1. A backlight module, comprising:
a light guide panel, comprising:
a light output surface having at least one first side, at least one second side, at least one first through hole, at least one first recess and plural microstructure rows, wherein the microstructure rows are spaced to be arranged on the light output surface, the extending direction of each microstructure row is parallel to the extending direction of the first side, the first through hole is installed between any two adjacent microstructure rows, and the first recess is installed in a central zone of the light output surface; and
a first light emitting element disposed in the first recess, and arranged to emit lights towards the second side,
wherein a major light emitting axis of the first light emitting element deviates from the first through hole.
2. The backlight module according to claim 1, wherein the first recess and the first through hole are installed between the two same microstructure rows, and an included angle is defined by the major light emitting axis of the first light emitting element and a reference axis parallel to the first side.
3. The backlight module according to claim 2, wherein the light output surface of the light guide panel further comprises:
a second recess installed in the central zone; and
the backlight module further comprises:
a second light emitting element disposed in the second recess, and the light emitting direction thereof is opposite to the light emitting direction of the first light emitting element.
4. The backlight module according to claim 3, wherein a major light emitting axis of the second light emitting element is not parallel to the extending direction of the first side, and an included angle is defined by the major light emitting axis of the second light emitting element and a reference axis parallel to the first side.
5. The backlight module according to claim 4, wherein the light output surface of the light guide panel further comprises:
a second through hole installed between the two same microstructure rows as the second recess being installed,
wherein the major light emitting axis of the second light emitting element deviates from the second through hole.
6. The backlight module according to claim 4, wherein the included angle is at least 3 DEG.
7. The backlight module according to claim 4, wherein the second recess and the first recess are installed between the two same microstructure rows.
8. The backlight module according to claim 4, wherein the second recess and the first recess are not installed between the two same microstructure rows.
9. The backlight module according to claim 3, wherein the light output surface of the light guide panel further comprises:
a third recess installed in the central zone; and
the backlight module further comprises:
a third light emitting element disposed in the third recess, and arranged to emit lights towards the first side,
wherein a major light emitting axis of the third light emitting element passes through a section between the first light emitting element and the second light emitting element.
10. The backlight module according to claim 9, wherein each of the microstructure rows is provided with a plurality of microstructure patterns which are spaced to arrange with each other, the third recess is installed in one of the microstructure patterns.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method, comprising:
providing a semiconductor wafer having a plurality of die areas;
measuring a characteristic of a test structure in each individual die area; and
for each individual die area:
(1) adjusting a parameter of a laser based on the measured characteristic of the test structure in that die area; and
(2) annealing that die area with the laser adjusted based on the measured characteristic of the test structure in that die area.
2. The method of claim 1, wherein the measuring is performed at a plurality of locations within each individual die area.
3. The method of claim 1, wherein the measuring is one of a sheet resistance measurement, a thermal wave measurement, or a Photo Luminescence Imaging (PLI) measurement of the semiconductor wafer.
4. The method of claim 1, wherein the step of measuring a characteristic of a test structure includes storing a result of the measuring in a computer readable storage medium.
5. The method of claim 1, wherein the parameter is an intensity of the laser.
6. The method of claim 1, wherein the parameter is a wavelength of the laser.
7. The method of claim 1, wherein the parameter is a duration of the laser scan.
8. A system, comprising:
a laser light source;
a pedestal configured to hold a semiconductor wafer, wherein one of the laser light source and the pedestal is configured to move in relation to the other of the laser light source and the pedestal; and
a processor in signal communication with the laser light source and the pedestal, the processor configured to:
control the relative movement between the pedestal and the laser light source; and
adjust a parameter of the laser light source individually for scanning each of a plurality of die areas based on a map of the semiconductor wafer, the map characterizing the individual die areas of the semiconductor wafer based on a respective value of a first measurement taken in each respective die area.
9. The system of claim 8, wherein the first measurement is a sheet resistance measurement.
10. The system of claim 9, wherein the first measurement is a thermal wafer measurement.
11. The system of claim 9, wherein the parameter of the laser light source is an intensity of the laser light.
12. The system of claim 9, wherein the parameter of the laser light source is a wavelength of the laser light.
13. A machine readable storage medium encoded with program code, wherein when the program code is executed by a processor, the processor performs a method, the method comprising:
receiving a measurement of a characteristic of a test structure in each of a plurality of individual die areas of a semiconductor wafer; and
for each individual die area:
(1) adjusting a parameter of a laser based on the measured characteristic of the test structure in that die area; and
(2) controlling the laser to anneal that die area with the laser adjusted based on the measured characteristic of the test structure in that die area.
14. The machine readable storage medium of claim 13, wherein the measuring is performed at a plurality of locations within each individual die area.
15. The machine readable storage medium of claim 13, wherein the measuring includes taking a sheet resistance measurement of the semiconductor wafer.
16. The machine readable storage medium of claim 13, wherein the measurement includes taking a thermal wave measurement.
17. The machine readable storage medium of claim 13, wherein the measuring is taking a Photo Luminescence Image of the semiconductor wafer.
18. The machine readable storage medium of claim 13, wherein the parameter is an intensity of the laser.
19. The machine readable storage medium of claim 13, wherein the parameter is a, wavelength of the laser.
20. The machine readable storage medium of claim 13, wherein the parameter is a duration of the laser scan.