1. A method of performing a gastroplasty without resection comprising:
passing a bougie into a stomach of a patient, said bougie including a body and an upward extension capable of splaying away from said body to form a Y shape;
splaying said extension;
establishing a line along an outer side of said extension, beginning at a bottom of the stomach and ending at a point that is spaced below and away from a gastroesophageal junction due to said splaying of said extension;
joining opposing walls of the stomach along said line;
closing said extension against said body;
removing said bougie.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a liquid crystal display panel, comprising:
forming a gate electrode on a substrate;
forming a gate insulating film on the gate electrode formed thereon;
forming an amorphous silicon film on the gate insulating film;
forming an insulating pattern on the amorphous silicon film;
crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal, the polycrystalline silicon film having source, drain and channel areas, wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film; and
forming source and drain electrodes on the polycrystalline silicon film, wherein the source and the drain electrodes contacting the source and drain areas of the polycrystalline silicon film, respectively;
wherein crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal further includes:
forming the derivative metal on the insulating pattern and the amorphous silicon film;
injecting an impurity ion into the amorphous silicon film having the derivative metal formed thereon; and
applying a heat and an electric field to the amorphous silicon film, wherein the impurity ion injected into the amorphous silicon film is activated during the application of the heat; and
wherein forming source and drain electrodes on the polycrystalline silicon film further includes:
forming sequentially a data metal layer and the photo-resist on the polycrystalline film;
forming a stepped photo-resist pattern with a mask having a partially exposing part:
etching the data metal layer and the polycrystalline silicon film using the stepped photo-resist pattern;
ashing the stepped photo-resist pattern; and
etching the data metal layer using the ashed photo-resist pattern, thereby exposing the insulating pattern overlapping the channel area of the polycrystalline silicon film.
2. The fabricating method of the liquid crystal display panel according to claim 1, wherein the derivative metal includes nickel (Ni).
3. The fabricating method of the liquid crystal display panel according to claim 1, wherein forming an insulating pattern on the amorphous silicon film further includes:
forming sequentially an insulating material and an photo-resist on the amorphous silicon film;
irradiating light from the backside of the substrate toward the photo-resist;
developing the photo-resist to form a photo-resist pattern; and etching the insulating material using the photo-resist pattern as a mask.
4. A method of fabricating a liquid crystal display panel, comprising:
forming a gate electrode on a substrate;
forming a gate insulating layer on the gate electrode;
depositing an amorphous silicon film on the gate insulating layer;
forming an insulating pattern on the amorphous silicon film;
forming a derivative metal on the insulating pattern and the amorphous silicon film;
crystallizing the amorphous silicon film into a polycrystalline silicon film, the polycrystalline silicon film having source, drain and channel areas; and
forming source and drain electrodes on the polycrystalline silicon film;
wherein crystallizing the amorphous silicon film into a polycrystalline silicon film using a derivative metal further includes:
forming the derivative metal on the insulating pattern and the amorphous silicon film;
injecting an impurity ion into the amorphous silicon film having the derivative metal formed thereon; and
applying a heat and an electric field to the amorphous silicon film, wherein the impurity ion injected into the amorphous silicon film is activated during the application of the heat; and
wherein forming source and drain electrodes on the polycrystalline silicon film further includes:
forming sequentially a data metal layer and the photo-resist on the polycrystalline film;
forming a stepped photo-resist pattern with a mask having a partially exposing part;
etching the data metal layer and the polycrystalline silicon film using the stepped photo-resist pattern;
ashing the stepped photo-resist pattern; and
etching the data metal layer using the ashed photo-resist pattern, thereby exposing the insulating pattern overlapping the channel area of the polycrystalline silicon film.
5. The fabricating method of the liquid crystal display panel according to claim 4, wherein the insulating pattern is formed by a backside exposure using the gate electrode as a mask.
6. The fabricating method of the liquid crystal display panel according to claim 4, wherein the insulating pattern overlaps the channel area of the polycrystalline silicon film.
7. The fabricating method of the liquid crystal display panel according to claim 4, wherein the source and drain electrodes are formed using a mask having a diffractive exposing part.
8. The fabricating method of the liquid crystal display panel according to claim 5, wherein the liquid crystal display panel is formed with four masks.
9. The fabricating method of the liquid crystal display panel according to claim 4, further includes forming a passivation layer having a contact hole on the source and drain electrodes and forming a transparent electrode on the passivation layer.