1. A semiconductor device comprising:
a semiconductor substrate on which a predetermined layer is formed;
a first pattern extending in plan view in a first direction in the predetermined layer;
a second pattern extending in the plan view in parallel with the first pattern in the predetermined layer; and
a third pattern between the first and second patterns extending in the plan view in parallel with the first and second patterns in the predetermined layer,
wherein the first, second and third patterns have first, second and third enlarged end portions in the first direction, respectively,
wherein the first and third enlarged end portions are arranged in different positions staggered from each other in the plan view in the first direction,
wherein the first and the second enlarged end portions are substantially aligned along a second direction orthogonal to the first direction,
wherein an area established in the predetermined layer between the first, second and third enlarged end portions is free of other pattern, and
wherein the third enlarged portion is at least partially overlapped with the first and second enlarged portions in the second direction.
2. The semiconductor device as claimed in claim 1, wherein the first and second end portions are arranged in substantially the same position as each other in the first direction.
3. The semiconductor device as claimed in claim 1, wherein the first to third patterns have substantially the same width as each other.
4. The semiconductor device as claimed in claim 1, wherein the first, second and third patterns have first, second and third body portions connected to the first, second and third end portions, respectively, and the first, second and third end portions are greater in width than the first, second and third body portions, respectively.
5. The semiconductor device as claimed in claim 1, wherein a space between the first and third patterns is substantially equal to a space between the second and third patterns.
6. The semiconductor device as claimed in claim 1, wherein the first to third patterns comprise a conductive material.
7. The semiconductor device as claimed in claim 1, wherein a distance between the first and third end portions in the first direction is greater than a space between the first and third patterns.
8. The semiconductor device as claimed in claim 7, wherein a distance between the first and second end portions in the first direction is shorter than the space between the first and third patterns.
9. The semiconductor device as claimed in claim 1, further comprising a fourth pattern extending in a second direction different from the first direction.
10. The semiconductor device as claimed in claim 9, wherein the fourth pattern is formed on the predetermined layer.
11. The semiconductor device as claimed in claim 1, wherein a lower width of each of the first to third patterns is narrower than an upper width thereof.
12. The semiconductor device as claimed in claim 1, further comprising a fourth pattern extending in the first direction, wherein a width of the fourth pattern is greater than that of each of the first to third patterns.
13. The semiconductor device as claimed in claim 12, wherein the fourth pattern is formed on the predetermined layer.
14. The semiconductor device as claimed in claim 6, wherein the first to third patterns are insulated with each other by an insulating film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A new additive for inhibiting high temperature naphthenic acid corrosion comprising polymeric thiophosphate ester having low phosphorous content, high thermal stability and low acidity, which is reaction product of reaction of hydroxyl terminated polyisobutylene or polybutene succinate ester with phosphorous pentasulphide.
2. A new additive, as claimed in claim 1, wherein said polymeric thiophosphate ester is further reacted with ethylene oxide to form ethylene oxide derivative of said polymeric thiophosphate ester.
3. A new additive, as claimed in claim 1, wherein said polymer compound has from 40 to 2000 carbon atoms.
4. A new additive, as claimed in claim 1, wherein said polymer compound has molecular weight of from 500 to 10000 dalton.
5. A new additive, as claimed in claim 1, wherein mole ratio of said phosphorous pentasulphide to said polymer compound which is hydroxyl-terminated is 0.01 to 4 moles to 1 mole respectively.
6. A new additive, as claimed in claim 1, wherein said polyisobutylene is normal or high reactive.
7. A new additive, as claimed in claim 1, wherein the effective dosage of said additive is from 1 ppm to 2000 ppm.
8. A method of making a new additive for inhibiting high temperature naphthenic acid corrosion, wherein said additive comprises polymeric hydroxyl terminated polyisobutylene thiophosphate ester having low phosphorous content, high thermal stability and low acidity, and is prepared by a process comprising the steps of:
(a) reacting high reactive polyisobutylene with maleic anhydride to form polyisobutylene succinic anhydride;
(b) reacting said polyisobutylene succinic anhydride of step (a) with a compound selected from glycols or polyols or polymeric alcohols to form hydroxyl-terminated polyisobutenyl succinate ester;
(c) reacting resultant reaction compound of step (b) with phosphorous pentasulphide, with various mole ratios of said hydroxyl-terminated polyisobutenyl succinic ester and phosphorous pentasulphide to form thiophosphate ester of polyisobutylene succinate ester, which is high temperature naphthenic acid corrosion inhibiting additive.
9. A method of using an additive for inhibiting high temperature naphthenic acid corrosion, comprising the step of:
a. heating the hydrocarbon containing naphthenic acid to vaporize a portion of said hydrocarbon;
b. allowing the hydrocarbon vapors to rise in a distillation column;
c. condensing a portion of said hydrocarbon vapors passing through the distillation column to produce a distillate
d. adding to the distillate from 1 to 2000 ppm of polyisobutylene thiophosphate ester as claimed in claim 1;
e. allowing the resultant mixture of step d to contact substantially the entire metal surfaces of said distillation column capably forming protective film on said surface whereby such surfaces are inhibited against corrosion.
10. An additive as claimed in claim 1, wherein said polymeric thiophosphate ester is further reacted with an oxide selected from group consisting of butylene oxide or propylene oxide or such other oxide to form oxide derivative of said polymeric thiophosphate ester.
11. An additive as claimed in claim 4, wherein said polymer compound has molecular weight of from 800 to 1600 dalton.
12. An additive as claimed in claim 11, wherein said polymer compound has molecular weight of from 950 to 1300 dalton.
13. An additive as claimed in claim 7, wherein the effective dosage of said additive is from 2 ppm to 200 ppm.
14. A method of making a new additive for inhibiting high temperature naphthenic acid corrosion, wherein said additive comprises polymeric ethylene oxide treated derivative of polyisobutylene thiophosphate ester having low phosphorous content, high thermal stability and low acidity, and is produced by a process comprising the steps of:
(a) reacting high reactive polyisobutylene with maleic anhydride to form polyisobutylene succinic anhydride;
(b) reacting said polyisobutylene succinic anhydride of step (a) with a compound selected from glycols or polyols or polymeric alcohols to form hydroxyl-terminated polyisobutenyl succinate ester;
(c) reacting resultant reaction compound of step (b) with phosphorous pentasulphide, with various mole ratios of said hydroxyl-terminated polyisobutenyl succinic ester and phosphorous pentasulphide to form thiophosphate ester of polyisobutylene succinate ester;
(d) reacting resultant reaction compound of step (c) with ethylene oxide to form ethylene oxide treated derivative of polyisobutylene thiophosphate ester, which is high temperature naphthenic acid corrosion inhibiting additive.
15. A method as claimed in claim 8, wherein said polyisobutylene succinic anhydride of step (a) is reacted with a compound selected from group comprising propylene glycol, butane diol, butylene glycol, butene diol, glycerin, trimethylol propane, polyethylene glycol, polypropylene glycol and polytetramethylene glycol.
16. A method as claimed in claim 8, wherein said polyisobutylene succinic anhydride of step (a) is reacted with ethylene glycol.
17. A method as claimed in claim 8, wherein said resultant reaction compound of step (c) is reacted with an oxide selected from group consisting of butylene oxide or propylene oxide or such other oxide to form oxide derivative of said polymeric thiophosphate ester.
18. A method as claimed in claim 14, wherein said polyisobutylene succinic anhydride of step (a) is reacted with a compound selected from group comprising propylene glycol, butane diol, butylene glycol, butene diol, glycerin, trimethylol propane, polyethylene glycol, polypropylene glycol and polytetramethylene glycol.
19. A method as claimed in claim 14, wherein said polyisobutylene succinic anhydride of step (a) is reacted with ethylene glycol.
20. A method as claimed in claim 14, wherein said resultant reaction compound of step (c) is reacted with an oxide selected from group consisting of butylene oxide or propylene oxide or such other oxide to form oxide derivative of said polymeric thiophosphate ester.
21. A method of using a additive for inhibiting high temperature naphthenic acid corrosion, comprising the step of:
a. heating the hydrocarbon containing naphthenic acid to vaporize a portion of said hydrocarbon;
b. allowing the hydrocarbon vapors to rise in a distillation column;
c. condensing a portion of said hydrocarbon vapors passing through the distillation column to produce a distillate
d. adding to the distillate from 1 to 2000 ppm of ethylene oxide treated compound of said polymeric thiophosphate ester as claimed in claim 2;
e. allowing the resultant mixture of step d to contact substantially the entire metal surfaces of said distillation column capably forming protective film on said surface whereby such surfaces are inhibited against corrosion.