod are used to attach the large items to a further support.