1. A single channel full duplex wireless communication system, comprising:
a processor;
a transmitter connected to the processor, the transmitter transmitting a transmission signal via a transmission path;
a receiver connected to the processor, the receiver receiving a received signal via a reception path, wherein the transmitter and the receiver utilize one channel, at the same time, to transmit and receive said transmission and received signals, wherein a portion of the transmission signal is leaked, said leakage causing self-interference in the received signal;
a secondary transmission path connected to the processor;
the processor estimating a first transfer function, wherein the input to the first transfer function is adjusted by the first transfer function so as to produce an output to reduce the self-interference in the received signal, and feeding the input of the secondary transmission path with the output from the first transfer function;
a combiner to combine the received signal with the output from the secondary transmission path, thereby removing at least a fraction of the self-interference; and
a transmission feedback path, the transmission feedback path output being modified by a second transfer function; and
a secondary transmission feedback path, the secondary transmission feedback path output being modified by a third transfer function, such that combining of the modified transmission feedback path output and the modified secondary transmission feedback path output with the reception path output reduces a remaining fraction of the self-interference.
2. The system of claim 1, wherein the transmitter and the receiver utilize one antenna to transmit and receive signals, the antenna being connected to both the transmitter and the receiver via a circulator-like device, wherein said circulator-like device isolates the transmission signal from the received signal through use of one of passive noise cancellation techniques, active noise cancellation techniques, or any combination thereof.
3. The system of claim 1, further comprising a first antenna and a second antenna, wherein the first antenna is a transmission antenna and the second antenna is a receiver antenna, the first antenna connected to the transmitter and the second antenna connected to the receiver.
4. The system of claim 1, comprising multiple transmission paths and multiple reception paths.
5. The method of claim 1, further comprising a first antenna and a second antenna, wherein the first antenna is a transmission antenna and the second antenna is a receiver antenna, the first antenna connected to the transmitter and the second antenna connected to the receiver.
6. A method of improving signal-to-interference ratio in a single channel full duplex wireless communication system, comprising:
transmitting, by a transmitter, a transmission signal via a transmission path;
receiving, by a receiver, a received signal via a reception path, the transmission path and the reception path utilizing one channel, at the same time, to transmit and receive the transmission and received signals, wherein a portion of the transmission signal is leaked, said leakage causing self-interference in the received signal;
estimating, by a processor, a first transfer function, wherein the input to the first transfer function is adjusted by the first transfer function so as to produce an output to remove at least a fraction of the self-interference in the received signal;
feeding, by the processor, the input of a secondary transmission path with the output from the first transfer function, the secondary transmission path being connected to the processor;
combining, by a combiner, the received signal with the output from the secondary transmission path, thereby removing at least a fraction of the self-interference; and
estimating, by the processor, a second transfer function;
modifying, by the processor, a transmission feedback path output signal with the second transfer function;
estimating, by the processor, a third transfer function;
modifying, by the processor, a secondary transmission feedback path output signal with the third transfer function; and
adding, by the processor, the modified transmission feedback path output and the modified secondary transmission feedback path output to the reception path output, thereby reducing the remaining fraction of the self-interference.
7. The method of claim 6, wherein the transmitter and the receiver utilize one antenna to transmit and receive signals, the antenna being connected to both the transmitter and the receiver via a circulator-like device, wherein said circulator-like device isolates the transmission signal from the received signal through use of one of passive noise cancellation techniques, active noise cancellation techniques, or any combination thereof.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
forming a thin metal-organic layer on a copper structure, wherein the thin metal-organic layer prevents corrosion of the copper structure, and wherein the thin metal-organic layer comprises an organo-copper compound comprising an alkyl group and a thiol group.
2. The method of claim 1 wherein the thin metal-organic layer substantially covers the copper structure.
3. The method of claim 1 wherein forming the thin metal-organic layer comprises cleaning the copper structure with a cleaning solution, wherein the cleaning solution comprises a corrosion inhibitor that reacts with the copper structure to form the thin metal-organic layer.
4. The method of claim 3 wherein the corrosion inhibitor comprises at least one of hexanethiol, heptanethiol, octanethiol, and dodecanethiol.
5. The method of claim 3 wherein the corrosion inhibitor comprises an organic molecule comprising a thiol group.
6. The method of claim 3 wherein the cleaning solution comprises a mixture of water and solvent with a high pH value to remove at least one of resist, SLAM and polymer material.
7. The method of claim 1 wherein forming the thin metal-organic layer prevents the formation of pinholes in the copper structure.
8. The method of claim 4 wherein the corrosion inhibitor comprises a concentration of less than 1 percent by weight of at least one of hexanethiol, heptanethiol, octanethiol, and dodecanethiol.
9. The method of claim 3 wherein the cleaning solution comprises at least one of an alkaline aqueous, solvent, or aqueous-solvent chemistry.
10. The method of claim 3 wherein the pH of the cleaning solution comprises above about 7.
11. The method of claim 3 wherein the copper etch rate of the corrosion inhibitor is about 1 nm per hour or less.
12. The method of claim 1 wherein the thin metal-organic layer comprises a thickness of about 2 nm or less.
13. A method comprising:
cleaning a microelectronic device surface with a cleaning solution, wherein the cleaning solution comprises a surfactant comprising a sulfonate functional group, and wherein a contact angle between the surfactant and the microelectronic device surface comprises about 40 degrees or below.
14. The method of claim 13 further comprising wherein the microelectronic device surface comprises a portion of a microelectronic device structure, wherein the aspect ratio of the microelectronic device structure is greater than about 3:1.
15. The method of claim 13 further comprising wherein an initial foaming of the surfactant is less than about 200 ml.
16. The method of claim 13 further comprising wherein the cleaning solution comprises a pH above about 7.
17. The method of claim 13 wherein the cleaning solution comprises a mixture of water and solvent to remove at least one of resist, SLAM and etch-polymer material.
18. The method of claim 13 further comprising wherein the microelectronic device surface comprises a hydrophobic CDO material.
19. The method of claim 13 further comprising wherein the surfactant comprises an anionic organic material comprising at least one of an alkanol polyethoxylate chain and an alkanol aromatic ring, alkano polyethylene oxide sulfopropyl ether and alkyl benzene sulfonate
20. The method of claim 19 further comprising at least one of potassium salt and glycol.
21. A cleaning solution comprising:
a mixture of water and solvent;
a corrosion inhibitor, wherein the corrosion inhibitor comprises an organic molecule comprising a thiol group; and
a surfactant, wherein the surfactant comprises an anionic organic material.
22. The cleaning solution of claim 21 wherein the cleaning solution is capable of removing at least one of resist, SLAM and polymer material.
23. The cleaning solution of claim 21 wherein the surfactant comprises a concentration of about 0.1 to about 1.0 percent by weight.
24. The cleaning solution of claim 21 wherein the pH of the cleaning solution comprises above about 7.
25. The cleaning solution of claim 21 wherein the corrosion inhibitor comprises a concentration of less than 1 percent by weight of at least one of hexanethiol, heptanethiol, octanethiol, and dodecanethiol.
26. The cleaning solution of claim 21 wherein the copper etch rate of the corrosion inhibitor is about 0.2 nm per hour or less.
27. The cleaning solution of claim 21 wherein the surfactant comprises at least one of an alkanol polyethoxylate chain and an alkanol aromatic ring, alkano polyethylene oxide sulfopropyl ether and alkyl benzene sulfonate, a potassium salt and glycol.