1. A semiconductor device, comprising:
a dielectric layer on a substrate;
a dual damascene structure filled with a conductive material and inlaid in said dielectric layer; and
a dummy via structure filled with an optical sensitive organic material and inlaid in said dielectric layer, wherein said dummy via structure comprises at least two dummy vias filled with said optical sensitive organic material and located adjacent to two sides of said dual damascene structure respectively.
2. The semiconductor device of claim 1, wherein said dummy vias are filled with an organic bottom anti-reflective coating.
3. The semiconductor device of claim 1, wherein said dummy vias are filled with a positive tone photoresist or a negative tone photoresist.
4. The semiconductor device of claim 1, wherein said dielectric layer has dielectric constant less than 4.0.
5. The semiconductor device of claim 1, wherein said dual damascene structure comprises an upper trench portion and a lower via portion, and said dummy vias are laterally adjacent to said lower via portion.
6. A semiconductor device, comprising:
a dielectric layer on a substrate, having dielectric constant less than 4.0;
a dual damascene structure filled with a conductive material and inlaid in said dielectric layer; and
a dummy via structure filled with a TEOS(Tetraethyl Ortho silicate)-based dielectric material and inlaid in said dielectric layer, wherein said dummy via structure comprises at least two dummy vias filled with said TEOS-based dielectric material and located adjacent to two sides of said dual damascene structure respectively.
7. The semiconductor device of claim 6, wherein said dual damascene structure comprises an upper trench portion and a lower via portion, and said dummy vias are laterally adjacent to said lower via portion.
8. A semiconductor device, comprising:
a dielectric layer on a substrate;
a dual damascene structure filled with a conductive material and inlaid in said dielectric layer; and
a dummy via structure filled with a sacrificial light absorbing material (SLAM) and inlaid in said dielectric layer, wherein said dummy via structure comprises at least two dummy vias filled with said SLAM and located adjacent to two sides of said dual damascene structure respectively.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of controlling pain or fever in a subject in need thereof comprising administering to the subject a therapeutically effective amount of a compound of Formula (I):
wherein R3 is hydrogen and R1 and R2 taken together form an optionally substituted selected from the group consisting of pyarazole, and imidazole;
R4 is a hydrogen;
n is an integer from 1 to 3;
and enantiomers, diastereomers, tautomers, or pharmaceutically acceptable salts thereof.
2. The method of controlling pain or fever of claim 1, wherein R1 and R2 taken together form an optionally substituted imidazole and enantiomers, diastereomers, tautomers, or pharmaceutically acceptable salts thereof.
3. A method of controlling pain or fever in a subject in need thereof comprising administering to the subject a therapeutically effective amount of a compound selected from the group consisting of:
5-Methyl-1H-pyrazole-3-carboxylic acid (4-hydroxy-phenyl)-amide; and
3H-Imidazole-4-carboxylic acid (4-hydroxy-phenyl)-amide;
and enantiomers, diastereomers, tautomers, or pharmaceutically acceptable salts thereof.
4. The method of controlling pain or fever of claim 3, wherein the compound is 5-Methyl-1H-pyrazole-3-carboxylic acid (4-hydroxy-phenyl)-amide and enantiomers, diastereomers, tautomers, or pharmaceutically acceptable salts thereof.