1. A system for generating parametric stereo data from phase modulated stereo data comprising:
a phase difference system receiving left channel audio data and right channel audio data and generating phase difference data based on a phase difference between left channel frequency domain data generated from the left channel audio data and right channel frequency domain data generated from the right channel audio data, wherein the left channel frequency domain data comprises left channel amplitude data and left channel phase data, and the right channel frequency domain data comprises right channel amplitude data and right channel phase data;
a phase difference weighting system receiving the phase difference data and generating weighting data to adjust the left channel amplitude data and the right channel amplitude data based on the phase difference data; and
a magnitude modification system adjusting the left channel amplitude data and the right channel amplitude data using the weighting data and eliminating the left channel phase data from the left channel frequency domain data and the right channel phase data from the right channel frequency domain data.
2. The system of claim 1 wherein the phase difference weighting system receives a plurality of frames of left channel frequency domain data and right channel frequency domain data.
3. The system of claim 2 further comprising a buffer system storing the phase difference data between the left channel frequency domain data and the right channel frequency domain data for two or more corresponding frames of left channel frequency domain data and right channel frequency domain data.
4. The system of claim 1 further comprising a frequency domain to time domain conversion system receiving the left channel frequency domain data with the left channel phase data eliminated and the right channel frequency domain data with the right channel phase data eliminated from the magnitude modification system and converting the left channel frequency domain data and the right channel frequency domain data into amplitude adjusted left channel time domain data and amplitude adjusted right channel time domain data.
5. A method for generating parametric audio data from phase modulated audio data comprising:
converting a first channel audio data from a time domain signal to first channel frequency domain data, wherein the first channel frequency domain data comprises first channel amplitude data and first channel phase data;
converting a second channel audio data from a time domain signal to second channel frequency domain data wherein the second channel frequency domain data comprises second channel amplitude data and second channel phase data;
determining a phase difference between the first channel frequency domain data and the second channel frequency domain data;
determining weighting data to apply to the first channel amplitude data and the second channel amplitude data based on the phase difference between the first channel frequency domain data and the second channel frequency domain data; and
adjusting the first channel amplitude data with the weighting data;
adjusting the second channel amplitude data with the weighting data;
eliminating the first channel phase data from the first channel frequency domain data; and
eliminating the second channel phase data from the second channel frequency domain data.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A hybrid photonics device, comprising:
a silicon portion having one or more features formed therein;
a non-silicon portion comprising one or more photonics devices proximate to the one or more features of the silicon portion, the non-silicon portion comprising a III-V material and a multiple quantum well region; and
a bonding layer coupling the silicon portion with the non-silicon portion, the bonding layer comprising a thickness of about 100 nanometers, the non-silicon portion being bonded to the silicon portion via the bonding layer prior to patterning of the one or more photonics devices;
wherein an optical mode of the silicon portion may at least partially overlap with a photonics device in the non-silicon portion to obtain gain from the photonics device in the non-silicon portion, and wherein the non-silicon portion comprising about a 5% multiple quantum well confinement factor.
2. A hybrid photonics device as claimed in claim 1, wherein the bonding layer comprises a liquid adhesive, or a cured liquid adhesive.
3. A hybrid photonics device as claimed in claim 1, wherein the bonding layer comprises spin on glass or DVS-BCB, or combinations thereof.
4. A hybrid photonics device as claimed in claim 1, wherein the silicon portion comprises a silicon-on-insulator wafer.
5. A hybrid photonics device as claimed in claim 1, wherein one or more of the features of the silicon portion comprises a silicon waveguide to couple with one or more photonics devices of the non-silicon portion.
6. A hybrid photonics device as claimed in claim 1, wherein one or more of the photonics devices comprises a laser, a photodetectors, an amplifier, or a wavelength converter, or combinations thereof.
7. A method to form a hybrid photonics device, comprising:
applying a liquid adhesive to a silicon wafer to form a bonding layer on the silicon wafer, the silicon wafer having one or more features formed therein, and the bonding layer comprising a thickness of about 100 nanometers;
bonding a non-silicon chip to the silicon wafer via the bonding layer, the non-silicon chip being disposed proximate to the one or more features of the silicon wafer, the non-silicon portion comprising a III-V material and a multiple quantum well region; and
fabricating one or more photonics devices in the silicon chip after said bonding to couple one or more photonics devices with one or more features of the silicon wafer, to form a hybrid photonics device, wherein an optical mode of the silicon wafer may at least partially overlap with a photonics device in the non-silicon chip to obtain gain from the photonics device in the non-silicon chip, and wherein the non-silicon portion comprises about a 5% multiple quantum well confinement factor.
8. A method to form a hybrid photonics device as claimed in claim 7, further comprising finishing processing of the hybrid photonics device after said fabricating.
9. A method to form a hybrid photonics device as claimed in claim 7, further comprising curing the liquid adhesive after said bonding.
10. A method to form a hybrid photonics device as claimed in claim 7, said applying a liquid adhesive comprising spin coating the liquid adhesive on the silicon wafer.
11. A method to form a hybrid photonics device as claimed in claim 7, said bonding being performed without involving direct oxide molecular bonding.
12. A method as claimed in claim 7, said one or more features formed in the silicon wafer comprising a silicon waveguide for one or more of the photonics devices.
13. A photonics system, comprising:
an optical transmitter comprising one or more hybrid photonics devices, or an optical receiver comprising one or more hybrid photonics devices, or combinations of a transmitter and a receiver;
wherein the one or more hybrid photonics devices of the optical transmitter or the optical receiver, or combinations thereof, comprises:
a silicon portion having one or more features formed therein;
a non-silicon portion comprising one or more photonics devices proximate to the one or more features of the silicon portion, the non-silicon portion comprising a III-V material and a multiple quantum well region; and
a bonding layer coupling the silicon portion with the non-silicon portion, the non-silicon portion being bonded to the silicon portion via the bonding layer prior to patterning of the one or more photonics devices, the bonding layer comprising a thickness of about 100 nanometers;
wherein an optical mode of the silicon portion may at least partially overlap with a photonics device in the non-silicon portion to obtain gain from the photonics device in the non-silicon portion, and wherein the non-silicon portion comprising about a 5% multiple quantum well confinement factor.
14. A photonics system as claimed in claim 13, wherein the bonding layer comprises a liquid adhesive, or a cured liquid adhesive, the liquid adhesive comprising spin on glass or DVS-BCB, or combinations thereof.
15. A photonics system as claimed in claim 13, wherein the silicon portion comprises a silicon-on-insulator wafer.
16. A photonics system as claimed in claim 13, wherein one or more of the photonics devices comprises a laser, a photodetectors, an amplifier, or a wavelength converter, or combinations thereof.
17. A photonics system as claimed in claim 13, further comprising:
a multiplexer to combine outputs of one or more of the hybrid photonics devices of the optical transmitter into a combined optical signal, or a demultiplexer to provide one or more signals from a combined optical signal to a corresponding one or more of the hybrid photonics devices of the optical receiver, or a combination of a multiplexer and a demultiplexer.