1. A system for producing a copolymer of isoprene comprising: (a) an isoprene starting composition derived from renewable resources; and (b) a polymer produced from at least a portion of the isoprene starting material; wherein at least a portion of the isoprene starting composition undergoes polymerization with another non-isoprene molecule to produce a copolymer.
2. The system of claim 1, wherein the isoprene starting composition derived from renewable resources comprises greater than about 2 mg of isoprene and comprises greater than or about 99.94% isoprene by weight compared to the total weight of all C5 hydrocarbons in the composition.
3. The system of claim 1, wherein the isoprene starting composition derived from renewable resources comprises greater than about 2 mg of isoprene and comprises one or more compounds selected from the group consisting of ethanol, acetone, C5 prenyl alcohols, and isoprenoid compounds with 10 or more carbon atoms.
4. The system of claim 1, wherein the isoprene starting composition derived from renewable resources comprises greater than about 2 mg of isoprene and comprises one or more second compounds selected from the group consisting of ethanol, acetone, methanol, acetaldehyde, methacrolein, methyl vinyl ketone, 2-methyl-2-vinyloxirane, cis- and trans-3-methyl-1,3-pentadiene, a C5 prenyl alcohol, 2-heptanone, 6-methyl-5-hepten-2-one, 2,4,5-trimethylpyridine, 2,3,5-trimethylpyrazine, citronellal, acetaldehyde, methanethiol, methyl acetate, 1-propanol, diacetyl, 2-butanone, 2-methyl-3-buten-2-ol, ethyl acetate, 2-methyl-1-propanol, 3-methyl-1-butanal, 3-methyl-2-butanone, 1-butanol, 2-pentanone, 3-methyl-1-butanol, ethyl isobutyrate, 3-methyl-2-butenal, butyl acetate, 3-methylbutyl acetate, 3-methyl-3-buten-1-yl acetate, 3-methyl-2-buten-1-yl acetate, (E)-3,7-dimethyl-1,3,6-octatriene, (Z)-3,7-dimethyl-1,3,6-octatriene, and 2,3-cycloheptenolpyridine; wherein the amount of the second compound relative to the amount of the isoprene is greater than or about 0.01% (ww).
5. The system of claim 1, wherein the isoprene starting composition derived from renewable resources comprises greater than about 2 mg of isoprene and comprises less than or about 0.5 \u03bcgL per compound for any compound in the composition that inhibits the polymerization of isoprene.
6. The system of claim 1 wherein the polymer produced from the isoprene starting material is a polyisoprene polymer which is comprised of repeat units that are derived from isoprene monomer, wherein the polyisoprene polymer has \u03b413C value of greater than \u221222\u2030 or which is within the range of \u221230\u2030 to \u221228.5\u2030.
7. The system of claim 1 wherein the polymer produced from the isoprene starting material is a polymer which is comprised of repeat units that are derived from isoprene monomer and at least one additional monomer, wherein the polymer includes blocks of repeat units that are derived from isoprene, and wherein the blocks of repeat units that are derived from isoprene have a \u03b413C value of greater than \u221222\u2030 or which is within the range of \u221232\u2030 to \u221224\u2030.
8. The system of claim 1 wherein the polymer produced from the isoprene starting material is a polymer which is comprised of repeat units that are derived from isoprene monomer and at least one additional monomer, wherein the polymer includes blocks of repeat units that are derived from isoprene, and wherein the blocks of repeat units that are derived from isoprene have a \u03b413C value of greater than \u221222\u2030 or which is within the range of \u221234\u2030 to \u221224\u2030.
9. The system of claim 8 wherein the polymer is a copolymer selected from the group consisted of (i) copolymers of isoprene and 1,3-butadiene, (ii) copolymers of isoprene and styrene, (iii) copolymers of isoprene, 1,3-butadiene, and styrene, and (iv) copolymers of isoprene and \u03b1-methyl styrene.
10. The system of claim 1 wherein the polymer produced from the isoprene starting material is a polyisoprene polymer which is comprised of repeat units that are derived from isoprene monomer, wherein the polyisoprene polymer has fM value which is greater than 0.9.
11. The system of claim 1, further comprising one or more of: (i) a catalyst for polymerizing isoprene, (ii) a polymerization initiator, (iii) an ionic surfactant, (iv) a suitable organic solvent, and (v) a polymerization chain terminator.
12. A system for producing a polymer of isoprene comprising: (a) an isoprene starting composition derived from renewable resources; and (b) a polymer produced from at least a portion of the isoprene starting material; wherein at least a portion of the isoprene starting composition undergoes polymerization with other isoprene molecules to produce a polymer of isoprene with a molecular weight of about 5,000 to about 100,000.
13. A method for producing a copolymer of isoprene derived from renewable resources comprising: (a) culturing cells comprising a heterologous nucleic acid encoding an isoprene synthase polypeptide under suitable culture conditions for the production of the isoprene; (b) producing the isoprene; and (c) polymerizing the isoprene derived from renewable resources with another non-isoprene molecules to produce a copolymer.
14. The method of claim 13, further comprising recovering the isoprene from the isoprene-producing cell culture prior to polymerization.
15. The method of claim 13 further comprising step (d) recovering the polymer produced.
16. A method for producing a polymer of isoprene derived from renewable resources comprising: (a) culturing cells comprising a heterologous nucleic acid encoding an isoprene synthase polypeptide under suitable culture conditions for the production of the isoprene; (b) producing the isoprene; and (c) polymerizing the isoprene derived from renewable resources with other isoprene molecules to produce a polymer of isoprene with a molecular weight of about 5,000 to about 100,000.
17. A polymer of isoprene derived from renewable resources produced by the method according to claim 13.
18. A polymer of isoprene derived from renewable resources produced by the method according to claim 16.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a doped portion of a semiconductor, comprising:
providing a semiconductor substrate having a surface;
defining a plurality of protruding portions on the substrate surface, the protruding portions having a minimum height;
providing a sacrificial layer above the substrate surface;
providing a pattern layer above the sacrificial layer and the substrate surface;
removing portions of the pattern layer from predetermined substrate portions;
performing an ion implantation procedure such that an angle of the ions with respect to the substrate surface is less than 90\xb0, wherein the ions are stopped by the pattern layer and by the protruding portions, the predetermined substrate portions thereby being doped with the ions; and
removing the pattern layer.
2. The method of claim 1, wherein the pattern layer is conformally deposited on the substrate surface.
3. The method of claim 1, wherein removing the portions of the pattern layer comprises:
covering predetermined portions of the pattern layer with a resist material, thereby defining uncovered portions of the pattern layer, and
anisotropic etching the pattern layer at the uncovered portions.
4. The method of claim 3, wherein the covering of predetermined portions with the resist material comprises:
providing a photoresist layer, and
photolithographically patterning the photoresist layer.
5. The method of claim 1, wherein a thickness of the pattern layer is less than the minimum height of the protruding portions.
6. The method of claim 1, wherein the pattern layer has a thickness of between 5-10 nm.
7. The method of claim 1, wherein the pattern layer comprises a material selected from the group consisting of: silicon nitride, tungsten, and TiN.
8. The method of claim 1, wherein the sacrificial layer is conformally deposited on the substrate surface.
9. The method of claim 1, wherein the thickness of the sacrificial layer is less than the minimum height of the protruding portions.
10. The method of claim 1, wherein the sacrificial layer has a thickness of between 5-30 nm.
11. The method of claim 1, wherein the sacrificial layer comprises silicon dioxide.
12. The method of claim 1, further comprising removing portions of the sacrificial layer from the predetermined substrate portions prior to performing the ion implantation.
13. The method of claim 12, wherein the thickness of the sacrificial layer is larger than the minimum height of the protruding portions.
14. The method of claim 13, further comprising removing an upper portion of the sacrificial layer.
15. The method of claim 14, wherein, after removing the upper portion of the sacrificial layer, a plane surface of the sacrificial layer is thereby obtained.
16. The method of claim 13, wherein the pattern layer includes a photoactive compound and predetermined portions of the pattern layer are removed by exposing the predetermined portions to electromagnetic radiation and dissolving the exposed portions in a suitable solvent.
17. The method of claim 12, wherein the sacrificial layer has a thickness of between 150-280 nm.
18. The method of claim 12, wherein the pattern layer has a thickness of between 50-250 nm.
19. The method of claim 18, wherein the pattern layer has a thickness of between 50-150 nm.
20. The method of claim 12, wherein the pattern layer comprises an organic compound.
21. The method of claim 20, wherein the pattern layer comprises a hydrocarbon compound comprising an additive selected from the group consisting of silicon and titanium.
22. The method of claim 21, wherein the sacrificial layer comprises a material selected from the group consisting of: an organic compound and an elementary carbon.
23. The method of claim 1, wherein defining a plurality of protruding portions includes forming a gate electrode on the substrate surface, the method further comprising:
forming a first and a second sourcedrain region in the semiconductor substrate such that a transistor is at least partially formed in the semiconductor substrate.
24. The method of claim 23, wherein the first and the second sourcedrain regions are defined via performing an ion implantation procedure that requires the pattern layer and the gate electrode to perform as an implantation mask, thereby stopping the implanted ions.
25. The method of claim 23, wherein the first and the second sourcedrain region are doped with ions having a first conductivity type and the angled ion implantation procedure is performed with ions having a second conductivity type, the second conductivity type being opposite to the first conductivity type.