1. A system to encourage compliance with hand washing procedures, the system comprising:
a first beacon, associated with a boundary, to transmit a first identification signal; and
a second beacon, associated with the boundary, to transmit a second identification signal;
wherein a transition, in a vicinity of the boundary, between the first identification signal and the second identification signal indicates the boundary,
wherein the first beacon emits a first beam that carries the first identification signal and has a transverse cross-section having a maximum length along a first axis, wherein the first beacon is oriented with the first axis of the first beam substantially parallel to the boundary.
2. The system of claim 1, further comprising a wearable device comprising: a receiver to receive the first identification signal and the second identification signal; an indicator to indicate a cleanliness state of a user’s hands; and a control unit to control the indicator of hand cleanliness based at least in part on information from the receiver.
3. The system of claim 2, wherein the control unit of the wearable device comprises logic to evaluate whether the wearable device is crossing the boundary based on receipt of the first identification signal and the second identification signal by the receiver.
4. The system of claim 1, wherein the first beacon and the second beacon each comprise an infrared emitter.
5. The system of claim 1, wherein the first and second beacons have elements to attach the first and second beacons to a wall, and the boundary is implied by the wall.
6. The system of claim 1, wherein the boundary is defined by a doorway though a wall and the first beacon is attached on one side of the wall and the second beacon is attached on an opposite side of the wall.
7. The system of claim 1, wherein the first identification signal carries information indicative of which one of two sides of the boundary the first beacon is on.
8. The system of claim 1, wherein the transverse cross-section has a length along a second axis perpendicular to the first axis, wherein a ratio of the length along the first axis to the length along the second axis is at least 3:1.
9. The system of claim 8, wherein the first beacon projects an infrared beam downwards towards a floor and an average length of the first axis of the first infrared beam is between about 20 and 28 inches.
10. The system of claim 9, wherein an average length of the second axis of the first infrared beam is between about 6 and 10 inches.
11. The system of claim 1, comprising emitters each to transmit an identity signal that includes information identifying the transmitting emitter.
12. A system to encourage compliance with hand washing procedures, the system comprising:
an infrared emitter that projects a first infrared beam with a transverse cross-section having a first axis and a second axis shorter than the first axis, the transverse cross-section having a maximum length along the first axis, the infrared emitter modulating the first infrared beam to transmit a first identification signal;
wherein the infrared emitter projecting the first infrared beam is placed with the first axis of the transverse cross-section of the first infrared beam substantially parallel to a boundary.
13. The system of claim 12, further comprising an infrared emitter that projects a second infrared beam with a transverse cross-section having a first axis and a second axis shorter than the first axis, the transverse cross-section having a maximum length along the first axis, the infrared emitter modulating the second infrared beam to transmit a second identification signal; wherein the infrared emitter projecting the second infrared beam is placed with the first axis of the transverse cross-section of the second infrared beam substantially parallel to the boundary on an opposite side of the boundary from the first infrared beam.
14. The system of claim 12, further comprising a wearable device comprising: an infrared receiver; an indicator operable to indicate a cleanliness state of a user’s hands; and a control unit operable to control the indicator of hand cleanliness based at least on part based input from the infrared receiver.
15. The system of claim 14, wherein the controller of the wearable device comprises logic operable, on receiving the infrared receiver, to evaluate whether wearable device is crossing the boundary.
16. A system to encourage compliance with hand washing procedures, the system comprising:
an emitter that projects a first beam with a transverse cross-section having a first axis and a second axis shorter than the first axis, the transverse cross-section having a maximum length along the first axis, the infrared emitter modulating the first beam to transmit a first identification signal;
wherein the emitter projecting the first beam is placed with the first axis of the transverse cross-section of the first beam substantially parallel to a boundary.
17. The system of claim 16, wherein the emitter is a radiofrequency transmitter.
18. The system of claim 17, wherein the emitter comprises shielding configured to limit lateral transmission of a radiofrequency signal emitted by the radiofrequency transmitter.
19. The system of claim 16 wherein the emitter comprises an infrared emitter.
20. The system of claim 16 wherein the emitter is configured to project the first beam in response to a signal from a motion detector.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fuse, comprising:
a substrate;
a patterned heat conductive material disposed over the substrate;
a patterned, wavelength adjustable absorption material disposed over the heat conductive material; and
an insulating material having a selected thickness and a selected optical transparency disposed over and surrounding at least two sides of the patterned absorption material.
2. The fuse of claim 1, wherein the patterned, wavelength adjustable absorption material comprises a silicon-rich silicon nitride material having a specific range of silicon to nitrogen atomic ratios.
3. The fuse of claim 2, wherein the silicon to nitrogen atomic ratio is between 3:4 to 1:1.
4. The fuse of claim 2, wherein the silicon to nitrogen atomic ratio is greater than 3:4.
5. The fuse of claim 1, wherein the patterned wavelength adjustable absorption material comprises an insulating layer having an index of refraction and a thickness designed to absorb radiation at a selected wavelength.
6. The fuse of claim 5, wherein the selected wavelength is in the 1037 to 1057 nanometer wavelength range.
7. The fuse of claim 1, wherein the insulating material having a selected thickness and a selected optical transparency comprises a silicon nitride layer having an optical transmittance of greater than 50% in a 1037 to 1057 nanometer wavelength range.
8. The fuse of claim 1, further comprising an integrated circuit formed in the substrate and electrically connected to the fuse.
9. The fuse of claim 1, further including a fusible link disposed in a portion of the fuse.
10. The fuse of claim 9, wherein the fusible link comprises a portion of the fuse having a width of the patterned heat conductive material that is reduced from the width of a remaining portion of the patterned heat conductive material.
11. The fuse of claim 10, further including a patterned layer of conductive polycrystalline silicon disposed between the patterned heat conductive material and the substrate, wherein the portion of the patterned conductive polysilicon disposed beneath the fusible link has a width that is reduced to approximate the width of the patterned heat conductive material of the fusible link.
12. The fuse of claim 8, further including a dynamic memory array on the semiconductor substrate in communication with the fuse for selecting a redundant portion of the dynamic memory array to replace a defective portion of the dynamic memory array.
13. The fuse of claim 8, further including providing a static memory array on the semiconductor substrate in communication with the fuse for selecting a redundant portion of the static memory array to replace a defective portion of the static memory array.
14. The fuse of claim 8, further including providing a logic array on the semiconductor substrate in communication with the fuse for selecting a redundant portion of the logic array to replace a defective portion of the logic memory array.
15. A fuse, comprising:
a substrate;
a patterned heat conductive material disposed over the substrate;
a patterned layer of conductive polycrystalline silicon disposed between the patterned heat conductive material and the substrate;
a patterned, wavelength adjustable absorption material disposed over the heat conductive material; and
an insulating material having a selected thickness and a selected optical transparency disposed over and surrounding at least two sides of the patterned absorption material.
16. The fuse of claim 15, wherein the patterned, wavelength adjustable absorption material comprises a silicon-rich silicon nitride material having a specific range of silicon to nitrogen atomic ratios.
17. The fuse of claim 16, wherein the silicon to nitrogen atomic ratio is between 3:4 to 1:1.
18. The fuse of claim 15, wherein the silicon to nitrogen atomic ratio is greater than 3:4.
19. The fuse of claim 15, wherein the silicon to nitrogen atomic ratio is less than 1:1.
20. The fuse of claim 15, wherein the patterned wavelength adjustable absorption material comprises an insulating layer having an index of refraction and a thickness designed to absorb radiation at a selected wavelength.
21. The fuse of claim 20, wherein the selected wavelength is in the 1037 to 1057 nanometer wavelength range.
22. The fuse of claim 15, wherein the insulating material having a selected thickness and a selected optical transparency comprises a silicon nitride layer having an optical transmittance of greater than 50% in a 1037 to 1057 nanometer wavelength range.
23. A laser fuse, comprising:
a substrate;
a patterned heat conductive material disposed over the substrate;
a patterned absorption material disposed over the heat conductive material disposed to efficiently absorb laser radiation at a selected wavelength; and
an insulating material having a selected thickness and selected optical transparency to allow at least 50% of laser light to be transmitted to the patterned absorption material disposed over the patterned absorption material.
24. The laser fuse of claim 23, wherein the heat conductive material comprises tungsten.
25. The laser fuse of claim 23, wherein the heat conductive material comprises a refractory metal.
26. The laser fuse of claim 23, wherein the heat conductive material comprises a refractory metal silicide material.
27. The laser fuse of claim 23, wherein the selected laser wavelength is in a range of from 1037 to 1057 nanometers.
28. A method for forming a fuse, comprising:
forming an oxide layer on a semiconductor substrate;
forming a polycrystalline silicon layer on the oxide layer;
patterning the polycrystalline silicon layer;
forming a heat conductive layer over the polycrystalline silicon layer;
patterning the heat conductive layer;
forming a deposited radiation absorbing layer over the heat conductive layer; and
forming an insulating protective layer over the deposited radiation absorbing layer.
29. The method of forming a fuse of claim 28, wherein the radiation absorbing layer is engineered to absorb laser radiation at a selected wavelength range.
30. The method of forming a fuse of claim 29, wherein the selected laser wavelength range for absorption is between 1037 to 1057 nanometers.
31. The method of forming a fuse of claim 28, wherein the deposited radiation absorbing layer comprises a silicon rich silicon nitride material.
32. The method of forming a fuse of claim 31, wherein the silicon rich silicon nitride material comprises a material having a silicon to nitrogen atomic ration of greater than 3 to 4.
33. The method of forming a fuse of claim 28, wherein the polycrystalline silicon pattern includes a narrower region connected between wider polycrystalline silicon regions to form a fusible link.
34. The method of forming a fuse of claim 28, wherein the polycrystalline silicon layer is doped before patterning.
35. The method of forming a fuse of claim 28, wherein the heat conductive layer is formed of at least one of tungsten, a refractory metal and a refractory metal silicide.
36. The method of forming a fuse of claim 28, wherein the polycrystalline silicon layer and the heat conductive layer patterns are performed in the same patterning step.
37. The method of forming a fuse of claim 28, wherein the patterning of the heat conductive layer has substantially the same pattern as the patterned polycrystalline silicon layer.
38. The method of forming a fuse of claim 28, wherein the insulating layer is formed with a thickness that transmits greater than 50% of incident laser radiation at a wavelength of between 1037 to 1057 nanometers.