1. A nonvolatile memory device, comprising:
a stacked structure on a semiconductor substrate, the stacked structure comprising conductive patterns and interlayer dielectric patterns alternately stacked therein;
a semiconductor pattern connected to the semiconductor substrate by passing through the stacked structure;
a data storage layer between the semiconductor pattern and the conductive patterns; and
a fixed charge layer between the semiconductor pattern and the interlayer dielectric patterns, the fixed charge layer including fixed charges,
wherein electrical polarity of the fixed charges is equal to electrical polarity of majority carriers of the semiconductor pattern.
2. The nonvolatile memory device as claimed in claim 1, wherein the semiconductor pattern includes a p-type semiconductor material, and the fixed charge layer includes elements generating positive fixed charges.
3. The nonvolatile memory device as claimed in claim 2, wherein the elements generating the positive fixed charges include nitrogen (N), hydrogen (H), hafnium (HF), andor zirconium (Zr).
4. The nonvolatile memory device as claimed in claim 2, wherein the fixed charge layer includes silicon nitride (SiN), silicon oxynitride (SiON), hafnium oxide, andor zirconium oxide.
5. The nonvolatile memory device as claimed in claim 1, wherein the semiconductor pattern includes an n-type semiconductor material, and the fixed charge layer includes elements generating negative fixed charges.
6. The nonvolatile memory device as claimed in claim 5, wherein the elements generating the negative fixed charges includes fluorine (F) andor aluminum (Al).
7. The nonvolatile memory device as claimed in claim 5, wherein the fixed charge layer includes aluminum oxide andor aluminum oxynitride.
8. The nonvolatile memory device as claimed in claim 1, wherein the semiconductor pattern includes a channel region adjacent to the conductive pattern and a channel connection region adjacent to the fixed charge layer, and a number of majority carriers in the channel connection region is smaller than a number of majority carriers in the channel region.
9. The nonvolatile memory device as claimed in claim 1, wherein the data storage layer extends on top surfaces and bottom surfaces of the conductive pattern.
10. The nonvolatile memory device as claimed in claim 1, wherein the interlayer dielectric patterns include an insulating material having a dielectric constant smaller than a dielectric constant of a material of the fixed charge layer.
11-20. (canceled)
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of recycling spent filter media comprising:
providing a cloth, the cloth being spent polymer-base filter media;
rolling the spent polymer-base filer media into a roll;
removing foreign solid particles from the roll of cloth by unrolling the cloth and passing the cloth past and in contact with a rotating brush;
rolling the brushed cloth back into the form of a roll;
cutting the roll of cloth into a plurality of sections;
washing the plurality of cloth sections;
drying the plurality of cloth sections; and
processing the dried cloth to produce polymer-base particles, the particles selected from a group consisting of granules, pellets and combinations thereof, and used to produce a component.
2. The method of claim 1, wherein the processing of the dried cloth is selected from the group consisting of densifying and granulating.
3. The method of claim 1, wherein the cloth has been used as metal working filtration media.
4. The method of claim 1, further including removing the foreign solid particles from the cloth using a squirrel cage.
5. The method of claim 1, wherein the washing the cloth is dry cleaning the cloth.
6. The method of claim 1, wherein the washing the cloth is washing the cloth using soap and water.
7. The method of claim 6, further including bailing the polymer-base particles.
8. A method of making a component out of recycled polymer-base filter media cloth, the method comprising:
providing a cloth, the cloth being spent polymer-base filter media;
rolling the cloth into a roll;
removing foreign solid particles from the roll of cloth by unrolling the roll of cloth and passing the unrolled cloth between a pair of rotating brushes, the brushes mechanically removing the foreign solid particles from the cloth;
rolling the cloth that has passed between the pair of rotating brushes back into a roll;
cutting the roll of cloth into a plurality of sections such that a plurality of rectangular sheets of cloth are produced;
washing the rectangular sheets of cloth;
drying the rectangular sheets of cloth;
processing the rectangular sheets of cloth to produce polymer particles, the particles selected from a group consisting of granules, pellets and combinations thereof and the processing selected from a group consisting of granulating and densifying;
providing an injection molding machine;
placing the particles of polymer into the injection molding machine; and
injection molding the particles of polymer to produce a component.
9. The method of claim 8, wherein the cloth has been used as a metal working filter media.
10. The method of claim 8, further including spinning the rectangular sheets of cloth in a squirrel cage in order to remove additional foreign solid particles from the cloth.
11. The method of claim 8, wherein washing the rectangular sheets of cloth is dry cleaning the rectangular sheets of cloth.
12. The method of claim 8, wherein the component is a dunnage for holding automotive parts.
13. The method of claim 10, wherein the component is a pallet.