1. Dialysis machine comprising tubes (1, 5, 8) connected with a dialyzer (6), an apparatus (4) for delivering pharmaceuticals into the tubes (1, 5, 8), and a pump (11) for the transport of blood through the tubes (1, 5, 8) and the dialyzer (6), wherein
the apparatus (4) is configured to administer at least one pharmaceutical by a pressure effect of the pump (11) and comprises
a main line (20) on an outlet side of the pump (11) and configured to be coupled to a first connector (25) at an inlet end thereof and a second connector (26) at an outlet end thereof,
a first section of a bypass line (21, 21a, 21b, 21c) branching off the mainline (20) downstream of the inlet end of the main line (20) and configured for connecting the main line (20) with a container (22) containing a pharmaceutical at an outlet end of the first bypass section (21a, 21b, 21c), and
a second section (23a, 23b, 23c) of the bypass line branching off the main line (20) directly downstream of the first bypass section (21, 21a, 21b, 21c) and upstream of the outlet end of the main line (20), and configured for connecting the container (22) containing a pharmaceutical at an inlet end of the second bypass section (23a, 23b, 23c) with the main line (20).
2. Dialysis machine according to claim 1, comprising a small cross section of an inlet path into one of tubes for the at least one pharmaceutical so that at least five minutes, preferably at least ten minutes are necessary to administer the total volume of the at least one pharmaceutical.
3. Dialysis machine according to claim 1, wherein the at least one pharmaceutical is EPO, an iron preparation andor the active form of vitamin D.
4. Dialysis machine according to claim 1, all containers (22, 50) containing pharmaceuticals for carrying out a dialysis are connected with the dialysis machine at the same time.
5. Dialysis machine according to claim 1, a control device for controlling the activation of the delivery of the at least one pharmaceutical.
6. Dialysis machine according to claim 1, comprising at least one membrane valve (30, 31, 32a, 33a) to control the delivery of a pharmaceutical.
7. Dialysis machine according to claim 6, comprising at least two membrane valves and only one membrane (31) stretching across the housing (30) or housings of the at least two membrane valves.
8. Dialysis machine according to claim 1, comprising a membrane valve to control the delivery of a pharmaceutical, wherein the membrane valve comprises a housing (30), a membrane (31), a movable bolt (32a, 32b, 32c) and an electric, pneumatic, hydraulic or magnetic device for the movement of the bolt (32a, 32b, 32c).
9. Dialysis machine according to claim 1, comprising
a collapsible container (70) free of gas connected with a tube (1) on an inlet side (1a) of the pump (11), wherein the container (70) contains a pharmaceutical, or
a non-flexible and non-collapsible container (50) connected with a tube (1) on the inlet side (1a) of the pump, wherein the container (50) contains a pharmaceutical and a gas.
10. Dialysis machine according to claim 9, wherein the non-flexible and non-collapsible container is a syringe or a vial (50) with a pierceable rubber stopper (52).
11. Dialysis machine according to claim 10, comprising a connection between the piston of the syringe and a container (60) containing a gas.
12. Dialysis machine according to claim 1, wherein cross sections which determine the flow rate of the pharmaceutical during the administration are so designed such that the administration lasts for at least five minutes, preferably for at least ten minutes.
13. Dialysis machine according to claim 1, wherein the cross sections which determine the flow rate of the pharmaceutical during the administration are designed such that the administration lasts for up to thirty minutes, preferably for up to twenty minutes.
14. Dialysis machine according to claim 1, wherein the apparatus for administering the at least one pharmaceutical comprises a manifold (4) comprising the mainline (20) and the bypass line (21, 21a, 21b, 21c, 23a, 23b, 23c) for providing the flow from the main line (20) through the pharmaceutical container (22) connectable with the bypass line (21, 21a, 21b, 21c, 23a, 23b, 23c), wherein the main line (20) is detachably connected with the dialyzer (6) at one end and with a tube (1, 5) at the other end.
15. Method for a dialysis comprising the step of administration of a pharmaceutical by a dialysis machine according to claim 1 by a pressure effect of the pump.
16. Method according to claim 15, wherein the administration of the pharmaceutical lasts at least five minutes, preferably at least ten minutes.
17. Method according to claim 15, wherein the pharmaceutical is an iron preparation.
18. Dialysis machine according to claim 1, wherein no other connections or dialysis elements are directly positioned in the main line (20) between branching off of the first (21, 21a, 21b, 21c) and second (23a, 23b, 23c) sections of the bypass line.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a barrier layer of a semiconductor device, comprising:
forming a region heavily doped with p-type impurities on a semiconductor substrate, the heavily doped region being formed employing BF2+ ions;
subjecting a surface of the semiconductor substrate to a first hydrogen plasma containing at least one inert gas while biasing the first hydrogen plasma with a RF bias power to direct the first hydrogen plasma to the surface of the semiconductor substrate, the surface of the semiconductor substrate including at least a portion of the heavily doped region;
evaporating the p-type impurities from the semiconductor substrate by maintaining the first hydrogen plasma at a temperature greater than about 600\xb0 C.; and
depositing a refractory metal layer on the surface of the semiconductor substrate.
2. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, wherein a single reaction chamber is employed to perform the step of subjecting the semiconductor substrate to the hydrogen plasma and the step of depositing the refractory metal layer.
3. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, wherein the refractory metal layer is deposited employing a chemical vapor deposition process or a plasma-enhanced chemical vapor deposition process.
4. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, wherein the refractory metal layer is deposited at a temperature of about 580\xb0 C. to about 700\xb0 C.
5. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, further comprising subjecting the refractory metal layer to a nitridation atmosphere to form a refractory metal nitride layer on a surface portion of the refractory metal layer.
6. The method of forming a barrier layer of a semiconductor device as claimed in claim 5, wherein the refractory metal nitride layer is formed by application of heat or plasma.
7. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, wherein a ratio of the at least one inert gas and hydrogen is about 9:1 to about 3:2.
8. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, wherein the surface of the semiconductor device is subjected to the hydrogen plasma containing the at least one inert gas for a period of time of about 5 seconds to about 5 minutes.
9. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, further comprising:
depositing an insulating layer over the semiconductor substrate;
forming a contact hole to expose the heavily doped region;
subjecting the semiconductor substrate to the first hydrogen plasma after forming the heavily doped region;
subjecting a surface of the refractory metal layer to a second hydrogen plasma containing at least one inert gas while biasing the second hydrogen plasma with the RF bias power to direct the second hydrogen plasma to the surface of the refractory metal layer to remove impurities; and
subjecting the refractory metal layer to a nitridation atmosphere to form a refractory metal nitride layer on a surface portion of the refractory metal layer.
10. The method of forming a barrier layer of a semiconductor device as claimed in claim 9, wherein subjecting the semiconductor substrate to the first hydrogen plasma, depositing the refractory metal layer, subjecting the surface of the refractory metal layer to the second hydrogen plasma and to the nitridation atmosphere are performed in a single reaction chamber.
11. The method of forming a barrier layer of a semiconductor device as claimed in claim 9, wherein subjecting the refractory metal layer to the nitridation atmosphere is performed before subjecting the refractory metal layer to the second hydrogen plasma.
12. The method of forming a barrier layer of a semiconductor device as claimed in claim 9, wherein the refractory metal layer is a titanium layer.
13. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, wherein:
depositing the refractory metal layer includes employing a chemical vapor deposition process; and
subjecting the refractory metal layer to a nitridation atmosphere to form a refractory metal nitride layer on a surface portion of the refractory metal layer.
14. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, wherein evaporating the p-type impurities includes partially evaporating impurities existing on the surface of the substrate.
15. The method of forming a barrier layer of a semiconductor device as claimed in claim 14, wherein partially evaporating the impurities includes simultaneously removing a native oxide layer formed on the substrate;
the method further comprising:
treating the refractory metal layer with a second hydrogen plasma to remove impurities in the refractory metal layer; and
treating the refractory metal layer in a nitridation atmosphere to form a refractory metal nitride layer on the refractory metal layer.
16. The method of forming a barrier layer of a semiconductor device as claimed in claim 1, wherein evaporating the p-type impurities from the semiconductor substrate includes reducing a surface concentration of boron andor fluoride ions thereon.
17. A method of forming a barrier layer of a semiconductor device, comprising:
forming a heavily doped region on a semiconductor substrate, the heavily doped region including p-type impurities;
depositing an insulating layer over the semiconductor substrate;
forming a contact hole through the insulating layer to expose the heavily doped region;
subjecting a surface of the semiconductor substrate to a first hydrogen plasma containing at least one inert gas while biasing the first hydrogen plasma with a RF bias power to direct the first hydrogen plasma to the surface of the semiconductor substrate, the surface of the semiconductor substrate including at least a portion of the heavily doped region;
evaporating the p-type impurities from the semiconductor substrate by maintaining the first hydrogen plasma at a temperature greater than about 600\xb0 C.;
depositing a refractory metal layer on the surface of the semiconductor substrate;
subjecting a surface of the refractory metal layer to a second hydrogen plasma containing at least one inert gas while biasing the second hydrogen plasma with the RF bias power to direct the second hydrogen plasma to the surface of the refractory metal layer to remove impurities;
subjecting the refractory metal layer to a nitridation atmosphere to form a first refractory metal nitride layer on a surface portion of the refractory metal layer; and
forming a second refractory metal nitride layer on the first refractory metal nitride layer employing a chemical vapor deposition process or a plasma enhanced chemical vapor deposition process.
18. The method of forming a barrier layer of a semiconductor device as claimed in claim 17, wherein the first refractory metal nitride layer is formed by application of heat or plasma.
19. The method of forming a barrier layer of a semiconductor device as claimed in claim 17, further comprising:
depositing a metal layer on the second refractory metal nitride layer while filling the contact hole; and thereafter
patterning the metal layer to form metal contacts over the heavily doped region.
20. A method of forming a barrier layer of a semiconductor device, comprising:
subjecting a surface of a semiconductor substrate to a hydrogen plasma containing at least one inert gas while biasing the hydrogen plasma with a RF bias power to direct the hydrogen plasma to the surface of the semiconductor substrate, the semiconductor substrate including dopant impurities;
evaporating the dopant impurities from the semiconductor substrate by maintaining the first hydrogen plasma at a temperature greater than about 600\xb0 C.;
depositing a refractory metal layer on the surface of the semiconductor substrate, the depositing of the refractory metal layer including employing a chemical vapor deposition process;
subjecting the refractory metal layer to a nitridation atmosphere to form a first refractory metal nitride layer on a surface portion of the refractory metal layer; and
forming a second refractory metal nitride layer on the first refractory metal nitride layer employing a chemical vapor deposition process or a plasma enhanced chemical vapor deposition process.
21. A method of forming a barrier layer of a semiconductor device, comprising:
forming a heavily doped region on a semiconductor substrate, the heavily doped region including p-type impurities;
reducing a surface concentration of the p-type impurities in the heavily doped region by subjecting a surface of the semiconductor substrate to a first hydrogen plasma containing at least one inert gas while biasing the first hydrogen plasma with an RF bias power to direct the first hydrogen plasma to the surface of the semiconductor substrate, the surface of the semiconductor substrate including at least a portion of the heavily doped region;
evaporating the p-type impurities from the semiconductor substrate by maintaining the first hydrogen plasma at a temperature greater than about 600\xb0 C.; and
depositing a refractory metal layer on the surface of the semiconductor substrate.
22. The method of forming a barrier layer of a semiconductor device as claimed in claim 21, further comprising:
depositing an insulating layer over the semiconductor substrate;
forming a contact hole to expose the heavily doped region;
subjecting the semiconductor substrate to the first hydrogen plasma after forming the heavily doped region;
subjecting a surface of the refractory metal layer to a second hydrogen plasma containing at least one inert gas while biasing the second hydrogen plasma with the RF bias power to direct the second hydrogen plasma to the surface of the refractory metal layer to remove impurities; and
subjecting the refractory metal layer to a nitridation atmosphere to form a refractory metal nitride layer on a surface portion of the refractory metal layer.