1. An organic light-emitting display device comprising:
a first electrode;
at least three hole transport layers;
a plurality of intermediate charge generating layers, each of the intermediate charge generating layers consisting essentially of at least one material selected from the group consisting of 1,4,5,8,9,12-hexaazatriphenylenehexanitrile and tetracyanoquinodimethane (TCNQ), a first of the intermediate charge generating layers positioned between a first and a second of the hole transport layers and a second of the intermediate charge generating layers positioned between the second and a third of the hole transport layers;
an emission layer;
a plurality of electron transport layers; and
a second electrode,
wherein the emission layer comprises a host, an emitting dopant and an auxiliary dopant, the host and the auxiliary dopant able to transport different types of carriers, and
wherein the emission layer comprises at least one layer selected from the group consisting of a red emission layer, a blue emission layer and a green emission layer.
2. The organic light-emitting device of claim 1, wherein the emission layer comprises a red emission layer and a host of the red emission layer comprises at least one material selected from the group consisting of bis{2-(2-hydroxyphenyl)benzothiazolate}zinc and bis-(2-methyl-8-quinolinolate)-4-(phenylphenolate)aluminum.
3. The organic light-emitting device of claim 2, wherein an emitting dopant of the red emission layer comprises at least one material selected from the group consisting of an iridium complex and a platinum complex.
4. The organic light-emitting device of claim 2, wherein an auxiliary dopant of each of the red emission layer, the blue emission layer and the green emission layer comprises a phenylamine derivative.
5. The organic light-emitting device of claim 1, wherein the emission layer comprises a blue emission layer andor a green emission layer and a host of each of the blue emission layer and the green emission layer comprises at least one material selected from the group consisting of an anthracene derivative and a carbazole-based compound.
6. The organic light-emitting device of claim 5, wherein an emitting dopant of the blue emission layer comprises at least one material selected from the group consisting of 2,5,8,11-tetra-tert-butylphenylene and a styryl derivative.
7. The organic light-emitting device of claim 5, wherein an emitting dopant of the green emission layer comprises at least one material selected from the group consisting of an iridium complex and an anthracene derivative.
8. The organic light-emitting device of claim 1, wherein an amount of the emitting dopant in the emission layer is in a range of about 0.1 to about 49 parts by weight based on 100 parts by weight of the host, and an amount of the auxiliary dopant in the emission layer is in a range of about 0.1 to about 49 parts by weight based on 100 parts by weight of the host.
9. The organic light-emitting device of claim 1, wherein the plurality of electron transport layers comprises at least one layer selected from the group consisting of a first electron transport layer including a first electron transport material, and a second electron transport layer including a second electron transport material and a metal compound represented by Formula 1 below:
XaYb\u2003\u2003Formula 1
wherein
X is an alkali metal, an alkali earth metal or a transition metal;
Y is a Group 17 element or a C1-C20 organic group;
a is an integer from 1 to 3; and
b is an integer from 1 to 3.
10. The organic light-emitting device of claim 9, wherein the metal compound of Formula 1 comprises at least one compound selected from the group consisting of lithium quinolate, sodium quinolate, lithium acetoacetate, magnesium acetoacetate, lithium fluoride, cesium fluoride, and sodium fluoride.
11. The organic light-emitting device of claim 9, wherein an amount of the metal compound of Formula 1 is in a range of about 20 to about 60 parts by weight based on 100 parts by weight of the second electron transport layer.
12. The organic light-emitting device of claim 9, wherein each of the first electron transport material and the second electron transport material comprises independently at least one material selected from the group consisting of bis(10-hydroxybenzohquinolinato)beryllium(Bebq2) represented by Formula 2 below, a derivative thereof, 8-hydroxyquinoline zinc (Znq2) and (8-hydroxyquinoline)aluminum (Alq3).
Formula 2
13. The organic light-emitting device of claim 1, wherein each of the hole transport layers comprises at least one material selected from the group consisting of N,N\u2032-diphenyl-N,N-di(1-naphthyl)-1,1\u2032-biphenyl-4,4\u2032-diamine and N,N\u2032-diphenyl-N,N\u2032-di(3-methylphenyl)-1,1\u2032-biphenyl-4,4\u2032-diamine.
14. The organic light-emitting device of claim 1, further comprising a metal reflection layer.
15. The organic light-emitting device of claim 14, wherein the metal reflection layer comprises at least one metal selected from the group consisting of silver (Ag) and aluminum (Al).
16. The organic light-emitting device of claim 1, further comprising an electron injection layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for removing volatile residues from a substrate, comprising:
providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, wherein the load lock chamber is configured to transfer a substrate from an ambient environment outside the processing system to a vacuum environment inside the transfer chamber;
treating a substrate in the processing chamber with a chemistry comprising halogen; and
removing volatile residues from the treated substrate in the load lock chamber.
2. The method of claim 1, wherein the volatile residues are halogen-containing residues.
3. The method of claim 1, wherein the step of removing the volatile residues from the treated substrate further comprises:
heating the treated substrate to a temperature between about 20 degrees Celsius and about 400 degrees Celsius.
4. The method of claim 1, wherein the step of removing volatile residues from the substrate further comprises:
exposing the treated substrate to a gas mixture in the load lock chamber prior to venting the load lock chamber.
5. The method of claim 4, wherein the gas mixture comprises at least one of O2, O3, water vapor (H2O), H2, alkanes, alkenes and nitrogen gas (N2).
6. The method of claim 4, wherein the gas mixture comprises at least one of nitrogen gas (N2), argon (Ar) and helium (He).
7. The method of claim 4, wherein the step of exposing the treated substrate to the gas mixture further comprises:
supplying the gas mixture at a flow rate between about 500 sccm and about 5000 sccm.
8. The method of claim 4, wherein the gas mixture comprises an O2 to N2 ratio between about 1:1 and about 1:20.
9. The method of claim 4, wherein the step of exposing the treated substrate further comprises:
exposing the treated substrate to the gas mixture between about 10 seconds to about 120 seconds.
10. The method of claim 4, wherein the gas mixture further comprises O2 and water vapor (H2O) or H2, and wherein the chemistry further comprises chlorine.
11. The method of claim 1, wherein the step of removing the volatile residues further comprises:
maintaining the load lock chamber at a pressure at between about 10 mTorr and about 5000 mTorr.
12. The method of claim 1, wherein the step of removing volatile residues from the treated substrate further comprises:
exposing the treated substrate to a plasma in the load lock chamber.
13. The method of claim 12, wherein the step of exposing the treated substrate to the plasma further comprises:
forming the plasma in a remote plasma source.
14. The method of claim 12, wherein the plasma is formed from at least one of O2, O3, water vapor (H2O), H2, alkanes, alkenes, and nitrogen gas (N2) and wherein the plasma further comprises at least one of argon (Ar) and helium (He).
15. The method of claim 13, wherein the step of forming the plasma further comprises:
maintaining a plasma power at between about 500 Watts and 6000 Watts.
16. The method of claim 12, wherein the step of forming the plasma further comprises:
supplying a gas mixture at a flow rate between about 500 sccm and about 5000 sccm.
17. The method of claim 1 further comprising:
cooling the treated substrate in the load lock chamber after the volatile residues removal step; and
removing the substrate from the load lock chamber.
18. The method of claim 17, wherein the step of removing the volatile residues from the treated substrate further comprises:
detecting an end point of the removing step in the load lock chamber; and
transferring the substrate back into the transfer chamber.
19. The method of claim 1, wherein the step of treating the substrate further comprising:
treating the substrate using at least one of hydrogen bromide (HBr), chlorine (Cl2), and carbon tetrafluoride (CF4).
20. A method for removing halogen-containing residues from a substrate, comprising:
providing a processing system having a load lock chamber and at least one processing chamber coupled to a transfer chamber, wherein the load lock chamber is configured to transfer a substrate from an ambient environment outside the processing system to a vacuum environment inside the transfer chamber;
etching a substrate in the processing chamber with chemistry comprising halogen;
removing halogen-containing residues from the etched substrate in the load lock chamber;
cooling the substrate in the load lock chamber after the residue removing step; and
removing the cooled substrate from the load lock chamber.
21. The method of claim 20, wherein the step of removing halogen-containing residues further comprises:
supplying a gas mixture comprising at least one of O2, O3, water vapor (H2O), H2, alkanes, alkenes, and nitrogen gas (N2) prior to venting the load lock chamber.
22. The method of 20, wherein the step of removing halogen-containing residues further comprises:
supplying a gas mixture comprising at least one of nitrogen gas (N2), argon (Ar) and helium (He) prior to venting the load lock chamber.
23. The method of claim 20, wherein the step of removing halogen-containing residues further comprises:
heating the etched substrate to a temperature between about 20 degrees Celsius and about 400 degrees Celsius; and
maintaining a pressure of the load lock chamber at between about 10 mTorr and about 5000 mTorr.
24. The method of claim 20, wherein the step of removing halogen-containing residues further comprises:
exposing the etched substrate to a plasma in the load lock chamber.
25. The method of claim 24, wherein the step of exposing the substrate to the plasma further comprises:
forming the plasma by a remote plasma source.
26. The method of claim 24, wherein the plasma is formed from at least one of O2, O3, water vapor (H2O), H2, alkanes, alkenes, and wherein the plasma further comprises at least one of nitrogen gas (N2), argon (Ar) and helium (He).