1. A computer-implemented method, comprising:
initiating, by one or more computing devices, a Voice over IP (VoIP) session;
establishing, by the one or more computing devices, a first VoIP communication channel as an active channel for a first computing device of the one or more computing devices, wherein the active channel is fully enabled for use by the first computing device including completing a plurality of steps required to admit the first computing device into the VoIP session;
establishing, by the one or more computing devices, a second VoIP communication channel as a passive channel for the first computing device while maintaining the active channel, wherein the passive channel is partially enabled for use by the first computing device including completing a portion of the plurality of steps required to admit the first computing device into the VoIP session;
establishing, by the one or more computing devices, a third VoIP communication channel as a second passive channel for the first computing device while maintaining the active channel, wherein the second passive channel is partially enabled for use by the first computing device including completing a portion of the plurality of steps required to admit the first computing device into the VoIP session, wherein the second VoIP channel and the third VoIP channel are completed to different levels of enablement that the portion of the plurality of steps completed by the second VoIP passive channel is different than the portion of plurality of steps completed by the third VoIP passive channel;
monitoring the active channel to detect signal quality on a per user basis during the VoIP session, the signal quality based upon a noise level associated with each user;
determining that a signal quality threshold level of the active channel is reached; and
in response to determining that the signal quality threshold level is reached, implementing a failover process to establish the passive channel as a new active channel for use by the first computing device, wherein implementing the failover process includes fully enabling use of the passive channel as the new active channel including completing additional remaining steps for the passive channel required to admit the user into the VoIP session on the new active channel.
2. The computer-implemented method of claim 1 wherein partially enabling the passive channel for use by the first computing device includes partially priming the passive channel.
3. The computer-implemented method of claim 1 wherein the passive channel is persistent.
4. The computer-implemented method of claim 1 wherein implementing the failover process further includes establishing the fully enabled passive channel as the new active channel for use by the first computing device.
5. The computer-implemented method of claim 1 wherein the failover process is at least one of automatically implemented and manually implemented.
6. The computer-implemented method of claim 1 further comprising establishing a third communication channel as a new passive channel that is at least partially enabled for use by the first computing device.
7. The computer-implemented method of claim 1 further comprising terminating the active channel.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device having a layered interconnection structure including a platinum film overlying a surface of a semiconductor substrate, wherein the layered interconnection structure includes the platinum film and a neighboring film located adjacent to the platinum film, the neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium and osmium, wherein the neighboring film substantially prevents voids due to electromigration of the platinum.
2. The semiconductor device according to claim 1, further comprising a diffusion barrier layer adjacent the neighboring film, wherein said diffusion barrier layer is at least one film made of material selected from the group consisting of titanium nitride, tungsten and tantalum.
3. A semiconductor device having a layered interconnection structure including a platinum film overlying a surface of a semiconductor substrate, wherein the layered interconnection structure includes the platinum film and a neighboring film, adjacent the platinum film, located at least one of (a) above the platinum film and (b) between the platinum film and the semiconductor substrate, the neighboring film including an element selected from a group consisting of rhodium, ruthenium, iridium and osmium, wherein the neighboring film substantially prevents voids due to electromigration of the platinum.
4. The semiconductor device according to claim 3, further comprising a diffusion barrier layer adjacent the neighboring film, wherein said diffusion barrier layer is at least one film made of material selected from the group consisting of titanium nitride, tungsten and tantalum.
5. A semiconductor device having a layered interconnection structure including a copper film overlying a surface of a semiconductor substrate, wherein the layered interconnection structure includes the copper film and a neighboring film located adjacent to and in contact with the copper film, the neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, wherein the neighboring film substantially prevents voids due to electromigration of copper, and wherein said neighboring film includes a first part underneath and in contact with said copper film, and a second part overlying and in contact with said copper film.
6. A semiconductor device according to claim 1, further comprising a diffusion barrier layer adjacent the neighboring film, wherein said diffusion barrier layer is at least one film made of material selected from the group consisting of titanium nitride, tungsten and tantalum.
7. A semiconductor device comprising a first layered interconnection structure and a second layered interconnection structure, and a plug electrically connecting said first layered interconnection structure and said second layered interconnection structure,
wherein said first layered interconnection structure includes a first copper film, and a first neighboring film adjacent to and in contact with said first copper film and a first diffusion barrier film adjacent said first neighboring film, said first neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said first diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum,
wherein said second layered interconnection structure includes a second copper film, and a second neighboring film adjacent to and in contact with said second copper film and a second diffusion barrier film adjacent said second neighboring film, said second neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said second diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum, and
wherein said first neighboring film and said first diffusion barrier film are located between said first cooper film and said plug, and said second neighboring film and said second diffusion barrier film are located between said second copper film and said plug.
8. A semiconductor device comprising a first layered interconnection structure and a second layered interconnection structure, and a plug electrically connecting said first layered interconnection structure and said second layered interconnection structure,
wherein said first layered interconnection structure includes a first copper film, and a first neighboring film adjacent to and in contact with said first copper film and a first diffusion barrier film adjacent said first neighboring film, said first neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said first diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum,
wherein said second layered interconnection structure includes a second copper film, and a second neighboring film adjacent to and in contact with said second copper film and a second diffusion barrier film adjacent said second neighboring film, said second neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said second diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum, and
wherein said plug faces said first copper film, said first neighboring film and a third barrier film adjacent said plug, and at least said second neighboring film and said second diffusion barrier film are located between said second copper film and said plug.
9. A semiconductor device comprising a first layered interconnection structure and a second layered interconnection structure, and a plug electrically connecting said first layered interconnection structure and said second layered interconnection structure,
wherein said first layered interconnection structure includes a first copper film, and a first neighboring film adjacent to and in contact with said first copper film and a first diffusion barrier film adjacent said first neighboring film, said first neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said first diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum,
wherein said second layered interconnection structure includes a second copper film, and a second neighboring film adjacent to and in contact with said second copper film and a second diffusion barrier film adjacent said second neighboring film, said second neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said second diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum, and
wherein said plug faces said first copper film, said first neighboring film, said first diffusion barrier film and a third barrier film adjacent said plug, and at least said second neighboring film and said second diffusion barrier film are located between said second copper film and said plug.
10. A semiconductor device comprising a first layered interconnection structure and a second layered interconnection structure, and a plug electrically connecting said first layered interconnection structure and said second layered interconnection structure,
wherein said first layered interconnection structure includes a first copper film, and a first neighboring film adjacent to and in contact with said first copper film and a first diffusion barrier film adjacent said first neighboring film, said first neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said first diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum,
wherein said second layered interconnection structure includes a second copper film, and a second neighboring film adjacent to and in contact with said second copper film and a second diffusion barrier film adjacent said second neighboring film, said second neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said second diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum, and
wherein said first neighboring film overlies and is in contact with said first copper film.
11. A semiconductor device comprising a first layered interconnection structure and a second layered interconnection structure, and a plug electrically connecting said first layered interconnection structure and said second layered interconnection structure, wherein said first layered interconnection structure includes a first copper film, and a first neighboring film adjacent to and in contact with said first copper film and a first diffusion barrier film adjacent said first neighboring film, said first neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said first diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum,
wherein said second layered interconnection structure includes a second copper film, and a second neighboring film adjacent to and in contact with said second copper film and a second diffusion barrier film adjacent said second neighboring film, said second neighboring film having, as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and said second diffusion barrier film having at least one material selected from a group consisting of titanium nitride, tungsten and tantalum, and
wherein said first neighboring film includes a first part underneath and in contact with said first copper film, and a second part overlying and in contact with said first copper film.
12. A semiconductor device having a layered interconnection structure comprising:
a semiconductor substrate;
an insulating film overlying a surface of the semiconductor substrate; and
a plug of conductor film electrically connecting the semiconductor substrate with the layered interconnection structure,
wherein the layered interconnection structure overlies the insulating film, and includes (1) a copper film, and (2) a neighboring film in contact with said copper film and (3) a diffusion barrier film located between the copper film and the insulating film, the diffusion barrier film being further than the neighboring film from the copper film, the neighboring film having as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and the diffusion barrier film including at least one material selected from the group consisting of titanium nitride, tungsten and tantalum, and
wherein said neighboring film includes a first part underneath and in contact with said copper film, and a second part overlying and in contact with said copper film.
13. A semiconductor device having a layered interconnection structure comprising:
a semiconductor substrate;
an insulating film overlying a surface of the semiconductor substrate; and
a plug of conductor film electrically connecting the semiconductor substrate with the layered interconnection structure,
wherein the layered interconnection structure overlies the insulating film, and includes (1) a copper film, and (2) a neighboring film in contact with said copper film and (3) a diffusion barrier film located between the copper film and the insulating film, the diffusion barrier film being further than the neighboring film from the copper film, the neighboring film having as a primary constituent element thereof, an element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, and the diffusion barrier film including at least one material selected from the group consisting of titanium nitride, tungsten and tantalum, and
wherein said neighboring film overlies and is in contact with said copper film.