What is claimed is:
1. A semiconductor device comprising:
a semiconductor chip having a side surface, a rear surface, and a front surface on which a circuit has been formed; and
a metal film for blocking light,
wherein the metal film covers the side surface and the rear surface of the semiconductor chip.
2. The semiconductor device according to claim 1, wherein the metal film covers the entire rear surface of the semiconductor chip.
3. The semiconductor device according to claim 1, wherein the metal film is formed of two layers, namely, a Ti layer and a Au layer, and the Au layer covers the Ti layer.
4. The semiconductor device according to claim 3, wherein the Ti layer has a thickness of 40 nm or more, and the Au layer has a thickness of 200 nm or more.
5. The semiconductor device according to claim 1, wherein the metal film is formed of two layers, namely, a Ni layer and a Au layer, and the Au layer covers the Ni layer.
6. The semiconductor device according to claim 5, wherein the Ni layer has a thickness of 40 nm or more, and the Au layer has a thickness of 200 nm or more.
7. A semiconductor device comprising:
a semiconductor chip having a side surface, a rear surface, and a front surface on which a circuit has been formed;
first and second resin films; and
bump electrodes electrically connected to the circuit,
the first resin film seals the front surface of the semiconductor chip,
the second resin film is formed of an epoxy-based resin or a silicone-based resin, blocks light, and covers the side surface and the rear surface of the semiconductor chip, and
the bump electrode is formed on the first resin film.
8. The semiconductor device according to claim 7, wherein the second resin film covers the entire rear surface of the semiconductor chip.
9. The semiconductor device according to claim 7, wherein the second resin film contains a pigment.
10. The semiconductor device according to claim 9, wherein the pigment is carbon.
11. A semiconductor device comprising:
a first main front surface on which circuit elements have been formed;
a second main front surface substantially opposing the first main front surface;
a semiconductor substrate having a plurality of side surfaces between the first main front surface and the second main front surface;
a first resin film covering the first main front surface;
a plurality of external terminals that are electrically connected to the circuit elements and project from the front surface of the first resin film; and
a metal film that covers side surfaces of the semiconductor substrate and the second main front surface, and blocks light.
12. The semiconductor device according to claim 11, wherein the metal film covers the entire second main front surface of the semiconductor substrate.
13. The semiconductor device according to claim 11, wherein the metal film is formed of two layers, namely, a Ti layer and a Au layer, and the Au layer covers the Ti layer.
14. The semiconductor device according to claim 13, wherein the Ti layer has a thickness of 40 nm or more, and the Au layer has a thickness of 200 nm or more.
15. The semiconductor device according to claim 11, wherein the metal film is formed of two layers, namely, a Ni layer and a Au layer, and the Au layer covers the Ni layer.
16. The semiconductor device according to claim 15, wherein the Ni layer has a thickness of 40 nm or more, and the Au layer has a thickness of 200 nm or more.
17. A semiconductor device comprising:
a first main front surface on which circuit elements have been formed;
a second main front surface substantially opposing the first main front surface;
a semiconductor substrate having a plurality of side surfaces between the first main front surface and the second main front surface;
a first resin film covering the first main front surface;
a plurality of external terminals that are electrically connected to the circuit elements and project from the front surface of the first resin film; and
a second resin film that covers side surfaces of the semiconductor substrate and the second main front surface, blocks light, and is formed of an epoxy-based resin or a silicone-based resin.
18. The semiconductor device according to claim 17, wherein the second resin film covers the entire second main front surface of the semiconductor substrate.
19. The semiconductor device according to claim 17, wherein the second resin film contains a pigment.
20. The semiconductor device according to claim 19, wherein the pigment is carbon.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A polyvinyl alcohol polymer film comprising difference in retardation between two points separated by 1 cm along the TD direction of the film is 5 nm or less.
2. The polyvinyl alcohol polymer film according to claim 1, wherein the polyvinyl alcohol polymer film is used for a polarization film.
3. A polarization film produced by using the polyvinyl alcohol polymer film for a polarization film according to claim 2.
4. A method of producing a polyvinyl alcohol polymer film which comprises the step of contacting a polyvinyl alcohol polymer with a surface for drying (first drying surface) to obtain the polyvinyl alcohol polymer film, wherein the length of the first drying surface is within the range of 3 m to 200 m, and the water content of the film when peeled after passing through the first drying surface is 50% by weight or less.
5. The method of producing a polyvinyl alcohol polymer film according to claim 4, wherein both sides of the polyvinyl alcohol polymer film are dried to form a film in two stages of said first drying surface and a subsequent second drying surface or in more stages, while one side of the film being dried by the first drying surface and the other side of the film being dried by the second drying surface.
6. The method of producing a polyvinyl alcohol polymer film according to claim 5 wherein the length of said second drying surface is set as 1.2 times or less of the length of said first drying surface.
7. A method of producing a polyvinyl alcohol polymer film for a polarization film by the method of producing a polyvinyl alcohol polymer film according to claim 4.
8. A method of producing a polyvinyl alcohol polymer film for a polarization film by the method of producing a polyvinyl alcohol polymer film according to claim 5.
9. A method of producing a polyvinyl alcohol polymer film for a polarization film by the method of producing a polyvinyl alcohol polymer film according to claim 6.
10. The polyvinyl alcohol polymer film according to claim 1 produced by the method of producing a polyvinyl alcohol polymer film according to claim 4.
11. The polyvinyl alcohol polymer film according to claim 1 produced by the method of producing a polyvinyl alcohol polymer film according to claim 5.
12. The polyvinyl alcohol polymer film according to claim 1 produced by the method of producing a polyvinyl alcohol polymer film according to claim 6.