1. A sizing composition comprising a blocked isocyanate and a maleic anhydride copolymer comprising maleic anhydride monomer and monomer selected from the group consisting of ethylene, butadiene, methyl vinyl ether, and mixtures thereof.
2. The sizing composition of claim 1, wherein the maleic anhydride copolymer comprises maleic anhydride monomer and monomer selected from the group consisting of ethylene, butadiene, and mixtures thereof.
3. The sizing composition of claim 1, wherein the blocked isocyanate comprises a caprolactam blocked polyisocyanate.
4. The sizing composition of claim 1, wherein the maleic anhydride copolymer is an alternating copolymer of maleic anhydride monomer and ethylene.
5. The sizing composition of claim 1, wherein the maleic anhydride copolymer is an alternating copolymer of maleic anhydride monomer and butadiene.
6. The sizing composition of claim 1, further comprising a film-former.
7. The sizing composition of claim 6, wherein the film-former comprises polyurethane.
8. The sizing composition of claim 1, further comprising a coupling agent.
9. The sizing composition of claim 8, wherein the coupling agent comprises a gamma-aminopropyltrialkyloxysilane.
10. The sizing composition of claim 1, further comprising a lubricant.
11. A glass fiber at least partially coated with the residue of the sizing composition of claim 1.
12. A plurality of glass fibers comprising at least one glass fiber of claim 11.
13. A glass fiber reinforced thermoplastic resin composition comprising
a thermoplastic resin, and
glass fibers at least partially coated with the residue of the sizing composition of claim 1.
14. A sizing composition comprising a blocked isocyanate and a maleic anhydride copolymer consisting of maleic anhydride monomer and isobutylene.
15. The sizing composition of claim 14, wherein the blocked isocyanate comprises a caprolactam blocked polyisocyanate.
16. The sizing composition of claim 14, wherein the maleic anhydride copolymer is an alternating copolymer of maleic anhydride monomer and isobutylene.
17. The sizing composition of claim 14, further comprising a film-former.
18. The sizing composition of claim 17, wherein the film-former comprises polyurethane.
19. The sizing composition of claim 14, further comprising a coupling agent.
20. The sizing composition of claim 19, wherein the coupling agent comprises a gamma-aminopropyltrialkyloxysilane.
21. The sizing composition of claim 14, further comprising a lubricant.
22. A glass fiber at least partially coated with the residue of the sizing composition of claim 14.
23. A plurality of glass fibers comprising at least one glass fiber of claim 22.
24. A glass fiber reinforced thermoplastic resin composition comprising
a thermoplastic resin, and
glass fibers at least partially coated with the residue of the sizing composition of claim 14.
25. A sizing composition comprising a maleic anhydride copolymer comprising maleic anhydride monomer and copolymerizable monomer, wherein a portion of the maleic anhydride copolymer is chemically modified by ammonia or a primary alkyl amine.
26. The sizing composition of claim 25, further comprising a blocked isocyanate.
27. The sizing composition of claim 26, wherein the blocked isocyanate comprises a caprolactam blocked polyisocyanate.
28. The sizing composition of claim 25, wherein the maleic anhydride copolymer comprises a maleic anhydride monomer and copolymerizable monomer, wherein a portion of the maleic anhydride copolymer is chemically modified by ammonia to convert a portion of the maleic anhydride monomers to maleimide monomers.
29. The sizing composition of claim 25, wherein the copolymerizable monomer is selected from the group consisting of ethylene, butylene, methyl vinyl ether, isobutylene, and mixtures thereof.
30. The sizing composition of claim 25, further comprising a film-former.
31. The sizing composition of claim 30, wherein the film-former comprises polyurethane.
32. The sizing composition of claim 25, further comprising a coupling agent.
33. The sizing composition of claim 32, wherein the coupling agent comprises a gamma-aminopropyltrialkyloxysilane.
34. The sizing composition of claim 25, further comprising a lubricant.
35. A glass fiber at least partially coated with the residue of the sizing composition of claim 25.
36. A plurality of glass fibers comprising at least one glass fiber of claim 35.
37. A glass fiber reinforced thermoplastic resin composition comprising
a thermoplastic resin, and
glass fibers at least partially coated with the residue of the sizing composition of claim 25.
38. A sizing composition comprising a maleic anhydride copolymer comprising maleic anhydride monomer, copolymerizable monomer, and monomer selected from the group consisting of maleimide monomer, alkyl substituted maleimide monomer, and mixtures thereof.
39. The sizing composition of claim 38, further comprising a blocked isocyanate.
40. The sizing composition of claim 39, wherein the blocked isocyanate comprises a caprolactam blocked polyisocyanate.
41. The sizing composition of claim 38, wherein the maleic anhydride copolymer comprises maleic anhydride monomer, copolymerizable monomer, and maleimide monomer.
42. The sizing composition of claim 38, wherein the copolymerizable monomer is selected from the group consisting of ethylene, butylenes, isobutylene, methyl vinyl ether, and mixtures thereof.
43. The sizing composition of claim 38, further comprising a film-former.
44. The sizing composition of claim 43, wherein the film-former comprises polyurethane.
45. The sizing composition of claim 38, further comprising a coupling agent.
46. The sizing composition of claim 45, wherein the coupling agent comprises a gamma-aminopropyltrialkyloxysilane.
47. The sizing composition of claim 38, further comprising a lubricant.
48. A glass fiber at least partially coated with the residue of the sizing composition of claim 38.
49. A plurality of glass fibers comprising at least one glass fiber of claim 48.
50. A glass fiber reinforced thermoplastic resin composition comprising
a thermoplastic resin, and
glass fibers at least partially coated with the residue of the sizing composition of claim 38.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method of forming an electrically conductive interconnect on a substrate, the method comprising the steps of:
(a) forming an interconnect feature on the substrate,
(b) depositing a first barrier layer on the substrate, the first barrier layer consisting essentially of a diamond film,
(c) depositing a seed layer consisting essentially of copper on the substrate, and
(d) depositing a conductive layer consisting essentially of copper on the substrate.
2. The method of claim 1, further comprising the step of depositing a second barrier layer on the substrate between step (b) and step (c), the first barrier layer and the second barrier layer defining a composite barrier layer.
3. The method of claim 2 wherein the step of depositing the second barrier layer comprises depositing at least one of tantalum, tantalum nitride, tungsten nitride, and titanium silicon nitride.
4. The method of claim 2 wherein the step of depositing the second barrier layer comprises deposition with a chemical vapor deposition process.
5. The method of claim 2 wherein the step of depositing the second barrier layer comprises deposition with a physical vapor deposition process.
6. The method of claim 1, further comprising the step of:
(e) planarizing the electrically conductive interconnect to a level substantially planar with a top surface of the substrate.
7. The method of claim 6 wherein step (e) comprises planarizing using a chemical mechanical polishing process.
8. The method of claim 1 wherein step (a) comprises forming the interconnect feature with an aspect ratio of at least about 5:1.
9. The method of claim 1 wherein step (b) comprises depositing the first barrier layer using a chemical vapor deposition process.
10. The method of claim 1 wherein step (c) further comprises depositing the seed layer using a chemical vapor deposition process.
11. The method of claim 1 wherein step (c) comprises depositing the seed layer using a physical vapor deposition process.
12. The method of claim 1 wherein step (d) comprises depositing the conductive layer of copper using an electroplating process.
13. An integrated circuit, the improvement comprising an electrically conductive interconnect formed according to the method of claim 1.
14. An integrated circuit, the improvement comprising an electrically conductive interconnect having:
a first barrier layer consisting essentially of a diamond film,
a seed layer consisting essentially of copper disposed adjacent the first barrier layer, and
a conductive layer consisting essentially of copper disposed adjacent the seed layer.
15. The integrated circuit of claim 14, further comprising a second barrier layer disposed between the first barrier layer and the seed layer, the first barrier layer and the second barrier layer defining a composite barrier layer.
16. The integrated circuit of claim 15 wherein the second barrier layer comprises at least one of tantalum, tantalum nitride, tungsten nitride, and titanium silicon nitride.
17. The integrated circuit of claim 14 wherein the electrically conductive interconnect is disposed within a feature having an aspect ratio of at least about 5:1.
18. A method of forming an electrically conductive interconnect on a substrate, the method comprising the steps of:
(a) forming an interconnect feature on the substrate,
(b) depositing a first barrier layer on the substrate, the first barrier layer consisting essentially of a diamond film,
(c) depositing a second barrier layer on the substrate, the second barrier layer consisting essentially of at least one of tantalum, tantalum nitride, tungsten nitride, and titanium silicon nitride, the first barrier layer and the second barrier layer defining a composite barrier layer,
(d) depositing a seed layer consisting essentially of copper on the substrate,
(e) electroplating a conductive layer consisting essentially of copper on the substrate, and
(f) planarizing the electrically conductive interconnect to a level substantially planar with a top surface of the substrate.
19. The method of claim 18, wherein the substrate further comprises at least a layer of a low dielectric constant material.
20. An integrated circuit, the improvement comprising an electrically conductive interconnect formed according to the method of claim 18.