1. An intelligent wheel apparatus comprising:
a generally circular wheel defining an outer circumference and including a hub adapted for rotation about an axis in a first direction to move the outer circumference of the wheel over a travel surface;
a controller coupled to the wheel;
a plurality of substantially radially extendable spoke mechanisms spaced around the hub and fastened to the wheel;
means for moving a spoke in each spoke mechanism between an extended position and a retracted position in response to commands from the controller, wherein a tip of the spoke extends beyond the outer circumference of the wheel when the spoke is moved to an extended position;
an obstacle sensor associated with each spoke mechanism and coupled to the controller, wherein each obstacle sensor is capable of detecting a discontinuity in the travel surface within a predetermined field of view; and
wherein the controller operably calculates a virtual surface over a detected discontinuity within the travel surface and commands one or more spoke mechanisms to move their respective spokes so that the outer circumference of the wheel substantially follows the calculated virtual surface as the intelligent wheel apparatus moves in the first direction.
2. The apparatus according to claim 1, wherein axes of the spokes pass through a center of the wheel.
3. The apparatus according to claim 1, wherein axes of the spokes are parallel to a radius through a center of the wheel.
4. The apparatus according to claim 1 wherein the controller calculates the virtual surface from at least one sensor signal associated with a spoke mechanism forward of a bottom dead center (BDC) position of the wheel and a sensor signal associated with a spoke mechanism at a position after BDC.
5. The apparatus according to claim 4 wherein the spoke mechanism forward of BDC is at a position BDC\u22121.
6. The apparatus according to claim 5 wherein the controller calculates a distance from the tip of the spoke in the spoke mechanism at position BDC\u22121 to the travel surface to determine an extension amount.
7. The apparatus according to claim 6 wherein the controller repeatedly calculates the extension amount for the spoke mechanism at position BDC\u22121 until the spoke mechanism reaches BDC.
8. The apparatus according to claim 5 wherein:
the spoke mechanism at the position after BDC is at a position BDC+1;
a spoke mechanism forward of the position BDC\u22121 is at a position BDC\u22122; and
the obstacle sensors associated with the spoke mechanisms at positions BDC\u22122, BDC\u22121, BDC and BDC+1 are activated to search for discontinuities within the travel surface, while the obstacle sensors associated with a remaining plurality of spoke mechanisms that fall outside of the positions BDC\u22122, BDC\u22121, BDC and BDC+1 are deactivated to conserve power.
9. The apparatus according to claim 8, wherein the spokes for each of the remaining plurality of spoke mechanisms that fall outside of the positions BDC\u22122, BDC\u22121, BDC and BDC+1 are moved to a retracted position.
10. The apparatus according to claim 8, further comprising an angular orientation sensor to determine which of the plurality of spoke mechanisms are located at the positions BDC\u22122, BDC\u22121, BDC and BDC+1.
11. The apparatus according to claim 1 wherein the virtual surface is substantially flat.
12. The apparatus according to claim 1, wherein the controller further comprises a continuous sense-plan-act reactive system controller.
13. The apparatus according to claim 1, wherein the detected discontinuity within the travel surface comprises one of a positive or negative vertical discontinuity.
14. The apparatus according to claim 13, wherein the detected discontinuity within the travel surface further comprises a step.
15. The apparatus according to claim 1, further comprising a force sensor associated with each spoke mechanism to provide feedback to the controller regarding at least one of a lateral force and a lifting force applied to each spoke.
16. An intelligent wheel apparatus capable of climbing and descending steps, comprising:
a circular wheel defining a hub and an outer circumference adapted for rotation in a first direction, wherein the outer circumference of the wheel is adapted to move over a travel surface;
a plurality of substantially radially extendable spoke mechanisms spaced around the hub, wherein each spoke mechanism includes means for moving a spoke between a retracted position and an extended position, and wherein a tip of the spoke extends beyond the outer circumference of the wheel when the spoke is moved to the extended position;
an obstacle sensor associated with each spoke mechanism to detect a vertical discontinuity in the travel surface indicative of a step; and
a controller attached to the wheel and coupled to each spoke mechanism and each obstacle sensor to operably calculate a virtual surface over a detected step, wherein the controller commands one or more spoke mechanisms to move their respective spokes to engage the step so that the outer circumference of the wheel substantially follows the calculated virtual surface as the intelligent wheel apparatus moves over the step.
17. The apparatus according to claim 16 wherein the virtual surface is substantially flat.
18. The apparatus according to claim 16, further comprising a force sensor associated with each spoke mechanism to provide feedback to the controller regarding at least one of a lateral force and a lifting force applied to each spoke.
19. The apparatus according to claim 16, further comprising an angular orientation sensor to determine an orientation for each of the plurality of spoke mechanisms.
20. An intelligent wheel apparatus comprising:
a circular wheel defining a hub and an outer circumference adapted for rotation in a first direction, wherein the outer circumference of the wheel is adapted to move over a travel surface;
a plurality of substantially radially extendable spokes spaced around the hub, each spoke including a tip positioned substantially within the outer circumference of the wheel when the spoke is in a retracted position, wherein extension of the spoke causes the spoke tip to extend beyond the outer circumference of the wheel to effectively increase the radius of the wheel, and wherein the plurality of spoke tips are individually extendable and are not connected to adjacent spoke tips;
an obstacle sensor to detect a vertical discontinuity in the travel surface as the wheel moves over the travel surface; and
a controller operably coupled to the obstacle sensor, wherein the controller operably calculates a virtual surface over a detected vertical discontinuity and selectively extends one or more spokes so that the outer circumference of the wheel substantially follows the calculated virtual surface as the intelligent wheel apparatus moves in the first direction.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor memory device comprising a plurality of electrically conductive regions extending parallel to one another on a substrate surface forming a memory cell array area; wherein
two of the plural electrically conductive regions are connected as a pair to form a set of sub bit lines;
each set of the sub bit lines are connected to a main bit line via an associated selection transistor;
a plurality of said selection transistors are arranged on both ends of said memory cell array, in an opposing relation to one another; and
a plural number of sets of said sub bit lines respectively connected to plural selection transistors on one end of said memory cell array and a plural number of sets of said sub bit lines respectively connected to plural selection transistors on the opposite end of said memory cell array are arranged alternately.
2. The semiconductor memory device as defined in claim 1, wherein
there are arranged, in a region in the memory cell array area defined between said one set of sub bit lines,
each one of two sets of sub bit lines respectively connected via selection transistors to two main bit lines provided on both sides adjacent to a main bit line to which is connected said one set of sub bit lines, and each one of two sets of sub bit lines respectively connected to the two neighboring main bit lines via selection transistors on the opposite side of the memory cell array, totaling at four sub bit lines.
3. A semiconductor memory device comprising a memory cell array in which a plurality of memory cells are arranged in an array: and
a plurality of selection transistors arranged respectively on one side and on another side opposing to said one side of sad memory cell array; wherein
two electrically conductive regions formed in separation from each other on the substrate surface are interconnected to form a set of sub bit lines, the set of the sub bit lines being connected to one main bit line via an associated one of the selection transistors; and wherein
there are arranged, in a region in the memory cell array area defined between a pair of electrically conductive regions composing one set of said sub bit lines, each one of paired electrically conductive regions forming two sets of sub bit lines respectively connected via selection transistors to two main bit lines on both sides adjacent to a main bit line associated with the set of the sub bit lines, and each one of paired electrically conductive regions forming two sets of sub bit lines respectively connected to the two neighboring main bit lines via selection transistors on the opposite side of the memory cell array, totaling at four sub bit lines.
4. The semiconductor memory device as defined in claim 1, wherein the selection transistors are isolated from one another by a field oxide film.
5. The semiconductor memory device as defined in claim 1, wherein, of respective longitudinal ends of the paired electrically conductive regions of the set of sub bit lines, the ends lying on the side of the selection transistor associated with the set of sub bit lines (referred to as one side ends) are interconnected via a wiring arranged on an upper layer on the substrate.
6. The semiconductor memory device as defined in claim 5, wherein the opposite side ends of the paired electrically conductive regions of the set of sub bit lines, lying on the longitudinally opposite side to the one side ends, are interconnected via a wiring arranged on an upper layer on the substrate.
7. The semiconductor memory device as defined in claim 5, wherein at least one of the paired electrically conductive regions forming the set of the sub bit lines has one side end and longitudinally opposite side end interconnected via a wiring arranged on an upper layer on the substrate.
8. The semiconductor memory device as defined in claim 5, wherein each of the paired electrically conductive regions forming the set of the sub bit lines has one side end and longitudinally opposite side end interconnected via a wiring arranged on an upper layer on the substrate.
9. The semiconductor memory device as defined in claim 1, wherein the paired electrically conductive regions forming the set of the sub bit lines are split in a plurality of stages and provided between one side of the memory cell array and the side thereof opposite to the one side;
a wiring formed on an upper layer on the substrate in association with the set of the sub bit lines, said wiring extending across a plurality of stages of the paired electrically conductive regions, from one side connected to the selection transistor associated with the set of the sub bit lines to the opposite side;
the wiring lying extending across a plurality of stages of the paired electrically conductive regions being connected to the wiring interconnecting the electrically conductive regions of the respective stages.
10. The semiconductor memory device as defined in claim 1, wherein, of respective longitudinal ends of the paired electrically conductive regions of the set of sub bit lines, the ends lying on the side of the selection transistor associated with the set of sub bit lines (referred to as one side ends) are interconnected via a first wiring arranged on an upper layer on the substrate, and wherein
the ends longitudinally opposite to the one lateral side end, are interconnected by a second wiring arranged on an upper layer on the substrate; and
the first wiring and the second wiring are interconnected via a third wiring arranged on an upper layer on the substrate.
11. The semiconductor memory device as defined in claim 1, wherein, of respective longitudinal ends of the paired electrically conductive regions of the set of sub bit lines, the ends lying on the side of the selection transistor associated with the set of sub bit lines (referred to as one side ends) are interconnected via a first wiring arranged on of an upper layer of the substrate, and wherein the ends longitudinally opposite to the one lateral side end, are interconnected by a second wiring arranged on of an upper layer of the substrate;
both longitudinal ends of the electrically conductive region being interconnected via a third wiring arranged on of an upper layer of the substrate.
12. The semiconductor memory device as defined in claim 1, wherein one end of one of the paired electrically conductive regions forming the set of sub bit lines, is connected to the longitudinally opposite end of the other of the paired electrically conductive regions by a wiring provided on an upper layer on the substrate.
13. The semiconductor memory device as defined in claim 12, wherein one end of one of the paired two electrically conductive regions forming the set of sub bit lines is interconnected to another end of the other of the paired electrically conductive regions by a wiring provided on an upper layer on the substrate, said one end of the one of the paired electrically conductive region located on one side connected to the selection transistor, said another end longitudinally opposite to said one end.
14. The semiconductor memory device as defined in claim 1, wherein there are provided a plurality of stages of paired electrically conductive regions forming one set of said sub bit lines from a selection transistor on one side of the memory cell array to a selection transistor on the opposite side of the memory cell array, the paired electrically conductive regions being formed by interconnecting one side end of one electrically conductive region to another end of the other electrically conductive region, by a wiring provided on an upper layer on the substrate, said another end being longitudinally opposite to the one end.
15. A semiconductor memory device comprising:
a first group of electrically conductive regions composed of a plural number of electrically conductive regions extending parallel to one another on a memory cell array region on a substrate surface, from one side of the memory cell array to the opposite side thereof, and a second group of electrically conductive regions composed of a plural number of electrically conductive regions extending parallel to one another from the other end to the one end of the memory cell array;
each of a plurality of gate electrodes extending parallel to one another via an insulating film on the substrate surface in a direction perpendicular to a direction along which the electrically conductive regions are extended, each gate electrode composing a word line;
two of the electrically conductive regions of the plural electrically conductive regions belonging to the same set being paired to form a set of sub bit lines;
one of the paired electrically conductive regions forming one set of the sub bit lines being connected to one of the paired diffusion layers of the selection transistor, the gate of which is connected to a selection control line, the other diffusion layer of the selection transistor being connected to a main bit line formed on an upper layer on the substrate;
the paired electrically conductive regions forming the set of the sub bit lines having respective ends on the side connected to the selection transistor (termed one side ends) via a contact to one wiring on an upper layer on the substrate; and wherein
between the paired electrically conductive regions forming the set of the sub bit lines, there are arranged each one of paired electrically conductive regions forming two sets of the sub bit lines, connected via selection transistors to two main bit lines lying on both sides of the main bit line to which the set of the sub bit lines are connected via selection transistor and each one of paired electrically conductive regions forming two sets of the sub bit lines, respectively connected to two main bit lines neighboring to each other via a selection transistor lying opposite to the selection transistor connected to the set of the sub bit lines, totaling at four electrically conductive regions.
16. The semiconductor memory device as defined in claim 15, wherein
the paired electrically conductive regions forming the set of the sub bit lines are connected to the first wiring formed on an upper layer on the substrate by a contact at respective ends connected to the selection transistor associated with the set of the sub bit lines (termed one side ends), while being connected by a contact to a second wiring formed on an upper layer on the substrate at respective ends longitudinally opposite to the one side ends of the paired electrically conductive regions.
17. The semiconductor memory device as defined in claim 15, wherein
the longitudinal ends of the paired electrically conductive regions are interconnected via a wire provided on an substrate upper layer.
18. The semiconductor memory device as defined in claim 15, wherein
there are arranged, for each splitting unit of cell arrays, a structure in which, between the paired electrically conductive regions forming one set of the sub bit lines, there are arranged, each one of paired electrically conductive regions forming two sets of the sub bit lines, connected via selection transistors to two main bit lines lying on both sides of the main bit line to which the set of the sub bit lines are connected via selection transistors and each one of paired electrically conductive regions forming two sets of the sub bit lines, respectively connected to two neighboring main bit lines via selection transistors on the opposite side to the selection transistor connected to said one set of the sub bit lines, totaling at four electrically conductive regions, there being arranged a plurality of stages of the splitting units of the cell arrays from one end to the opposite end of the memory cell array;
there are arranged a plurality of wrings on an upper layer on the substrate, each wring formed in association with said one set of the sub bit lines, extending from one side connected to the selection transistor to the opposite side, across the paired electrically conductive regions of the splitting units of the plural stages; and wherein
the wiring extended across the paired electrically conductive regions of the splitting units of the plural stages of the cell array is connected to each of wirings interconnecting the paired electrically conductive regions forming the sets of the sub bit lines of the splitting units of the plural stages.
19. The semiconductor memory device as defined in claim 15, wherein
the selection transistors are isolated from one another by a field oxide film.
20. The semiconductor memory device as defined in claim 18, wherein
there are provided cell arrays sharing the wiring interconnecting the paired electrically conductive regions composing the one set of sub bit lines by two splitting units.
21. A semiconductor memory device comprising a first group of electrically conductive regions composed of a plural number of electrically conductive regions extending parallel to one another on a memory cell array region on a substrate surface from one side of the memory cell array to the opposite side thereof, and a second group of electrically conductive regions composed of a plural number of electrically conductive regions extending parallel to one another from the other end to the one end of the memory cell array;
each of group of gate electrodes, each gate electrode extending parallel to one another via an insulating film on the substrate surface in a direction perpendicular to the extending direction of the electrically conductive regions, to form a word line;
two of the electrically conductive regions of the plural electrically conductive regions belonging to the same group being paired to form a set of sub bit lines;
one of the paired electrically conductive regions forming one set of the sub bit lines being connected to one of the paired diffusion layers of the selection transistor to the gate of which is connected a selection control line, the other diffusion layer of the selection transistor being connected to a main bit line on an upper layer on the substrate;
the end of the paired electrically conductive regions forming the set of the sub bit lines, lying on the side of one electrically conductive region connected to the selection transistor (termed one side end) is connected via a contact to one wiring of the wiring layer on a upper substrate layer to the longitudinally opposite end of the other electrically conductive region; and wherein
there are arranged, between the paired electrically conductive regions forming the set of the sub bit lines, each one of paired electrically conductive regions forming two sets of the sub bit lines, connected via selection transistors to two main bit lines lying on both sides of the main bit line to which the set of the sub bit lines are connected via selection transistor and each one of paired electrically conductive regions forming two sets of the sub bit lines, respectively connected to two main neighboring bit lines via a selection transistor connected to the set of the sub bit lines, totaling at four electrically conductive regions.
22. The semiconductor memory device as defined in claim 1, further comprising means for applying a ground potential and a preset positive voltage to first and second ones of two neighboring electrically conductive regions associated with a selected memory cell, respectively, and preset positive voltage to a gate electrode associated with the selected memory cell and for applying, when writing in the memory cell, a voltage between the positive voltage applied to the second electrically conductive region and the ground potential to a third electrically conductive region neighboring to the second electrically conductive region to which the positive voltage is applied, the third electrically conductive region lying on the opposite side to the first electrically conductive region.
23. The semiconductor memory device as defined in claim 1, further comprising means for applying a ground potential and a preset positive voltage to first and second ones of two electrically conductive regions associated with a selected memory cell, and a preset positive voltage to a gate electrode associated with the selected memory cell and for applying, when writing in the memory cell, a positive voltage of the same level as that of the second electrically conductive region, to an electrically conductive region neighboring to the second electrically conductive region supplied with the positive voltage, and to an electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region, the electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region being from the electrically conductive regions neighboring to a third by being electrically conductive region forming a set of the sub bit lines by paired to the second electrically conductive region; and
for applying a voltage between the positive voltage applied to the second electrically conductive region and the ground potential to at least one of the first electrically conductive region, fourth electrically conductive region forming one set of sub bit lines by being paired with the first electrically conductive region and an electrically conductive region arranged between electrically conductive regions to which is applied the positive voltage.
24. The semiconductor memory device as defined in claim 1, further comprising means for applying a ground potential and a preset positive voltage to first and second ones of two neighboring electrically conductive regions associated with a selected memory cell, a preset positive voltage to a gate electrode associated with the selected memory cell and for applying, when reading out from the memory cell, a voltage of the same level as the second electrically conductive region to third electrically conductive regions among electrically conductive regions neighboring to the second electrically conductive region supplied with the positive voltage, said third electrically conductive regions lying on an adjacent column located on a side opposite to the first electrically conductive region.
25. The semiconductor memory device as defined in claim 1, further comprising means for applying a ground potential and a preset positive voltage to first and second ones of two neighboring electrically conductive regions associated with a selected memory cell, and a preset positive voltage to a gate electrode associated with the selected memory cell and for applying, when reading out from the memory cell, a voltage of the same level as the second electrically conductive region to an electrically conductive region neighboring to the second electrically conductive region supplied with the positive voltage, and to an electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region, the electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region being from the electrically conductive regions neighboring to a third by being electrically conductive region forming a set of the sub bit lines by paired to the second electrically conductive region; and
for applying a ground voltage to at least one of the first electrically conductive region and an electrically conductive region arranged between a fourth electrically conductive region forming a set of sub bit lines by being paired with the first electrically conductive region and the electrically conductive region to which is applied the positive voltage.
26. The semiconductor memory device as defined in claim 1, operating as a programmable non-volatile semiconductor storage device, wherein
a memory cell formed in two neighboring electrically conductive regions includes, intermediate the substrate surface and the gate electrode, an ONO film composed of a first oxide film, a nitride film and a second oxide film.
27. The semiconductor memory device as defined in claim 26, operating as a programmable non-volatile semiconductor storage device, wherein two storage nodes are provided for one memory cell and wherein two bit data are stored in one the memory cell.
28. A method of controlling write operation in a semiconductor storage device in which a set of sub bit lines are formed by interconnecting a pair of electrically conductive regions extending parallel to each other on a substrate surface,
a plurality of selection transistors for connecting a set of sub bit lines to an associated main bit line are arranged on both longitudinal end sides of a memory cell array; and in which
a plurality of sets of sub bit lines respectively connected to the selection transistors arranged on one and on the other longitudinal end sides of the memory cell array are arranged alternately; said method comprising the steps of:
applying a ground potential and a preset positive voltage to first and second ones of two neighboring electrically conductive regions associated with a selected memory cell, and a preset positive voltage to a gate electrode associated with the selected memory cell; and
applying, when writing in the memory cell, a voltage between the positive voltage applied to the second electrically conductive region and the ground potential to a third electrically conductive region neighboring to the second electrically conductive region to which the positive voltage is applied, the third electrically conductive region lying on the opposite side to the first electrically conductive region.
29. A method of controlling write operation in a semiconductor storage device in which a set of sub bit lines are formed by interconnecting a pair of electrically conductive regions extending parallel to each other on a substrate surface,
a plurality of selection transistors for connecting a set of sub bit lines to an associated main bit line are arranged on both longitudinal end sides of a memory cell array; and in which
a plurality of sets of sub bit lines respectively connected to the selection transistors arranged on one and on the other longitudinal end sides of the memory cell array are arranged alternately; said method comprising the step of:
applying a ground potential and a preset positive voltage to first and second ones of two electrically conductive regions associated with a selected memory cell, and a preset positive voltage to a gate electrode associated with the selected memory cell; and
applying, when writing in the memory cell, a positive voltage of the same level as that of the second electrically conductive region, to an electrically conductive region neighboring to the second electrically conductive region supplied with the positive voltage, and to an electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region among the electrically conductive regions neighboring to a third by being electrically conductive region forming a set of the sub bit lines by paired to the second electrically conductive region; and
applying a voltage between the positive voltage supplied with the positive voltage and the ground voltage to at least one of the first electrically conductive region and an electrically conductive region arranged between a fourth electrically conductive region forming a set of sub bit lines by being paired with the first electrically conductive region and the electrically conductive region to which is applied the positive voltage.
30. A method of controlling read operation in a semiconductor storage device in which a set of sub bit lines are formed by interconnecting a pair of electrically conductive regions extending parallel to each other on a substrate surface,
a plurality of selection transistors for connecting a set of sub bit lines to an associated main bit line are arranged on both longitudinal end sides of a memory cell array; and in which
a plurality of sets of sub bit lines respectively connected to the selection transistors arranged on one and on the other longitudinal end sides of the memory cell array are arranged in an interchanged fashion; the method comprising the steps of:
applying a ground potential and a preset positive voltage respectively to first and second ones of two neighboring electrically conductive regions associated with a selected memory cell, and a preset positive voltage to a gate electrode associated with the selected memory cell; and
applying, when reading out from the memory cell, a positive voltage of the same level applied to the second electrically conductive region to a third electrically conductive region neighboring to the second electrically conductive region to which the positive voltage is applied, the third electrically conductive region lying on the opposite side to the first electrically conductive region.
31. A method of controlling read operation in a semiconductor storage device in which a set of sub bit lines are formed by interconnecting two paired electrically conductive regions extending parallel to each other on a substrate surface,
a plurality of selection transistors for connecting a set of sub bit lines to an associated main bit line are arranged on both longitudinal end sides of a memory cell array; and in which
a plurality of sets of sub bit lines respectively connected to the selection transistors arranged on one and on the other longitudinal end sides of the memory cell array are arranged in an interchanged fashion; the method comprising the steps of:
applying a ground potential and a preset positive voltage respectively to first and second ones of two neighboring electrically conductive regions associated with a selected memory cell, a preset positive voltage to the second electrically conductive region and a preset positive voltage to a gate electrode associated with the selected memory cell, and for applying, when reading out from the memory cell, a positive voltage of the same level as that of the second electrically conductive region, to an electrically conductive region neighboring to the second electrically conductive region supplied with the positive voltage, and to an electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region, the electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region being from the electrically conductive regions neighboring to a third by being electrically conductive region forming a set of the sub bit lines by paired to the second electrically conductive region; and
applying a ground potential to at least one of the first electrically conductive region and an electrically conductive region arranged between a fourth electrically conductive region forming a set of sub bit lines by being paired with the first electrically conductive region and the electrically conductive region to which is applied the positive voltage.
32. The method as defined in claim 28, wherein
in a region between the sub bit lines of the set, there are arranged each one of two sets of sub bit lines, connected via selection transistors to two main bit lines lying on both sides of the main bit line to which the set of the sub bit lines are connected via selection transistor and each one of two sets of the sub bit lines, respectively connected to two main bit lines neighboring to each other via a selection transistor on the longitudinally opposite side of the memory cell array, totaling at four sub bit lines.
33. The method as defined in claim 30, wherein
in a region between the sub bit lines of the set, there are arranged each one of two sets of sub bit lines, connected via selection transistors to two main bit lines lying on both sides of the main bit line to which the set of the sub bit lines are connected via selection transistor and each one of two sets of the sub bit lines, respectively connected to two main bit lines neighboring to each other via a selection transistor on the longitudinally opposite side of the memory cell array, totaling at four sub bit lines.
34. A semiconductor memory device comprising:
a plurality of electrically conductive regions extending parallel to one another on a substrate surface forming a memory cell region; wherein
two of the electrically conductive regions are connected as a pair to form a set of sub bit lines; the one set of the sub bit lines being connected to a main bit line via a selection transistor;
a plurality of the selection transistors are arranged opposing to one another on both sides of the memory cell array;
the memory cell array is formed by a plurality of (M) sets, each set being composed of a plurality of (N) word lines as a unit;
M sets of paired electrically conductive regions, forming said one set of sub bit lines, are arranged along two lines, corresponding to the M sets forming the memory cell array;
for each of the M sets of paired electrically conductive regions, one end of one of the paired electrically conductive regions and another end of the other of the paired electrically conductive regions are interconnected via a wiring on an upper layer on the substrate, the another end being longitudinally opposite to the one end; and wherein
the paired electrically conductive regions of each of the M sets are connected common to one of the selection transistors via the wiring on an upper layer on the substrate.
35. The semiconductor memory devices defined in claim 34, wherein
the end of one of the paired electrically conductive regions of one the set is on the same line as the one of the paired electrically conductive regions and is isolated from the end of one of the paired electrically conductive regions of the other set neighboring to one the set;
the end of the other of the paired electrically conductive regions of one the set is on the same line as the other of the paired electrically conductive regions and is connected to the end of the other of the paired electrically conductive regions of the other set neighboring to the one set via electrically conductive regions forming a junction area; and wherein
the wiring is connected via a contact to a junction of the ends of the other of the paired electrically conductive regions of one the set and the other set neighboring thereto, and is connected via a contact to the ends longitudinally opposite to the isolated ends of the paired electrically conductive regions of one the set and the other set neighboring thereto.
36. The semiconductor memory device as defined in claim 34, wherein
the M is an even number not less than four;
the end of a first electrically conductive region of paired electrically conductive regions of a jth set and the end of a first electrically conductive region of the paired electrically conductive regions of a (j1)th set, j being an integer not less than 1 and not more than M2, are isolated from each other, the ends of the second electrically conductive regions are connected to each other, the end of the first electrically conductive region of the paired electrically conductive regions of a (j1)th set and the end of the first electrically conductive region of the paired electrically conductive regions of a (j2)th set are connected to each other and the end of the second electrically conductive region of the pair of electrically conductive regions of the (j1)th set and the end of the second electrically conductive region of the pair of electrically conductive regions of the (j2)th set are isolated from each other; and wherein
the line of the paired electrically conductive regions of the M sets connected common to one selection transistor in which the ends are isolated from each other and the line of the paired electrically conductive regions of the M sets connected common to one selection transistor in which the ends are connected to each other are alternately interchanged from one set to another.
37. The semiconductor memory devices defined in claim 34, wherein
the end of one of the paired electrically conductive regions of the one set is connected to the end of one of the paired electrically conductive regions of the other set lying on the same line as the one of the paired electrically conductive regions and neighboring to the one set; and wherein
the wiring is connected via a contact to a junction of the ends of the first electrically conductive regions of the one and the other neighboring sets of the paired electrically conductive regions, and is connected via a contact to the ends longitudinally opposite to the junction of the second electrically conductive regions of the one and the other neighboring sets of the paired electrically conductive regions.
38. The semiconductor memory device as defined in claim 35, wherein
the M is an even number not less than four and wherein
as for M sets of paired electrically conductive regions, connected common to one selection transistor, the wiring is connected to a junction area between a first line of the electrically conductive regions of the jth set, j being an integer not less than 1 and not more than M1, and a first line of the electrically conductive regions of the (j1)th set, at a longitudinally opposite end or the junction, via a contact, and wherein the wiring is connected to a junction between the first line of the electrically conductive regions of the (j1)th set, and the electrically conductive regions of the jth set, at a longitudinally opposite junction or end, via a contact, the wiring being connected via a contact to a junction between the ends of the second lines of the jth set and the ends of the electrically conductive regions of the (j1)th set.
39. The semiconductor memory device as defined in claim 34, wherein there arranged between two of the paired electrically conductive regions, two electrically conductive regions associated with each one of two sets of the sub bit lines, connected via selection transistors to two main bit lines lying on both sides of the main bit line to which the set of the sub bit lines are connected via selection transistor and two electrically conductive regions associated with each one of two sets of the sub bit lines, respectively connected to two neighboring main bit lines via a selection transistor lying on the opposite side of the memory cell array, totaling at four electrically conductive regions.
40. The semiconductor memory device as defined in claim 34, further comprising means for applying a ground potential to a first one of two neighboring electrically conductive regions associated with a selected memory cell, a preset positive voltage to a gate electrode associated with the selected memory cell and for applying, when writing in the memory cell, a voltage intermediate the positive voltage applied to the second electrically conductive region and the ground potential to a third electrically conductive region neighboring to the second electrically conductive region to which the positive voltage is applied, the third electrically conductive region lying on the opposite side to the second electrically conductive region to which the positive voltage is applied.
41. The semiconductor memory device as defined in claim 34, further comprising means for applying a ground potential to a first one of two neighboring electrically conductive regions associated with a selected memory cell, a preset positive voltage to a gate electrode associated with the selected memory cell and for applying, when writing in the memory cell, a positive voltage of the same level as that of the second electrically conductive region, to an electrically conductive region neighboring to the second electrically conductive region supplied with the positive voltage, and to an electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region, the electrically conductive region forming sub bit lines having an electrically conductive region other than the first electrically conductive region being from the electrically conductive regions neighboring to a third by being electrically conductive region forming a set of the sub bit lines by paired to the second electrically conductive region; and
for applying a ground voltage to at least one of the first electrically conductive region and an electrically conductive region arranged between a fourth electrically conductive region forming a set of sub bit lines by being paired with the first electrically conductive region and the electrically conductive region to which is applied the positive voltage.
42. The semiconductor memory device as defined in 34, further comprising means for applying a ground potential to a first one of two neighboring electrically conductive regions associated with a selected memory cell, a preset positive voltage to a second electrically conductive region and a preset positive voltage to a gate electrode associated with the selected memory cell and for applying, when reading from the memory cell, a voltage of the same level as the second electrically conductive region to a third electrically conductive region neighboring to the second electrically conductive region to which the positive voltage is applied, the third electrically conductive region lying on the opposite side to the first electrically conductive region.
43. The semiconductor memory device as defined in claim 34, further comprising means for applying a ground potential to a first one of two neighboring electrically conductive regions associated with a selected memory cell, a preset positive voltage to a second electrically conductive region and a preset positive voltage to a gate electrode associated with the selected memory cell and for applying, when reading out from the memory cell, a voltage of the same level as the second electrically conductive region to a third electrically conductive region neighboring to the second electrically conductive region to which the positive voltage is applied, the third electrically conductive region lying on the opposite side to the first electrically conductive region; and
for applying a ground voltage to at least one of the first electrically conductive region and an electrically conductive region arranged between a fourth electrically conductive region forming a set of sub bit lines by being paired with the first electrically conductive region and the electrically conductive region to which is applied the positive voltage.
44. The semiconductor memory device as defined in claim 34, operating as a programmable non-volatile memory, wherein a memory cell formed in two neighboring electrically conductive regions includes, intermediate the substrate surface and the gate electrode, an ONO film composed of a first oxide film, a nitride film and a second oxide film.
45. A semiconductor device comprising:
a memory cell array region including a plurality of memory cells arranged in an array format on a substrate;
a plurality of main bit lines;
a plurality of selection transistors, each arranged between the main bit line and an associated set of sub bit lines, controlled on and off by a selection control signal;
a plural number of electrically conductive regions extending parallel to one another on the memory cell array region on the substrate surface,
said electrically conductive regions paired two by two to form a plural sets of sub bit lines, each set of sub bit lines connected via an associated one of the selection transistors to the main bit line,
one end of one of paired electrically conductive regions forming one set of sub bit lines, diagonally interconnected to another end of the other of the paired electrically conductive regions via a wiring provided on an upper layer on the substrate, said another end being longitudinally opposite to said one end; and
a plurality of gate electrodes extending parallel to one another via an insulating film on the substrate surface in the memory cell array region in a direction perpendicular to a direction along which the electrically conductive regions are extended, each gate electrode composing a word line, the memory cell being formed at an intersection area of the gate electrode and neighboring two electrically conductive regions.
46. The semiconductor device as defined in claim 45, wherein a plurality of said selection transistors are arranged on both ends of said memory cell array, in an opposing relation to one another; and
a plural number of sets of said sub bit lines respectively connected to plural selection transistors on one end of said memory cell array and a plural number of sets of said sub bit lines respectively connected to plural selection transistors on the opposite end of said memory cell array are arranged alternately.
47. The semiconductor device as defined in claim 45, wherein there are provided a plurality of stages of paired electrically conductive regions forming one set of said sub bit lines from a selection transistor on one side of the memory cell array to a selection transistor on the opposite side of the memory cell array,
the paired electrically conductive regions being formed by interconnecting one side end of one electrically conductive region to another end of the other electrically conductive region, by a wiring provided on an upper layer on the substrate, said another end being longitudinally opposite to the one end.
48. The semiconductor device as defined in claim 45, wherein the selection transistors are isolated from one another by a field oxide film.