1. A method, comprising:
retaining first information, second information and third information on one or more non-transitory computer readable medium regarding each traffic aggregate to be forwarded by nodes in a packet network, the traffic aggregate including a first type of traffic aggregate, a second type of traffic aggregate and a third type of traffic aggregate,
a. the first information identifying the first type of traffic aggregate for which the first type of traffic aggregate requires that all packets within the first type of traffic aggregate be forwarded in the order received;
b. the second information identifying the second type of traffic aggregate for which ordering is not required, but including one or more contained traffic aggregate to be forwarded in an order received; and
c. the third information identifying the third type of traffic aggregate for which ordering is not required and being absent of one or more contained traffic aggregate to be forwarded in the order received.
2. The method of claim 1, wherein the second information includes information regarding a smallest number of encapsulation layers at which one or more of the contained traffic aggregate of the second type of traffic aggregates is carried.
3. The method of claim 1, wherein the second type of traffic aggregate is encapsulated with multiprotocol label switching, and the contained traffic aggregate to be forwarded in the order received is encapsulated with multiprotocol label switching\u2014transport profile.
4. The method of claim 1, wherein in the second type of traffic aggregate, the contained traffic aggregate to be forwarded in the order received is encapsulated with multiprotocol label switching\u2014transport profile.
5. A method, comprising:
at a first node in a packet network, forwarding packets over a multipath to a second node in the packet network, where the multipath includes at least one of multiple links and lower layer paths connecting the first node to the second node, wherein:
a. For each packet that belongs to a first type of traffic aggregate requiring that all packets be forwarded in the order received, forward the packet over the same component link or component lower layer path as all other packets belonging to the same traffic aggregate;
b. for packets that belong to a second type of traffic aggregate for which ordering is not required, but includes one or more contained traffic aggregate to be forwarded in the order received and with the one or more contained traffic aggregates being identified by one or more encapsulation layers, forward the packets over a set of at least one of component links and component lower layer paths within the multipath by limiting the use of information at or below a highest encapsulating layer; and
c. for each packet that belongs to a third type of traffic aggregate for which ordering is not required, and being absent of one or more contained traffic aggregate, forward each packet such that traffic is distributed over a set of at least one component link and lower layer path of the multipath and such that packets for a microflow are forwarded in the order received.
6. The method of claim 5, wherein in step b. the one or more encapsulation layers are within a label stack, and wherein the second type of traffic aggregate makes use of multiprotocol label switching.
7. The method of claim 5, wherein in step b., the contained traffic aggregate within the second type of traffic aggregate makes use of multiprotocol label switching\u2014transport profile.
8. The method of claim 5, wherein in step b. the packets are forwarded with the aid of a hash algorithm utilizing only a portion of the encapsulation layers within the label stack.
9. A set of at least one or more digital circuit or processing device adapted to:
a. receive a packet having a plurality of encapsulating layers;
b. determine whether the packet is part of a first type of traffic aggregate for which ordering is not required, but contains a second traffic aggregate to be forwarded in an order received; and
c. responsive to step b., forward the packet over a component link or component lower layer path within a multipath by limiting the multipath traffic distribution to use only information at or below a highest encapsulating layer within the packet containing the second traffic aggregate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A method of forming silver-rich silver selenide in a resistance variable material cell, comprising:
forming a layer of silver selenide on a substrate assembly;
selectively oxidizing the layer of silver selenide with oxygen; and
annealing the layer of implanted silver selenide such that the implanted silver selenide is essentially free of selenium oxide.
2. The method as defined in claim 1, wherein the selectively oxidizing comprises ion implantation.
3. The method as defined in claim 2, wherein implanting further comprises implanting at least 2% of oxygen is implanted.
4. The method as defined in claim 2, wherein oxygen is implanted to a depth between about 0 and about 500 angstroms ().
5. The method as defined in claim 2, wherein oxygen is implanted to a depth between about 50 and about 100 angstroms ().
6. The method as defined in claim 1, wherein annealing further comprises maintaining a temperature between about 50 degrees centigrade (C) to 130 degrees C. for about 30 minutes to 3 hours.
7. The method as defined in claim 1, wherein annealing further comprises maintaining a sufficient temperature so that a vapor pressure of selenium oxide is greater than a pressure maintained in an annealing chamber.
8. The method as defined in claim 1, further comprising repeating implanting and annealing a predetermined number of times to increase an amount of silver in the silver-rich silver selenide (Ag2xSe).
9. The method as defined in claim 1, further comprising:
applying a pattern mask over the layer of silver selenide prior to implanting the layer of silver selenide with oxygen; and
removing the pattern mask prior to annealing.
10. A method of forming memory cells in a programmable conductor random access memory (PCRAM) comprising:
(a) forming a plurality of electrodes;
(b) forming a layer of chalcogenide glass;
(c) forming a layer of silver selenide adjacent to the layer of chalcogenide glass;
(d) forming a mask pattern over the layer of silver selenide;
(e) implanting unmasked portions of the layer of silver selenide with oxygen;
(f) removing the mask pattern;
(g) annealing the layer of implanted silver selenide such that the layer is essentially free of selenium oxide thereby forming silver-rich regions of silver selenide; and
(h) patterning to define cells, where patterning selectively removes unenriched regions of silver selenide.
11. The method as defined in claim 10, further comprising repeating (d) to (g) to further increase an amount of silver in the silver-rich regions of silver selenide.
12. The process as defined in claim 10, further comprising forming electrodes in a cross-point configuration.
13. The process as defined in claim 10, wherein the layer of chalcogenide glass is formed before forming the layer of silver selenide.
14. The process as defined in claim 10, wherein the layer of chalcogenide glass is formed after forming, implanting, annealing, and patterning the layer of silver selenide.
15. A process to increase a ratio of silver to a chalcogenide material in a composition of silver chalcogenide, the process comprising:
providing silver chalcogenide; and
removing a selected amount of chalcogenide from the silver chalcogenide.
16. The process as defined in claim 15, wherein removing the selected amount of chalcogenide further comprises:
implanting oxygen to the silver chalcogenide; and
annealing the oxygen-implanted silver chalcogenide.
17. The process as defined in claim 16, further comprising repeating implanting and annealing for a predetermined number of times to further increase the ratio of silver to chalcogenide.
18. The process as defined in claim 16, wherein the silver chalcogenide is selected from the group consisting of silver selenide, silver telluride, and silver sulfide.
19. The process as defined in claim 16, wherein the silver chalcogenide is silver selenide.